Gustavo Alvarez-Suarez, Alex J. Lopez-Garcia, Pau Estarlich, Jose Miguel Asensi, Gerard Masmitjà, Pablo Ortega, Cristobal Voz, Joaquim Puigdollers, Alejandro Pérez Rodríguez
Transparent photovoltaic (TPV) devices represent a promising advance in photovoltaic technologies, particularly in building-integrated photovoltaics (BIPV). Unlike conventional photovoltaics, which primarily prioritize efficiency, TPV must balance between efficiency, transparency, and aesthetics. These additional dimensions introduce unique challenges on device architecture. This article reports the development of wide-bandgap, inorganic-based TPV devices integrating ultrathin hydrogenated amorphous silicon (a-Si:H) as a transparent absorber, with carrier selective contacts and transparent electrodes. The article analyzes how absorber thickness influences the electrical, optical, and aesthetic performance of devices, evaluating key parameters in TPV such as light utilization efficiency (LUE), average photopic transmittance (APT), color rendering index (CRI), and electrical properties such as power conversion efficiency (PCE). The device structure is SLG/FTO/AZO/a-SiCx(n)/a-Si:H/V2Ox/AZO. This approach results in PCE ranging from 1.7% with an APT of 60% to a PCE of 4.1% with an APT of 28%, yielding LUE values between 0.9% and 1.3%. Device characterization encompasses optical spectrophotometry, J–V measurements under standard test conditions, spectral response analysis, and variable illumination measurements (VIM). Additionally, color characterization is conducted using CIE 1931 color space maps to determine the chromaticity coordinates, CRI, and the variation of color as a function of absorber thickness.
{"title":"Exploring the Limits and Balancing Efficiency, Transparency, and Esthetics in Ultrathin a-Si:H Transparent Photovoltaic Devices","authors":"Gustavo Alvarez-Suarez, Alex J. Lopez-Garcia, Pau Estarlich, Jose Miguel Asensi, Gerard Masmitjà, Pablo Ortega, Cristobal Voz, Joaquim Puigdollers, Alejandro Pérez Rodríguez","doi":"10.1002/solr.202400816","DOIUrl":"https://doi.org/10.1002/solr.202400816","url":null,"abstract":"<p>\u0000Transparent photovoltaic (TPV) devices represent a promising advance in photovoltaic technologies, particularly in building-integrated photovoltaics (BIPV). Unlike conventional photovoltaics, which primarily prioritize efficiency, TPV must balance between efficiency, transparency, and aesthetics. These additional dimensions introduce unique challenges on device architecture. This article reports the development of wide-bandgap, inorganic-based TPV devices integrating ultrathin hydrogenated amorphous silicon (a-Si:H) as a transparent absorber, with carrier selective contacts and transparent electrodes. The article analyzes how absorber thickness influences the electrical, optical, and aesthetic performance of devices, evaluating key parameters in TPV such as light utilization efficiency (LUE), average photopic transmittance (APT), color rendering index (CRI), and electrical properties such as power conversion efficiency (PCE). The device structure is SLG/FTO/AZO/a-SiC<sub><i>x</i></sub>(<i>n</i>)/a-Si:H/V<sub>2</sub>O<sub><i>x</i></sub>/AZO. This approach results in PCE ranging from 1.7% with an APT of 60% to a PCE of 4.1% with an APT of 28%, yielding LUE values between 0.9% and 1.3%. Device characterization encompasses optical spectrophotometry, J–V measurements under standard test conditions, spectral response analysis, and variable illumination measurements (VIM). Additionally, color characterization is conducted using CIE 1931 color space maps to determine the chromaticity coordinates, CRI, and the variation of color as a function of absorber thickness.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 3","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202400816","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143248952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tonghui Hu, Chen Yu, Ruixi Luo, Xin Zhao, Ren Yu, Jie Wu, Yanping Huo, Ning Cai
