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2019 14th European Microwave Integrated Circuits Conference (EuMIC)最新文献

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High Data Rate W-Band Balanced Schottky Diode Envelope Detector for Broadband Communications 用于宽带通信的高数据速率w波段平衡肖特基二极管包络检测器
Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909428
Angel Blanco Granja, I. Monroy, A. Penirschke, D. Konstantinou, S. Rommel, B. Cimoli, Sebastián Rodríguez, R. Reese, U. Johannsen, R. Jakoby, T. Johansen
This article reports on a W-Band (75-110 GHz) Schottky diode based balanced envelope detector in microstrip technology, featuring a transition from WR-10 to microstrip. The manufactured detector provides 20 GHz of input RF bandwidth within the W-band. A video bandwidth between 4GHz and 6GHz is achieved for input RF frequencies between 75 GHz and 88 GHz, allowing error free transmission of signals up to 12 Gbit/s.
本文报道了一种基于w波段(75-110 GHz)肖特基二极管的微带平衡包线检测器,具有从WR-10过渡到微带的特点。制造的探测器在w波段内提供20 GHz的输入射频带宽。在输入射频频率为75 GHz ~ 88 GHz的情况下,可实现4GHz ~ 6GHz的视频带宽,可实现高达12gbit /s的无差错传输。
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引用次数: 1
Broadband Linearization Technique for mmWave Circuits 毫米波电路的宽带线性化技术
Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909530
Alok Sethi, Jere Rusanen, J. Aikio, A. Pärssinen, T. Rahkonen
This paper presents a broadband linearization technique that can be used for mmWave amplifier circuits. It is based on the well-known principle of derivative superposition, where FETs with different operating points are connected in parallel to generate mutually cancelling third order intermodulation distortion (IM3) products. It is demonstrated by measurements in excess of 10 dB improvement in IM3 obtained from 1 GHz to 30 GHz, practically free by connecting a NMOS with very low gate bias in parallel of an amplifying NMOS. The reasons and limits of the cancellation are discussed. The inherent broadbandness of the technique makes it extremely suitable to be used in CMOS mmWave circuits.
提出了一种适用于毫米波放大电路的宽带线性化技术。它基于众所周知的导数叠加原理,将不同工作点的fet并联起来,产生相互抵消的三阶互调失真(IM3)产物。通过将极低栅极偏置的NMOS与放大NMOS并联连接,在1 GHz至30 GHz范围内获得的IM3提高超过10 dB的测量结果证明了这一点。讨论了取消的原因和限制。该技术固有的宽带特性使其非常适合用于CMOS毫米波电路。
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引用次数: 1
A 18-40GHz 10W GaN Power Amplifier MMIC Utilizing Combination of the Distributed and Reactive Matching Topology 基于分布式无功匹配拓扑的18-40GHz 10W GaN功率放大器MMIC
Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909556
Chenghao Han, H. Tao
This paper describes the design and measured performance of a 18-40GHz 10W power amplifier (PA) MMIC utilizing combination of the distributed and reactive matching topology fabricated with an advanced 0.15μm Gallium Nitride (GaN) HEMT technology process. At the output stage of the power amplifier, reactive matching is used for better output power and power added efficient (PAE) design. To increase the gain and optimize the input return loss, distributed amplifier has been adopted at the input stage. The power amplifier MMIC demonstrates 10-18 W output power, over 12dB power gain and PAE of 15-27% over 18-40 GHz band under 20V drain bias. The chip is compact with the size of 3.2×2.8 mm2 and it delivers an average output power density 1.52 W/mm2 over the chip area. To the best of our knowledge, the pout, PAE and power density are highest among the published work for K/Ka-band PA MMICs.
