Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909470
O. Bengtsson, Sophie Paul, W. Heinrich
An integrated GaN-HEMT with floating low-frequency (LF) ground is presented. The floating LF ground enables reverse operation in RF applications making operation at offset DC and LF voltages possible. The RF is capacitive coupled to ground using MIM capacitors. On-chip RF isolation is established through a short-circuited RF $lambda$/4-line. The transistor shows good agreement between measured and simulated small-signal behavior. Compared to standard two-port devices, the stability of the three-port device is more challenging, particularly in the LF to RF transition region but also in the RF band. The large-signal behavior is verified using load-pull measurements and shows 0.7 dB power degradation compared to the non-floating device but drain efficiency is almost unaffected. At 10 GHz the 1 mm gatewidth device shows a saturated output power of 35.4 dBm (3.5 W) and a maximum drain efficiency of 50 % is achieved. Floating operation at 20 V VDS shows identical small-signal results with the LF ground potential at 8 V as for grounded operation with the LF ground potential at 0 V.
{"title":"A GaN-HEMT with Floating LF Ground for Reverse Operation in Integrated RF Power Circuits","authors":"O. Bengtsson, Sophie Paul, W. Heinrich","doi":"10.23919/EuMIC.2019.8909470","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909470","url":null,"abstract":"An integrated GaN-HEMT with floating low-frequency (LF) ground is presented. The floating LF ground enables reverse operation in RF applications making operation at offset DC and LF voltages possible. The RF is capacitive coupled to ground using MIM capacitors. On-chip RF isolation is established through a short-circuited RF $lambda$/4-line. The transistor shows good agreement between measured and simulated small-signal behavior. Compared to standard two-port devices, the stability of the three-port device is more challenging, particularly in the LF to RF transition region but also in the RF band. The large-signal behavior is verified using load-pull measurements and shows 0.7 dB power degradation compared to the non-floating device but drain efficiency is almost unaffected. At 10 GHz the 1 mm gatewidth device shows a saturated output power of 35.4 dBm (3.5 W) and a maximum drain efficiency of 50 % is achieved. Floating operation at 20 V VDS shows identical small-signal results with the LF ground potential at 8 V as for grounded operation with the LF ground potential at 0 V.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123743461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909421
M. Hangai, Ryota Komaru, S. Miwa, Y. Kamo, S. Shinjo
Broadband high-power GaN MMIC switch has been successfully developed. The switch is based on stacked-FET circuits. By employing the configuration, high-power and low-loss performances can be achieved in broadband frequency range. The design equations to minimize insertion loss while maintaining high-power handling capability have been analytically derived. To verify this methodology, an MMIC switch was fabricated at 2-12 GHz. The switch demonstrates the power handling capability of 10W and the insertion loss of 1.5dB.
{"title":"2-12 GHz High-Power GaN MMIC Switch Utilizing Stacked-FET Circuits","authors":"M. Hangai, Ryota Komaru, S. Miwa, Y. Kamo, S. Shinjo","doi":"10.23919/EuMIC.2019.8909421","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909421","url":null,"abstract":"Broadband high-power GaN MMIC switch has been successfully developed. The switch is based on stacked-FET circuits. By employing the configuration, high-power and low-loss performances can be achieved in broadband frequency range. The design equations to minimize insertion loss while maintaining high-power handling capability have been analytically derived. To verify this methodology, an MMIC switch was fabricated at 2-12 GHz. The switch demonstrates the power handling capability of 10W and the insertion loss of 1.5dB.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124786717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909408
S. Driad, C. Teyssandier, C. Chang, L. Brunel, A. Couturier, V. Brunel, D. Floriot, H. Stieglauer, H. Blanck
This work is focused on both experimental and modelling analysis of the temperature effect on $0.25- mu mathrm{m}$ AlGaN/GaN HEMT performances. The temperature-dependence is analyzed by means of DC and Load-Pull measurement in the temperature range from $- 45^{circ}mathrm{C}$ to +$85^{circ}mathrm{C}$. The impact of the second harmonic matching on the PAE is also investigated in the paper. Thermal modelling validation is carried out showing a good accuracy of the model to predict the device thermal behaviour. A 20W X-BAND MMIC is designed at UMS. Comparison of the measurement and the simulation at the circuit level demonstrates the UMS GH25-10 capabilities for space applications.