Delicate regulation of halogens in conjugated molecules has emerged as a major strategy to modulate the aggregation of organic semiconductor materials for considerable enhancement of photovoltaic performance. Herein, three donor–π–donor hole-transporting materials, B6P6-F, B6P6-Cl, and B6P6-Br, containing 4,8-bis(hexyloxy)benzo[1,2-b:4,5-b′]dithiophene as a π-conjugated linker and 10-(6-fluorohexyl)-10H-phenoxazine, 10-(6-chlorohexyl)-10H-phenoxazine, and 10-(6-bromohexyl)-10H-phenoxazine respectively, as donor units, are reported. Differential scanning calorimetry curves, atomic force microscopy, and contact angle measurements with perovskite precursors collectively reveal that the halogenated alkyl chains attached to the donor units influence molecular packing patterns and subsequently alter the surface and interface properties of the resulting films. Analysis of Fourier-transform infrared absorption spectra implies that distinctive aggregation properties of B6P6-F may originate from its intermolecular F···π interactions. Benefiting from the F···π interactions and favorable self-assembly, the inverted PSCs based on B6P6-F exhibit a decent power conversion efficiency of 20.85%, outperforming that of B6P6-Cl and B6P6-Br. Further analysis of steady-state/transient photoluminescence spectra, electrochemical impedance spectroscopy, light intensity-dependent short-circuit photocurrent, and open-circuit voltage (Voc) indicates that the distinct assembly of B6P6-F, facilitated by intermolecular F···π interactions, enhances efficient interfacial charge transport and extraction while suppressing unfavorable charge recombination, thereby increasing Voc and fill factor.
{"title":"Alkyl Fluoride Modification-Enhanced Intermolecular Interactions of Phenoxazine-Based Hole-Transporting Materials for Efficient and Stable Inverted Perovskite Solar Cells","authors":"Tonghui Hu, Chen Yu, Ruixi Luo, Xin Zhao, Ren Yu, Jie Wu, Yanping Huo, Ning Cai","doi":"10.1002/solr.202400795","DOIUrl":"https://doi.org/10.1002/solr.202400795","url":null,"abstract":"<p>\u0000Delicate regulation of halogens in conjugated molecules has emerged as a major strategy to modulate the aggregation of organic semiconductor materials for considerable enhancement of photovoltaic performance. Herein, three donor–π–donor hole-transporting materials, <b>B</b><sub><b>6</b></sub><b>P</b><sub><b>6</b></sub><b>-F</b>, <b>B</b><sub><b>6</b></sub><b>P</b><sub><b>6</b></sub><b>-Cl,</b> and <b>B</b><sub><b>6</b></sub><b>P</b><sub><b>6</b></sub><b>-Br</b>, containing 4,8-bis(hexyloxy)benzo[1,2-b:4,5-b′]dithiophene as a π-conjugated linker and 10-(6-fluorohexyl)-10<i>H</i>-phenoxazine, 10-(6-chlorohexyl)-10<i>H</i>-phenoxazine, and 10-(6-bromohexyl)-10<i>H</i>-phenoxazine respectively, as donor units, are reported. Differential scanning calorimetry curves, atomic force microscopy, and contact angle measurements with perovskite precursors collectively reveal that the halogenated alkyl chains attached to the donor units influence molecular packing patterns and subsequently alter the surface and interface properties of the resulting films. Analysis of Fourier-transform infrared absorption spectra implies that distinctive aggregation properties of <b>B</b><sub><b>6</b></sub><b>P</b><sub><b>6</b></sub><b>-F</b> may originate from its intermolecular F···π interactions. Benefiting from the F···π interactions and favorable self-assembly, the inverted PSCs based on <b>B</b><sub><b>6</b></sub><b>P</b><sub><b>6</b></sub><b>-F</b> exhibit a decent power conversion efficiency of 20.85%, outperforming that of <b>B</b><sub><b>6</b></sub><b>P</b><sub><b>6</b></sub><b>-Cl</b> and <b>B</b><sub><b>6</b></sub><b>P</b><sub><b>6</b></sub><b>-Br</b>. Further analysis of steady-state/transient photoluminescence spectra, electrochemical impedance spectroscopy, light intensity-dependent short-circuit photocurrent, and open-circuit voltage (<i>V</i><sub>oc</sub>) indicates that the distinct assembly of <b>B</b><sub><b>6</b></sub><b>P</b><sub><b>6</b></sub><b>-F</b>, facilitated by intermolecular F···π interactions, enhances efficient interfacial charge transport and extraction while suppressing unfavorable charge recombination, thereby increasing <i>V</i><sub>oc</sub> and fill factor.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 3","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143248950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gisele Alves dos Reis Benatto, Thøger Kari, Rodrigo Del Prado Santamaría, Aysha Mahmood, Liviu Stoicescu, Sergiu Viorel Spataru
