Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497376
S. Lee, Dong Sung Kim, S.S. Lee, T. Kwon
In this paper, the split and recombination (SAR) micromixer is fabricated using microfabrication process for PDMS and evaluated efficiency of SAR mixing method which increase interfaces exponentially. Simulation using CFD-ACE+ shows a cross-sectional view of flow and estimates mixing efficiency of the SAR micromixer. Mixing experiment of phenolphthalein and NaOH solution shows interfaces as red lines increased by SAR mixing. The result of mixing experiment of blue dye and water is evaluated mixing efficiency by calculation of standard deviation of pixel intensity of the observed image. After 7/sup th/ unit of the SAR micromixer, fluids are mixed 90% at Re 0.6099. More units are demanded for complete mixing when flow rate increases.
{"title":"Split and recombination micromixer based on PDMS three-dimensional micro structure","authors":"S. Lee, Dong Sung Kim, S.S. Lee, T. Kwon","doi":"10.1109/SENSOR.2005.1497376","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497376","url":null,"abstract":"In this paper, the split and recombination (SAR) micromixer is fabricated using microfabrication process for PDMS and evaluated efficiency of SAR mixing method which increase interfaces exponentially. Simulation using CFD-ACE+ shows a cross-sectional view of flow and estimates mixing efficiency of the SAR micromixer. Mixing experiment of phenolphthalein and NaOH solution shows interfaces as red lines increased by SAR mixing. The result of mixing experiment of blue dye and water is evaluated mixing efficiency by calculation of standard deviation of pixel intensity of the observed image. After 7/sup th/ unit of the SAR micromixer, fluids are mixed 90% at Re 0.6099. More units are demanded for complete mixing when flow rate increases.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"37 1","pages":"1533-1536 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85780544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497354
V.K. Singh, M. Sasaki, K. Hane, Y. Watanabe, M. Kawakita, H. Hayashi
Fabricating microelectromechanical systems (MEMS) structures poses many processing challenges. This paper describes photolithography on high aspect ratio microstructures. Transferred pattern depends on a deposited resist film quality. Spin coating cannot be used for preparing the quality resist film on the deep structures. We have developed spray coating technique using a negative photoresist. Lessons learned from spray conditions of the negative resist are applied to the positive resist, which requires higher technical level.
{"title":"Photolithography on three-dimensional structures using spray coated negative and positive photoresists","authors":"V.K. Singh, M. Sasaki, K. Hane, Y. Watanabe, M. Kawakita, H. Hayashi","doi":"10.1109/SENSOR.2005.1497354","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497354","url":null,"abstract":"Fabricating microelectromechanical systems (MEMS) structures poses many processing challenges. This paper describes photolithography on high aspect ratio microstructures. Transferred pattern depends on a deposited resist film quality. Spin coating cannot be used for preparing the quality resist film on the deep structures. We have developed spray coating technique using a negative photoresist. Lessons learned from spray conditions of the negative resist are applied to the positive resist, which requires higher technical level.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"41 1","pages":"1445-1448 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85823520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497284
S. Yuuki, M. Sasaki, K. Hane
A micromirror device is developed realizing the large-rotation and the low-voltage driving. The bulk Si micromirror is suspended with the thin film torsion bars. Inside the torsion bar, the tension is included for suppressing the additional movement (e.g., vertical movement or in-plane rotation). The torsion bar can be compliant in the mirror rotation and stiff in other movement. The rotation of 7.3 degrees is obtained at 5 V.
