Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437443
Bernhard Straub, Daimler Ag
This paper designs a robot rapid moving strategy based on curve model. The virtual target points are introduced into the path planning of the robot so that the robot can complete the task smoothly and quickly. We give the method to solve the curve model in detail. At the same time, the design of state feedback from the robot control model based on the turning radius is used to solve the practical error problem. Simulation experiments show that the design of virtual target points can not only make the robot complete the task faster, but also can be applied to multi-robot formation control. The real experiment shows that the curve model can correct the error through the robot state feedback and finally make the robots reach the target point successfully.
{"title":"Automotive Displays - Increasing and Challenging Market","authors":"Bernhard Straub, Daimler Ag","doi":"10.23919/AM-FPD.2018.8437443","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437443","url":null,"abstract":"This paper designs a robot rapid moving strategy based on curve model. The virtual target points are introduced into the path planning of the robot so that the robot can complete the task smoothly and quickly. We give the method to solve the curve model in detail. At the same time, the design of state feedback from the robot control model based on the turning radius is used to solve the practical error problem. Simulation experiments show that the design of virtual target points can not only make the robot complete the task faster, but also can be applied to multi-robot formation control. The real experiment shows that the curve model can correct the error through the robot state feedback and finally make the robots reach the target point successfully.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121730950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437419
Seongdae Choi, Sangwoo Kim, Taehoon Kim, Byungmoon Lee, Yongtaek Hong
There have been a number of researches about conductive thin films that can be used for strain sensors in stretchable electronics. However, the electrical conductance of most single-axis strain sensors are not only affected by principal tensile direction, but also by perpendicular tensile direction on 2-dimensional stretchable platform, owing to Poisson's ratio of elastomeric substrate. We demonstrate strain sensors of silver inkjet-printed on an asymmetrically pre-strained roughened poly(dimethylsiloxane) (PDMS) substrate which remarkably reduces the influence by perpendicular strain. Furthermore, 2-dimensional stretchable LED array which makes up for reduced resolution as the platform is stretched was fabricated using the strain sensors.
{"title":"2-D Strain Sensors with Asymmetrically Pre-stretched Metal Thin Film for Multidimensionally Stretchable Electronics","authors":"Seongdae Choi, Sangwoo Kim, Taehoon Kim, Byungmoon Lee, Yongtaek Hong","doi":"10.23919/AM-FPD.2018.8437419","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437419","url":null,"abstract":"There have been a number of researches about conductive thin films that can be used for strain sensors in stretchable electronics. However, the electrical conductance of most single-axis strain sensors are not only affected by principal tensile direction, but also by perpendicular tensile direction on 2-dimensional stretchable platform, owing to Poisson's ratio of elastomeric substrate. We demonstrate strain sensors of silver inkjet-printed on an asymmetrically pre-strained roughened poly(dimethylsiloxane) (PDMS) substrate which remarkably reduces the influence by perpendicular strain. Furthermore, 2-dimensional stretchable LED array which makes up for reduced resolution as the platform is stretched was fabricated using the strain sensors.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"5 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126007030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437342
Wen-Kuang Wu, Cheng-Ming Wang, M. Chan, J. Lien, Y. Su, Monima Sarma, Zu-Po Yang, Hai‐Ching Su, Ken‐Tsung Wong, Sue‐Lein Wang
We demonstrate that the correlated color temperatures (CCTs) of the white light-emitting electrochemical cells (LECs) can be tuned by modifying the optical properties of perovskite nanocrystals (NCs) in the color conversion layers (CCLs). By controlling the laser power, scanning number and duty cycle of the scanned grating patterns on perovskite-NC CCLs, the CCTs of the white LECs can be tuned from 2502 K to nearly 4300 K. This method is different from the conventional CCLs using multiple compositions of perovskite NCs to produce white light, so that it can avoid the inherent anion-exchange issue of perovskite NCs.