Outdoor daylight electroluminescence (EL) and photoluminescence (PL) imaging of photovoltaic (PV) modules for defect and fault detection is of significant interest in the Operations & Maintenance industry. In this method, it is aimed to extend inspection hours to daylight, enhance safety compared to traditional nighttime imaging, and maintain the diagnostic accuracy unique to luminescence imaging. In this research, it is suggested that filtering out sunlight is mandatory, although it overlaps with the solar cell luminescence emission range. Moreover, image processing is required for daylight images to enhance the signal-to-noise ratio (SNR) and ensure optimal image quality under varying solar conditions. In this work, the performance of six optical filter configurations is evaluated using the fast Fourier transform image processing method, with image sequences captured indoors under controlled lighting conditions and outdoors in both overcast and sunny environments. In the results, it is indicated that, for the PV modules studied, filters with a transmission bandwidth of 50–300 nm around the EL spectrum peak provide a sufficiently high SNR and image quality for fault detection and quantification comparable to indoor-quality images. In high-noise scenarios, such as imaging in bright daylight, filters with narrower bandwidths enable the use of wider lens apertures, resulting in the highest-quality EL images in this study.
{"title":"Evaluation of Daylight Filters for Electroluminescence Imaging Inspections of Crystalline Silicon Photovoltaic Modules","authors":"Gisele Alves dos Reis Benatto, Thøger Kari, Rodrigo Del Prado Santamaría, Aysha Mahmood, Liviu Stoicescu, Sergiu Viorel Spataru","doi":"10.1002/solr.202400654","DOIUrl":"https://doi.org/10.1002/solr.202400654","url":null,"abstract":"<p>Outdoor daylight electroluminescence (EL) and photoluminescence (PL) imaging of photovoltaic (PV) modules for defect and fault detection is of significant interest in the Operations & Maintenance industry. In this method, it is aimed to extend inspection hours to daylight, enhance safety compared to traditional nighttime imaging, and maintain the diagnostic accuracy unique to luminescence imaging. In this research, it is suggested that filtering out sunlight is mandatory, although it overlaps with the solar cell luminescence emission range. Moreover, image processing is required for daylight images to enhance the signal-to-noise ratio (SNR) and ensure optimal image quality under varying solar conditions. In this work, the performance of six optical filter configurations is evaluated using the fast Fourier transform image processing method, with image sequences captured indoors under controlled lighting conditions and outdoors in both overcast and sunny environments. In the results, it is indicated that, for the PV modules studied, filters with a transmission bandwidth of 50–300 nm around the EL spectrum peak provide a sufficiently high SNR and image quality for fault detection and quantification comparable to indoor-quality images. In high-noise scenarios, such as imaging in bright daylight, filters with narrower bandwidths enable the use of wider lens apertures, resulting in the highest-quality EL images in this study.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 4","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143513587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Poor crystallinity is a common problem of kesterite absorbers based on non-hydrazine solution method, which obstructs charge transfer and affects photovoltaic performance of the thin-film devices, especially the open-circuit voltage (VOC). Se diffusion is often insufficient during the crystal growth of kesterite absorber, resulting in uneven selenization reaction. Herein, Se molecule is introduced into kesterite precursor film to promote the absorber crystallinity while preventing the formation of a thick Mo(Se,S)2 layer. It is found that after Se-introduction treatment, Se element distributes more uniformly in the absorber film after high-temperature annealing. During selenization, the lower part of the precursor film can easily obtain Se and experience crystallization, thus promoting the crystallization of the whole absorber. As a result, the absorber defects are passivated. According to charge carrier characterization, the carrier lifetime of the device is prolonged due to the reduced carrier recombination centers. Finally, a champion device with the VOC increases by 23 mV, and an efficiency of 12.39% (active area efficiency of 13.57%) is achieved.
