Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909489
A. Garufo, A. Davies, I. Lager, N. Llombart, A. Neto, P. Sberna, G. Carluccio, J. Freeman, D. R. Bacon, L. Li, J. Bueno, J. Baselmans, E. Linfield
A novel pulsed photoconductive THz source is presented that is able to radiate mW-level average powers, over a large bandwidth by exploiting both the optical and electrical properties of photoconductive sources and the ultrawideband properties of connected antenna arrays. An optical system composed of a micro-lenses array splits the laser beam into N x N spots that host the active excitation of the antenna arrays. An “ad hoc” network has been adopted to bias the array active spots in order to implement a connected antenna array configuration. The array feeds a silicon lens to increase the directivity of the radiated THz beam. A slot array prototype has been designed, fabricated, and measured. The proposed solutions achieve excellent power radiation levels by making use of an accurate electromagnetic design. This solution can offer enhancements to any active system relying on pulsed photoconductive antennas.
{"title":"Pulsed Photoconductive Connected Slot Array Operating at the Sub-mm Wavelength Band","authors":"A. Garufo, A. Davies, I. Lager, N. Llombart, A. Neto, P. Sberna, G. Carluccio, J. Freeman, D. R. Bacon, L. Li, J. Bueno, J. Baselmans, E. Linfield","doi":"10.23919/EuMIC.2019.8909489","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909489","url":null,"abstract":"A novel pulsed photoconductive THz source is presented that is able to radiate mW-level average powers, over a large bandwidth by exploiting both the optical and electrical properties of photoconductive sources and the ultrawideband properties of connected antenna arrays. An optical system composed of a micro-lenses array splits the laser beam into N x N spots that host the active excitation of the antenna arrays. An “ad hoc” network has been adopted to bias the array active spots in order to implement a connected antenna array configuration. The array feeds a silicon lens to increase the directivity of the radiated THz beam. A slot array prototype has been designed, fabricated, and measured. The proposed solutions achieve excellent power radiation levels by making use of an accurate electromagnetic design. This solution can offer enhancements to any active system relying on pulsed photoconductive antennas.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129526945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909673
T. Johansen, M. Hossain, S. Boppel, R. Doerner, V. Krozer, W. Heinrich
This paper presents a monolithic integrated active frequency tripler implemented in an InP double heterojunction bipolar transistor (DHBT) transferred-substrate (TS) technology. The active tripler is based on a balanced topology with Marchand balun at the input and rat-race hybrid coupler at the output. Reflector networks are employed to enhanced the third harmonic response. The measured third harmonic output power is -2.4dBm at 267 GHz and -6.2 dBm at 303 GHz. The second harmonic leakage remains 10 dB lower than the third harmonic power over this bandwidth. The DC power consumption of the active tripler is only 37.6 mW at 303 GHz leading to a DC conversion efficiency of 0.64%.
{"title":"A 300 GHz Active Frequency Tripler in Transferred-Substrate InP DHBT Technology","authors":"T. Johansen, M. Hossain, S. Boppel, R. Doerner, V. Krozer, W. Heinrich","doi":"10.23919/EuMIC.2019.8909673","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909673","url":null,"abstract":"This paper presents a monolithic integrated active frequency tripler implemented in an InP double heterojunction bipolar transistor (DHBT) transferred-substrate (TS) technology. The active tripler is based on a balanced topology with Marchand balun at the input and rat-race hybrid coupler at the output. Reflector networks are employed to enhanced the third harmonic response. The measured third harmonic output power is -2.4dBm at 267 GHz and -6.2 dBm at 303 GHz. The second harmonic leakage remains 10 dB lower than the third harmonic power over this bandwidth. The DC power consumption of the active tripler is only 37.6 mW at 303 GHz leading to a DC conversion efficiency of 0.64%.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134223606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909558
A. Saadi, M. Margalef, S. L. Pilliet, C. Gaquière, D. Gloria, C. Durand, P. Ferrari
In this paper Metal-Oxide-Metal (MOM) capacitors integrated in a BiCMOS 55-nm process are characterized by using 3D-TRL calibration technique. Using 3D electromagnetic (EM) simulation, optimized 3D-TRL standards were designed to cancel the impact of the Back-End-of-Line and define new reference planes at the MOM access-line on low level metal (Metal 4). The intrinsic MOM parameters were well extracted and good agreement was reached between, 3D EM simulation, Design-kit simulation and measurement within the frequency range from 140 to 220 GHz. Further, based on EM simulation, the 3D-TRL was compared to the conventional TRL. This proved the advantage of the 3D-TRL in the parasitic resistance extraction. To the best of author’s knowledge, it is the first time that MOM capacitors are accurately characterized in this frequency range.