{"title":"Laser-Scanned Programmable Perovskite-Nanocrystal Color Conversion Layers for White Light-Emitting Electrochemical Cells","authors":"Wen-Kuang Wu, Cheng-Ming Wang, M. Chan, J. Lien, Y. Su, Monima Sarma, Zu-Po Yang, Hai‐Ching Su, Ken‐Tsung Wong, Sue‐Lein Wang","doi":"10.23919/AM-FPD.2018.8437342","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437342","url":null,"abstract":"We demonstrate that the correlated color temperatures (CCTs) of the white light-emitting electrochemical cells (LECs) can be tuned by modifying the optical properties of perovskite nanocrystals (NCs) in the color conversion layers (CCLs). By controlling the laser power, scanning number and duty cycle of the scanned grating patterns on perovskite-NC CCLs, the CCTs of the white LECs can be tuned from 2502 K to nearly 4300 K. This method is different from the conventional CCLs using multiple compositions of perovskite NCs to produce white light, so that it can avoid the inherent anion-exchange issue of perovskite NCs.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123953528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437355
Tomofumi Onuki, A. Heya, N. Matsuo
In order to improve the electrical characteristics of the fabricated AlOx/GeOx/a-Ge stack structure on a quartz substrate by thermal treatment, the effect of Atomic Hydrogen Annealing (AHA) was investigated. The AlOx/GeOx stack structure was exposed to atomic hydrogen generated by catalytic cracking reaction. We measured the change in the electrical properties by AHA treatment and studied the reaction with atomic hydrogen in the insulator films. The reduction of leakage current by 1 order of magnitude and the improvement of hysteresis were confirmed by current-voltage measurement and capacitance-voltage measurement, respectively. It is assumed that GeOxnetwork is stabilized including the Al atoms in it and reducing the energetically unstable bonds.
{"title":"Effect of atomic hydrogen annealing on AlOx/GeOx/a-Ge stack structure","authors":"Tomofumi Onuki, A. Heya, N. Matsuo","doi":"10.23919/AM-FPD.2018.8437355","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437355","url":null,"abstract":"In order to improve the electrical characteristics of the fabricated AlOx/GeOx/a-Ge stack structure on a quartz substrate by thermal treatment, the effect of Atomic Hydrogen Annealing (AHA) was investigated. The AlOx/GeOx stack structure was exposed to atomic hydrogen generated by catalytic cracking reaction. We measured the change in the electrical properties by AHA treatment and studied the reaction with atomic hydrogen in the insulator films. The reduction of leakage current by 1 order of magnitude and the improvement of hysteresis were confirmed by current-voltage measurement and capacitance-voltage measurement, respectively. It is assumed that GeOxnetwork is stabilized including the Al atoms in it and reducing the energetically unstable bonds.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"02 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129127075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437361
T. Nagao, T. Uehara, K. Yasuta, Y. Inouchi, J. Tatemichi, M. Hasumi, T. Sameshima
Ion implantation of 1.5xl016-cm−2 H+ at 8 keV or 1.0xl014-cm−2 Ar+ at 70 keV was carried out at room temperature (RT) to crystalline silicon in advance of ion implantation of 1.0×10-15-cm−2B+ at RT. Decrease in the crystalline volume ratio and generation of crystalline defects were promoted by the first H+ or Ar+ implantation. Subsequently post heating at 300°C for 30 min decreased the sheet resistivity to 520 and 890 Ω/sq in the cases of the H+ and Ar+ implantation, respectively. The decreases in the sheet resistivity by 300°C post annealing is interpreted that formation of crystalline defects by the first H+ or Ar+ implantation decreased the activation energy for moving boron atoms from the interstitial to lattice sites and achieved carrier generation at the low temperature.
{"title":"Two-Step Ion Implantation used for Activating Boron Atoms in Silicon at 300°C","authors":"T. Nagao, T. Uehara, K. Yasuta, Y. Inouchi, J. Tatemichi, M. Hasumi, T. Sameshima","doi":"10.23919/AM-FPD.2018.8437361","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437361","url":null,"abstract":"Ion implantation of 1.5xl0<sup>16</sup>-cm<sup>−2</sup> H<sup>+</sup> at 8 keV or 1.0xl0<sup>14</sup>-cm<sup>−2</sup> Ar<sup>+</sup> at 70 keV was carried out at room temperature (RT) to crystalline silicon in advance of ion implantation of 1.0×10-15-cm<sup>−2</sup>B<sup>+</sup> at RT. Decrease in the crystalline volume ratio and generation of crystalline defects were promoted by the first H<sup>+</sup> or Ar<sup>+</sup> implantation. Subsequently post heating at 300°C for 30 min decreased the sheet resistivity to 520 and 890 Ω/sq in the cases of the H<sup>+</sup> and Ar<sup>+</sup> implantation, respectively. The decreases in the sheet resistivity by 300°C post annealing is interpreted that formation of crystalline defects by the first H<sup>+</sup> or Ar<sup>+</sup> implantation decreased the activation energy for moving boron atoms from the interstitial to lattice sites and achieved carrier generation at the low temperature.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122990258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437433
David S. Hermann
This paper designs a robot rapid moving strategy based on curve model. The virtual target points are introduced into the path planning of the robot so that the robot can complete the task smoothly and quickly. We give the method to solve the curve model in detail. At the same time, the design of state feedback from the robot control model based on the turning radius is used to solve the practical error problem. Simulation experiments show that the design of virtual target points can not only make the robot complete the task faster, but also can be applied to multi-robot formation control. The real experiment shows that the curve model can correct the error through the robot state feedback and finally make the robots reach the target point successfully.