{"title":"Spin-Coating Se in Precursor to Improve Absorber Crystallinity and Reduce Defects Enabling 13.57% Efficiency for Kesterite Solar Cells","authors":"Yuanyuan Wang, Jiaqi Wang, Zucheng Wu, Yuena Meng, Jichun Zhu, Dongxing Kou, Wenhui Zhou, Zhengji Zhou, Yafang Qi, Shengjie Yuan, Litao Han, Sixin Wu","doi":"10.1002/solr.202400735","DOIUrl":"https://doi.org/10.1002/solr.202400735","url":null,"abstract":"<p>Poor crystallinity is a common problem of kesterite absorbers based on non-hydrazine solution method, which obstructs charge transfer and affects photovoltaic performance of the thin-film devices, especially the open-circuit voltage (<i>V</i><sub>OC</sub>). Se diffusion is often insufficient during the crystal growth of kesterite absorber, resulting in uneven selenization reaction. Herein, Se molecule is introduced into kesterite precursor film to promote the absorber crystallinity while preventing the formation of a thick Mo(Se,S)<sub>2</sub> layer. It is found that after Se-introduction treatment, Se element distributes more uniformly in the absorber film after high-temperature annealing. During selenization, the lower part of the precursor film can easily obtain Se and experience crystallization, thus promoting the crystallization of the whole absorber. As a result, the absorber defects are passivated. According to charge carrier characterization, the carrier lifetime of the device is prolonged due to the reduced carrier recombination centers. Finally, a champion device with the <i>V</i><sub>OC</sub> increases by 23 mV, and an efficiency of 12.39% (active area efficiency of 13.57%) is achieved.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 3","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143248951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vanessa Arango-Marín, Juan S. Rocha-Ortiz, Tobias Osterrieder, Anastasia Barabash, Andres Osvet, Jonas Wortmann, Thomas Heumüller, Chao Liu, Jens Hauch, Christoph J. Brabec
Aerosol jet printing (AJP) is an effective method for manufacturing organic photovoltaic (OPV) devices for indoor use. Its noncontact deposition, without posttreatment, and high-resolution 3D pattern printing capabilities make it ideal for using functional nanomaterial inks. This study explores ultrasonic AJP (uAJP) atomization to deposit silver nanowires (AgNW) as the top electrode layer (TEL) in OPV devices. The OPV stack is fabricated up to the hole transport layer using high-throughput screening (HTS) methodologies. Different deposition techniques, including spin-coating, blade-coating, and uAJP of AgNW inks, as well as thermal evaporation of silver, are compared. Scanning electron microscopy analysis shows that the E2X AgNW ink formed a compact TEL layer. Combining HTS setups, right selection of interlayers and uAJP method, automated, solution-processed OPV devices with power conversion efficiencies of 9.54% on an active layer of 0.0232 cm2 are achieved, the highest reported for OPV devices using uAJP AgNW inks as top electrodes.
