Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909415
M. Hossain, N. Weimann, M. Brahem, O. Ostinelli, C. Bolognesi, W. Heinrich, V. Krozer
This paper presents a 0.5 THz oscillator, realized using a transferred-substrate (TS) 0.3 μm InP DHBT process. It delivers -11 dBm peak output power. The DC consumption is only 15 mW from a 1.6 volts power supply, which corresponds to 0.5 % peak DC-to-RF efficiency. The oscillator exhibits the highest efficiency of a millimeter-wave frequency source beyond 400 GHz reported to date. The core area of the circuit is only 0.6 x 0.6 mm2.
{"title":"A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT","authors":"M. Hossain, N. Weimann, M. Brahem, O. Ostinelli, C. Bolognesi, W. Heinrich, V. Krozer","doi":"10.23919/EuMIC.2019.8909415","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909415","url":null,"abstract":"This paper presents a 0.5 THz oscillator, realized using a transferred-substrate (TS) 0.3 μm InP DHBT process. It delivers -11 dBm peak output power. The DC consumption is only 15 mW from a 1.6 volts power supply, which corresponds to 0.5 % peak DC-to-RF efficiency. The oscillator exhibits the highest efficiency of a millimeter-wave frequency source beyond 400 GHz reported to date. The core area of the circuit is only 0.6 x 0.6 mm2.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126552221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909514
M. Ben-Sassi, G. Neveux, D. Barataud
This paper describes, for the first time to our knowledge, a comparison of Pulse to Pulse (P2P) performances of an AlGaN/GaN HEMT obtained, experimentally on the one hand thanks to an on-wafer fully calibrated characterization system and on the other hand, from a Harmonic Balance (HB) simulation of a foundry-based model of the transistor. The measurements and the HB simulations allow the simultaneous and coherent extraction of, on the one hand, the complex envelopes of the microwave (RF) voltages and currents and, on the other hand, the Low Frequency (LF) drain current generated by the non-linearities of the measured/simulated components. The complex voltage and current envelopes at both ports of the Devices Under Test (DUT) and the LF drain voltage and current have been simultaneously measured/simulated with a periodic irregular radar burst excitations composed of ultra-short transient pulses. The main originality of this work lies in the fact that the generated RF time-domain waveforms used for the measured and simulated excitation of the transistors have been corrected to strongly reduce the emergence of the Gibbs phenomenon [1]. Lanczos/Fejér series have already been implemented in general-purpose simulator but, to our knowledge, this is the first time that they are directly used to generate a useful excitation signal in a microwave characterization system and in a HB simulation.
{"title":"Comparison of Harmonic Balance Simulated and Measured Ultra-short Low Frequency/Microwave Transients in Pulse to Pulse Characterization of GaN transistors","authors":"M. Ben-Sassi, G. Neveux, D. Barataud","doi":"10.23919/EuMIC.2019.8909514","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909514","url":null,"abstract":"This paper describes, for the first time to our knowledge, a comparison of Pulse to Pulse (P2P) performances of an AlGaN/GaN HEMT obtained, experimentally on the one hand thanks to an on-wafer fully calibrated characterization system and on the other hand, from a Harmonic Balance (HB) simulation of a foundry-based model of the transistor. The measurements and the HB simulations allow the simultaneous and coherent extraction of, on the one hand, the complex envelopes of the microwave (RF) voltages and currents and, on the other hand, the Low Frequency (LF) drain current generated by the non-linearities of the measured/simulated components. The complex voltage and current envelopes at both ports of the Devices Under Test (DUT) and the LF drain voltage and current have been simultaneously measured/simulated with a periodic irregular radar burst excitations composed of ultra-short transient pulses. The main originality of this work lies in the fact that the generated RF time-domain waveforms used for the measured and simulated excitation of the transistors have been corrected to strongly reduce the emergence of the Gibbs phenomenon [1]. Lanczos/Fejér series have already been implemented in general-purpose simulator but, to our knowledge, this is the first time that they are directly used to generate a useful excitation signal in a microwave characterization system and in a HB simulation.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127248439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909580
R. B. Yishay, O. Katz, B. Sheinman, D. Elad
This paper discusses the design and implementation of a 57-66 GHz bidirectional phased-array frontend in SiGe BiCMOS for time-duplexed transceivers. The TX path includes PA, power detector, variable attenuator and phase inverter. A fine-tuned 0-180° passive phase shifter is shared with the RX path which integrates also LNA, variable attenuators and phase inverter (PI). In RX mode, the front-end achieves 22 dB, gain bandwidth of 14 GHz and 6.4 dB minimum NF in the high-gain mode. In TX mode, the front-end achieves 12 dBm saturated output power, 9.7 dBm output-referred 1dB compression point, 24 dB gain, and 8 GHz bandwidth. The phase shifters achieve full 360° phase span with 6-bit phase resolution, 2.3° rms phase error and 0.2 dB rms gain error at 60 GHz. The IC occupies area of 3.3 mm2 (including pads) and consumes 102 mW / 256 mW in RX/TX (at P1dB), respectively.