本工作的重点是对温度对$0.25- mu mathm {m}$ AlGaN/GaN HEMT性能的影响进行实验和建模分析。在$- 45^{circ}mathrm{C}$到+$85^{circ}mathrm{C}$的温度范围内，通过直流和负载-拉力测量分析了温度依赖性。本文还研究了二次谐波匹配对谐波阻抗的影响。进行了热建模验证，显示了模型预测器件热行为的良好准确性。在UMS设计了一个20W x波段MMIC。电路级的测量和仿真比较证明了UMS GH25-10在空间应用中的能力。
{"title":"Thermal Performances of Industrial 0.25-μm GaN Technology for Space Applications","authors":"S. Driad, C. Teyssandier, C. Chang, L. Brunel, A. Couturier, V. Brunel, D. Floriot, H. Stieglauer, H. Blanck","doi":"10.23919/EuMIC.2019.8909408","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909408","url":null,"abstract":"This work is focused on both experimental and modelling analysis of the temperature effect on $0.25- mu mathrm{m}$ AlGaN/GaN HEMT performances. The temperature-dependence is analyzed by means of DC and Load-Pull measurement in the temperature range from $- 45^{circ}mathrm{C}$ to +$85^{circ}mathrm{C}$. The impact of the second harmonic matching on the PAE is also investigated in the paper. Thermal modelling validation is carried out showing a good accuracy of the model to predict the device thermal behaviour. A 20W X-BAND MMIC is designed at UMS. Comparison of the measurement and the simulation at the circuit level demonstrates the UMS GH25-10 capabilities for space applications.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"14 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126103171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909537
Hui-Dong Lee, Sunwoo Kong, Seunghyun Jang, Kwang-Seon Kim, Kwangchun Lee, Bonghyuk Park
This paper presents a miniaturized 28-GHz FEM implemented in 0.15-μm InGaAs/GaAs E-mode pHEMT process. It is designed for use with 28-GHz switching beamforming systems. In order to miniaturize the system, the RF FEM is mounted on the printed circuit board in the form of individual PA, switch, and LNA chips, and development has been made to facilitate the mounting of mobile terminals. The results of the FEM transmitter verification including the implemented filter on the PCB have a gain of 17.9 dB, an output P1 dB of 24.2 dBm and an EVM of -30 dB at 20 dBm output. As a result of the receiver verification, the gain is around 20 dB, the input P1 dB is -30 dBm, and the EVM performance of -30 dB is tested at -10 dBm output.
{"title":"A miniatured 28-GHz FEM using a 0.15-μm InGaAs/GaAs E-mode pHEMT process","authors":"Hui-Dong Lee, Sunwoo Kong, Seunghyun Jang, Kwang-Seon Kim, Kwangchun Lee, Bonghyuk Park","doi":"10.23919/EuMIC.2019.8909537","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909537","url":null,"abstract":"This paper presents a miniaturized 28-GHz FEM implemented in 0.15-μm InGaAs/GaAs E-mode pHEMT process. It is designed for use with 28-GHz switching beamforming systems. In order to miniaturize the system, the RF FEM is mounted on the printed circuit board in the form of individual PA, switch, and LNA chips, and development has been made to facilitate the mounting of mobile terminals. The results of the FEM transmitter verification including the implemented filter on the PCB have a gain of 17.9 dB, an output P1 dB of 24.2 dBm and an EVM of -30 dB at 20 dBm output. As a result of the receiver verification, the gain is around 20 dB, the input P1 dB is -30 dBm, and the EVM performance of -30 dB is tested at -10 dBm output.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127191779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909671
G. V. D. Bent, A. P. de Hek, F. V. van Vliet
The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or financial limitations. A good alternative is the screening of several DC parameters that are relevant for a reliable operation. Commonly used parameters for this DC-screening are the pinch-off voltage and off-state breakdown voltage of the transistors. To measure these parameters on all transistors, access is required to the gate, drain and source terminals of these transistors. In a Stacked-FET amplifier not all transistors terminals are directly accessible via DC pads and the inclusion of extra pads will result in a significantly larger layout. The goal therefore is to measure the DC behaviour without the need for extra DC pads. In this article methods are developed to support this goal.