{"title":"Aerosol-Jet-Printed Silver Nanowires as Top Electrodes in Organic Photovoltaic Devices","authors":"Vanessa Arango-Marín, Juan S. Rocha-Ortiz, Tobias Osterrieder, Anastasia Barabash, Andres Osvet, Jonas Wortmann, Thomas Heumüller, Chao Liu, Jens Hauch, Christoph J. Brabec","doi":"10.1002/solr.202400874","DOIUrl":"https://doi.org/10.1002/solr.202400874","url":null,"abstract":"<p>Aerosol jet printing (AJP) is an effective method for manufacturing organic photovoltaic (OPV) devices for indoor use. Its noncontact deposition, without posttreatment, and high-resolution 3D pattern printing capabilities make it ideal for using functional nanomaterial inks. This study explores ultrasonic AJP (uAJP) atomization to deposit silver nanowires (AgNW) as the top electrode layer (TEL) in OPV devices. The OPV stack is fabricated up to the hole transport layer using high-throughput screening (HTS) methodologies. Different deposition techniques, including spin-coating, blade-coating, and uAJP of AgNW inks, as well as thermal evaporation of silver, are compared. Scanning electron microscopy analysis shows that the E2X AgNW ink formed a compact TEL layer. Combining HTS setups, right selection of interlayers and uAJP method, automated, solution-processed OPV devices with power conversion efficiencies of 9.54% on an active layer of 0.0232 cm<sup>2</sup> are achieved, the highest reported for OPV devices using uAJP AgNW inks as top electrodes.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 3","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202400874","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143248906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Solar interfacial evaporation offers a sustainable method to extract fresh water from seawater, but is often constrained by salt accumulation. A 3D-printed hemispherical solar evaporator with integrated open capillary grooves on its surface is introduced to enhance water transport and evaporation. This design creates a vertically nonuniform liquid film, initiating Marangoni flow to facilitate continuous desalination. The evaporator achieves high evaporation rates of 2.768 kg m−2 h−1 for pure water and 2.646 kg m−2 h−1 for 25 wt% saline water upon one-sun solar irradiation. This high performance is attributed to the microporous structure of the capillaries, which supports cluster-based water evaporation and benefits from the lower evaporation enthalpy of seawater. After 15 h of operation, the hemispherical capillary design promotes localized salt crystallization at low concentrations and forms a thin salt film at higher concentrations, surprisingly increasing the evaporation rate. Moreover, the structure effectively removes pollutants, including heavy metals and organic contaminants from wastewater and seawater. This new evaporator could significantly impact wastewater treatment, desalination, and other evaporative applications.
{"title":"3D-Printed Hemispherical Capillaries for Solar Water Evaporation","authors":"Xinzhe Liu, Qingyuan Liu, Zheng Liu, Guohua Liu","doi":"10.1002/solr.202400776","DOIUrl":"https://doi.org/10.1002/solr.202400776","url":null,"abstract":"<p>Solar interfacial evaporation offers a sustainable method to extract fresh water from seawater, but is often constrained by salt accumulation. A 3D-printed hemispherical solar evaporator with integrated open capillary grooves on its surface is introduced to enhance water transport and evaporation. This design creates a vertically nonuniform liquid film, initiating Marangoni flow to facilitate continuous desalination. The evaporator achieves high evaporation rates of 2.768 kg m<sup>−2</sup> h<sup>−1</sup> for pure water and 2.646 kg m<sup>−2</sup> h<sup>−1</sup> for 25 wt% saline water upon one-sun solar irradiation. This high performance is attributed to the microporous structure of the capillaries, which supports cluster-based water evaporation and benefits from the lower evaporation enthalpy of seawater. After 15 h of operation, the hemispherical capillary design promotes localized salt crystallization at low concentrations and forms a thin salt film at higher concentrations, surprisingly increasing the evaporation rate. Moreover, the structure effectively removes pollutants, including heavy metals and organic contaminants from wastewater and seawater. This new evaporator could significantly impact wastewater treatment, desalination, and other evaporative applications.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 3","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143248919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chathuranganie A. M. Senevirathne, Jun Tae Song, Dai Semba, Takato Saito, Kentaro Imaoka, Yuki Fujita, Telugu Bhim Raju, Pangpang Wang, Sunao Yamada, Toshinori Matsushima
Thermal stress significantly impacts the durability of perovskite solar cells (PSCs), as evidenced by severe degradation observed at 85 °C in this study. This degradation is attributed to gold migration through the soft 2,2′,7,7′-tetrakis(N,N-di-4-methoxyphenylamino)-9,9′-spirobifluorene (spiro-MeOTAD) hole transport layer (HTL) into the perovskite layer, driven by gold's low formation energy and diffusion barrier. To mitigate this issue, several vacuum-evaporable hard transition metal oxides as charge extraction interlayers between the gold electrode and the HTL to suppress gold migration are investigated. PSCs incorporating MoO3, V2O5, MoO2, and ReO3 interlayers achieve a power conversion efficiency of ≈20%, comparable to PSCs without interlayers. Notably, these interlayer-equipped PSCs exhibit enhanced thermal durability at 85 °C by effectively suppressing gold migration into the perovskite layer under elevated temperatures, with the MoO2 interlayer also improving durability at 25 °C. These findings offer a promising strategy for fabricating thermally durable PSCs, contributing to the future commercialization of photovoltaic technology.
