Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497441
S. Hyun, H.S. Kim, Y. Kim, H.I. Jung
Here, we firstly report the detection of phospholiposomes by the highly sensitive microfabricated piezoresistive cantilever sensor chip and the phosphatidylserine (PS) recognition protein C2A which is chemically immobilized on the sensor surface. The signal created from the bending motion of the piezoresistive cantilever after the phospholiposome attachment has been monitored in real time. And the sensitivity of the sensor was determined judging from the co-relationship between electrical signal and the number of liposome particles.
{"title":"Nanomechanical detection of phospholiposome using piezoresistive cantilever sensor","authors":"S. Hyun, H.S. Kim, Y. Kim, H.I. Jung","doi":"10.1109/SENSOR.2005.1497441","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497441","url":null,"abstract":"Here, we firstly report the detection of phospholiposomes by the highly sensitive microfabricated piezoresistive cantilever sensor chip and the phosphatidylserine (PS) recognition protein C2A which is chemically immobilized on the sensor surface. The signal created from the bending motion of the piezoresistive cantilever after the phospholiposome attachment has been monitored in real time. And the sensitivity of the sensor was determined judging from the co-relationship between electrical signal and the number of liposome particles.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"4 1","pages":"1792-1795 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76380432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496626
N. Neumann, K. Hiller, S. Kurth
This contribution deals with the design, fabrication and test of a micromachined first order Fabry-Perot (FP) filter that is intended for use in advanced infrared gas analysis. To achieve optimal interference conditions within an FP filter, the roughness and the curvature of its reflectors must be minimized, while the parallelism between reflectors is maintained. The approach here minimizes mirror curvature by using 300 /spl mu/m thick mirror carriers for the coplanar fixed and movable reflectors of the FP filter. Dielectric reflectance stacks consisting of deposited alternating layers of silicon dioxide (SiO/sub 2/) and polycrystalline silicon (Si) are used as the mirror reflectors and single and a multilayer antireflection coating is used at the silicon/air interface. The cavity spacing is electrostatically driven.
{"title":"Micromachined mid-infrared tunable Fabry-Perot filter","authors":"N. Neumann, K. Hiller, S. Kurth","doi":"10.1109/SENSOR.2005.1496626","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496626","url":null,"abstract":"This contribution deals with the design, fabrication and test of a micromachined first order Fabry-Perot (FP) filter that is intended for use in advanced infrared gas analysis. To achieve optimal interference conditions within an FP filter, the roughness and the curvature of its reflectors must be minimized, while the parallelism between reflectors is maintained. The approach here minimizes mirror curvature by using 300 /spl mu/m thick mirror carriers for the coplanar fixed and movable reflectors of the FP filter. Dielectric reflectance stacks consisting of deposited alternating layers of silicon dioxide (SiO/sub 2/) and polycrystalline silicon (Si) are used as the mirror reflectors and single and a multilayer antireflection coating is used at the silicon/air interface. The cavity spacing is electrostatically driven.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"276 1","pages":"1010-1013 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82252404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497324
M. Sudou, H. Takao, K. Sawada, M. Ishida
This paper presents a new wafer-level integration technology of discrete surface mount devices (SMDs) on silicon-wafers. It is automatic parts alignment on silicon-wafer by means of gravity force and vibration. After silicon IC process, deep holes were formed by deep reactive ion etching (DRIE) process to arrange SMDs. Then a non-conductivity adhesive was spin coated and removed it on the silicon-wafer surface leaving the adhesive at the bottom of the holes. We fixed the silicon-wafer diagonally to a vibration generator and distribute SMDs on it. By vibrating the silicon-wafer, SMDs go down to the lower side occupying the holes automatically. As a result, two different sizes of SMDs were successfully mounted into every hole on silicon wafer. This technology is promising to integrate various discrete devices on integrated devices with batch process-like productivity.
