Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909516
Hatem Ghaleb, D. Fritsche, M. El-Shennawy, Paul Stärke, C. Carta, F. Ellinger
This paper reports on the design and layout of a 180-GHz down-conversion mixer in a 130nm SiGe BiCMOS technology. The mixer has a single-balanced passive core, with diode-connected npn heterojunction bipolar transistors as mixing devices, a common-collector output buffer, a broadband rat-race coupler, and an LO driver for measurement. The mixer has a minimum conversion loss of 6 dB over a broad LO-RF bandwidth of 50 GHz, and an input-referred 1-dB compression point of -7 dBm. It requires only -30 dBm of LO power with the integrated LO driver. The circuit has a dc power consumption of 0.1 mW for the mixer and 2.7 mW for the output buffer. The circuit occupies a total area of 0.88 mm2.
{"title":"A 180-GHz Passive Integrated SiGe Down-Conversion Mixer with Low Loss and a Broadband Rat-Race Coupler Design","authors":"Hatem Ghaleb, D. Fritsche, M. El-Shennawy, Paul Stärke, C. Carta, F. Ellinger","doi":"10.23919/EuMIC.2019.8909516","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909516","url":null,"abstract":"This paper reports on the design and layout of a 180-GHz down-conversion mixer in a 130nm SiGe BiCMOS technology. The mixer has a single-balanced passive core, with diode-connected npn heterojunction bipolar transistors as mixing devices, a common-collector output buffer, a broadband rat-race coupler, and an LO driver for measurement. The mixer has a minimum conversion loss of 6 dB over a broad LO-RF bandwidth of 50 GHz, and an input-referred 1-dB compression point of -7 dBm. It requires only -30 dBm of LO power with the integrated LO driver. The circuit has a dc power consumption of 0.1 mW for the mixer and 2.7 mW for the output buffer. The circuit occupies a total area of 0.88 mm2.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123898430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909414
Y. Lin, M. Lee, M. Tsai, C. Wang, J. Yao, T. J. Huang, H. Hsu, J. Maa, E. Chang
In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise Figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.
{"title":"Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs","authors":"Y. Lin, M. Lee, M. Tsai, C. Wang, J. Yao, T. J. Huang, H. Hsu, J. Maa, E. Chang","doi":"10.23919/EuMIC.2019.8909414","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909414","url":null,"abstract":"In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise Figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"105 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123390433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909553
R. Ma, Z. Tibenszky, M. Kreissig, F. Ellinger
This work presents the design and implementation of a fully-differential 6th-order intermediate frequency (IF) bandpass filter (BPF) in 45 nm CMOS RFSOI. Its application targets are wake-up receivers (WuRX) that employ aggressive duty cycling. The fabricated filter with all bias circuits consumes a current of only 0.41mA from a 1V supply. Its center frequency is adaptive between 70 and 120 MHz, and the 3 dB-bandwidth is 20MHz. The BPF can settle within 40 ns. It occupies an area of 0.03mm2. To the authors’ best knowledge, this circuit provides the lowest DC-power, the lowest DC-power per pole, the shortest settling time and the fewest area for IF BPFs reported to date.
{"title":"A 0.41mW Band-Tunable 6th-Order IF Filter with 40 ns Settling Time in 45 nm CMOS RFSOI","authors":"R. Ma, Z. Tibenszky, M. Kreissig, F. Ellinger","doi":"10.23919/EuMIC.2019.8909553","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909553","url":null,"abstract":"This work presents the design and implementation of a fully-differential 6th-order intermediate frequency (IF) bandpass filter (BPF) in 45 nm CMOS RFSOI. Its application targets are wake-up receivers (WuRX) that employ aggressive duty cycling. The fabricated filter with all bias circuits consumes a current of only 0.41mA from a 1V supply. Its center frequency is adaptive between 70 and 120 MHz, and the 3 dB-bandwidth is 20MHz. The BPF can settle within 40 ns. It occupies an area of 0.03mm2. To the authors’ best knowledge, this circuit provides the lowest DC-power, the lowest DC-power per pole, the shortest settling time and the fewest area for IF BPFs reported to date.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127307941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909495
G. Nikandish, R. Staszewski, A. Zhu
In this paper, we present a design technique for broadband harmonic-tuned monolithic microwave integrated circuit (MMIC) power amplifiers (PAs). A multi-resonance harmonic matching network is proposed for the continuous class -F mode operation, featuring low loss and compact chip area for integrated PA realization. A design procedure is developed for this network, considering low quality factor and electromigration current density limitation of on-chip inductors. A proof-of-concept GaN MMIC PA, implemented in a 0.25-$mu$ m GaN-on-SiC technology, provides 33. 9-36.ldBm output power and 38-48% power-added efficiency (PAE) in the frequency band 4-6GHz. For a 64-QAM signal with 100 MHz modulation bandwidth and 8 dB peak-to-average power ratio (PAPR), at 5 GHz, the average output power of 30.2 dBm and average PAE of 32% are achieved, while the error vector magnitude (EVM) is -32dB.