{"title":"Role of Metal Oxide Interlayers in Preventing Gold Migration in Perovskite Solar Cells","authors":"Chathuranganie A. M. Senevirathne, Jun Tae Song, Dai Semba, Takato Saito, Kentaro Imaoka, Yuki Fujita, Telugu Bhim Raju, Pangpang Wang, Sunao Yamada, Toshinori Matsushima","doi":"10.1002/solr.202400705","DOIUrl":"https://doi.org/10.1002/solr.202400705","url":null,"abstract":"<p>Thermal stress significantly impacts the durability of perovskite solar cells (PSCs), as evidenced by severe degradation observed at 85 °C in this study. This degradation is attributed to gold migration through the soft 2,2′,7,7′-tetrakis(<i>N</i>,<i>N</i>-di-4-methoxyphenylamino)-9,9′-spirobifluorene (spiro-MeOTAD) hole transport layer (HTL) into the perovskite layer, driven by gold's low formation energy and diffusion barrier. To mitigate this issue, several vacuum-evaporable hard transition metal oxides as charge extraction interlayers between the gold electrode and the HTL to suppress gold migration are investigated. PSCs incorporating MoO<sub>3</sub>, V<sub>2</sub>O<sub>5</sub>, MoO<sub>2</sub>, and ReO<sub>3</sub> interlayers achieve a power conversion efficiency of ≈20%, comparable to PSCs without interlayers. Notably, these interlayer-equipped PSCs exhibit enhanced thermal durability at 85 °C by effectively suppressing gold migration into the perovskite layer under elevated temperatures, with the MoO<sub>2</sub> interlayer also improving durability at 25 °C. These findings offer a promising strategy for fabricating thermally durable PSCs, contributing to the future commercialization of photovoltaic technology.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 3","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143248745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kseniia Zagorovskaia, Oleg Trepalin, Ivan Krasionov, Sergey Luchkin, Dmitry V. Krasnikov, Albert G. Nasibulin, Aleksandra G. Boldyreva
Herein, unsubstituted poly-para-xylylene (parylene-N) film as an encapsulation material for MAPbI3 perovskite solar cells (PSCs) is assessed. Unlike more commonly used parylene-C, parylene-N is cheaper and does not contain Cl which makes it a promising encapsulant for perovskite materials. Being deposited by room temperature chemical vapor deposition in a vacuum, 2 mm-thick parylene film stabilizes MAPbI3-based solar cells and inhibits the degradation even under stress test conditions (85 °C in the air). Moreover, the solar cells, encapsulated with the parylene-N film and cover glass, show stable characteristics for over 3800 h in a dark ambient atmosphere, retaining 92% of their initial power conversion efficiency. Such results demonstrate the potential of unsubstituted parylene for PSC stabilization, paving the way for novel and highly stable PSCs.