提出了一种新的硅片上离散表面贴装器件的晶圆级集成技术。它是一种利用重力和振动在硅片上自动对中零件的装置。硅集成电路工艺完成后，采用深度反应离子刻蚀(deep reactive ion etching, DRIE)工艺形成深孔排列smd。然后在硅片表面涂上非导电性胶粘剂，并将其去除，将胶粘剂留在孔的底部。我们将硅片斜固定在振动发生器上，并在其上分布smd。通过振动硅片，smd自动向下移动，占据孔位。结果表明，在硅片上的每个孔中都成功地安装了两种不同尺寸的smd。该技术有望将各种分立器件集成到集成器件上，具有批处理式生产效率。
{"title":"Wafer-level integration technology of surface mount devices using automatic parts alignment technology with vibration","authors":"M. Sudou, H. Takao, K. Sawada, M. Ishida","doi":"10.1109/SENSOR.2005.1497324","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497324","url":null,"abstract":"This paper presents a new wafer-level integration technology of discrete surface mount devices (SMDs) on silicon-wafers. It is automatic parts alignment on silicon-wafer by means of gravity force and vibration. After silicon IC process, deep holes were formed by deep reactive ion etching (DRIE) process to arrange SMDs. Then a non-conductivity adhesive was spin coated and removed it on the silicon-wafer surface leaving the adhesive at the bottom of the holes. We fixed the silicon-wafer diagonally to a vibration generator and distribute SMDs on it. By vibrating the silicon-wafer, SMDs go down to the lower side occupying the holes automatically. As a result, two different sizes of SMDs were successfully mounted into every hole on silicon wafer. This technology is promising to integrate various discrete devices on integrated devices with batch process-like productivity.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"37 1","pages":"1322-1325 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81475418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496625
Y. Wang, B. Potter, M. Sutton, R. Supino, J. Talghader
This paper covers the design, fabrication, and testing of a step-wise tunable long-wavelength infrared filter. The design uses a modified type of microbolometer to filter infrared light in the 7-10 micrometer wavelength range. Fabrication of the device is accomplished using standard microelectronic and microelectromechanical systems (MEMS) fabrication techniques. Germanium and zinc sulfide are used as optical layers for good reflectivity in the desired infrared range. Testing of the device shows that it filters light in three absorption bands in the specified wavelength range. The tuning of the device is found to be step-wise in response to electrostatic actuation using voltages up to 100 volts.
{"title":"Step-wise tunable microbolometer long-wavelength infrared filter","authors":"Y. Wang, B. Potter, M. Sutton, R. Supino, J. Talghader","doi":"10.1109/SENSOR.2005.1496625","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496625","url":null,"abstract":"This paper covers the design, fabrication, and testing of a step-wise tunable long-wavelength infrared filter. The design uses a modified type of microbolometer to filter infrared light in the 7-10 micrometer wavelength range. Fabrication of the device is accomplished using standard microelectronic and microelectromechanical systems (MEMS) fabrication techniques. Germanium and zinc sulfide are used as optical layers for good reflectivity in the desired infrared range. Testing of the device shows that it filters light in three absorption bands in the specified wavelength range. The tuning of the device is found to be step-wise in response to electrostatic actuation using voltages up to 100 volts.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"446 1","pages":"1006-1009 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82899906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497403
K. Koo, Hum Chung, Youngsuk Yu, Jong-mo Seo, Jaehong Park, Jung-Min Lim, S. Paik, A. Lee, Sungil Park, H. Choi, Myoung-Jun Jeong, D. Cho
This paper presents a novel 3D 8/spl times/8 multi-electrode array for artificial retina application. Each electrode features a triangular pyramidal structure that composed of one (111) plane and two vertical planes. The coneangle between the (111) plane and the vertical plane is 19.5/spl deg/. The sharp triangular pyramidal structure makes the minimal invasive penetration for the inner limiting membrane. The characteristic measurement of impedance magnitude and the phase shift of a single electrode are 1.19 M/spl Omega/ and 80.8/spl deg/ at 1 kHz, respectively.
