A voltage-programmed AMOLED pixel circuit to compensate the electrical characteristics variations of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) is proposed. This circuit features a voltage charging process of the storage capacitor (i.e. C1) in the compensation process, which is strongly dependent on the threshold voltage and mobility of the driving TFT, and a charge sharing process between C1 and the gate electrode of the driving transistor. The proposed circuit requires relative simple external driving circuits as only scanning signals of two adjacent gate lines (i.e. SCAN[n] and SCAN[n+1]) and one light emitting signal (i.e. EM[n]) are used. In addition, the voltage drop of the power line can also be compensated by this new circuit. The simulation results demonstrate that the relative current error rates are less than 7.4% and 6% for Vth variations of ±0.3V and mobility variations of ±10%, respectively.
{"title":"New AMOLED Pixel Circuit to Compensate Characteristics Variations of LTPS TFTs and Voltage Drop","authors":"Jixiang Wu, Shuiping Yi, Congwei Liao, Xinxin Huo, Ying Wang, Shengdong Zhang","doi":"10.23919/AM-FPD.2018.8437404","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437404","url":null,"abstract":"A voltage-programmed AMOLED pixel circuit to compensate the electrical characteristics variations of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) is proposed. This circuit features a voltage charging process of the storage capacitor (i.e. C1) in the compensation process, which is strongly dependent on the threshold voltage and mobility of the driving TFT, and a charge sharing process between C1 and the gate electrode of the driving transistor. The proposed circuit requires relative simple external driving circuits as only scanning signals of two adjacent gate lines (i.e. SCAN[n] and SCAN[n+1]) and one light emitting signal (i.e. EM[n]) are used. In addition, the voltage drop of the power line can also be compensated by this new circuit. The simulation results demonstrate that the relative current error rates are less than 7.4% and 6% for Vth variations of ±0.3V and mobility variations of ±10%, respectively.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"76 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133793548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437371
N. Fruehauf, Nesrine Kammoun, Sheik Abdullah Al Nuayer, Christiane J. Reinert-Weiss, P. Schalberger
This presentation will give an overview about recent developments in the area of large area microelectronics. Besides flexible active matrix displays, it will address recent trends in metal oxide thin film transistors as well as the development of various innovative non-display applications.
{"title":"Large Area Microelectronics - Technology and Trends","authors":"N. Fruehauf, Nesrine Kammoun, Sheik Abdullah Al Nuayer, Christiane J. Reinert-Weiss, P. Schalberger","doi":"10.23919/AM-FPD.2018.8437371","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437371","url":null,"abstract":"This presentation will give an overview about recent developments in the area of large area microelectronics. Besides flexible active matrix displays, it will address recent trends in metal oxide thin film transistors as well as the development of various innovative non-display applications.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132814493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437415
Taegyun Kim, Bongho Jang, Sojeong Lee, Won-Yong Lee, Jaewon Jang
We have shown that the magnesium doping effect causes indium oxide with a high negative threshold voltage, close to zero bias, to operate in the enhancement mode, with minimal mobility degradation. At 0.2wt%, the MIO film had a mobility of 11.96 cm2/Vs-s and a threshold voltage of-4 V, having shifted from −18 V.
{"title":"Sol-gel processed Mg-doped In2O3 thin-film transistors","authors":"Taegyun Kim, Bongho Jang, Sojeong Lee, Won-Yong Lee, Jaewon Jang","doi":"10.23919/AM-FPD.2018.8437415","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437415","url":null,"abstract":"We have shown that the magnesium doping effect causes indium oxide with a high negative threshold voltage, close to zero bias, to operate in the enhancement mode, with minimal mobility degradation. At 0.2wt%, the MIO film had a mobility of 11.96 cm2/Vs-s and a threshold voltage of-4 V, having shifted from −18 V.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115428362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437441
Ming-Kun Lee, D. Dubey, Yu-Chih Lo, J. Jou
Blue-hazard free, low color temperature (CT) lighting sources are crucial for their low suppression of melatonin secretion and creating a warm, comfortable atmosphere, while high-efficiency is required to obtain energy-saving devices. Solution processing enables organic devices to be fabricated cost-effectively with a large area-size via continuous roll-to-roll manufacturing. We demonstrate here a high-efficiency, low CT organic light emitting diode with a power-efficiency of 30.9 lm/W, a current efficiency of 36.1 cd/A and an external quantum efficiency of 12.9% at 100 cd/m2. Futhermore, the resultant device shows a CT as low as 2,026 Kat 100 cd/nr’, i.e. much lower than that of incandescent bulbs (~2500 K) and comparable to candles (~2000 K). The high efficiency may be attributed to the use of electroluminescence efficient materials, effective host -to-guest energy transfer and introduction of p-type doped hole transport layer.
