Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909556
Chenghao Han, H. Tao
This paper describes the design and measured performance of a 18-40GHz 10W power amplifier (PA) MMIC utilizing combination of the distributed and reactive matching topology fabricated with an advanced 0.15μm Gallium Nitride (GaN) HEMT technology process. At the output stage of the power amplifier, reactive matching is used for better output power and power added efficient (PAE) design. To increase the gain and optimize the input return loss, distributed amplifier has been adopted at the input stage. The power amplifier MMIC demonstrates 10-18 W output power, over 12dB power gain and PAE of 15-27% over 18-40 GHz band under 20V drain bias. The chip is compact with the size of 3.2×2.8 mm2 and it delivers an average output power density 1.52 W/mm2 over the chip area. To the best of our knowledge, the pout, PAE and power density are highest among the published work for K/Ka-band PA MMICs.
{"title":"A 18-40GHz 10W GaN Power Amplifier MMIC Utilizing Combination of the Distributed and Reactive Matching Topology","authors":"Chenghao Han, H. Tao","doi":"10.23919/EuMIC.2019.8909556","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909556","url":null,"abstract":"This paper describes the design and measured performance of a 18-40GHz 10W power amplifier (PA) MMIC utilizing combination of the distributed and reactive matching topology fabricated with an advanced 0.15μm Gallium Nitride (GaN) HEMT technology process. At the output stage of the power amplifier, reactive matching is used for better output power and power added efficient (PAE) design. To increase the gain and optimize the input return loss, distributed amplifier has been adopted at the input stage. The power amplifier MMIC demonstrates 10-18 W output power, over 12dB power gain and PAE of 15-27% over 18-40 GHz band under 20V drain bias. The chip is compact with the size of 3.2×2.8 mm2 and it delivers an average output power density 1.52 W/mm2 over the chip area. To the best of our knowledge, the pout, PAE and power density are highest among the published work for K/Ka-band PA MMICs.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126323625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/eumic.2019.8909577
{"title":"EuMIC 2019 Book of Abstracts","authors":"","doi":"10.23919/eumic.2019.8909577","DOIUrl":"https://doi.org/10.23919/eumic.2019.8909577","url":null,"abstract":"","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131127508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909399
M. Andree, J. Grzyb, R. Jain, B. Heinemann, U. Pfeiffer
This paper presents an integrated silicon-lens coupled THz direct detector. It comprises a pair of differentially driven antenna-coupled HBT transistors in common-base configuration implemented in an advanced $0.13-mu m$ SiGe HBT technology with $f_{T}/f_{max}$ of 350/550 GHz. Based on the antenna detector co-design approach, a broadband operation with an optical noise equivalent power (NEP) lower than 40 $pW/sqrt{Hz}$ in the measured 220 GHz to 1 THz band is achieved. The detector operates in a voltage mode readout with an external resistance of 1.83 $kOmega$. Two device regions have been investigated. In the forward-active mode the detector achieves its minimum NEP of 1.9 $pW/sqrt{Hz}$ at 292 GHz and values less than 4.3 $pW/sqrt{Hz}$ from 275 to 525 GHz at 100 kHz chopping frequency. The maximum voltage responsivities $(R_{v})$ are 9 $kV/W$ and around 7.5 $kV/W$ respectively. In the saturation region the minimum measured NEP from 220 GHz to 1 THz is 5.1 $pW/sqrt{Hz}$.
{"title":"A Broadband Antenna-Coupled Terahertz Direct Detector in a 0.13-μm SiGe HBT Technology","authors":"M. Andree, J. Grzyb, R. Jain, B. Heinemann, U. Pfeiffer","doi":"10.23919/EuMIC.2019.8909399","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909399","url":null,"abstract":"This paper presents an integrated silicon-lens coupled THz direct detector. It comprises a pair of differentially driven antenna-coupled HBT transistors in common-base configuration implemented in an advanced $0.13-mu m$ SiGe HBT technology with $f_{T}/f_{max}$ of 350/550 GHz. Based on the antenna detector co-design approach, a broadband operation with an optical noise equivalent power (NEP) lower than 40 $pW/sqrt{Hz}$ in the measured 220 GHz to 1 THz band is achieved. The detector operates in a voltage mode readout with an external resistance of 1.83 $kOmega$. Two device regions have been investigated. In the forward-active mode the detector achieves its minimum NEP of 1.9 $pW/sqrt{Hz}$ at 292 GHz and values less than 4.3 $pW/sqrt{Hz}$ from 275 to 525 GHz at 100 kHz chopping frequency. The maximum voltage responsivities $(R_{v})$ are 9 $kV/W$ and around 7.5 $kV/W$ respectively. In the saturation region the minimum measured NEP from 220 GHz to 1 THz is 5.1 $pW/sqrt{Hz}$.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132697772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909566
P. V. Testa, V. Riess, C. Carta, F. Ellinger
This paper presents an inductorless 60GHz down-conversion mixer integrated in a 22nm FD-SOI CMOS technology. The mixer is based on a single-balanced architecture followed by a common-source output buffer, and it performs a zero-IF conversion with –3dB corner frequency at 1GHz. The maximum differential single-side-band (SSB) conversion gain is 6dB, in agreement with simulation and circuit analysis. The required LO power is –4dBm, while the dissipated power is 18mW. The silicon footprint is 0.05mm2, which to the knowledge of the authors is the smallest reported so far for down-conversion mixers operating at 60GHz, with a factor 3 of improvement.
