Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437365
Won-Yong Lee, Bongho Jang, Sojeong Lee, Taegyun Kim, Jaewon Jang
We propose an effective process for the enhancement of electrical performance in solution-processed SnO2-based oxide thin-film transistors (TFTs) by adding a ZrO2layer on the active layer. The ZrO2layer was spin coated on the SnO2film with a single coating and double coating process under the same condition. The SnO2 TFTs with double-coated ZrO2 layers showed a saturation mobility of 51.2 cm2/Vs, which was more than four times higher than that of conventional SnO2 TFTs. Furthermore, the subthreshold slope reduced from 1.17 V /decade to 0.36 V /decade for SnO2 TFTs with double-coated ZrO2 layers. These results are attributed to the electron transfer based on the theory of electron donation from high-k dielectrics to oxide semiconductors.
我们提出了一种有效的方法，通过在有源层上添加zro2层来提高溶液处理sno2基氧化物薄膜晶体管(TFTs)的电性能。在相同的条件下，采用单涂层和双涂层两种工艺将zro2层自旋涂覆在sno2薄膜上。采用ZrO2双层涂层的SnO2 tft的饱和迁移率为51.2 cm2/Vs，是传统SnO2 tft的4倍以上。此外，对于双ZrO2涂层的SnO2 tft，亚阈值斜率从1.17 V /decade降低到0.36 V /decade。这些结果归因于基于高k介电体给电子理论的电子转移到氧化物半导体。
{"title":"High Performance Sol-gel Processed SnO2 thin film transistor with sol-gel processed ZrO2 layers","authors":"Won-Yong Lee, Bongho Jang, Sojeong Lee, Taegyun Kim, Jaewon Jang","doi":"10.23919/AM-FPD.2018.8437365","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437365","url":null,"abstract":"We propose an effective process for the enhancement of electrical performance in solution-processed SnO<inf>2</inf>-based oxide thin-film transistors (TFTs) by adding a ZrO<inf>2</inf>layer on the active layer. The ZrO<inf>2</inf>layer was spin coated on the SnO<inf>2</inf>film with a single coating and double coating process under the same condition. The SnO<inf>2</inf> TFTs with double-coated ZrO<inf>2</inf> layers showed a saturation mobility of 51.2 cm<sup>2</sup>/Vs, which was more than four times higher than that of conventional SnO<inf>2</inf> TFTs. Furthermore, the subthreshold slope reduced from 1.17 V /decade to 0.36 V /decade for SnO<inf>2</inf> TFTs with double-coated ZrO<inf>2</inf> layers. These results are attributed to the electron transfer based on the theory of electron donation from high-k dielectrics to oxide semiconductors.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131873191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/am-fpd.2018.8437328
Chung-Jen Ou
TiO2 is well recognized as the electrode for large display technology. Hydrogen generation can also be achieved by the TiO2 array. This report reveals the using of the liquid crystal device as illuminators to explore the optimal combination of the TiO2 sample and provide a as a performance exploring for the Hydrogen generating. Advantages and the drawbacks of the present proposal can inspire the diligence of the display technology for new energy exploration.
{"title":"Platform for TiO2 Electrodes based Hydrogen Production by Microdisplay","authors":"Chung-Jen Ou","doi":"10.23919/am-fpd.2018.8437328","DOIUrl":"https://doi.org/10.23919/am-fpd.2018.8437328","url":null,"abstract":"TiO2 is well recognized as the electrode for large display technology. Hydrogen generation can also be achieved by the TiO2 array. This report reveals the using of the liquid crystal device as illuminators to explore the optimal combination of the TiO2 sample and provide a as a performance exploring for the Hydrogen generating. Advantages and the drawbacks of the present proposal can inspire the diligence of the display technology for new energy exploration.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129858542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437445
N. Matsuki, T. Matsui, K. Michishio, B. O’Rourke, N. Oshima, A. Uedono
Recently, we have found that the microvoid size in a-Si:H, determined via positron annihilation lifetime spectroscopy (PALS), is systematically correlated with the optical constant, the peak value of ε2;ε2peak, obtained from spectroscopic ellipsometry. This indicates a possibility to establish a novel characterization method that allows the average size and density of microvoid to be estimated readily via spectroscopic ellipsometry. In this presentation, we demonstrate a new finding that the microvoid size and the ε2peak of a-Si:H films deposited under different conditions, even including the sort of apparatus, are on an identical curve if a-Si:H films are prepared without doping.
