Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493866
A. Hastings
The availability of high-performance bipolar and MOSFET transistors upon the same substrate offers substantial advantages to the linear designer. NPN pulse power transistors combined with MOSFET predrive circuitry yield a high-performance gate driver that requires no DC bias current. Similarly, the availability of NPN transistors allows the use of translinear circuitry for analog computation. A SMPS control IC, incorporating gate drive and current limit circuitry that makes use of these advantages for a BiCMOS synchronously rectified buck switch-mode power supply, is described.
{"title":"Integrated MOSFET interface for a synchronously-rectified SMPS","authors":"A. Hastings","doi":"10.1109/BIPOL.1995.493866","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493866","url":null,"abstract":"The availability of high-performance bipolar and MOSFET transistors upon the same substrate offers substantial advantages to the linear designer. NPN pulse power transistors combined with MOSFET predrive circuitry yield a high-performance gate driver that requires no DC bias current. Similarly, the availability of NPN transistors allows the use of translinear circuitry for analog computation. A SMPS control IC, incorporating gate drive and current limit circuitry that makes use of these advantages for a BiCMOS synchronously rectified buck switch-mode power supply, is described.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128060815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493876
K. Koike, K. Kawai, A. Onozawa, Y. Kobayashi, H. Ichino
A low-power Gbit/s operating bipolar standard cell LSI design methodology is described. It features a performance-driven layout, highly accurate static timing analysis, and CAD-based optimization for power dissipation. A 5.6-k-gate SDH signal-processing LSI operates at 1.6 Gbit/s with only 3.9 W power consumption.
{"title":"Low-power design methodology for Gbit/s bipolar LSIs","authors":"K. Koike, K. Kawai, A. Onozawa, Y. Kobayashi, H. Ichino","doi":"10.1109/BIPOL.1995.493876","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493876","url":null,"abstract":"A low-power Gbit/s operating bipolar standard cell LSI design methodology is described. It features a performance-driven layout, highly accurate static timing analysis, and CAD-based optimization for power dissipation. A 5.6-k-gate SDH signal-processing LSI operates at 1.6 Gbit/s with only 3.9 W power consumption.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121061561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493868
T. Mills, F. Hebert
A family of monolithic CRT drivers has been fabricated on a new high-speed complementary high-voltage process. An example is the LM2406 CRT driver which achieves 40 volt p-p swings in less than 9.5 nsec into 12 pF loads.
{"title":"A triple-channel 90 V high-speed monolithic CRT driver circuit","authors":"T. Mills, F. Hebert","doi":"10.1109/BIPOL.1995.493868","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493868","url":null,"abstract":"A family of monolithic CRT drivers has been fabricated on a new high-speed complementary high-voltage process. An example is the LM2406 CRT driver which achieves 40 volt p-p swings in less than 9.5 nsec into 12 pF loads.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121070050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493881
L. Vempati, J. Cressler, J. Babcock, R. Jaeger, D. Harame
In this work we present the first comprehensive investigation of the low-frequency noise characteristics of an advanced epitaxial Si- and SiGe-base bipolar technology grown by the UHV/CVD technique. The magnitude of the 1/f noise is comparable for SiGe HBTs and Si BJTs for identical bias, geometry, and temperature, indicating that the use of thermodynamically stable SiGe strained-layers does not degrade transistor noise performance. In some of the Si and SiGe samples we have observed random telegraph signals (RTS) associated with excess generation-recombination (G/R) noise. Temperature measurements have been made to extract activation energies of the associated G/R centers.
{"title":"Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors","authors":"L. Vempati, J. Cressler, J. Babcock, R. Jaeger, D. Harame","doi":"10.1109/BIPOL.1995.493881","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493881","url":null,"abstract":"In this work we present the first comprehensive investigation of the low-frequency noise characteristics of an advanced epitaxial Si- and SiGe-base bipolar technology grown by the UHV/CVD technique. The magnitude of the 1/f noise is comparable for SiGe HBTs and Si BJTs for identical bias, geometry, and temperature, indicating that the use of thermodynamically stable SiGe strained-layers does not degrade transistor noise performance. In some of the Si and SiGe samples we have observed random telegraph signals (RTS) associated with excess generation-recombination (G/R) noise. Temperature measurements have been made to extract activation energies of the associated G/R centers.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126112074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493888
M. Altmann, B. Guay
An integrated 155 Mb/s twisted pair transceiver with linear pulse shaping and equalization filters, clock recovery, and digital data decoding is implemented in a 0.8 /spl mu/m BiCMOS process. Die area is 18.4 k mil/sup 2/, with P/sub DISS/ of 1.3 W at 5 V.