{"title":"High Performance 60 GHz Bidirectional Phased Array Front End in SiGe BiCMOS","authors":"R. B. Yishay, O. Katz, B. Sheinman, D. Elad","doi":"10.23919/EuMIC.2019.8909580","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909580","url":null,"abstract":"This paper discusses the design and implementation of a 57-66 GHz bidirectional phased-array frontend in SiGe BiCMOS for time-duplexed transceivers. The TX path includes PA, power detector, variable attenuator and phase inverter. A fine-tuned 0-180° passive phase shifter is shared with the RX path which integrates also LNA, variable attenuators and phase inverter (PI). In RX mode, the front-end achieves 22 dB, gain bandwidth of 14 GHz and 6.4 dB minimum NF in the high-gain mode. In TX mode, the front-end achieves 12 dBm saturated output power, 9.7 dBm output-referred 1dB compression point, 24 dB gain, and 8 GHz bandwidth. The phase shifters achieve full 360° phase span with 6-bit phase resolution, 2.3° rms phase error and 0.2 dB rms gain error at 60 GHz. The IC occupies area of 3.3 mm2 (including pads) and consumes 102 mW / 256 mW in RX/TX (at P1dB), respectively.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"402 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127413942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909440
Mengqi Cui, Z. Tibenszky, D. Fritsche, C. Carta, F. Ellinger
This paper presents a millimeter wave power amplifier (PA) implemented in 22nm FD-SOI technology with only 0.8V transistors. The single stage pseudo-differential 3-level stacked PA operating between 55GHz and 62GHz is optimized for output power and area consumption. The input and output matching networks utilize transformer baluns to minimize loss and size. An output power of 15dBm and a power added efficiency (PAE) of 11.8 % at 55GHz are measured. The PA is fabricated in an area of only 0.055mm2 without pads. Compared against the state of the art millimeter-wave PAs in CMOS technologies, the presented design has the lowest supply voltage per transistor and still the second highest output power over area value.
{"title":"An Area Efficient 48 - 62 GHz Stacked Power Amplifier in 22nm FD-SOI","authors":"Mengqi Cui, Z. Tibenszky, D. Fritsche, C. Carta, F. Ellinger","doi":"10.23919/EuMIC.2019.8909440","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909440","url":null,"abstract":"This paper presents a millimeter wave power amplifier (PA) implemented in 22nm FD-SOI technology with only 0.8V transistors. The single stage pseudo-differential 3-level stacked PA operating between 55GHz and 62GHz is optimized for output power and area consumption. The input and output matching networks utilize transformer baluns to minimize loss and size. An output power of 15dBm and a power added efficiency (PAE) of 11.8 % at 55GHz are measured. The PA is fabricated in an area of only 0.055mm2 without pads. Compared against the state of the art millimeter-wave PAs in CMOS technologies, the presented design has the lowest supply voltage per transistor and still the second highest output power over area value.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133100669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909614
Penghui Zheng, Shiyong Zhang, Jianxing Xu, Rong Wang, X. Tong
A 23-31 GHz Monolithic Microwave Integrated Circuit (MMIC) low-noise Amplifier (LNA) based on AlGaN/GaN on Si technology from OMMIC is presented in this paper. Common-source topology with inductive source feedback is utilized for simultaneous noise and input match. Measurement results show that the LNA has a gain of more than 22 dB while achieving an average noise Figure (NF) of 1.1 dB over the designed band and the minimum value of 0.93 dB at 27 GHz. The three stage topology achieves high linearity, providing the 1-dB compression point output power (P}$_{1dB}$) of 23 dBm and a Saturated Output Power (Psat) of $sim28$ dBm. The robustness of this LNA was tested with 1 Watt continuous-wave input power at 27 GHz. The LNA survived after stress without obvious degradation. Compared with the traditional GaAs LNA, the GaN LNA has competitive NF and much higher linearity.