{"title":"Large-rotation and low-voltage driving realized by micromirror with vertical comb and tense thin film torsion bar","authors":"S. Yuuki, M. Sasaki, K. Hane","doi":"10.1109/SENSOR.2005.1497284","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497284","url":null,"abstract":"A micromirror device is developed realizing the large-rotation and the low-voltage driving. The bulk Si micromirror is suspended with the thin film torsion bars. Inside the torsion bar, the tension is included for suppressing the additional movement (e.g., vertical movement or in-plane rotation). The torsion bar can be compliant in the mirror rotation and stiff in other movement. The rotation of 7.3 degrees is obtained at 5 V.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"55 1","pages":"1163-1166 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85838022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497496
Dong-Sun Kim, Dae-Il Han, Jee-Eun Park, Jang-Kyoo Shin, P. Choi, Jong-Hyun Lee, G. Lim, S. Shoji
In this paper, the authors described an extended gate field effect transistor (EGFET)-based biosensor for the detection of streptavidin-biotin protein complexes in a silicon micro-fluidic channel. The connection between EGFET and micro-fluidic system could be achieved with the proposed device, offering merits of isolation between the device and solution, compatibility with the integrated circuit (IC) technology and applicability in the micro total analysis system (/spl mu/-TAS). The device was fabricated on the basis of the semiconductor IC fabrication and micro-electro mechanical system (MEMS) technology. Au was used as the extended gate metal to form a self-assembled monolayer (SAM) with thiol. The bindings of SAM, streptavidin and biotin were detected by measuring the electrical characteristics of the FET device.
{"title":"An extended gate field effect transistor based protein sensor integrated with a Si micro-fluidic channel","authors":"Dong-Sun Kim, Dae-Il Han, Jee-Eun Park, Jang-Kyoo Shin, P. Choi, Jong-Hyun Lee, G. Lim, S. Shoji","doi":"10.1109/SENSOR.2005.1497496","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497496","url":null,"abstract":"In this paper, the authors described an extended gate field effect transistor (EGFET)-based biosensor for the detection of streptavidin-biotin protein complexes in a silicon micro-fluidic channel. The connection between EGFET and micro-fluidic system could be achieved with the proposed device, offering merits of isolation between the device and solution, compatibility with the integrated circuit (IC) technology and applicability in the micro total analysis system (/spl mu/-TAS). The device was fabricated on the basis of the semiconductor IC fabrication and micro-electro mechanical system (MEMS) technology. Au was used as the extended gate metal to form a self-assembled monolayer (SAM) with thiol. The bindings of SAM, streptavidin and biotin were detected by measuring the electrical characteristics of the FET device.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"286 1","pages":"2011-2014 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85851098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496638
R. Reichenbach, K. Aubin, M. Zalalutdinov, J. Parpia, H. Craighead
We present a method to create an RF MEMS oscillator with continuous control of the output phase and frequency. When the weakly nonlinear oscillating system becomes synchronized with an imposed sinusoidal force of close frequency, the resonator frequency can be detuned with a DC bias on a resistive actuator to produce an easily controlled phase differential between the injected signal and the resonator feedback. We demonstrate a 26 MHz MEMS oscillator with frequency tunability of 0.3% and phase tunability of 200/spl deg/. By modulating the Joule heat dissipated in the structure, a 26 MHz carrier frequency was either frequency modulated by a 30 kHz baseband signal with a modulation depth of 15 kHz, or phase modulated by a 20 kHz baseband signal with a modulation depth of 160/spl deg/.
{"title":"A MEMS RF phase and frequency modulator","authors":"R. Reichenbach, K. Aubin, M. Zalalutdinov, J. Parpia, H. Craighead","doi":"10.1109/SENSOR.2005.1496638","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496638","url":null,"abstract":"We present a method to create an RF MEMS oscillator with continuous control of the output phase and frequency. When the weakly nonlinear oscillating system becomes synchronized with an imposed sinusoidal force of close frequency, the resonator frequency can be detuned with a DC bias on a resistive actuator to produce an easily controlled phase differential between the injected signal and the resonator feedback. We demonstrate a 26 MHz MEMS oscillator with frequency tunability of 0.3% and phase tunability of 200/spl deg/. By modulating the Joule heat dissipated in the structure, a 26 MHz carrier frequency was either frequency modulated by a 30 kHz baseband signal with a modulation depth of 15 kHz, or phase modulated by a 20 kHz baseband signal with a modulation depth of 160/spl deg/.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"22 1","pages":"1059-1062 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85934709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497365
T. Arakawa, Y. Sato, T. Ueno, T. Funatsu, S. Shoji
Useful Pyrex glass etching method using HF and H/sub 2/SO/sub 4/ mixed acid was studied. To realize the etching behaviors of constant etch rate, high masks durability, small under cut and pinhole free, optimum composition of HF-H/sub 2/SO/sub 4/ system was found out. Pinhole-free etching, constant etching rate of 0.5 /spl mu/m/min and smooth surface of less than 4.6 nm was obtained at 0.8vol% HF and 32vol% H/sub 2/SO/sub 4/. This system realized high durability of the etching mask of Si, Cr/Au and even photoresists. This method is useful not only to fabricate Pyrex glass microchannels but also to make PDMS molds. We fabricated a prototype of the pneumatic actuated microvalve system for the single molecular imaging under total internal reflection fluorescence microscopy (TIRFM). The leakage free valve actions are confirmed and the switching time of open-close and close-open modes are 100 msec and 120 msec respectively.