{"title":"An Inductorless 60GHz Down-Conversion Mixer in 22nm FD-SOI CMOS Technology","authors":"P. V. Testa, V. Riess, C. Carta, F. Ellinger","doi":"10.23919/EuMIC.2019.8909566","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909566","url":null,"abstract":"This paper presents an inductorless 60GHz down-conversion mixer integrated in a 22nm FD-SOI CMOS technology. The mixer is based on a single-balanced architecture followed by a common-source output buffer, and it performs a zero-IF conversion with –3dB corner frequency at 1GHz. The maximum differential single-side-band (SSB) conversion gain is 6dB, in agreement with simulation and circuit analysis. The required LO power is –4dBm, while the dissipated power is 18mW. The silicon footprint is 0.05mm2, which to the knowledge of the authors is the smallest reported so far for down-conversion mixers operating at 60GHz, with a factor 3 of improvement.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"554 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133350015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909428
Angel Blanco Granja, I. Monroy, A. Penirschke, D. Konstantinou, S. Rommel, B. Cimoli, Sebastián Rodríguez, R. Reese, U. Johannsen, R. Jakoby, T. Johansen
This article reports on a W-Band (75-110 GHz) Schottky diode based balanced envelope detector in microstrip technology, featuring a transition from WR-10 to microstrip. The manufactured detector provides 20 GHz of input RF bandwidth within the W-band. A video bandwidth between 4GHz and 6GHz is achieved for input RF frequencies between 75 GHz and 88 GHz, allowing error free transmission of signals up to 12 Gbit/s.
{"title":"High Data Rate W-Band Balanced Schottky Diode Envelope Detector for Broadband Communications","authors":"Angel Blanco Granja, I. Monroy, A. Penirschke, D. Konstantinou, S. Rommel, B. Cimoli, Sebastián Rodríguez, R. Reese, U. Johannsen, R. Jakoby, T. Johansen","doi":"10.23919/EuMIC.2019.8909428","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909428","url":null,"abstract":"This article reports on a W-Band (75-110 GHz) Schottky diode based balanced envelope detector in microstrip technology, featuring a transition from WR-10 to microstrip. The manufactured detector provides 20 GHz of input RF bandwidth within the W-band. A video bandwidth between 4GHz and 6GHz is achieved for input RF frequencies between 75 GHz and 88 GHz, allowing error free transmission of signals up to 12 Gbit/s.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"7 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124279495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909530
Alok Sethi, Jere Rusanen, J. Aikio, A. Pärssinen, T. Rahkonen
This paper presents a broadband linearization technique that can be used for mmWave amplifier circuits. It is based on the well-known principle of derivative superposition, where FETs with different operating points are connected in parallel to generate mutually cancelling third order intermodulation distortion (IM3) products. It is demonstrated by measurements in excess of 10 dB improvement in IM3 obtained from 1 GHz to 30 GHz, practically free by connecting a NMOS with very low gate bias in parallel of an amplifying NMOS. The reasons and limits of the cancellation are discussed. The inherent broadbandness of the technique makes it extremely suitable to be used in CMOS mmWave circuits.
{"title":"Broadband Linearization Technique for mmWave Circuits","authors":"Alok Sethi, Jere Rusanen, J. Aikio, A. Pärssinen, T. Rahkonen","doi":"10.23919/EuMIC.2019.8909530","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909530","url":null,"abstract":"This paper presents a broadband linearization technique that can be used for mmWave amplifier circuits. It is based on the well-known principle of derivative superposition, where FETs with different operating points are connected in parallel to generate mutually cancelling third order intermodulation distortion (IM3) products. It is demonstrated by measurements in excess of 10 dB improvement in IM3 obtained from 1 GHz to 30 GHz, practically free by connecting a NMOS with very low gate bias in parallel of an amplifying NMOS. The reasons and limits of the cancellation are discussed. The inherent broadbandness of the technique makes it extremely suitable to be used in CMOS mmWave circuits.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126268568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909451
G. Avolio, A. Raffo, M. Marchetti, G. Bosi, V. Vadalà, G. Vannini
We compared two approaches to use high-frequency transistor load-pull data directly into a circuit simulator. One approach is based on Artificial Neural Networks (ANN), the other on look-up tables (LUT). We discuss some practical aspects, including implementation in the CAD environment and extrapolation capability.