{"title":"Solution processed low-color temperature OLED with high efficiency","authors":"Ming-Kun Lee, D. Dubey, Yu-Chih Lo, J. Jou","doi":"10.23919/AM-FPD.2018.8437441","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437441","url":null,"abstract":"Blue-hazard free, low color temperature (CT) lighting sources are crucial for their low suppression of melatonin secretion and creating a warm, comfortable atmosphere, while high-efficiency is required to obtain energy-saving devices. Solution processing enables organic devices to be fabricated cost-effectively with a large area-size via continuous roll-to-roll manufacturing. We demonstrate here a high-efficiency, low CT organic light emitting diode with a power-efficiency of 30.9 lm/W, a current efficiency of 36.1 cd/A and an external quantum efficiency of 12.9% at 100 cd/m2. Futhermore, the resultant device shows a CT as low as 2,026 Kat 100 cd/nr’, i.e. much lower than that of incandescent bulbs (~2500 K) and comparable to candles (~2000 K). The high efficiency may be attributed to the use of electroluminescence efficient materials, effective host -to-guest energy transfer and introduction of p-type doped hole transport layer.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114730049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437378
Seong-Yong Kwon, Howon Yoon, YunSung Jang, SeungMin Shin, Seungjun Yi, M. Hong
We have etched 700 nm thick silicon nitride (SiNx) on 370×235 mm2 substrate using a linear electron cyclotron resonance (ECR) plasma source with reciprocating substrate motion. A mixture of NF3 and Ar gases was used as etch gas. The etching of SiN x was performed with and without reciprocating substrate motion and compared to each other. In the etching without reciprocating substrate motion, the etch rate was measured in 45 points, showed 17.5% uniformity and the average etch rate was 92 nm/min. For the etching with reciprocating substrate motion, 4% uniformity of etch rate and 72 nm/min etch rate were obtained in the same measuring points. Moreover, there were no stains left on 370×235 mm2 SiNx glass after the etching with reciprocating substrate motion. In this paper, the linear ECR plasma source with reciprocating substrate motion is proved to be suitable for large-sized substrates and is profitable due to high yield and low-cost manufacturing.
{"title":"Large-Scale Etching of Silicon Nitride Using a Linear ECR Plasma Source with Reciprocating Substrate Motion","authors":"Seong-Yong Kwon, Howon Yoon, YunSung Jang, SeungMin Shin, Seungjun Yi, M. Hong","doi":"10.23919/AM-FPD.2018.8437378","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437378","url":null,"abstract":"We have etched 700 nm thick silicon nitride (SiNx) on 370×235 mm2 substrate using a linear electron cyclotron resonance (ECR) plasma source with reciprocating substrate motion. A mixture of NF3 and Ar gases was used as etch gas. The etching of SiN x was performed with and without reciprocating substrate motion and compared to each other. In the etching without reciprocating substrate motion, the etch rate was measured in 45 points, showed 17.5% uniformity and the average etch rate was 92 nm/min. For the etching with reciprocating substrate motion, 4% uniformity of etch rate and 72 nm/min etch rate were obtained in the same measuring points. Moreover, there were no stains left on 370×235 mm2 SiNx glass after the etching with reciprocating substrate motion. In this paper, the linear ECR plasma source with reciprocating substrate motion is proved to be suitable for large-sized substrates and is profitable due to high yield and low-cost manufacturing.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131568117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437358
M. Hasegawa
To overcome strong viewing angle dependency of TN-LCD, we introduced a quantum dot/rod color convertor. We fabricated quantum rod-based color conversion subpixels by ink jet printing and stacked on a twisted nematic liquid crystal panel to improve not only its viewing angle but also color gamut. The resulting color conversion layer produced a very wide viewing angle and the panel covers more than 80% of the BT.2020 standard color gamut.