{"title":"Fast Optical Characterization of Microvoid Size in Hydrogenated Amorphous Silicon: Study on the Universal Applicability of the Correlation between the Microvoid Size and the Optical Constant","authors":"N. Matsuki, T. Matsui, K. Michishio, B. O’Rourke, N. Oshima, A. Uedono","doi":"10.23919/AM-FPD.2018.8437445","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437445","url":null,"abstract":"Recently, we have found that the microvoid size in a-Si:H, determined via positron annihilation lifetime spectroscopy (PALS), is systematically correlated with the optical constant, the peak value of ε2;ε2peak, obtained from spectroscopic ellipsometry. This indicates a possibility to establish a novel characterization method that allows the average size and density of microvoid to be estimated readily via spectroscopic ellipsometry. In this presentation, we demonstrate a new finding that the microvoid size and the ε2peak of a-Si:H films deposited under different conditions, even including the sort of apparatus, are on an identical curve if a-Si:H films are prepared without doping.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"Suppl 33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121263080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437434
D. Yamakawa, Yuki Shibayama, H. Yamane, Y. Nakashima, M. Kimura
Artificial neural networks are infomation processing models of human brains. Especially, hardware neural networks have functions such as robustness, parallel distributed processing, and low power consumption. We think hardware neural networks are superior to software neural networks. However, hardware neural networks need high integration. Therefore, we propose a neural network using a LSI and IGZO thin films. We used current value as the synaptic bond strength. It is found that current value of synapses using IGZO thin films gradually decreased as time gose by. The neural networks succeeded in letter recgnition.
{"title":"Cellular Neural Network using IGZO Thin Film as Synapses and LSI as Neurons","authors":"D. Yamakawa, Yuki Shibayama, H. Yamane, Y. Nakashima, M. Kimura","doi":"10.23919/AM-FPD.2018.8437434","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437434","url":null,"abstract":"Artificial neural networks are infomation processing models of human brains. Especially, hardware neural networks have functions such as robustness, parallel distributed processing, and low power consumption. We think hardware neural networks are superior to software neural networks. However, hardware neural networks need high integration. Therefore, we propose a neural network using a LSI and IGZO thin films. We used current value as the synaptic bond strength. It is found that current value of synapses using IGZO thin films gradually decreased as time gose by. The neural networks succeeded in letter recgnition.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128733335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437368
Bo-Shu Chen, Ming-Yang Deng, Wei-Sheng Liao, Chih-Lung Lin
This work proposes a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit with a bootstrapping structure to shorten the falling time of output waveforms. The driving capability of the proposed circuit is improved without increasing the aspect ratio of driving TFT owing to the enlarged gate voltages by bootstrapping structure. The falling time of output waveforms is reduced by 20% compared to that of conventional gate driver circuit.
{"title":"Design of Gate Driver Circuit Using a-Si:H Thin-Film Transistors with Bootstrapping Structure for High-Resolution Displays","authors":"Bo-Shu Chen, Ming-Yang Deng, Wei-Sheng Liao, Chih-Lung Lin","doi":"10.23919/AM-FPD.2018.8437368","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437368","url":null,"abstract":"This work proposes a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit with a bootstrapping structure to shorten the falling time of output waveforms. The driving capability of the proposed circuit is improved without increasing the aspect ratio of driving TFT owing to the enlarged gate voltages by bootstrapping structure. The falling time of output waveforms is reduced by 20% compared to that of conventional gate driver circuit.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128891386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437401
Mikio Araki, Hiroaki Taniguch, K. Tanaka
Mitsubishi Electric Co. Sanda Works has been designing and manufacturing displays and multimedia products for automobiles for nearly 30 years. Considering the recent trend of dramatic improvement of connected car in an automotive industry, display devices are becoming more essential factor in the car system to provide drivers with various kinds of information including the data critical for safety drive. Furthermore, according to the development of in-vehicle infotainment, comfortability in vehicle is focused more than ever before. According to these trends, Mitsubishi Electric would like to focus on environmental resistance and functionality (Legibility, Operability and Designablity) in pursuing our product development for the future vehicular display.
{"title":"The Vehicular Display","authors":"Mikio Araki, Hiroaki Taniguch, K. Tanaka","doi":"10.23919/AM-FPD.2018.8437401","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437401","url":null,"abstract":"Mitsubishi Electric Co. Sanda Works has been designing and manufacturing displays and multimedia products for automobiles for nearly 30 years. Considering the recent trend of dramatic improvement of connected car in an automotive industry, display devices are becoming more essential factor in the car system to provide drivers with various kinds of information including the data critical for safety drive. Furthermore, according to the development of in-vehicle infotainment, comfortability in vehicle is focused more than ever before. According to these trends, Mitsubishi Electric would like to focus on environmental resistance and functionality (Legibility, Operability and Designablity) in pursuing our product development for the future vehicular display.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"43 24","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120822961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A voltage-programming pixel circuit for AMOLED display on the basis of a-IGZO TFTs is proposed. A diode-connected structure of the driving TFT is used to compensate the variations in threshold voltage (VTH) and mobility to reduce the current error rate (CER). The proposed circuit requires only two types of controlling lines. The simulation results show that the CERs are decreased to 5.8% for mobility variations of ±30%, and 11.6% for VTH variation of ±0.4V.