{"title":"A 155.52 Mb/s BiCMOS twisted-pair transceiver","authors":"M. Altmann, B. Guay","doi":"10.1109/BIPOL.1995.493888","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493888","url":null,"abstract":"An integrated 155 Mb/s twisted pair transceiver with linear pulse shaping and equalization filters, clock recovery, and digital data decoding is implemented in a 0.8 /spl mu/m BiCMOS process. Die area is 18.4 k mil/sup 2/, with P/sub DISS/ of 1.3 W at 5 V.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130891750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493880
G. Hurkx, P. Baltus, J.A.M. de Boet, J.A.M. Geelen, J. Hageraats
pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated.
{"title":"The pn-junction as an inductive design component in silicon IC processes","authors":"G. Hurkx, P. Baltus, J.A.M. de Boet, J.A.M. Geelen, J. Hageraats","doi":"10.1109/BIPOL.1995.493880","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493880","url":null,"abstract":"pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134092326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493871
D. T. Zweidinger, R. Fox, S. Lee, T. Jung
A method is presented for extracting the temperature dependences of bipolar transistor terminal currents, while cancelling effects of self-heating. The method allows extraction at high currents where simple models fail. Results can also be used to extract thermal impedance to model self-heating in suitably modified circuit simulators.
{"title":"Extraction of thermal parameters for bipolar circuit simulation","authors":"D. T. Zweidinger, R. Fox, S. Lee, T. Jung","doi":"10.1109/BIPOL.1995.493871","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493871","url":null,"abstract":"A method is presented for extracting the temperature dependences of bipolar transistor terminal currents, while cancelling effects of self-heating. The method allows extraction at high currents where simple models fail. Results can also be used to extract thermal impedance to model self-heating in suitably modified circuit simulators.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133728952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493869
W. Kloosterman, J.A.M. Geelen, D. Klaassen
A very fast, robust and accurate parameter extraction method for bipolar compact models has been developed. Using a combination of simplified expressions and selected measurements the iterative solution of the full model equations (e.g. using a circuit simulator) is avoided. The method is applied to the bipolar compact model MEXTRAM.
{"title":"Efficient parameter extraction for the MEXTRAM model","authors":"W. Kloosterman, J.A.M. Geelen, D. Klaassen","doi":"10.1109/BIPOL.1995.493869","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493869","url":null,"abstract":"A very fast, robust and accurate parameter extraction method for bipolar compact models has been developed. Using a combination of simplified expressions and selected measurements the iterative solution of the full model equations (e.g. using a circuit simulator) is avoided. The method is applied to the bipolar compact model MEXTRAM.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115671375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493897
Craig Hutchinson, Michael Frank, Kevin Negus, Hewlett Packard
A silicon monolithic downconverter designed for consumer satellite television receivers operating from 10.7 to 12.7 GHz has been developed. The downconverter includes a double balanced mixer, oscillator, IF filter, two stage IF amplifier, and a double pole single throw switch. The chip is housed in an internally designed 16 lead dual in line plastic package. The unit provides 13 dB of conversion gain and a phase noise of 105 dBc/Hz at a 10 kHz offset when used with an external dielectric resonator. The IC requires a single 5 volt supply and draws 30 mA.
{"title":"Silicon bipolar 12 GHz downconverter for satellite receivers","authors":"Craig Hutchinson, Michael Frank, Kevin Negus, Hewlett Packard","doi":"10.1109/BIPOL.1995.493897","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493897","url":null,"abstract":"A silicon monolithic downconverter designed for consumer satellite television receivers operating from 10.7 to 12.7 GHz has been developed. The downconverter includes a double balanced mixer, oscillator, IF filter, two stage IF amplifier, and a double pole single throw switch. The chip is housed in an internally designed 16 lead dual in line plastic package. The unit provides 13 dB of conversion gain and a phase noise of 105 dBc/Hz at a 10 kHz offset when used with an external dielectric resonator. The IC requires a single 5 volt supply and draws 30 mA.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115930845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493867
H. Mantooth
A new commercially available diode model is described. This unified model is capable of simulating the widest range of diode technologies of any commercially available. The model's extensive features and flexibility in the different domains of operation are briefly described, but the emphasis of this paper is on describing the thermal capabilities of the model which are of particular interest in power applications.
{"title":"A unified diode model with self-heating effects","authors":"H. Mantooth","doi":"10.1109/BIPOL.1995.493867","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493867","url":null,"abstract":"A new commercially available diode model is described. This unified model is capable of simulating the widest range of diode technologies of any commercially available. The model's extensive features and flexibility in the different domains of operation are briefly described, but the emphasis of this paper is on describing the thermal capabilities of the model which are of particular interest in power applications.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129194584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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