Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493900
S. Pendharkar, K. Shenai
This paper compares the turn-on performance of a vertical p-i-n diode and IGBT, under zero-voltage switching (ZVS). Although both the devices are "conductivity modulated" during turn-on, the IGBT carrier dynamics distinctly differ from that of a p-i-n diode. It is shown that, for identical drift region parameters, the conductivity modulation in IGBT is significantly lower compared to that in a p-i-n rectifier mainly because of carrier flow constraints in the IGBT and its inherent bipolar transistor-like nature. Two-dimensional (2D) mixed device and circuit simulations are performed to understand the behavior of the two devices during turn-on under ZVS.
{"title":"A critique of the turn-on physics of power bipolar devices","authors":"S. Pendharkar, K. Shenai","doi":"10.1109/BIPOL.1995.493900","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493900","url":null,"abstract":"This paper compares the turn-on performance of a vertical p-i-n diode and IGBT, under zero-voltage switching (ZVS). Although both the devices are \"conductivity modulated\" during turn-on, the IGBT carrier dynamics distinctly differ from that of a p-i-n diode. It is shown that, for identical drift region parameters, the conductivity modulation in IGBT is significantly lower compared to that in a p-i-n rectifier mainly because of carrier flow constraints in the IGBT and its inherent bipolar transistor-like nature. Two-dimensional (2D) mixed device and circuit simulations are performed to understand the behavior of the two devices during turn-on under ZVS.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130089080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493896
D. Martin, A. Konczykowska
In this paper an optical gates matrix driver suitable for 2.5 GBit/s ATM switching networks is described. It enables gate switching with typical current up to 150 mA in less than 200 ps. Circuit was realised using a 50 GHz baseline GaAs-GaAlAs heterojunction bipolar transistor (HBT) technology with low power and high speed concurrent objectives.
{"title":"High speed low power optical gate driver for 2.5 GBit/s ATM switching networks","authors":"D. Martin, A. Konczykowska","doi":"10.1109/BIPOL.1995.493896","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493896","url":null,"abstract":"In this paper an optical gates matrix driver suitable for 2.5 GBit/s ATM switching networks is described. It enables gate switching with typical current up to 150 mA in less than 200 ps. Circuit was realised using a 50 GHz baseline GaAs-GaAlAs heterojunction bipolar transistor (HBT) technology with low power and high speed concurrent objectives.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132874240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493879
Michael Case, Sigfried Knorr, Lawrence Larson, Dave Rensch, David Harame, Bernard, Meyerson, Steven Rosenbaum
The design and measurements demonstrating a high-sensitivity static 1/128 frequency divider operating to 23 GHz implemented in a manufacturable Si/SiGe HBT process are presented.
{"title":"A 23 GHz static 1/128 frequency divider implemented in a manufacturable Si/SiGe HBT process","authors":"Michael Case, Sigfried Knorr, Lawrence Larson, Dave Rensch, David Harame, Bernard, Meyerson, Steven Rosenbaum","doi":"10.1109/BIPOL.1995.493879","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493879","url":null,"abstract":"The design and measurements demonstrating a high-sensitivity static 1/128 frequency divider operating to 23 GHz implemented in a manufacturable Si/SiGe HBT process are presented.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116178554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493864
Peter K. Jeffery, David K Ford, Peter P. Pham, M. C. Reed, Nandini Srinivasan, B. Weir
This paper discusses the architecture, logic design, and circuit design of the Autobahn Spanceiver-a serializing transceiver IC that facilitates movement of arbitrarily large blocks of 32-bit parallel TTL data at data rates up to 200 MBytes/sec, between two or more nodes on a shared, controlled-impedance, half-duplex, 1.8 Gbit/sec, differential-PECL serial channel.
{"title":"The architecture, logic, and circuit design of a bipolar, 200 Mbyte/sec, serializing data mover IC, with 32-bit TTL-compatible parallel I/O and unique 1.8 Gbit/sec 'cutoff driver' differential PECL serial I/O","authors":"Peter K. Jeffery, David K Ford, Peter P. Pham, M. C. Reed, Nandini Srinivasan, B. Weir","doi":"10.1109/BIPOL.1995.493864","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493864","url":null,"abstract":"This paper discusses the architecture, logic design, and circuit design of the Autobahn Spanceiver-a serializing transceiver IC that facilitates movement of arbitrarily large blocks of 32-bit parallel TTL data at data rates up to 200 MBytes/sec, between two or more nodes on a shared, controlled-impedance, half-duplex, 1.8 Gbit/sec, differential-PECL serial channel.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"283 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122962255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493865
M. Corsi
In integrated circuits it is often required to devise some scheme to measure or limit current in a power transistor. By using the properties of bipolar transistors several simple circuits can be manufactured that enable accurate sensing of transistor current without the usual bandwidth limitations.
{"title":"Current sensing schemes for use in BiCMOS integrated circuits","authors":"M. Corsi","doi":"10.1109/BIPOL.1995.493865","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493865","url":null,"abstract":"In integrated circuits it is often required to devise some scheme to measure or limit current in a power transistor. By using the properties of bipolar transistors several simple circuits can be manufactured that enable accurate sensing of transistor current without the usual bandwidth limitations.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128883884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-02DOI: 10.1109/BIPOL.1995.493901
H.H. Li, K. Shenai
This paper studies the voltage sharing mechanism for series operation of high power modules. It is shown that the device mis-match is the main cause for the voltage unbalance and junction temperature unbalance during the conduction state. A 2D mixed device and circuit simulator was used to extract the resistances of the bonding pads and of bonding wires inside the module. Moreover, the device internal resistance profile was extracted and the mechanism of voltage sharing is explained. It is found that the junction of P-base and N-drift region gives rises to the major contribution to the negative temperature coefficient of IGBTs at elevated ambient temperatures. Because of the characteristics of negative temperature coefficient at low current density, voltage unbalance was aggravated at high junction temperature. The understanding of this mechanism provides a good insight to circuit and device designers and help to minimize the series unbalance in high power IGBT modules.
{"title":"Simulation prototyping of high power modules","authors":"H.H. Li, K. Shenai","doi":"10.1109/BIPOL.1995.493901","DOIUrl":"https://doi.org/10.1109/BIPOL.1995.493901","url":null,"abstract":"This paper studies the voltage sharing mechanism for series operation of high power modules. It is shown that the device mis-match is the main cause for the voltage unbalance and junction temperature unbalance during the conduction state. A 2D mixed device and circuit simulator was used to extract the resistances of the bonding pads and of bonding wires inside the module. Moreover, the device internal resistance profile was extracted and the mechanism of voltage sharing is explained. It is found that the junction of P-base and N-drift region gives rises to the major contribution to the negative temperature coefficient of IGBTs at elevated ambient temperatures. Because of the characteristics of negative temperature coefficient at low current density, voltage unbalance was aggravated at high junction temperature. The understanding of this mechanism provides a good insight to circuit and device designers and help to minimize the series unbalance in high power IGBT modules.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126157949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：