{"title":"Screening of Integrated GaAs Stacked-FET Power Amplifiers","authors":"G. V. D. Bent, A. P. de Hek, F. V. van Vliet","doi":"10.23919/EuMIC.2019.8909671","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909671","url":null,"abstract":"The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or financial limitations. A good alternative is the screening of several DC parameters that are relevant for a reliable operation. Commonly used parameters for this DC-screening are the pinch-off voltage and off-state breakdown voltage of the transistors. To measure these parameters on all transistors, access is required to the gate, drain and source terminals of these transistors. In a Stacked-FET amplifier not all transistors terminals are directly accessible via DC pads and the inclusion of extra pads will result in a significantly larger layout. The goal therefore is to measure the DC behaviour without the need for extra DC pads. In this article methods are developed to support this goal.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125441656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909568
A. Amer, A. Y. Mohamed Abdalla, I. Eshrah
This paper describes the design and measurement of a programmable dynamic range square-law power detector (PD) for a wideband mm-Wave transceiver operating at (20-44 GHz) frequency range. The PD is designed and fabricated in TSMC 0.18um BiCMOS technology. Theoretical analysis and CAD harmonic balance simulation were performed to show the detector performance. This detector is designed for AutomaticGain-control (AGC) for optimizing transceivers performance by setting the received and transmitted power to the required sweet operating spot range. The proposed square-law detector uses programmable resistance to switch between the available detection range, current subtraction technique to increase the available output voltage range, resistor degeneration to reduce the mismatches, and finally input cross capacitors to absorb the conversion gain reduction due to the degeneration and to provide high common mode rejection (CMR). In the matched frequency range, the measured input dynamic range has increased by 7 dB switchable range. The detector response is varying by around ±1 dBV for a given input RF power, as the RF frequency is swept across the operating frequency range. Static power consumption is 5.2mW from a 3.3 V supply.
{"title":"20-44 GHz Mismatch Tolerant Programmable Dynamic Range with Inherent CMRR Square Law Detector for AGC Applications","authors":"A. Amer, A. Y. Mohamed Abdalla, I. Eshrah","doi":"10.23919/EuMIC.2019.8909568","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909568","url":null,"abstract":"This paper describes the design and measurement of a programmable dynamic range square-law power detector (PD) for a wideband mm-Wave transceiver operating at (20-44 GHz) frequency range. The PD is designed and fabricated in TSMC 0.18um BiCMOS technology. Theoretical analysis and CAD harmonic balance simulation were performed to show the detector performance. This detector is designed for AutomaticGain-control (AGC) for optimizing transceivers performance by setting the received and transmitted power to the required sweet operating spot range. The proposed square-law detector uses programmable resistance to switch between the available detection range, current subtraction technique to increase the available output voltage range, resistor degeneration to reduce the mismatches, and finally input cross capacitors to absorb the conversion gain reduction due to the degeneration and to provide high common mode rejection (CMR). In the matched frequency range, the measured input dynamic range has increased by 7 dB switchable range. The detector response is varying by around ±1 dBV for a given input RF power, as the RF frequency is swept across the operating frequency range. Static power consumption is 5.2mW from a 3.3 V supply.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117284255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909653
E. Kaule, Cristina Andrei, S. Gerlich, R. Doerner, M. Rudolph
Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.
{"title":"Limiting the Output Power of Rugged GaN LNAs","authors":"E. Kaule, Cristina Andrei, S. Gerlich, R. Doerner, M. Rudolph","doi":"10.23919/EuMIC.2019.8909653","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909653","url":null,"abstract":"Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121829663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909582
J. Rimmelspacher, A. Werthof, R. Weigel, V. Issakov
The unity current gain frequency (fT) and the maximum oscillation frequency (fmax) are key parameters used to characterize the highest achievable speed of a semiconductor technology. However, there is typically a high uncertainty level concerning evaluation of these values, related to several factors. First, these metrics are obtained from small-signal transistor measurements at low gigahertz frequencies and extrapolated far to a range of several hundreds of gigahertz. Hence, a large deviation of obtained values is possible, depending on the point at which the extrapolation is taken. Second, depending on metallization layer down to which the transistor interconnect parasitics are de-embedded, the value of fmax may vary significantly. Therefore, it is a challenge to compare technologies in a fair and consistent way by means of reported fT and fmaxvalues, since these values could have been obtained for strongly differencing conditions. This paper presents a systematic comparison of fT and fmax values for two technologies: 40 nm bulk CMOS and 45 nm RF silicon-on-insulator (RF-SOI) CMOS. The values are obtained experimentally from S-parameter measurements under rigorously similar conditions for both technologies. We use the same extrapolation frequencies and de-embed the results down to the same metal level using the same de-embedding technique and similar structures. Finally, we discuss the results and provide additional insights.
