Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497287
Y. Yamauchi, A. Higo, K. Kakushima, H. Fujita, H. Toshiyoshi
In this paper, we report a new concept of optical MEMS (Micro Electro Mechanical System) devices that could be operated by the incident light and to operate yet another light beam; in other words, a light beam is controlled by another light beam through an optical MEMS mirror. A photodiode and an electrostatic micro mirror are integrated into an SOI (silicon-on-insulator) wafer, whose circuit diagram is equivalent to that of a photocoupler. The mechanism can be used for free-space optical computing and optically-addressed fiber optic crossconnect.
{"title":"A light-in light-out micro mirror device","authors":"Y. Yamauchi, A. Higo, K. Kakushima, H. Fujita, H. Toshiyoshi","doi":"10.1109/SENSOR.2005.1497287","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497287","url":null,"abstract":"In this paper, we report a new concept of optical MEMS (Micro Electro Mechanical System) devices that could be operated by the incident light and to operate yet another light beam; in other words, a light beam is controlled by another light beam through an optical MEMS mirror. A photodiode and an electrostatic micro mirror are integrated into an SOI (silicon-on-insulator) wafer, whose circuit diagram is equivalent to that of a photocoupler. The mechanism can be used for free-space optical computing and optically-addressed fiber optic crossconnect.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"17 1","pages":"1175-1178 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81884586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496560
Zhenchuan Yang, Ruonan Wang, Shuo Jia, Deliang Wang, Baoshun Zhang, K.J. Chen, K. Lau
A method for fabricating suspended gallium nitride (GaN) structures for microelectromechanical systems (MEMS) without direct etching of GaN is demonstrated. The process combines a selective area growth of GaN on patterned silicon substrate (GPS) and a subsequent sacrificial wet etching of the silicon under the GaN structures. Both anisotropic and isotropic wet etching techniques are used to carry out the sacrificial etching. Experimental results show that the GPS-MEMS technique can be used to batch-fabricate various GaN-based MEMS devices with common silicon micromachining equipment.
{"title":"GaN on patterned silicon (GPS) technique for fabrication of GaN-based MEMS","authors":"Zhenchuan Yang, Ruonan Wang, Shuo Jia, Deliang Wang, Baoshun Zhang, K.J. Chen, K. Lau","doi":"10.1109/SENSOR.2005.1496560","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496560","url":null,"abstract":"A method for fabricating suspended gallium nitride (GaN) structures for microelectromechanical systems (MEMS) without direct etching of GaN is demonstrated. The process combines a selective area growth of GaN on patterned silicon substrate (GPS) and a subsequent sacrificial wet etching of the silicon under the GaN structures. Both anisotropic and isotropic wet etching techniques are used to carry out the sacrificial etching. Experimental results show that the GPS-MEMS technique can be used to batch-fabricate various GaN-based MEMS devices with common silicon micromachining equipment.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"21 1","pages":"887-890 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84397867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496485
M. Ahn, Y. Han, H. Shin, K. Kim, S. Lee, S. Moon, M.H. Oh
We propose a versatile infrared (IR) absorbing structure for uncooled infrared detectors. We have designed an infrared absorber consisting of five thin film layers (dielectric layer/protection layer/active layer/supporting layer/reflecting layer) that produce a quarter-wavelength resonance condition. It has excellent thermal properties, which are not influenced by the deformation of the thermal isolation structure. We fabricated a microbolometer with the proposed IR absorption structure by a surface micromachining technology. We estimated an IR absorptance of 80%. This IR absorption structure can be applied to both surface micromachining and bulk micromachining.