{"title":"An a-IGZO TFT AMOLED Pixel Circuit to Compensate Threshold Voltage and Mobility Variations","authors":"Shuiping Yi, Jixiang Wu, Congwei Liao, Ying Wang, Xinxin Huo, Shengdong Zhang","doi":"10.23919/AM-FPD.2018.8437423","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437423","url":null,"abstract":"A voltage-programming pixel circuit for AMOLED display on the basis of a-IGZO TFTs is proposed. A diode-connected structure of the driving TFT is used to compensate the variations in threshold voltage (V<inf>TH</inf>) and mobility to reduce the current error rate (CER). The proposed circuit requires only two types of controlling lines. The simulation results show that the CERs are decreased to 5.8% for mobility variations of ±30%, and 11.6% for V<inf>TH</inf> variation of ±0.4V.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125063289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437372
Jangwon Yun, J. Jang, M. Hong
We have verified that nano-cystalline silicon(nc-Si) and InGaZnO(IGZO) based Non Volatile Memory Thin Film Transistor(NVM-TFT) can be fabricated by effectively generating protons at room temperature(RT) in gate insulator(SiO2) with our developed Neutral Beam Assist System(NBAS). We also confirmed that the amount of protons can be controlled by measuring the memory window of the memory device. The device will be on display for next-generation wearable device displays. It will be applied to capacitor free OLED pixel circuit design, which will give many advantages such as low power, higher aperture ratio, and circuit simplification.
{"title":"Nonvolatile Memory TFT Using Neutral Particle Beam at Room Temperature to Generate Mobile Protons Moving in the Gate Insulator","authors":"Jangwon Yun, J. Jang, M. Hong","doi":"10.23919/AM-FPD.2018.8437372","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437372","url":null,"abstract":"We have verified that nano-cystalline silicon(nc-Si) and InGaZnO(IGZO) based Non Volatile Memory Thin Film Transistor(NVM-TFT) can be fabricated by effectively generating protons at room temperature(RT) in gate insulator(SiO2) with our developed Neutral Beam Assist System(NBAS). We also confirmed that the amount of protons can be controlled by measuring the memory window of the memory device. The device will be on display for next-generation wearable device displays. It will be applied to capacitor free OLED pixel circuit design, which will give many advantages such as low power, higher aperture ratio, and circuit simplification.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115232008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437416
Chuan Liu, Zhaogui Wang
We report a newly developed solution-processed amorphous oxide semiconductor, gallium-tin-oxide (GTO), for the active layer of thin-film transistors (TFTs). The transparent GTO thin film was fabricated by sol-gel process and patterned by photo-lithography into isolated arrays. The resulting TFTs exhibit a threshold voltage around zero-volgate, an on-off ratio as 106, and the field-effect mobility as 4.1 cm2/Vs. The electrical properties is readily higher than that of ZnO and comparable to solution-processed InGaZnO. Moreover, the un-capsulated TFTs exhibit better stablility in gate-bias stressing then solution-processed IGZO TFTs as measured in ambient conditions. The study may provide a new choice for the active layers for oxide-based TFTs and display technology.
{"title":"Solution-processed gallium-tin-oxide as a new choice for indium-free active layers in TFTs","authors":"Chuan Liu, Zhaogui Wang","doi":"10.23919/AM-FPD.2018.8437416","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437416","url":null,"abstract":"We report a newly developed solution-processed amorphous oxide semiconductor, gallium-tin-oxide (GTO), for the active layer of thin-film transistors (TFTs). The transparent GTO thin film was fabricated by sol-gel process and patterned by photo-lithography into isolated arrays. The resulting TFTs exhibit a threshold voltage around zero-volgate, an on-off ratio as 106, and the field-effect mobility as 4.1 cm2/Vs. The electrical properties is readily higher than that of ZnO and comparable to solution-processed InGaZnO. Moreover, the un-capsulated TFTs exhibit better stablility in gate-bias stressing then solution-processed IGZO TFTs as measured in ambient conditions. The study may provide a new choice for the active layers for oxide-based TFTs and display technology.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116870408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437388
Bongho Jang, Won-Yong Lee, Taegyun Kim, Sojeong Lee, Jaewon Jang
We report that ultraviolet (UV) ozone post-annealing improves the performance of SnO2 thin-film transistors (TFTs) fabricated by the sol-gel method at a low temperature of 300 °C. The SnO2 TFT treated with UV ozone post-annealing (two times) shows a field-effect mobility of 0.11 cm2/Vs, which is more than 40 times higher than the field-effect mobility of SnO2 TFTs without UV ozone treatment. Further, the on/off current ratio and subthreshold swing improved to 1.83×105 and 2.09 V/dec, respectively.
{"title":"UV/ozone-process-assisted low-temperature SnO2 thin-film transistors","authors":"Bongho Jang, Won-Yong Lee, Taegyun Kim, Sojeong Lee, Jaewon Jang","doi":"10.23919/AM-FPD.2018.8437388","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437388","url":null,"abstract":"We report that ultraviolet (UV) ozone post-annealing improves the performance of SnO<inf>2</inf> thin-film transistors (TFTs) fabricated by the sol-gel method at a low temperature of 300 °C. The SnO<inf>2</inf> TFT treated with UV ozone post-annealing (two times) shows a field-effect mobility of 0.11 cm<sup>2</sup>/Vs, which is more than 40 times higher than the field-effect mobility of SnO<inf>2</inf> TFTs without UV ozone treatment. Further, the on/off current ratio and subthreshold swing improved to 1.83×10<sup>5</sup> and 2.09 V/dec, respectively.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"11 41","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131437858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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