{"title":"MOM Capacitance Characterization in G-Band using On-wafer 3D-TRL Calibration","authors":"A. Saadi, M. Margalef, S. L. Pilliet, C. Gaquière, D. Gloria, C. Durand, P. Ferrari","doi":"10.23919/EuMIC.2019.8909558","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909558","url":null,"abstract":"In this paper Metal-Oxide-Metal (MOM) capacitors integrated in a BiCMOS 55-nm process are characterized by using 3D-TRL calibration technique. Using 3D electromagnetic (EM) simulation, optimized 3D-TRL standards were designed to cancel the impact of the Back-End-of-Line and define new reference planes at the MOM access-line on low level metal (Metal 4). The intrinsic MOM parameters were well extracted and good agreement was reached between, 3D EM simulation, Design-kit simulation and measurement within the frequency range from 140 to 220 GHz. Further, based on EM simulation, the 3D-TRL was compared to the conventional TRL. This proved the advantage of the 3D-TRL in the parasitic resistance extraction. To the best of author’s knowledge, it is the first time that MOM capacitors are accurately characterized in this frequency range.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117100394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909679
A. Taeb, S. Gigoyan, M. Basha, S. Chaudhuri, S. Safavi-Naeini
This paper presents a novel approach to realize a low-cost and wide-band phase shifter structure operating over 150-190 GHz range of frequencies. The proposed finger-shaped phase shifter is implemented based on a newly developed integrated Silicon-On-Glass (SOG) technology. The phase shifting mechanism is achieved by moving a finger-shaped High Conductivity Silicon (HCS) section over the High Resistivity Silicon (HRS) waveguide, using a micro-positioner. Perturbing the silicon waveguide field causes phase shift. The experimental results indicates the proposed SOG finger-shaped phase shifter provides the averages of 15.6 degree/wavelength phase shift and 1.38 dB/wavelength added loss, respectively, over 150-190 GHz range of frequencies.
{"title":"A Novel Wide-Band Finger-Shaped Phase Shifter on Silicon-On-Glass (SOG) Technology for Sub-Millimeter Wave and Terahertz Applications","authors":"A. Taeb, S. Gigoyan, M. Basha, S. Chaudhuri, S. Safavi-Naeini","doi":"10.23919/EuMIC.2019.8909679","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909679","url":null,"abstract":"This paper presents a novel approach to realize a low-cost and wide-band phase shifter structure operating over 150-190 GHz range of frequencies. The proposed finger-shaped phase shifter is implemented based on a newly developed integrated Silicon-On-Glass (SOG) technology. The phase shifting mechanism is achieved by moving a finger-shaped High Conductivity Silicon (HCS) section over the High Resistivity Silicon (HRS) waveguide, using a micro-positioner. Perturbing the silicon waveguide field causes phase shift. The experimental results indicates the proposed SOG finger-shaped phase shifter provides the averages of 15.6 degree/wavelength phase shift and 1.38 dB/wavelength added loss, respectively, over 150-190 GHz range of frequencies.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116231851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909548
W. Wei, S. Mhedhbi, S. B. Salk, T. Levert, O. Txoperena, E. Pallecchi, H. Happy
We report a bonding free fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with different gate length (100 nm, 200 nm and 300 nm) and different channel width $(12 mu mathrm{m}, 24 mu mathrm{m}$ and $50 mu mathrm{m})$ are successfully fabricated on Kapton substrate. The transistor yield is more than 80%. Our GFETs exhibit good stability with 0.5% strain applied. Our finding ensures for next application of RF circuit based on graphene transistor.