本文介绍了采用先进的0.15μm氮化镓HEMT工艺制作的分布式和无功匹配拓扑相结合的18-40GHz 10W功率放大器(PA) MMIC的设计和性能测量。在功率放大器的输出级,采用无功匹配,以获得更好的输出功率和功率附加效率(PAE)设计。为了提高增益和优化输入回波损耗,在输入级采用了分布式放大器。功率放大器MMIC在20V漏极偏置下,输出功率为10- 18w,功率增益超过12dB, PAE在18- 40ghz频段上为15-27%。该芯片紧凑,尺寸为3.2×2.8 mm2,在芯片面积上的平均输出功率密度为1.52 W/mm2。据我们所知,在已发表的K/ ka波段PA mmic中,pout、PAE和功率密度最高。
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引用次数: 7
A Broadband Antenna-Coupled Terahertz Direct Detector in a 0.13-μm SiGe HBT Technology 基于0.13 μm SiGe HBT技术的宽带天线耦合太赫兹直接探测器
Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909399
M. Andree, J. Grzyb, R. Jain, B. Heinemann, U. Pfeiffer
This paper presents an integrated silicon-lens coupled THz direct detector. It comprises a pair of differentially driven antenna-coupled HBT transistors in common-base configuration implemented in an advanced $0.13-mu m$ SiGe HBT technology with $f_{T}/f_{max}$ of 350/550 GHz. Based on the antenna detector co-design approach, a broadband operation with an optical noise equivalent power (NEP) lower than 40 $pW/sqrt{Hz}$ in the measured 220 GHz to 1 THz band is achieved. The detector operates in a voltage mode readout with an external resistance of 1.83 $kOmega$. Two device regions have been investigated. In the forward-active mode the detector achieves its minimum NEP of 1.9 $pW/sqrt{Hz}$ at 292 GHz and values less than 4.3 $pW/sqrt{Hz}$ from 275 to 525 GHz at 100 kHz chopping frequency. The maximum voltage responsivities $(R_{v})$ are 9 $kV/W$ and around 7.5 $kV/W$ respectively. In the saturation region the minimum measured NEP from 220 GHz to 1 THz is 5.1 $pW/sqrt{Hz}$.
提出了一种集成硅透镜耦合太赫兹直接探测器。它包括一对差分驱动天线耦合HBT晶体管,采用先进的$0.13-mu m$ SiGe HBT技术,$f_{T}/f_{max}$频率为350/550 GHz,采用共基配置。基于天线探测器协同设计方法,在220 GHz ~ 1 THz测量波段实现了光噪声等效功率(NEP)低于40 $pW/sqrt{Hz}$的宽带运行。检测器工作在电压模式读出,外部电阻为1.83 $kOmega$。研究了两个器件区域。在正向有源模式下,检测器在292 GHz时的最小NEP值为1.9 $pW/sqrt{Hz}$,在100 kHz斩波频率下,在275至525 GHz范围内的值小于4.3 $pW/sqrt{Hz}$。最大电压响应度$(R_{v})$分别为9 $kV/W$和7.5 $kV/W$左右。在饱和区域,从220 GHz到1 THz测量到的最小NEP为5.1 $pW/sqrt{Hz}$。
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引用次数: 8
EuMIC 2019 Book of Abstracts EuMIC 2019摘要书
Pub Date : 2019-09-01 DOI: 10.23919/eumic.2019.8909577
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引用次数: 0
An Inductorless 60GHz Down-Conversion Mixer in 22nm FD-SOI CMOS Technology 采用22nm FD-SOI CMOS技术的无电感60GHz下变频混频器
Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909566
P. V. Testa, V. Riess, C. Carta, F. Ellinger
This paper presents an inductorless 60GHz down-conversion mixer integrated in a 22nm FD-SOI CMOS technology. The mixer is based on a single-balanced architecture followed by a common-source output buffer, and it performs a zero-IF conversion with –3dB corner frequency at 1GHz. The maximum differential single-side-band (SSB) conversion gain is 6dB, in agreement with simulation and circuit analysis. The required LO power is –4dBm, while the dissipated power is 18mW. The silicon footprint is 0.05mm2, which to the knowledge of the authors is the smallest reported so far for down-conversion mixers operating at 60GHz, with a factor 3 of improvement.
本文介绍了一种采用22nm FD-SOI CMOS技术集成的无电感60GHz下变频混频器。混频器基于单平衡架构,然后是一个共源输出缓冲器,它在1GHz时以-3dB的角频率执行零中频转换。最大差分单边带(SSB)转换增益为6dB,与仿真和电路分析结果一致。所需LO功率为-4dBm,耗散功率为18mW。硅占地面积为0.05mm2,据作者所知,这是迄今为止报道的60GHz下变频混频器中最小的,改进系数为3。
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引用次数: 2
Effective Resistivity Extraction of Low-Loss Silicon Substrate at Millimeter-Wave Frequencies 毫米波下低损耗硅衬底的有效电阻率提取
Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909575
L. Nyssens, M. Rack, J. Raskin
The effective resistivity $(rho_{eff})$ is a Figure of merit commonly used to compare the RF performance of a substrate from the measurements of CPW lines. For highly resistive substrates, such as the trap-rich substrate, the extracted $rho_{eff}$ decreases by several orders of magnitude at millimeter-wave frequencies. The explanation for this decay is twofold. First, the original expression of $rho_{eff}$ does not include dielectric losses. Second, the imaginary part of the characteristic impedance $(mathfrak{J}(Z_{c}))$ is not well extracted, which leads to an incorrect separation of the total losses among the metal and substrate losses. This paper solves both issues by presenting a new procedure to extract $rho_{eff}$ and the dielectric losses simultaneously and by introducing a novel method to correct $mathfrak{J}(Z_{c})$. Finally, it is shown that this extraction method enables the correct extraction of substrate parameters up to 220 GHz.