{"title":"A Broadband Continuous Class-FGaN MMIC PA Using Multi-Resonance Matching Network","authors":"G. Nikandish, R. Staszewski, A. Zhu","doi":"10.23919/EuMIC.2019.8909495","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909495","url":null,"abstract":"In this paper, we present a design technique for broadband harmonic-tuned monolithic microwave integrated circuit (MMIC) power amplifiers (PAs). A multi-resonance harmonic matching network is proposed for the continuous class -F mode operation, featuring low loss and compact chip area for integrated PA realization. A design procedure is developed for this network, considering low quality factor and electromigration current density limitation of on-chip inductors. A proof-of-concept GaN MMIC PA, implemented in a 0.25-$mu$ m GaN-on-SiC technology, provides 33. 9-36.ldBm output power and 38-48% power-added efficiency (PAE) in the frequency band 4-6GHz. For a 64-QAM signal with 100 MHz modulation bandwidth and 8 dB peak-to-average power ratio (PAPR), at 5 GHz, the average output power of 30.2 dBm and average PAE of 32% are achieved, while the error vector magnitude (EVM) is -32dB.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134063287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909634
A. Dasgupta, Arij Battikh, G. Neveux, D. Barataud, C. Chambon
A novel extraction of a non-linear circuit model of dual-rank Track and Hold (THA) amplifier is presented. The non-linear model is based on the Spurious Free dynamic Range (SFDR) measurements versus input frequency of commercially available Teledyne RTH090 THA with an analog bandwidth of 28 GHz using Harmonic Balance (HB) algorithm. A Non-Linear (NL) conductance switch model of the THA corrected with Lanczos weighting factors has been first theoretically analyzed and then extracted. To our knowledge, it is the first time that such a non-linear THA circuit model has been simulated. The simulations have been performed from S-Band up to Ka-Band frequencies. The measurement results and the simulations are compared at 0.3$V_{p-p}$ input signal and a differential clock signal of 0.8$V_{p-p}$ with sampling rates varying between 2-4 GSps. The HB simulations of the non-linear model fits well with the measurement results.
{"title":"Non-linear Modeling and Harmonic Balance Simulations of Track and Hold Amplifier","authors":"A. Dasgupta, Arij Battikh, G. Neveux, D. Barataud, C. Chambon","doi":"10.23919/EuMIC.2019.8909634","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909634","url":null,"abstract":"A novel extraction of a non-linear circuit model of dual-rank Track and Hold (THA) amplifier is presented. The non-linear model is based on the Spurious Free dynamic Range (SFDR) measurements versus input frequency of commercially available Teledyne RTH090 THA with an analog bandwidth of 28 GHz using Harmonic Balance (HB) algorithm. A Non-Linear (NL) conductance switch model of the THA corrected with Lanczos weighting factors has been first theoretically analyzed and then extracted. To our knowledge, it is the first time that such a non-linear THA circuit model has been simulated. The simulations have been performed from S-Band up to Ka-Band frequencies. The measurement results and the simulations are compared at 0.3$V_{p-p}$ input signal and a differential clock signal of 0.8$V_{p-p}$ with sampling rates varying between 2-4 GSps. The HB simulations of the non-linear model fits well with the measurement results.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129296506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909509
L. Yi, K. Iwamoto, Takumi Yamamoto, F. Ayano, Yihan Li, A. Rolland, N. Kuse, M. Fermann, T. Nagatsuma
The implementation of advanced multi-level modulation schemes such as quadrature phase-shift keying (QPSK) in contrast to the conventional on-off keying (OOK) is crucial to further boost the terahertz (THz) communications speed. Thereby, the phase noise reduction in the THz range is one of the key goals that need to be urgently achieved. In this paper, a low phase-noise photonic source based on the stimulated Brillouin scattering (SBS) phenomenon is first introduced in a 300-GHzband QPSK wireless communication link. The highest data rate at forward-error-correction limited condition was 15 Gbaud with the SBS source, and transmission characteristics are evaluated and compared with conventional optical frequency comb (OFCG)based sources at 5 Gbaud. Our Brillouin-based photonic source has been proven to offer better performances than the OFCG-based one with respect to the phase noise, the optical carrier to noise ratio, and the bit error rate in communications.