{"title":"Systematic Experimental fT and fmax Comparison of 40-nm Bulk CMOS versus 45-nm SOI Technology","authors":"J. Rimmelspacher, A. Werthof, R. Weigel, V. Issakov","doi":"10.23919/EuMIC.2019.8909582","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909582","url":null,"abstract":"The unity current gain frequency (fT) and the maximum oscillation frequency (fmax) are key parameters used to characterize the highest achievable speed of a semiconductor technology. However, there is typically a high uncertainty level concerning evaluation of these values, related to several factors. First, these metrics are obtained from small-signal transistor measurements at low gigahertz frequencies and extrapolated far to a range of several hundreds of gigahertz. Hence, a large deviation of obtained values is possible, depending on the point at which the extrapolation is taken. Second, depending on metallization layer down to which the transistor interconnect parasitics are de-embedded, the value of fmax may vary significantly. Therefore, it is a challenge to compare technologies in a fair and consistent way by means of reported fT and fmaxvalues, since these values could have been obtained for strongly differencing conditions. This paper presents a systematic comparison of fT and fmax values for two technologies: 40 nm bulk CMOS and 45 nm RF silicon-on-insulator (RF-SOI) CMOS. The values are obtained experimentally from S-parameter measurements under rigorously similar conditions for both technologies. We use the same extrapolation frequencies and de-embed the results down to the same metal level using the same de-embedding technique and similar structures. Finally, we discuss the results and provide additional insights.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127447818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909611
Ahmet Değirmenci, Ahmet Aktuğ
In this paper, a 3-stage, Ka-Band, asymmetrical Doherty Power Amplifier (DPA) MMIC using 0.15-$mu$ m depletion mode (D-mode) Gallium Arsenide (GaAs) pHEMT is presented. In order to increase operation bandwidth, the quarter-wavelength ($lambda$/4) transmission line behind main amplifier is eliminated and the output matching network is optimized for both back-off and peak efficiency. A 20-ohm Wilkinson power divider is used behind 1$^{st}$ stage so that the input impedance of the power divider can be easily transformed to the load impedance that the device at 1$^{st}$ stage must see. The fabricated DPA exhibits a measured output power of 27-27.5 dBm with a peak power added-efficiency (PAE) of 37%-39% in the frequency band of 27.25-29.75 GHz. The PAE at 6 dB and 7dB output power back-off are obtained as 25%-29% and 22%-28% respectively. Additionally, the large signal gain larger than 18 dB is obtained in the band of operation.
本文提出了一种采用0.15- $mu$ m耗尽模式(D-mode)砷化镓(GaAs) pHEMT的3级ka波段非对称Doherty功率放大器(DPA) MMIC。为了增加工作带宽，消除了主放大器后面的四分之一波长($lambda$ /4)传输线，并优化了输出匹配网络的回退和峰值效率。1 $^{st}$级后面使用了一个20欧姆的威尔金森功率分压器，以便功率分压器的输入阻抗可以很容易地转换为1 $^{st}$级设备必须看到的负载阻抗。该DPA的实测输出功率为27 ～ 27.5 dBm，峰值功率附加效率(PAE)为37%-39% in the frequency band of 27.25-29.75 GHz. The PAE at 6 dB and 7dB output power back-off are obtained as 25%-29% and 22%-28% respectively. Additionally, the large signal gain larger than 18 dB is obtained in the band of operation.
{"title":"A High Gain Ka-Band Asymmetrical GaAs Doherty Power Amplifier MMIC for 5G Applications","authors":"Ahmet Değirmenci, Ahmet Aktuğ","doi":"10.23919/EuMIC.2019.8909611","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909611","url":null,"abstract":"In this paper, a 3-stage, Ka-Band, asymmetrical Doherty Power Amplifier (DPA) MMIC using 0.15-$mu$ m depletion mode (D-mode) Gallium Arsenide (GaAs) pHEMT is presented. In order to increase operation bandwidth, the quarter-wavelength ($lambda$/4) transmission line behind main amplifier is eliminated and the output matching network is optimized for both back-off and peak efficiency. A 20-ohm Wilkinson power divider is used behind 1$^{st}$ stage so that the input impedance of the power divider can be easily transformed to the load impedance that the device at 1$^{st}$ stage must see. The fabricated DPA exhibits a measured output power of 27-27.5 dBm with a peak power added-efficiency (PAE) of 37%-39% in the frequency band of 27.25-29.75 GHz. The PAE at 6 dB and 7dB output power back-off are obtained as 25%-29% and 22%-28% respectively. Additionally, the large signal gain larger than 18 dB is obtained in the band of operation.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116675763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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