{"title":"Pinhole-free Pyrex glass etching using HF-H/sub 2/SO/sub 4/ mixed acid and its applications for a PDMS microflow system","authors":"T. Arakawa, Y. Sato, T. Ueno, T. Funatsu, S. Shoji","doi":"10.1109/SENSOR.2005.1497365","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497365","url":null,"abstract":"Useful Pyrex glass etching method using HF and H/sub 2/SO/sub 4/ mixed acid was studied. To realize the etching behaviors of constant etch rate, high masks durability, small under cut and pinhole free, optimum composition of HF-H/sub 2/SO/sub 4/ system was found out. Pinhole-free etching, constant etching rate of 0.5 /spl mu/m/min and smooth surface of less than 4.6 nm was obtained at 0.8vol% HF and 32vol% H/sub 2/SO/sub 4/. This system realized high durability of the etching mask of Si, Cr/Au and even photoresists. This method is useful not only to fabricate Pyrex glass microchannels but also to make PDMS molds. We fabricated a prototype of the pneumatic actuated microvalve system for the single molecular imaging under total internal reflection fluorescence microscopy (TIRFM). The leakage free valve actions are confirmed and the switching time of open-close and close-open modes are 100 msec and 120 msec respectively.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"27 1","pages":"1489-1492 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86859282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497500
C. Baek, Jong-Man Kim, Yong-Kweon Kim, Hak-Joo Lee, Jae Hyun Kim, K. Cho
In this paper, force-calibrated AFM device with a novel rhombus-shaped AFM cantilever has been demonstrated for bending test of micro/nanoscale thin films. The rhombus-shaped AFM cantilever is designed to be symmetric around the loading axis, and thus robust to the lateral movement that a conventional beam-shaped AFM cantilever may have. This new cantilever structure has been fabricated and assembled with the AFM to measure the mechanical properties of gold strip specimens. With appropriate calibration procedures, this system can improve the measurement accuracy of the strip bending test.
{"title":"Force-calibrated AFM with rhombus-shaped cantilever for bending test of micro/nanoscale thin films","authors":"C. Baek, Jong-Man Kim, Yong-Kweon Kim, Hak-Joo Lee, Jae Hyun Kim, K. Cho","doi":"10.1109/SENSOR.2005.1497500","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497500","url":null,"abstract":"In this paper, force-calibrated AFM device with a novel rhombus-shaped AFM cantilever has been demonstrated for bending test of micro/nanoscale thin films. The rhombus-shaped AFM cantilever is designed to be symmetric around the loading axis, and thus robust to the lateral movement that a conventional beam-shaped AFM cantilever may have. This new cantilever structure has been fabricated and assembled with the AFM to measure the mechanical properties of gold strip specimens. With appropriate calibration procedures, this system can improve the measurement accuracy of the strip bending test.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"99 1","pages":"2027-2030 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87488648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496410
Mark G. Allen
Passive wireless pressure sensors, originally developed for use in harsh environments, have been adapted for use in the human body. The application of these sensors is as monitors of endovascularly repaired abdominal aortic aneurysms. For this application, the devices must be permanently implanted deep within the body and be functional for the remainder of the patient's life. Microelectromechanical systems (MEMS) manufacturing technologies have been utilized to fabricate sensors with sizes and form factors suitable for endovascular delivery and permanent implantation. The sensors are interrogated with an external measurement antenna and a real-time waveform of the pressure environment is extracted. This paper reports the development and clinical demonstration of these sensors.