{"title":"A floated absorbing structure for uncooled microbolometer","authors":"M. Ahn, Y. Han, H. Shin, K. Kim, S. Lee, S. Moon, M.H. Oh","doi":"10.1109/SENSOR.2005.1496485","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496485","url":null,"abstract":"We propose a versatile infrared (IR) absorbing structure for uncooled infrared detectors. We have designed an infrared absorber consisting of five thin film layers (dielectric layer/protection layer/active layer/supporting layer/reflecting layer) that produce a quarter-wavelength resonance condition. It has excellent thermal properties, which are not influenced by the deformation of the thermal isolation structure. We fabricated a microbolometer with the proposed IR absorption structure by a surface micromachining technology. We estimated an IR absorptance of 80%. This IR absorption structure can be applied to both surface micromachining and bulk micromachining.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"42 1","pages":"585-588 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85174249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496352
G. Lammel, S. Armbruster, C. Schelling, H. Benzel, J. Brasas, M. Illing, R. Gampp, V. Senz, F. Schafer, S. Finkbeiner
One of the first MEMS products - the pressure sensor - has still room for innovation. We report a completely new pressure sensor generation based on a novel surface micromachining technology. Using porous silicon the membrane fabrication can be monolithically integrated with high synergy in an analog/digital semiconductor process suited for high volume production in an IC-fabrication facility. Only two mask layers and one electrochemical etching step are inserted at the beginning of a standard IC-process to transform the epitaxial silicon layer from the electronic process into a monocrystalline membrane with a vacuum cavity under it.
{"title":"Next generation pressure sensors in surface micromachining technology","authors":"G. Lammel, S. Armbruster, C. Schelling, H. Benzel, J. Brasas, M. Illing, R. Gampp, V. Senz, F. Schafer, S. Finkbeiner","doi":"10.1109/SENSOR.2005.1496352","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496352","url":null,"abstract":"One of the first MEMS products - the pressure sensor - has still room for innovation. We report a completely new pressure sensor generation based on a novel surface micromachining technology. Using porous silicon the membrane fabrication can be monolithically integrated with high synergy in an analog/digital semiconductor process suited for high volume production in an IC-fabrication facility. Only two mask layers and one electrochemical etching step are inserted at the beginning of a standard IC-process to transform the epitaxial silicon layer from the electronic process into a monocrystalline membrane with a vacuum cavity under it.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"24 1","pages":"35-36 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81687029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496458
N. Friedrich, M. Boehm
A locally autocompensating image sensor was designed and fabricated in a 0.35 /spl mu/m standard CMOS process. Every pixel contains an automatic compensation circuit made of 13 transistors and 4 capacitors on an area of 38/spl times/38 /spl mu/m/sup 2/ that compensates the part of the photocurrent caused by undesired background illumination. This allows the capture of extremely weak optical signals in scenes with background illumination several hundred times stronger than the active signal. A prototype pixel array with fixed pattern noise (FPN) correction is presented, which demonstrates the enhanced performance of the sensor concept.
{"title":"A locally autocompensating image sensor","authors":"N. Friedrich, M. Boehm","doi":"10.1109/SENSOR.2005.1496458","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496458","url":null,"abstract":"A locally autocompensating image sensor was designed and fabricated in a 0.35 /spl mu/m standard CMOS process. Every pixel contains an automatic compensation circuit made of 13 transistors and 4 capacitors on an area of 38/spl times/38 /spl mu/m/sup 2/ that compensates the part of the photocurrent caused by undesired background illumination. This allows the capture of extremely weak optical signals in scenes with background illumination several hundred times stronger than the active signal. A prototype pixel array with fixed pattern noise (FPN) correction is presented, which demonstrates the enhanced performance of the sensor concept.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"18 1","pages":"479-482 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81859251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496512
Jongbaeg Kim, D. Christensen, Liwei Lin
We have demonstrated microfabricated, monolithic two degrees of freedom (2D) electrostatic torsional mirrors using a 3-mask process on SOI wafer with a single plastic deformation step. The mirror operated independently in two orthogonal directions as controlled by two sets of self-aligned angular vertical combs. The measured dynamic performance showed resonant frequencies of 10.56 kHz and 1.54 kHz with optical scanning angles up to 27 degrees and 20 degrees in the two orthogonal axes respectively, under driving voltages of 20V/sub dc/ plus 15V/sub pp/. A reliability test of 90-day continuous mirror operation that corresponds to peak resonance of 80- and 12.1-billion cycles on the two orthogonal axes showed negligible performance variations.