{"title":"Optical characteristics of TN-LCD combined with inkjet printed quantum dot color pixel convertor","authors":"M. Hasegawa","doi":"10.23919/AM-FPD.2018.8437358","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437358","url":null,"abstract":"To overcome strong viewing angle dependency of TN-LCD, we introduced a quantum dot/rod color convertor. We fabricated quantum rod-based color conversion subpixels by ink jet printing and stacked on a twisted nematic liquid crystal panel to improve not only its viewing angle but also color gamut. The resulting color conversion layer produced a very wide viewing angle and the panel covers more than 80% of the BT.2020 standard color gamut.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"23 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131793082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437384
Donggi Shin, K. Jang, Cam Phu Thi Nguyen, Heejun Park, Jeongsoo Kim, Youngkuk Kim, J. Yi
We report the effects of negatively charged aluminium-oxynitride (AlON) gate dielectrics on the electrical properties of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). The a-ITZO TFT using the AlON gate dielectric has high field-effect mobility (μFE) of 116.9 cm2N.s, high on/off current ratio of ~108 and low sub-threshold swing of 0.11. Our high a-ITZO TFTs with $mu_{mathrm{FE}}$ of 116.9 cm2/V.s, obtained through control of the fixed charges with nitrogen annealing was suitable for application of next-generation displays including high-frame-rate and ultra-high resolution displays.
{"title":"High Field-Effect Mobility Amorphous Indium-Tin-Zinc-Oxide Thin-Film Transistors Using Negatively Charged Aluminium-Oxynitride Gate Dielectrics","authors":"Donggi Shin, K. Jang, Cam Phu Thi Nguyen, Heejun Park, Jeongsoo Kim, Youngkuk Kim, J. Yi","doi":"10.23919/AM-FPD.2018.8437384","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437384","url":null,"abstract":"We report the effects of negatively charged aluminium-oxynitride (AlON) gate dielectrics on the electrical properties of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). The a-ITZO TFT using the AlON gate dielectric has high field-effect mobility (μ<inf>FE</inf>) of 116.9 cm<sup>2</sup>N.s, high on/off current ratio of ~10<sup>8</sup> and low sub-threshold swing of 0.11. Our high a-ITZO TFTs with <tex>$mu_{mathrm{FE}}$</tex> of 116.9 cm<sup>2</sup>/V<sup>.</sup>s, obtained through control of the fixed charges with nitrogen annealing was suitable for application of next-generation displays including high-frame-rate and ultra-high resolution displays.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132483832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437376
Hyeong-Rae Kim, Ji-Hee Yang, G. Kim, Sung‐Min Yoon
A flexible vertical-channel structure thin-film transistor (VTFT) was proposed and fabricated on poly(ethylene naphthalate) (PEN) substrate. All the layers composing the gate-stack including an In-Ga-Zn-O (IGZO) active channel were prepared by atomic-layer deposition except for source and drain electrodes. A polyimide was introduced as a spacer material and a dry etch process was designed to form the vertical sidewalls. The fabricated flexible IGZO VTFTs exhibited sound transfer characteristics showing the on/off ratio of 1.8×102. The threshold voltage instabilities were estimated to be +6.1 V/-4.5 V under the positive/negative bias stress tests, respectively. The device characteristics did not show any marked degradation even after the substrate delamination and even under the bending state at a curvature radius of 10 mm.
{"title":"Flexible Thin-Film Transistors with Vertical In-Ga-Zn-O Channel Using Atomic-Layer Deposition on Poly(Ethylene Naphthalate) Substrate","authors":"Hyeong-Rae Kim, Ji-Hee Yang, G. Kim, Sung‐Min Yoon","doi":"10.23919/AM-FPD.2018.8437376","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437376","url":null,"abstract":"A flexible vertical-channel structure thin-film transistor (VTFT) was proposed and fabricated on poly(ethylene naphthalate) (PEN) substrate. All the layers composing the gate-stack including an In-Ga-Zn-O (IGZO) active channel were prepared by atomic-layer deposition except for source and drain electrodes. A polyimide was introduced as a spacer material and a dry etch process was designed to form the vertical sidewalls. The fabricated flexible IGZO VTFTs exhibited sound transfer characteristics showing the on/off ratio of 1.8×102. The threshold voltage instabilities were estimated to be +6.1 V/-4.5 V under the positive/negative bias stress tests, respectively. The device characteristics did not show any marked degradation even after the substrate delamination and even under the bending state at a curvature radius of 10 mm.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126587502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437356
Taehwan Jun, Kota Aoyama, J. Bang, Junghwan Kim, H. Hosono
Over a decade, transparent amorphous oxide semiconductors (TAOSs) have well demonstrated the advantages of electronic devices based on transparent amorphous semiconductors (TASs). However, it has been rather difficult to obtain p-type TAS to date. Therefore, it would be attractive if the p-type TAS is realized. In this paper, we propose a material design concept of p-type TAS and an example, a-Cu-Sn- I. The proposed solution-processable p-type a-CuSnI thin films exhibits a large Hall mobility of 9 cm2V−1s−l, and a promising energy-level for conventional optoelectronics including OLEDs and solar cells.