有效电阻率$(rho_{eff})$是一种通常用于比较基片射频性能的优值,来自CPW线的测量结果。对于高阻衬底,如富含陷阱的衬底,在毫米波频率下提取的$rho_{eff}$降低了几个数量级。对这种衰减的解释有两个方面。首先,$rho_{eff}$的原始表达式不包括介电损耗。其次,特征阻抗$(mathfrak{J}(Z_{c}))$的虚部没有很好地提取,这导致金属和衬底损耗之间的总损耗分离不正确。本文提出了一种同时提取$rho_{eff}$和介电损耗的新方法,并引入了一种校正$mathfrak{J}(Z_{c})$的新方法,解决了这两个问题。最后表明,该提取方法能够正确提取高达220 GHz的衬底参数。
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引用次数: 5
[EuMIC 2019 The End of Indexes Page] [EuMIC 2019索引结束页]
Pub Date : 2019-09-01 DOI: 10.23919/eumic.2019.8909521
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引用次数: 0
High-Reliability Active Integrated Power Limiter with Sharp Compression Profile in Ka-Band in 130 nm SiGe Technology 高可靠性有源集成功率限幅器,在130纳米SiGe技术中具有ka波段的锐利压缩轮廓
Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909462
Manuel Potércau, N. Deltimple, A. Ghiotto, O. Jardel, S. Rochette, H. Leblond, J. Villemazet
A power limiter with high input power handling (24 dB over the input compression point) and sharp compression profile (less than 1.5 dB between the output 1-dB compression point and the output saturated power) in Ka-band (17.3 GHz; 20.2 GHz) is presented in this paper. Moreover, the circuit shows a low phase distortion (<3°) which make it suitable for use in an analog pre-processing linearizing system. This performances are obtained thanks to a novel architecture based on a power amplifier topology. This work presents the architecture along with the design methodology. Reliability is studied at high input power condition using the safe operation area from the technology provider. Then, a prototype is designed on 130 nm BiCMOS technology from STMicroelectronics, measured and compared to the simulation and the state of art.
在ka频段(17.3 GHz)具有高输入功率处理(输入压缩点超过24 dB)和锐利压缩曲线(输出1-dB压缩点与输出饱和功率之间小于1.5 dB)的功率限制器;20.2 GHz),本文提出。此外,该电路显示出低相位失真(<3°),使其适合用于模拟预处理线性化系统。这种性能得益于基于功率放大器拓扑结构的新型结构。这项工作展示了体系结构以及设计方法。利用技术供应商提供的安全操作区域,研究了高输入功率条件下的可靠性。然后,采用意法半导体公司的130 nm BiCMOS技术设计了原型机,并对其进行了仿真和比较。
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引用次数: 0
A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology 采用130纳米SiGe BiCMOS技术的18dbm g波段功率放大器
Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909410
Abdul Ali, P. Colantonio, F. Giannini, D. Kissinger, H. Ng, J. Yun
This paper presents a four-way combined G-band power amplifier (PA) using a 130-nm SiGe BiCMOS technology. A 185-GHz three-stage single-ended PA based on cascode topology with two driver stages and a power stage is designed. To combine output power of four single-ended PAs, a low-loss four-way reactive power combiner is designed. The developed PA shows a saturated output power of 18.1 dBm with peak gain of 25.9 dB and PAE of 3.5 % at 185 GHz. In addition, the PA provides a 3 dB and 6 dB bandwidth of 27 GHz and 42 GHz, respectively. To the best of our knowledge, the measured power reported in this paper is the highest for SiGe BiCMOS PAs in G-band.
提出了一种采用130纳米SiGe BiCMOS技术的四路组合g波段功率放大器。设计了一种基于级联码拓扑的185ghz三级单端PA,具有两个驱动级和一个功率级。设计了一种低损耗四路无功合成器,实现了4个单端放大器输出功率的合成器。该放大器在185 GHz时的饱和输出功率为18.1 dBm,峰值增益为25.9 dB, PAE为3.5%。此外,PA还提供3db和6db带宽,分别为27ghz和42ghz。据我们所知,本文报告的测量功率是g波段SiGe BiCMOS PAs的最高功率。
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引用次数: 7
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2019 14th European Microwave Integrated Circuits Conference (EuMIC)
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