{"title":"Automotive Displays - Trends, Opportunities and Challenges","authors":"David S. Hermann","doi":"10.23919/AM-FPD.2018.8437433","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437433","url":null,"abstract":"This paper designs a robot rapid moving strategy based on curve model. The virtual target points are introduced into the path planning of the robot so that the robot can complete the task smoothly and quickly. We give the method to solve the curve model in detail. At the same time, the design of state feedback from the robot control model based on the turning radius is used to solve the practical error problem. Simulation experiments show that the design of virtual target points can not only make the robot complete the task faster, but also can be applied to multi-robot formation control. The real experiment shows that the curve model can correct the error through the robot state feedback and finally make the robots reach the target point successfully.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132546159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437405
Yu-Sheng Lin, P. Lai, Fu-Hsing Chen, Zong-Lin Yang, Chih-Lung Lin
This paper designs a robot rapid moving strategy based on curve model. The virtual target points are introduced into the path planning of the robot so that the robot can complete the task smoothly and quickly. We give the method to solve the curve model in detail. At the same time, the design of state feedback from the robot control model based on the turning radius is used to solve the practical error problem. Simulation experiments show that the design of virtual target points can not only make the robot complete the task faster, but also can be applied to multi-robot formation control. The real experiment shows that the curve model can correct the error through the robot state feedback and finally make the robots reach the target point successfully.
{"title":"Hydrogenated Amorphous Silicon Gate Driver with Charge-Holding Scheme for in-Cell Touch Panels","authors":"Yu-Sheng Lin, P. Lai, Fu-Hsing Chen, Zong-Lin Yang, Chih-Lung Lin","doi":"10.23919/AM-FPD.2018.8437405","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437405","url":null,"abstract":"This paper designs a robot rapid moving strategy based on curve model. The virtual target points are introduced into the path planning of the robot so that the robot can complete the task smoothly and quickly. We give the method to solve the curve model in detail. At the same time, the design of state feedback from the robot control model based on the turning radius is used to solve the practical error problem. Simulation experiments show that the design of virtual target points can not only make the robot complete the task faster, but also can be applied to multi-robot formation control. The real experiment shows that the curve model can correct the error through the robot state feedback and finally make the robots reach the target point successfully.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114341630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437383
So-Jung Yoon, Nak-Jin Seong, Kyu-jeong Choi, W. Shin, S. Yoon
We investigated the device stabilities of thin-film transistors using In-Ga-Zn-O (IGZO) channels prepared by atomic-layer deposition process when the channel thickness was varied to 10 and 6 nm. Even when the IGZO channel thickness was reduced to 6 nm, the device exhibited good performances with a high saturation mobility of 15.1 cm2/Vs and low subthreshold swing of 0.12 V/dec. The positive and negative bias stress stabilities were found to be excellent. Under positive bias temperature stress stability test at 60 °C for 104 s, the threshold voltage shifts of the device were estimated to be as low as −2.2 and −1.8 V for the channel thicknesses with 10 and 6 nm, respectively. The time dependences of threshold voltage shift under various bias, temperature, and illumination stress conditions could be explained by a stretched-exponential equation.