{"title":"A 23-31 GHz Robust Low-Noise Amplifier with 1.1 dB Noise Figure and 28 dBm Psat","authors":"Penghui Zheng, Shiyong Zhang, Jianxing Xu, Rong Wang, X. Tong","doi":"10.23919/EuMIC.2019.8909614","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909614","url":null,"abstract":"A 23-31 GHz Monolithic Microwave Integrated Circuit (MMIC) low-noise Amplifier (LNA) based on AlGaN/GaN on Si technology from OMMIC is presented in this paper. Common-source topology with inductive source feedback is utilized for simultaneous noise and input match. Measurement results show that the LNA has a gain of more than 22 dB while achieving an average noise Figure (NF) of 1.1 dB over the designed band and the minimum value of 0.93 dB at 27 GHz. The three stage topology achieves high linearity, providing the 1-dB compression point output power (P}$_{1dB}$) of 23 dBm and a Saturated Output Power (Psat) of $sim28$ dBm. The robustness of this LNA was tested with 1 Watt continuous-wave input power at 27 GHz. The LNA survived after stress without obvious degradation. Compared with the traditional GaAs LNA, the GaN LNA has competitive NF and much higher linearity.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117301946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909564
Florian Voineau, B. Martineau, Mathilde Sié, A. Ghiotto, E. Kerhervé
Benefiting from considerable progress in the design of low-power, low cost and high-speed millimeter-wave circuits, Polymer Microwave Fibers (PMF) are gaining interest in the context of serial links. In this work, an innovative dual-band Quadrature Phase Shift Keying (QPSK) architecture, which is based on integrated wideband and low loss differential hybrid couplers, is proposed to increase data rate capability while still preserving low power and moderate range potentials. A circuit demonstrator in 28 nm CMOS FD-SOI is presented to validate the concepts. It achieves fifth harmonic locking on a wide continuous locking range and realizes 9 Gb/s data rate in the E-band.
{"title":"A High-Speed Millimeter-Wave QPSK Transmitter in 28nm CMOS FD-SOI for Polymer Microwave Fibers Applications","authors":"Florian Voineau, B. Martineau, Mathilde Sié, A. Ghiotto, E. Kerhervé","doi":"10.23919/EuMIC.2019.8909564","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909564","url":null,"abstract":"Benefiting from considerable progress in the design of low-power, low cost and high-speed millimeter-wave circuits, Polymer Microwave Fibers (PMF) are gaining interest in the context of serial links. In this work, an innovative dual-band Quadrature Phase Shift Keying (QPSK) architecture, which is based on integrated wideband and low loss differential hybrid couplers, is proposed to increase data rate capability while still preserving low power and moderate range potentials. A circuit demonstrator in 28 nm CMOS FD-SOI is presented to validate the concepts. It achieves fifth harmonic locking on a wide continuous locking range and realizes 9 Gb/s data rate in the E-band.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114116582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909483
R. S. N'Gongo, G. Ujwala, K. Suman, K. Y. Varma, Ch.S.M. Jyothi, Pramod K. Singh
This contribution deals with the design of a wideband 10W power amplifier based on non-distributed approach using 0.25 $mu$m AlGaN/GaN on SiC substrate. Due to the moderate power density of the process, the power amplifier has been designed using the non-distributed (conventional common source) approach with class AB operation. Thus, Gain flatness and output power and PAE become hard to maintain throughout the frequency bandwidth in non-distributed topology. Fabricated Power amplifier exhibits a power gain of 5dB and greater than 10W of saturated Power.