{"title":"2-D scanning mirror using plastically deformed angular vertical comb drive actuator","authors":"Jongbaeg Kim, D. Christensen, Liwei Lin","doi":"10.1109/SENSOR.2005.1496512","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496512","url":null,"abstract":"We have demonstrated microfabricated, monolithic two degrees of freedom (2D) electrostatic torsional mirrors using a 3-mask process on SOI wafer with a single plastic deformation step. The mirror operated independently in two orthogonal directions as controlled by two sets of self-aligned angular vertical combs. The measured dynamic performance showed resonant frequencies of 10.56 kHz and 1.54 kHz with optical scanning angles up to 27 degrees and 20 degrees in the two orthogonal axes respectively, under driving voltages of 20V/sub dc/ plus 15V/sub pp/. A reliability test of 90-day continuous mirror operation that corresponds to peak resonance of 80- and 12.1-billion cycles on the two orthogonal axes showed negligible performance variations.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"9 1","pages":"697-700 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83740891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496415
N. Sato, H. Ishii, M. Urano, T. Sakata, J. Terada, H. Morimura, S. Shigematsu, K. Kudou, T. Kamei, K. Machida
This paper describes a novel concept of an integrated power generator chip that utilizes environmental temperature differences and vibrations as power sources. In the concept, thermoelectric devices produce voltage by the Seebeck effect and vibrational devices produce electrostatic energy from the external kinetic energy of vibration. A monolithic fabrication process for these microelectromechanical systems (MEMS) devices is proposed based on the seamless integration technology (SeaiT) consisting of thick-film forming processes with deep reactive ion etching (DRIE) of Si, electroplating of gold and ashing of a sacrificial layer. The fabricated thermoelectric devices generated its voltage outputs under temperature difference. The vibrational devices were also evaluated by applying an ac voltage which showed its resonant frequency characteristics. The integration of the different types of power generation paves the way for utilizing small amounts of energy from human and environmental sources.
{"title":"Novel MEMS power generator with integrated thermoelectric and vibrational devices","authors":"N. Sato, H. Ishii, M. Urano, T. Sakata, J. Terada, H. Morimura, S. Shigematsu, K. Kudou, T. Kamei, K. Machida","doi":"10.1109/SENSOR.2005.1496415","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496415","url":null,"abstract":"This paper describes a novel concept of an integrated power generator chip that utilizes environmental temperature differences and vibrations as power sources. In the concept, thermoelectric devices produce voltage by the Seebeck effect and vibrational devices produce electrostatic energy from the external kinetic energy of vibration. A monolithic fabrication process for these microelectromechanical systems (MEMS) devices is proposed based on the seamless integration technology (SeaiT) consisting of thick-film forming processes with deep reactive ion etching (DRIE) of Si, electroplating of gold and ashing of a sacrificial layer. The fabricated thermoelectric devices generated its voltage outputs under temperature difference. The vibrational devices were also evaluated by applying an ac voltage which showed its resonant frequency characteristics. The integration of the different types of power generation paves the way for utilizing small amounts of energy from human and environmental sources.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"10 1","pages":"295-298 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84058458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496348
J. Bureau, B. Legrand, D. Collard, L. Buchaillot
This paper presents the development of suspended movable microstructures made of SU-8 photoresist where compressive stress leads to 3D self-assembled microstructures. Internal compressive stress in the photoresist is induced by an SF/sub 6/ based plasma process. Clamped-clamped beam structures have been fabricated to characterize the stress depending on the plasma duration and the lengths of the beams. A compressive stress of 48 MPa was calculated for a 3 minute plasma. X-ray photoelectron spectroscopy (XPS) analysis has been performed to characterize the surface of the structures. These mechanical properties could be used to make 3D self-assembled structures for applications in biological sciences.
{"title":"3D self-assembling of SU-8 microstructures on silicon by plasma induced compressive stress","authors":"J. Bureau, B. Legrand, D. Collard, L. Buchaillot","doi":"10.1109/SENSOR.2005.1496348","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496348","url":null,"abstract":"This paper presents the development of suspended movable microstructures made of SU-8 photoresist where compressive stress leads to 3D self-assembled microstructures. Internal compressive stress in the photoresist is induced by an SF/sub 6/ based plasma process. Clamped-clamped beam structures have been fabricated to characterize the stress depending on the plasma duration and the lengths of the beams. A compressive stress of 48 MPa was calculated for a 3 minute plasma. X-ray photoelectron spectroscopy (XPS) analysis has been performed to characterize the surface of the structures. These mechanical properties could be used to make 3D self-assembled structures for applications in biological sciences.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"209 1","pages":"19-22 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80593351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496425
D. Satoh, S. Tanaka, M. Esashi
The paper describes the components of a fuel and air supply system for a micro combustor. Liquid gas from a fuel cartridge is regulated by a micro valve, ejected from a nozzle, and then supplied, with air, to a micro combustor. The valve is composed of a largely-deformable corrugated diaphragm regulating fuel gas and two electrostatic valves controlling the corrugated diaphragm to realize low pressure loss, low power consumption and low driving voltage. The CFD (computational fluid dynamics) simulation of the ejector was performed, and compared with real experiments. The CFD simulation results fairly matched with the experimental results. The micro valve was fabricated and preliminarily tested. The pressure loss is as low as 11 Pa/sccm, and the electrostatic valve controlled butane with a pressure of 220 kPa at a driving voltage of 40 V.