十多年来，透明非晶氧化物半导体(TAOSs)已经很好地展示了基于透明非晶半导体(TASs)的电子器件的优势。然而，迄今为止获得p型TAS相当困难。因此，如果p型TAS能够实现，将是非常有吸引力的。在本文中，我们提出了一种p型TAS的材料设计概念，并以a- cu - sn - i为例，提出了一种可溶液加工的p型a- cusni薄膜，其霍尔迁移率高达9 cm2V−1s−l，并且在传统光电子产品(包括oled和太阳能电池)中具有很好的能量水平。
{"title":"Solution-Processable P-type Transparent Amorphous Semiconductor for Flexible Electronics","authors":"Taehwan Jun, Kota Aoyama, J. Bang, Junghwan Kim, H. Hosono","doi":"10.23919/AM-FPD.2018.8437356","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437356","url":null,"abstract":"Over a decade, transparent amorphous oxide semiconductors (TAOSs) have well demonstrated the advantages of electronic devices based on transparent amorphous semiconductors (TASs). However, it has been rather difficult to obtain p-type TAS to date. Therefore, it would be attractive if the p-type TAS is realized. In this paper, we propose a material design concept of p-type TAS and an example, a-Cu-Sn- I. The proposed solution-processable p-type a-CuSnI thin films exhibits a large Hall mobility of 9 cm2V−1s−l, and a promising energy-level for conventional optoelectronics including OLEDs and solar cells.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128181399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437436
Chien-Yie Tsay, Shih-Ting Chen, Man-Ting Fan
In this study, MgxZn1-xO (0≤ x ≤ 0.3) semiconductor thin films and metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors were deposited on alkali-free glass substrates (NEG OA-10) using a sol-gel spin-coating process. The effect of incorporating Mg into ZnO thin films on the structural, electrical, optical, and UV photoresponse properties were investigated and photoconductive UV detectors were realized using ZnO and MgZnO thin films. Experimental results showed that the as-prepared MgZnO thin films had a polycrystalline hexagonal wurtzite phase and exhibited high transparency (≥90.0%) in the visible region. The optical bandgap of MgZnO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of the thin films rose from 6.10×102 to 8.86×104 Ω-cm with increasing Mg content. In addition, We found that the MgZnO photodetectors exhibited better photocurrent generation than the pure ZnO photodetectors and the Mg0.1Zn0.9O device exhibited the highest Ion to Ioff ratio of 2×103.
{"title":"Performance of Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Sol-Gel Derived MgxZn1-xO Semiconductor Thin Films","authors":"Chien-Yie Tsay, Shih-Ting Chen, Man-Ting Fan","doi":"10.23919/AM-FPD.2018.8437436","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437436","url":null,"abstract":"In this study, Mg<inf>x</inf>Zn<inf>1-x</inf>O (0≤ x ≤ 0.3) semiconductor thin films and metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors were deposited on alkali-free glass substrates (NEG OA-10) using a sol-gel spin-coating process. The effect of incorporating Mg into ZnO thin films on the structural, electrical, optical, and UV photoresponse properties were investigated and photoconductive UV detectors were realized using ZnO and MgZnO thin films. Experimental results showed that the as-prepared MgZnO thin films had a polycrystalline hexagonal wurtzite phase and exhibited high transparency (≥90.0%) in the visible region. The optical bandgap of MgZnO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of the thin films rose from 6.10×10<sup>2</sup> to 8.86×10<sup>4</sup> Ω-cm with increasing Mg content. In addition, We found that the MgZnO photodetectors exhibited better photocurrent generation than the pure ZnO photodetectors and the Mg<inf>0.1</inf>Zn<inf>0.9</inf>O device exhibited the highest Ion to I<inf>off</inf> ratio of 2×10<sup>3</sup>.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"57 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126076561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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