{"title":"Fabrication of a novel 3D 8/spl times/8 electrode array for artificial retina","authors":"K. Koo, Hum Chung, Youngsuk Yu, Jong-mo Seo, Jaehong Park, Jung-Min Lim, S. Paik, A. Lee, Sungil Park, H. Choi, Myoung-Jun Jeong, D. Cho","doi":"10.1109/SENSOR.2005.1497403","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497403","url":null,"abstract":"This paper presents a novel 3D 8/spl times/8 multi-electrode array for artificial retina application. Each electrode features a triangular pyramidal structure that composed of one (111) plane and two vertical planes. The coneangle between the (111) plane and the vertical plane is 19.5/spl deg/. The sharp triangular pyramidal structure makes the minimal invasive penetration for the inner limiting membrane. The characteristic measurement of impedance magnitude and the phase shift of a single electrode are 1.19 M/spl Omega/ and 80.8/spl deg/ at 1 kHz, respectively.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"32 1","pages":"1640-1643 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89608508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497338
A. Randles, S. Tanaka, B. Pokines, M. Esashi
A lithium niobate actuator has been successfully fabricated using bulk-micromachining with a metal mask. The method reported here uses a chrome/gold mask and then etching on the lithium niobate is carried out in hydrofluoric acid at 80 /spl deg/C. This results in an etch rate of 50 /spl mu/m/h and an undercut of the 5.5 /spl mu/m/h. The fabricated actuator used the deep trenches etched into the lithium niobate, and nickel electrodes were electroplated into these trenches. The actuator was tested but the deflection was as small as 4.9 /spl times/ 10/sup -4/ /spl mu/m/V. This is because lithium niobate was not properly re-poled, so that piezoelectric deformation in the lithium niobate canceled out.
{"title":"Bulk-micromachined lithium niobate sensor and actuator for harsh environments","authors":"A. Randles, S. Tanaka, B. Pokines, M. Esashi","doi":"10.1109/SENSOR.2005.1497338","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497338","url":null,"abstract":"A lithium niobate actuator has been successfully fabricated using bulk-micromachining with a metal mask. The method reported here uses a chrome/gold mask and then etching on the lithium niobate is carried out in hydrofluoric acid at 80 /spl deg/C. This results in an etch rate of 50 /spl mu/m/h and an undercut of the 5.5 /spl mu/m/h. The fabricated actuator used the deep trenches etched into the lithium niobate, and nickel electrodes were electroplated into these trenches. The actuator was tested but the deflection was as small as 4.9 /spl times/ 10/sup -4/ /spl mu/m/V. This is because lithium niobate was not properly re-poled, so that piezoelectric deformation in the lithium niobate canceled out.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"53 1","pages":"1380-1383 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89744738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496424
M. D. De Volder, J. Peirs, D. Reynaerts, J. Coosemans, R. Puers, O. Smal, B. Raucent
In order to improve the power density of microactuators, recent research focuses on the applicability of fluidic power at microscale. One of the reasons that hydraulic actuators are still uncommon in micro system technology is due to the difficulty of fabricating powerful microseals. This paper presents two seal technologies that are suitable for sealing small-scale hydraulic actuators. Measurements on prototype actuators show that force densities up to 0.45 N/mm/sup 2/ (0.025 N/mm/sup 3/) and work densities up to 0.2 mJ/mm/sup 3/ can easily be achieved with the developed seal technology. These characteristics can still be improved as the maximum driving pressures of the actuators have not yet been determined.
{"title":"Comparison of two seal technologies for hydraulic microactuators","authors":"M. D. De Volder, J. Peirs, D. Reynaerts, J. Coosemans, R. Puers, O. Smal, B. Raucent","doi":"10.1109/SENSOR.2005.1496424","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496424","url":null,"abstract":"In order to improve the power density of microactuators, recent research focuses on the applicability of fluidic power at microscale. One of the reasons that hydraulic actuators are still uncommon in micro system technology is due to the difficulty of fabricating powerful microseals. This paper presents two seal technologies that are suitable for sealing small-scale hydraulic actuators. Measurements on prototype actuators show that force densities up to 0.45 N/mm/sup 2/ (0.025 N/mm/sup 3/) and work densities up to 0.2 mJ/mm/sup 3/ can easily be achieved with the developed seal technology. These characteristics can still be improved as the maximum driving pressures of the actuators have not yet been determined.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"41 1","pages":"333-336 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89419688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497501
K. Ito, Y. Mita, M. Kubota, F. Marty, T. Bourouina, T. Shibata
An in-device electrical measurement method of critical dimensions (CD) width in MEMS devices is proposed. It alternates conventional critical dimension measurements by image taking apparatus, such as CD-SEMs. Integration of electrical critical dimension measurement test structures into MEMS devices enables us to measure critical dimension width of the working device. A method to remove the disturbance of the repeatability by joule heating, which is inevitable in electrical measurements, is proposed. By grace of the joule-heating disturbance elimination method, an extremely high repeatability (50nm for 5/spl mu/m silicon structure, 1nm for 1.5/spl mu/m aluminum structure) was obtained by a simple measurement using only multimeters.