{"title":"Micromachined endovascularly-implantable wireless aneurysm pressure sensors: from concept to clinic","authors":"Mark G. Allen","doi":"10.1109/SENSOR.2005.1496410","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496410","url":null,"abstract":"Passive wireless pressure sensors, originally developed for use in harsh environments, have been adapted for use in the human body. The application of these sensors is as monitors of endovascularly repaired abdominal aortic aneurysms. For this application, the devices must be permanently implanted deep within the body and be functional for the remainder of the patient's life. Microelectromechanical systems (MEMS) manufacturing technologies have been utilized to fabricate sensors with sizes and form factors suitable for endovascular delivery and permanent implantation. The sensors are interrogated with an external measurement antenna and a real-time waveform of the pressure environment is extracted. This paper reports the development and clinical demonstration of these sensors.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"34 1","pages":"275-278 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87503331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496456
R. Okojie, J. Delaat, J. Saus
We have utilized a single crystal silicon carbide (SiC) pressure sensor to validate the existence of thermo-acoustic instability at 310 Hz in a combustor test rig operating at 420 /spl deg/C and about 180 psi. The MEMS SiC pressure sensor was packaged by the direct chip attach (DCA) method, which eliminated the wire bonding process and the reliability issues associated with it when exposed to high temperature and high vibration environments. The result obtained by using this un-cooled SiC pressure sensor was in excellent agreement with the result obtained from a water-cooled piezoceramic pressure transducer located in close proximity to the SiC sensor. This result provides further confirmation of the viability of a robust SiC pressure sensor with less complex packaging for application in high temperature and high vibration environments.
{"title":"SiC pressure sensor for detection of combustor thermoacoustic instabilities [aircraft engine applications]","authors":"R. Okojie, J. Delaat, J. Saus","doi":"10.1109/SENSOR.2005.1496456","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496456","url":null,"abstract":"We have utilized a single crystal silicon carbide (SiC) pressure sensor to validate the existence of thermo-acoustic instability at 310 Hz in a combustor test rig operating at 420 /spl deg/C and about 180 psi. The MEMS SiC pressure sensor was packaged by the direct chip attach (DCA) method, which eliminated the wire bonding process and the reliability issues associated with it when exposed to high temperature and high vibration environments. The result obtained by using this un-cooled SiC pressure sensor was in excellent agreement with the result obtained from a water-cooled piezoceramic pressure transducer located in close proximity to the SiC sensor. This result provides further confirmation of the viability of a robust SiC pressure sensor with less complex packaging for application in high temperature and high vibration environments.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"29 1","pages":"470-473 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78927582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496506
Kaili Zhang, S. Chou, S. Ang
Low temperature co-fired ceramic (LTCC) technology is employed to develop a solid propellant microthruster. The LTCC solid propellant microthruster has many potential applications for micropropulsion in microspacecraft, such as high-accuracy station keeping, attitude control, and orbit adjust. The design and fabrication of the microthruster are presented. Performance of the embedded thin film igniter is studied for better understanding of the ignition process. Results from experiments on microcombustion, and thrust and impulse measurements both at sea level and in vacuum are reported.
{"title":"A low temperature co-fired ceramic solid propellant microthruster for micropropulsion applications","authors":"Kaili Zhang, S. Chou, S. Ang","doi":"10.1109/SENSOR.2005.1496506","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496506","url":null,"abstract":"Low temperature co-fired ceramic (LTCC) technology is employed to develop a solid propellant microthruster. The LTCC solid propellant microthruster has many potential applications for micropropulsion in microspacecraft, such as high-accuracy station keeping, attitude control, and orbit adjust. The design and fabrication of the microthruster are presented. Performance of the embedded thin film igniter is studied for better understanding of the ignition process. Results from experiments on microcombustion, and thrust and impulse measurements both at sea level and in vacuum are reported.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"316 1","pages":"672-675 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76455194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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