{"title":"300-GHz-band wireless communication using a low phase noise photonic source","authors":"L. Yi, K. Iwamoto, Takumi Yamamoto, F. Ayano, Yihan Li, A. Rolland, N. Kuse, M. Fermann, T. Nagatsuma","doi":"10.23919/EuMIC.2019.8909509","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909509","url":null,"abstract":"The implementation of advanced multi-level modulation schemes such as quadrature phase-shift keying (QPSK) in contrast to the conventional on-off keying (OOK) is crucial to further boost the terahertz (THz) communications speed. Thereby, the phase noise reduction in the THz range is one of the key goals that need to be urgently achieved. In this paper, a low phase-noise photonic source based on the stimulated Brillouin scattering (SBS) phenomenon is first introduced in a 300-GHzband QPSK wireless communication link. The highest data rate at forward-error-correction limited condition was 15 Gbaud with the SBS source, and transmission characteristics are evaluated and compared with conventional optical frequency comb (OFCG)based sources at 5 Gbaud. Our Brillouin-based photonic source has been proven to offer better performances than the OFCG-based one with respect to the phase noise, the optical carrier to noise ratio, and the bit error rate in communications.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130822885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909438
M. Bouslama, R. Sommet, J. Nallatamby
In this paper, we compare to different technologies (A and B) of 0.15-$mu$m ultra-short gate length GaN HEMT devices using drain lag and gate lag measurements. A low frequency (LF) S-parameters measurements was also performed for different chuck temperatures ranging from 25circC and 100circC. The leakage current which was measured before and after S-parameters measurements for both technologies was lower than 100 $mu$A/mm. In addition, a complete study has been performed to determine the exact location of the traps existing in technology A using TCAD based 2D physics-based simulation. Thus, the model parameters have been tuned to fit the dc simulation with the measured I-V characteristics at 25circC. This allows to estimate the concentration of traps (NT) present in the device at 25 °c. Knowing the trap energy level extracted using LF S-parameters measurements, TCAD physics-based simulations are performed at various temperatures in order to extract the low frequency Y22 admittance parameter. For technology A, TCAD simulation demonstrate that the concentration of traps increases when the temperature increases. Simulation results are in good agreements with the measurements and assume that the location of traps was in the buffer region, with an activation energy Ea=0.47eV and cross section around $6times 10^{-16}cm^{2}$.