我们报道了一种适用于柔性衬底石墨烯场效应晶体管(gfet)的无键制造工艺。在Kapton衬底上成功制备了不同栅极长度(100 nm、200 nm和300 nm)和不同通道宽度(12 mu mathrm{m}、24 mu mathrm{m}$和50 mu mathrm{m})$的晶体管。晶体管的良率超过80%。我们的gfet在0.5%的应变下表现出良好的稳定性。我们的发现为基于石墨烯晶体管的射频电路的下一步应用奠定了基础。
{"title":"Gigahertz Frequency Graphene Transistor, high yield process and good stability under strain","authors":"W. Wei, S. Mhedhbi, S. B. Salk, T. Levert, O. Txoperena, E. Pallecchi, H. Happy","doi":"10.23919/EuMIC.2019.8909548","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909548","url":null,"abstract":"We report a bonding free fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with different gate length (100 nm, 200 nm and 300 nm) and different channel width $(12 mu mathrm{m}, 24 mu mathrm{m}$ and $50 mu mathrm{m})$ are successfully fabricated on Kapton substrate. The transistor yield is more than 80%. Our GFETs exhibit good stability with 0.5% strain applied. Our finding ensures for next application of RF circuit based on graphene transistor.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121144250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909524
L. Marechal, B. Gerfault, G. L. Rhun, M. Dinari, T. Huet, E. Richard, V. Serru, M. Camiade, C. Chang, L. Brunel, G. Mouchon
This paper describes the design methodology and characterization of a 10W K Band packaged amplifier for space applications. The MMIC was developed on the new UMS $0.15 mumathrm{m}$ gate length GaN technology on SiC substrate as the final stage of a downlink satellite transmitter in the 17.3-20.2 GHz frequency band. A dedicated hermetic package has been developed around the MMIC with an output waveguide transition (compatible of WR51) for low loss integration in a Solid State Power Amplifier (SSPA) output combiner. This packaged High Power Amplifier (HPA) measured in CW mode, reaches 10W output power in saturation, with an associated 35% of Power Added Efficiency (PAE) and 10° AM-PM variation. These data are provided for a package backside temperature of $90^{circ}mathrm{C}$.
{"title":"10W K band GaN MMIC amplifier embedded in Waveguide-based Metal Ceramic Package","authors":"L. Marechal, B. Gerfault, G. L. Rhun, M. Dinari, T. Huet, E. Richard, V. Serru, M. Camiade, C. Chang, L. Brunel, G. Mouchon","doi":"10.23919/EuMIC.2019.8909524","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909524","url":null,"abstract":"This paper describes the design methodology and characterization of a 10W K Band packaged amplifier for space applications. The MMIC was developed on the new UMS $0.15 mumathrm{m}$ gate length GaN technology on SiC substrate as the final stage of a downlink satellite transmitter in the 17.3-20.2 GHz frequency band. A dedicated hermetic package has been developed around the MMIC with an output waveguide transition (compatible of WR51) for low loss integration in a Solid State Power Amplifier (SSPA) output combiner. This packaged High Power Amplifier (HPA) measured in CW mode, reaches 10W output power in saturation, with an associated 35% of Power Added Efficiency (PAE) and 10° AM-PM variation. These data are provided for a package backside temperature of $90^{circ}mathrm{C}$.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130596642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909396
O. Ceylan, A. Işik, Yi Zhu, S. Pires
In this study, contributions of the proper harmonic terminations at the input and output of large power bars to efficiency of the packaged high power RF devices are presented. The designed networks have low-pass filter characteristic including specific terminations for 2nd harmonics and are implemented into ceramic packages. The power bars consist of 16 mm total gate width GaN HEMTs of 0.45 $mu$m process technology. The measured results show that proper terminations of the harmonics at the input and output provide 18 % DE improvement. 80.5 % peak drain efficiency and 52 dBm peak output power were achieved at 2.9 GHz. Drain efficiency was higher than 76 % in 2.7-3.1 GHz band.