{"title":"Characterizations on the Device Stabilities of the Oxide Thin Film Transistors Using In-Ga-Zn-O Channels Prepared by Atomic-Layer Deposition","authors":"So-Jung Yoon, Nak-Jin Seong, Kyu-jeong Choi, W. Shin, S. Yoon","doi":"10.23919/AM-FPD.2018.8437383","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437383","url":null,"abstract":"We investigated the device stabilities of thin-film transistors using In-Ga-Zn-O (IGZO) channels prepared by atomic-layer deposition process when the channel thickness was varied to 10 and 6 nm. Even when the IGZO channel thickness was reduced to 6 nm, the device exhibited good performances with a high saturation mobility of 15.1 cm2/Vs and low subthreshold swing of 0.12 V/dec. The positive and negative bias stress stabilities were found to be excellent. Under positive bias temperature stress stability test at 60 °C for 104 s, the threshold voltage shifts of the device were estimated to be as low as −2.2 and −1.8 V for the channel thicknesses with 10 and 6 nm, respectively. The time dependences of threshold voltage shift under various bias, temperature, and illumination stress conditions could be explained by a stretched-exponential equation.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114850928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437364
Jongchan Lee, Jaehyun Moon, JaeEun Pi, S. Cho, Hee‐Ok Kim, Himchan Oh, Chi-Sun Hwang, Seong-Deok Ahn, Seung-Youl Kang, K. Kwon
We studied transparent thin film transistors with a triple-layer channel structure of aluminium-doped indium zinc tin oxide (Al-IZTO) / indium zinc oxide (IZO) / Al-IZTO to suppress the persistent photoconductivity (PPC). The TFT was fabricated top-gate, bottom-contact structure. The characteristics of Al-IZTO triple-layer exhibited high mobility (μ sat) of3 2 cm2/Vs, Vth of −4V, and sub-threshold swing of 260 mV/dec. We applied a positive gate pulse to Al-IZTO triple-layer TFT and the PPC was shrunk in a short time span of 55 ms with 10 μs gate pulse. Our TFT scheme can be readily applied as photo TFTs where stable operation and electrical manipulations of PPC are desired.
{"title":"Transparent triple-layer oxide TFT for enhanced photo switching characteristics","authors":"Jongchan Lee, Jaehyun Moon, JaeEun Pi, S. Cho, Hee‐Ok Kim, Himchan Oh, Chi-Sun Hwang, Seong-Deok Ahn, Seung-Youl Kang, K. Kwon","doi":"10.23919/AM-FPD.2018.8437364","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437364","url":null,"abstract":"We studied transparent thin film transistors with a triple-layer channel structure of aluminium-doped indium zinc tin oxide (Al-IZTO) / indium zinc oxide (IZO) / Al-IZTO to suppress the persistent photoconductivity (PPC). The TFT was fabricated top-gate, bottom-contact structure. The characteristics of Al-IZTO triple-layer exhibited high mobility (μ sat) of3 2 cm2/Vs, Vth of −4V, and sub-threshold swing of 260 mV/dec. We applied a positive gate pulse to Al-IZTO triple-layer TFT and the PPC was shrunk in a short time span of 55 ms with 10 μs gate pulse. Our TFT scheme can be readily applied as photo TFTs where stable operation and electrical manipulations of PPC are desired.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121613912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437427
Kota Imanishi, Asuka Fukawa, T. Matsuda, M. Kimura
We investigated the Hall effect of the GTO thin film and the GTO thin film transistor (TFT). The Hall effect mobility in the GTO thin film was 1.21 cm2Ns, which was much smaller than the field effect mobility of the GTO TFT. Next, we made a GTO TFT. The highest field effect mobility of GTO TFT was 8.04 cm2Ns. Moreover, the highest Hall effect mobility of GTO TFT was 7.66 cm2Ns. Hall effect mobility and field effect mobility were almost the same. In addition, the GTO TFT showed higher Hall effect mobility than the GTO thin film. It was thought that the Fermi level rose by applying the gate voltage.
{"title":"Characteristic Evaluation of Ga-Sn-O Thin Films by Hall Measurement","authors":"Kota Imanishi, Asuka Fukawa, T. Matsuda, M. Kimura","doi":"10.23919/AM-FPD.2018.8437427","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437427","url":null,"abstract":"We investigated the Hall effect of the GTO thin film and the GTO thin film transistor (TFT). The Hall effect mobility in the GTO thin film was 1.21 cm2Ns, which was much smaller than the field effect mobility of the GTO TFT. Next, we made a GTO TFT. The highest field effect mobility of GTO TFT was 8.04 cm2Ns. Moreover, the highest Hall effect mobility of GTO TFT was 7.66 cm2Ns. Hall effect mobility and field effect mobility were almost the same. In addition, the GTO TFT showed higher Hall effect mobility than the GTO thin film. It was thought that the Fermi level rose by applying the gate voltage.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"3 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114935238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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