{"title":"A 5 to 18GHz, 10W GaN Power Amplifier Using Non-Distributed Approach","authors":"R. S. N'Gongo, G. Ujwala, K. Suman, K. Y. Varma, Ch.S.M. Jyothi, Pramod K. Singh","doi":"10.23919/EuMIC.2019.8909483","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909483","url":null,"abstract":"This contribution deals with the design of a wideband 10W power amplifier based on non-distributed approach using 0.25 $mu$m AlGaN/GaN on SiC substrate. Due to the moderate power density of the process, the power amplifier has been designed using the non-distributed (conventional common source) approach with class AB operation. Thus, Gain flatness and output power and PAE become hard to maintain throughout the frequency bandwidth in non-distributed topology. Fabricated Power amplifier exhibits a power gain of 5dB and greater than 10W of saturated Power.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114109254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909484
W. Ciccognani, S. Colangeli, A. Serino, L. Pace, S. Fenu, P. Longhi, E. Limiti, J. Poulain, R. Leblanc
This paper provides an assessment between two MMIC foundry processes for millimetre-wave high-performance receiver applications, namely, OMMIC’s 70 nm GaAs and 60 nm GaN-on-Si processes. To do so, a characterization and modelling campaign was carried out on transistors provided by OMMIC for the two processes, whose commercial names are D007IH (70 nm GaAs) and D006GH (60 nm GaN). The resulting models were employed to design several test vehicle Low-Noise Amplifiers (LNA) operating above 30 GHz. The GaAs LNAs have been manufactured and characterized, while the GaN-on-Si LNAs are being manufactured. The initial outcome of the assessment is that GaAs is still ahead if Noise Figure is the crucial and mandatory requirement. GaN-on-Si, on the other hand, proves to be a viable solution if a – slightly – higher Noise Figure is acceptable. Moreover, the benefits of GaN-on-Si, with respect to GaAs, are higher robustness, output power, linearity, and higher integration capability with CMOS technologies.
{"title":"Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies","authors":"W. Ciccognani, S. Colangeli, A. Serino, L. Pace, S. Fenu, P. Longhi, E. Limiti, J. Poulain, R. Leblanc","doi":"10.23919/EuMIC.2019.8909484","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909484","url":null,"abstract":"This paper provides an assessment between two MMIC foundry processes for millimetre-wave high-performance receiver applications, namely, OMMIC’s 70 nm GaAs and 60 nm GaN-on-Si processes. To do so, a characterization and modelling campaign was carried out on transistors provided by OMMIC for the two processes, whose commercial names are D007IH (70 nm GaAs) and D006GH (60 nm GaN). The resulting models were employed to design several test vehicle Low-Noise Amplifiers (LNA) operating above 30 GHz. The GaAs LNAs have been manufactured and characterized, while the GaN-on-Si LNAs are being manufactured. The initial outcome of the assessment is that GaAs is still ahead if Noise Figure is the crucial and mandatory requirement. GaN-on-Si, on the other hand, proves to be a viable solution if a – slightly – higher Noise Figure is acceptable. Moreover, the benefits of GaN-on-Si, with respect to GaAs, are higher robustness, output power, linearity, and higher integration capability with CMOS technologies.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125477021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A 22-30 GHz gallium nitride (GaN) low-noise amplifier (LNA) with a noise Figure (NF) of 0.87-1.51 dB is presented in this work. This LNA was fabricated with 100 nm gate-length AlN/GaN on silicon (Si) microwave monolithic integrated circuit (MMIC) process. The linear gain is 14-17 dB with input/output return loss over 10 dB across the band. To investigate the robustness of this LNA, 1 Watt continuous wave (CW) at 27 GHz was stressed on the input port of LNA. The decrease of gain and increase of NF were found after stress. Experimental research and first-principles calculations were carried out to investigate the physical mechanism of theses degradations, which indicate that the dehydrogenation of VGaH3 complexes in GaN channel caused the decrease of gain and the creation of VAl-H4 in the aluminum nitride (AlN) barrier caused the increase of NF.
{"title":"Proceedings of the 14th European Microwave Integrated Circuits Conference Degradation of Ka band GaN Low-Noise Amplifier under High Input Power Stress","authors":"X. Tong, Rong Wang, Shiyong Zhang, Jianxing Xu, Penghui Zheng, Fengxiang Chen","doi":"10.23919/EuMIC.2019.8909413","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909413","url":null,"abstract":"A 22-30 GHz gallium nitride (GaN) low-noise amplifier (LNA) with a noise Figure (NF) of 0.87-1.51 dB is presented in this work. This LNA was fabricated with 100 nm gate-length AlN/GaN on silicon (Si) microwave monolithic integrated circuit (MMIC) process. The linear gain is 14-17 dB with input/output return loss over 10 dB across the band. To investigate the robustness of this LNA, 1 Watt continuous wave (CW) at 27 GHz was stressed on the input port of LNA. The decrease of gain and increase of NF were found after stress. Experimental research and first-principles calculations were carried out to investigate the physical mechanism of theses degradations, which indicate that the dehydrogenation of VGaH3 complexes in GaN channel caused the decrease of gain and the creation of VAl-H4 in the aluminum nitride (AlN) barrier caused the increase of NF.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123605825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：