{"title":"Experimental Analysis of In-package Harmonic Manipulations with a 160 W GaN HEMT Power Bar","authors":"O. Ceylan, A. Işik, Yi Zhu, S. Pires","doi":"10.23919/EuMIC.2019.8909396","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909396","url":null,"abstract":"In this study, contributions of the proper harmonic terminations at the input and output of large power bars to efficiency of the packaged high power RF devices are presented. The designed networks have low-pass filter characteristic including specific terminations for 2nd harmonics and are implemented into ceramic packages. The power bars consist of 16 mm total gate width GaN HEMTs of 0.45 $mu$m process technology. The measured results show that proper terminations of the harmonics at the input and output provide 18 % DE improvement. 80.5 % peak drain efficiency and 52 dBm peak output power were achieved at 2.9 GHz. Drain efficiency was higher than 76 % in 2.7-3.1 GHz band.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126758519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909465
N. Hasegawa, S. Kishimoto, S. Yamaura
In this paper, a circuit configuration to solve the problem of hot carrier injection (HCI) in a millimeter-wave amplifier is proposed. It is necessary to drive the LO-terminal of a mixer with sufficient voltage swing, but as it is generally known, there is the problem of HCI in CMOS transistors. Applying voltage exceeding the HCI limit to a transistor will accelerate the degradation of the transistor. Therefore, we controlled the output power of the driver amplifier to adjust the voltage swing to an allowable range. Furthermore, by controlling the output power, a wide range of frequency flatness from 72 GHz to 88 GHz has been achieved. This circuit is fabricated in 40-nm CMOS.
{"title":"HCI-Proof Ultra-Broadband Millimeter-Wave Amplifier for Automotive Radar","authors":"N. Hasegawa, S. Kishimoto, S. Yamaura","doi":"10.23919/EuMIC.2019.8909465","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909465","url":null,"abstract":"In this paper, a circuit configuration to solve the problem of hot carrier injection (HCI) in a millimeter-wave amplifier is proposed. It is necessary to drive the LO-terminal of a mixer with sufficient voltage swing, but as it is generally known, there is the problem of HCI in CMOS transistors. Applying voltage exceeding the HCI limit to a transistor will accelerate the degradation of the transistor. Therefore, we controlled the output power of the driver amplifier to adjust the voltage swing to an allowable range. Furthermore, by controlling the output power, a wide range of frequency flatness from 72 GHz to 88 GHz has been achieved. This circuit is fabricated in 40-nm CMOS.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127542130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909543
Renbin Tong, Stefan Book, L. H. Duc, D. Dancila
This paper demonstrates a high-efficiency kilowatt-level Class E RF power amplifier which is designed as RF source for particle accelerator energy systems. Class E method of switch mode feathers is employed here to improve efficiency for such high power kilowatts PA in a single chip. It uses a powerful LDMOS-transistor in a single-ended design and provides 1200 W peak power with 83% drain efficiency and 19.9 dB gain at 100 MHz operation. In addition it provides 1010 W peak power with 87% drain efficiency and 20.4 dB gain at 102 MHz operation. All measurements were performed in pulsed operation with a 5% duty cycle, 3.5 ms pulse at 14 Hz repetition. According to the authors’ knowledge, this kilowatts power amplifier adopted Class E method is reported at first time in this field.
{"title":"A Planar Single-ended Kilowatt-level VHF Class E Power Amplifier","authors":"Renbin Tong, Stefan Book, L. H. Duc, D. Dancila","doi":"10.23919/EuMIC.2019.8909543","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909543","url":null,"abstract":"This paper demonstrates a high-efficiency kilowatt-level Class E RF power amplifier which is designed as RF source for particle accelerator energy systems. Class E method of switch mode feathers is employed here to improve efficiency for such high power kilowatts PA in a single chip. It uses a powerful LDMOS-transistor in a single-ended design and provides 1200 W peak power with 83% drain efficiency and 19.9 dB gain at 100 MHz operation. In addition it provides 1010 W peak power with 87% drain efficiency and 20.4 dB gain at 102 MHz operation. All measurements were performed in pulsed operation with a 5% duty cycle, 3.5 ms pulse at 14 Hz repetition. According to the authors’ knowledge, this kilowatts power amplifier adopted Class E method is reported at first time in this field.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126803870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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