{"title":"GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study","authors":"G. Avolio, A. Raffo, M. Marchetti, G. Bosi, V. Vadalà, G. Vannini","doi":"10.23919/EuMIC.2019.8909451","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909451","url":null,"abstract":"We compared two approaches to use high-frequency transistor load-pull data directly into a circuit simulator. One approach is based on Artificial Neural Networks (ANN), the other on look-up tables (LUT). We discuss some practical aspects, including implementation in the CAD environment and extrapolation capability.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124428555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909410
Abdul Ali, P. Colantonio, F. Giannini, D. Kissinger, H. Ng, J. Yun
This paper presents a four-way combined G-band power amplifier (PA) using a 130-nm SiGe BiCMOS technology. A 185-GHz three-stage single-ended PA based on cascode topology with two driver stages and a power stage is designed. To combine output power of four single-ended PAs, a low-loss four-way reactive power combiner is designed. The developed PA shows a saturated output power of 18.1 dBm with peak gain of 25.9 dB and PAE of 3.5 % at 185 GHz. In addition, the PA provides a 3 dB and 6 dB bandwidth of 27 GHz and 42 GHz, respectively. To the best of our knowledge, the measured power reported in this paper is the highest for SiGe BiCMOS PAs in G-band.
{"title":"A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology","authors":"Abdul Ali, P. Colantonio, F. Giannini, D. Kissinger, H. Ng, J. Yun","doi":"10.23919/EuMIC.2019.8909410","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909410","url":null,"abstract":"This paper presents a four-way combined G-band power amplifier (PA) using a 130-nm SiGe BiCMOS technology. A 185-GHz three-stage single-ended PA based on cascode topology with two driver stages and a power stage is designed. To combine output power of four single-ended PAs, a low-loss four-way reactive power combiner is designed. The developed PA shows a saturated output power of 18.1 dBm with peak gain of 25.9 dB and PAE of 3.5 % at 185 GHz. In addition, the PA provides a 3 dB and 6 dB bandwidth of 27 GHz and 42 GHz, respectively. To the best of our knowledge, the measured power reported in this paper is the highest for SiGe BiCMOS PAs in G-band.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"52 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124307457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/EuMIC.2019.8909397
Pramod K. Singh, K. Suman, Santosh K Gedela, Kishore Bantupalli, K. Y. Varma, R. Gongo
Very high output power level is achieved at microwave frequencies using Gallium Nitride technologies due to high breakdown voltage, high current density and high carrier mobility in AlGaN/GaN based High Electron Mobility Transistors. The specific 0.45 $mu$m AlGaN/GaN on SiC HEMT based MMIC technology is developed for this purpose to operate at high DC bias voltage of 50 V to achieve high power at microwave frequencies. This paper demonstrates that a high microwave power exceeding 100 W can be achieved from a single MMIC chip fully matched to 50 Ohm at S-band frequencies. In addition to high power, high power added efficiency greater than 50% is also achieved in this chip. The implemented high-power amplifier chip is a two-stage amplifier achieving output power greater than 50 dBm with power gain better than 22 dB, and power added efficiency exceeding 50% over frequency range of 3.1-3.5 GHz. The MMIC chip layout area is as compact as 5.8 $times$ 3.3 mm2. The saturated output power density of transistor in this chip reaches value of 7 W/mm, maximum possible in this technology.
{"title":"100 W High Power Amplifier MMIC in 0.45 μm GaN Technology","authors":"Pramod K. Singh, K. Suman, Santosh K Gedela, Kishore Bantupalli, K. Y. Varma, R. Gongo","doi":"10.23919/EuMIC.2019.8909397","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909397","url":null,"abstract":"Very high output power level is achieved at microwave frequencies using Gallium Nitride technologies due to high breakdown voltage, high current density and high carrier mobility in AlGaN/GaN based High Electron Mobility Transistors. The specific 0.45 $mu$m AlGaN/GaN on SiC HEMT based MMIC technology is developed for this purpose to operate at high DC bias voltage of 50 V to achieve high power at microwave frequencies. This paper demonstrates that a high microwave power exceeding 100 W can be achieved from a single MMIC chip fully matched to 50 Ohm at S-band frequencies. In addition to high power, high power added efficiency greater than 50% is also achieved in this chip. The implemented high-power amplifier chip is a two-stage amplifier achieving output power greater than 50 dBm with power gain better than 22 dB, and power added efficiency exceeding 50% over frequency range of 3.1-3.5 GHz. The MMIC chip layout area is as compact as 5.8 $times$ 3.3 mm2. The saturated output power density of transistor in this chip reaches value of 7 W/mm, maximum possible in this technology.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129554791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.23919/eumic.2019.8909521
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