{"title":"Characterization of Different Technologies of GaN HEMTs of 0,15 μm Ultra-Short Gate Length: Identification of Traps Using TCAD Based 2D Physics-based Simulation","authors":"M. Bouslama, R. Sommet, J. Nallatamby","doi":"10.23919/EuMIC.2019.8909438","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909438","url":null,"abstract":"In this paper, we compare to different technologies (A and B) of 0.15-$mu$m ultra-short gate length GaN HEMT devices using drain lag and gate lag measurements. A low frequency (LF) S-parameters measurements was also performed for different chuck temperatures ranging from 25circC and 100circC. The leakage current which was measured before and after S-parameters measurements for both technologies was lower than 100 $mu$A/mm. In addition, a complete study has been performed to determine the exact location of the traps existing in technology A using TCAD based 2D physics-based simulation. Thus, the model parameters have been tuned to fit the dc simulation with the measured I-V characteristics at 25circC. This allows to estimate the concentration of traps (NT) present in the device at 25 °c. Knowing the trap energy level extracted using LF S-parameters measurements, TCAD physics-based simulations are performed at various temperatures in order to extract the low frequency Y22 admittance parameter. For technology A, TCAD simulation demonstrate that the concentration of traps increases when the temperature increases. Simulation results are in good agreements with the measurements and assume that the location of traps was in the buffer region, with an activation energy Ea=0.47eV and cross section around $6times 10^{-16}cm^{2}$.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131214632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909418
S. Chakraborty, Leigh E. Milner, S. Mahon, A. Parker, M. Heimlich
A self-biased balanced frequency doubler is presented in gallium arsenide (GaAs) with more than 38 dB fundamental suppression and broad bandwidth from 22 to 40 GHz at its output. The combination of both large bandwidth and excellent harmonic rejection was achieved by applying a transformer balun with a high degree of symmetry and minimal capacitive coupling. The balun alone has a gain and phase imbalance of less than 0.3 dB and 0.7° respectively from 2 to 25 GHz. The conversion gain of the doubler with the balun is -2 to -5 dB across the output frequency range. The highest output power is approximately 8 dBm between 18 and 20 GHz, with 10 dBm input. This work features the highest fundamental rejection across the band compared to the previously reported broadband GaAs doublers, enabled by the excellent balance of the balun.
{"title":"A GaAs Frequency Doubler with 38 dB fundamental rejection from 22 to 40 GHz using a Transformer Balun","authors":"S. Chakraborty, Leigh E. Milner, S. Mahon, A. Parker, M. Heimlich","doi":"10.23919/EuMIC.2019.8909418","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909418","url":null,"abstract":"A self-biased balanced frequency doubler is presented in gallium arsenide (GaAs) with more than 38 dB fundamental suppression and broad bandwidth from 22 to 40 GHz at its output. The combination of both large bandwidth and excellent harmonic rejection was achieved by applying a transformer balun with a high degree of symmetry and minimal capacitive coupling. The balun alone has a gain and phase imbalance of less than 0.3 dB and 0.7° respectively from 2 to 25 GHz. The conversion gain of the doubler with the balun is -2 to -5 dB across the output frequency range. The highest output power is approximately 8 dBm between 18 and 20 GHz, with 10 dBm input. This work features the highest fundamental rejection across the band compared to the previously reported broadband GaAs doublers, enabled by the excellent balance of the balun.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124302606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909572
R. Grootjans, R. Dekker, R. Oldenbeuving, J. Epping, R. Timens, Rick Heuvink, E. Klein, A. Leinse, P. V. van Dijk, R. Heideman, C. Roeloffzen, C. Taddei, M. Hoekman, L. Wevers, I. Visscher, P. Kapteijn, D. Geskus, A. Alippi
In this paper a microwave photonic broadband true time delay (TTD) continuously tuneable beamformer module for phased array antenna applications is presented. This microwave photonics beamformer is based on the hybrid integration of Indium Phosphide and Silicon Nitride chips. This paper features results from the latest transmit microwave photonic beamformer based on a completely integrated photonic assembly interface.
{"title":"Broadband Continuously Tuneable Delay Microwave Photonic Beamformer for Phased Array Antennas","authors":"R. Grootjans, R. Dekker, R. Oldenbeuving, J. Epping, R. Timens, Rick Heuvink, E. Klein, A. Leinse, P. V. van Dijk, R. Heideman, C. Roeloffzen, C. Taddei, M. Hoekman, L. Wevers, I. Visscher, P. Kapteijn, D. Geskus, A. Alippi","doi":"10.23919/EuMIC.2019.8909572","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909572","url":null,"abstract":"In this paper a microwave photonic broadband true time delay (TTD) continuously tuneable beamformer module for phased array antenna applications is presented. This microwave photonics beamformer is based on the hybrid integration of Indium Phosphide and Silicon Nitride chips. This paper features results from the latest transmit microwave photonic beamformer based on a completely integrated photonic assembly interface.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"273 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115923617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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