{"title":"Fuel and air supply system for combustion based power sources","authors":"D. Satoh, S. Tanaka, M. Esashi","doi":"10.1109/SENSOR.2005.1496425","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496425","url":null,"abstract":"The paper describes the components of a fuel and air supply system for a micro combustor. Liquid gas from a fuel cartridge is regulated by a micro valve, ejected from a nozzle, and then supplied, with air, to a micro combustor. The valve is composed of a largely-deformable corrugated diaphragm regulating fuel gas and two electrostatic valves controlling the corrugated diaphragm to realize low pressure loss, low power consumption and low driving voltage. The CFD (computational fluid dynamics) simulation of the ejector was performed, and compared with real experiments. The CFD simulation results fairly matched with the experimental results. The micro valve was fabricated and preliminarily tested. The pressure loss is as low as 11 Pa/sccm, and the electrostatic valve controlled butane with a pressure of 220 kPa at a driving voltage of 40 V.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"92 1","pages":"337-341 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80304173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497449
M. Lei, W. Choi, Ronald A. Siegel, Babak Ziaie, Babak Ziaie
In this paper, we report on the fabrication and testing of an ultrasensitive chemical microsensor based on an environmentally sensitive hydrogel actuated cantilever beam. A single-mask dry-etching technique was used to pattern two kinds of hydrogels (pH and glucose sensitive) underneath the beam without requiring any alignment (self-aligned) and photoinitiators. The hydrogels swell in response to an increase in the pH or glucose concentration, thereby deflecting the microcantilevers by pushing it up. Typical sensitivities for a sensor having dimensions of 500 /spl times/ 20 /spl times/ 2 /spl mu/m/sup 3/ were measured to be /spl sim/7.2 /spl mu/m/pH units and 0.1 /spl mu/m/mM of glucose concentration. First order swelling pressures of 2550 and 1580 Pa were also calculated from the deflection measurements. Extreme extrapolated sensitivities of 1 nm/1.4 /spl times/ 10/sup -4/ pH unit and 1 nm/0.01 mM of glucose concentration can be achieved using an optical lever detection method similar to the ones employed in the AFMs (resolution of 1 nm). The measured response times for these sensors were several seconds (typically < 10 s).
{"title":"An ultrasensitive chemical microsensor based on self-aligned dry-patterned environmentally sensitive hydrogels","authors":"M. Lei, W. Choi, Ronald A. Siegel, Babak Ziaie, Babak Ziaie","doi":"10.1109/SENSOR.2005.1497449","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497449","url":null,"abstract":"In this paper, we report on the fabrication and testing of an ultrasensitive chemical microsensor based on an environmentally sensitive hydrogel actuated cantilever beam. A single-mask dry-etching technique was used to pattern two kinds of hydrogels (pH and glucose sensitive) underneath the beam without requiring any alignment (self-aligned) and photoinitiators. The hydrogels swell in response to an increase in the pH or glucose concentration, thereby deflecting the microcantilevers by pushing it up. Typical sensitivities for a sensor having dimensions of 500 /spl times/ 20 /spl times/ 2 /spl mu/m/sup 3/ were measured to be /spl sim/7.2 /spl mu/m/pH units and 0.1 /spl mu/m/mM of glucose concentration. First order swelling pressures of 2550 and 1580 Pa were also calculated from the deflection measurements. Extreme extrapolated sensitivities of 1 nm/1.4 /spl times/ 10/sup -4/ pH unit and 1 nm/0.01 mM of glucose concentration can be achieved using an optical lever detection method similar to the ones employed in the AFMs (resolution of 1 nm). The measured response times for these sensors were several seconds (typically < 10 s).","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"32 1","pages":"1824-1827 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80624476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}