{"title":"Electrical critical dimension measurement method by integration of test structure into MEMS devices","authors":"K. Ito, Y. Mita, M. Kubota, F. Marty, T. Bourouina, T. Shibata","doi":"10.1109/SENSOR.2005.1497501","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497501","url":null,"abstract":"An in-device electrical measurement method of critical dimensions (CD) width in MEMS devices is proposed. It alternates conventional critical dimension measurements by image taking apparatus, such as CD-SEMs. Integration of electrical critical dimension measurement test structures into MEMS devices enables us to measure critical dimension width of the working device. A method to remove the disturbance of the repeatability by joule heating, which is inevitable in electrical measurements, is proposed. By grace of the joule-heating disturbance elimination method, an extremely high repeatability (50nm for 5/spl mu/m silicon structure, 1nm for 1.5/spl mu/m aluminum structure) was obtained by a simple measurement using only multimeters.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"284 1","pages":"2031-2034 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86742179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496548
O. Millet, P. Muller, O. Blanrue, B. Legrand, D. Collard, L. Buchaillot
The paper deals with the investigation of microstructure failures due to storage between two steps of the fabrication process, and with the presentation of an innovative process avoiding these failures. Applications in fabrication process, corrective processes on released structures and reverse engineering are thanks to nanoindentation on mobile parts.
{"title":"Reliability of non-released microstructures: failure analysis and innovative solution process","authors":"O. Millet, P. Muller, O. Blanrue, B. Legrand, D. Collard, L. Buchaillot","doi":"10.1109/SENSOR.2005.1496548","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496548","url":null,"abstract":"The paper deals with the investigation of microstructure failures due to storage between two steps of the fabrication process, and with the presentation of an innovative process avoiding these failures. Applications in fabrication process, corrective processes on released structures and reverse engineering are thanks to nanoindentation on mobile parts.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"8 1","pages":"840-842 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87609541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497336
S. Moon, Y. Choi, S.S. Lee
In this paper, a nickel electroplating process has been developed for the micromachined biopsy tool useful for the capsule type endoscope. Long shaft and sharp tip biopsy tool is easily fabricated using thick PR (SU8) mold by one mask lithography process. These micro scale biopsy tools are readily integrated with conventional forceps system or capsule type endoscope. The characteristics of various biopsy tool design features including tip taper angle, tool geometries, and cutting knife number were studied for the tissue extraction from an mice intestine. The fabricated biopsy tools had proper strength and sharpness for tissue extraction and the tools extracted sufficient amount of tissues for a clinical test.
{"title":"A micromachined biopsy tool for a capsule type endoscope","authors":"S. Moon, Y. Choi, S.S. Lee","doi":"10.1109/SENSOR.2005.1497336","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497336","url":null,"abstract":"In this paper, a nickel electroplating process has been developed for the micromachined biopsy tool useful for the capsule type endoscope. Long shaft and sharp tip biopsy tool is easily fabricated using thick PR (SU8) mold by one mask lithography process. These micro scale biopsy tools are readily integrated with conventional forceps system or capsule type endoscope. The characteristics of various biopsy tool design features including tip taper angle, tool geometries, and cutting knife number were studied for the tissue extraction from an mice intestine. The fabricated biopsy tools had proper strength and sharpness for tissue extraction and the tools extracted sufficient amount of tissues for a clinical test.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"48 1","pages":"1371-1374 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87897983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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