{"title":"Improved Operational Lifetime of MAPbI3 Solar Cells Encapsulated with Parylene-N","authors":"Kseniia Zagorovskaia, Oleg Trepalin, Ivan Krasionov, Sergey Luchkin, Dmitry V. Krasnikov, Albert G. Nasibulin, Aleksandra G. Boldyreva","doi":"10.1002/solr.202400833","DOIUrl":"https://doi.org/10.1002/solr.202400833","url":null,"abstract":"<p>Herein, unsubstituted poly-para-xylylene (parylene-N) film as an encapsulation material for MAPbI<sub>3</sub> perovskite solar cells (PSCs) is assessed. Unlike more commonly used parylene-C, parylene-N is cheaper and does not contain Cl which makes it a promising encapsulant for perovskite materials. Being deposited by room temperature chemical vapor deposition in a vacuum, 2 mm-thick parylene film stabilizes MAPbI<sub>3</sub>-based solar cells and inhibits the degradation even under stress test conditions (85 °C in the air). Moreover, the solar cells, encapsulated with the parylene-N film and cover glass, show stable characteristics for over 3800 h in a dark ambient atmosphere, retaining 92% of their initial power conversion efficiency. Such results demonstrate the potential of unsubstituted parylene for PSC stabilization, paving the way for novel and highly stable PSCs.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 3","pages":""},"PeriodicalIF":6.0,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143248744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel dibenzofuran-terminated spiro-type hole transport material with extending π-conjugation is designed and developed. The developed spiro-BNF has improved hole mobility and glass transition temperature than spiro-OMeTAD, which also form superior morphology on the perovskite layer. The perovskite solar cells employing spiro-BNF display a power conversion efficiency of 23.65% with greatly enhanced stability. More in article number 2400700, Xuepeng Liu, Songyuan Dai, and co-workers.
{"title":"Enhancing the Performance of Perovskite Solar Cells by Extending the Terminal Conjugation of Spiro-Type Hole Transport Material","authors":"Qian Wang, Yue Cao, Haokai Zhao, Botong Li, Xianfu Zhang, Xihong Ding, Ghadari Rahim, Hui Cao, Xuepeng Liu, Yong Ding, Songyuan Dai","doi":"10.1002/solr.202470241","DOIUrl":"https://doi.org/10.1002/solr.202470241","url":null,"abstract":"<p><b>Perovskite Solar Cells</b>\u0000 </p><p>A novel dibenzofuran-terminated spiro-type hole transport material with extending π-conjugation is designed and developed. The developed spiro-BNF has improved hole mobility and glass transition temperature than spiro-OMeTAD, which also form superior morphology on the perovskite layer. The perovskite solar cells employing spiro-BNF display a power conversion efficiency of 23.65% with greatly enhanced stability. More in article number 2400700, Xuepeng Liu, Songyuan Dai, and co-workers.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"8 24","pages":""},"PeriodicalIF":6.0,"publicationDate":"2024-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202470241","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143253666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The development of inverted all-inorganic perovskite solar cells (PSCs) is limited by the defect-induced nonradiative recombination. Herein, a strategy to enhance the efficiency and stability of p-i-n type CsPbI2Br solar cells by introducing (3-glycidyloxypropyl)trimethoxysilane (GOPTS) into the CsPbI2Br precursor solution is reported. The incorporation of GOPTS significantly reduces voids and grain boundaries in CsPbI2Br films fabricated at low temperatures (150 °C). The alkoxy, epoxy, and ether groups in GOPTS effectively passivate uncoordinated Pb, diminishing the nonradiative recombination centers associated with perovskite defects. Density functional theory simulations suggest that GOPTS increases the vacancy formation energies of Cs and I, leading to the reduced nonradiative recombination. Furthermore, GOPTS mitigates photoinduced phase segregation and further enhances the performance and stability of the PSCs. This modification results in an increase in the power conversion efficiency of the p-i-n type CsPbI2Br solar cells, from 11.83% to 13.32%, when self-assembled monolayers are used as the hole transport layer. This study underscores the potential of silane-based additives in defect passivation for all-inorganic perovskites, providing a viable route for the advancement of high-efficiency CsPbI2Br solar cells.
{"title":"Defect Regulation of Low-Temperature-Processed CsPbI2Br Solar Cells Based on Silane Additives","authors":"Zhan Su, Bo Yu, Yuning Zhang, Huangzhong Yu","doi":"10.1002/solr.202400713","DOIUrl":"https://doi.org/10.1002/solr.202400713","url":null,"abstract":"<p>The development of inverted all-inorganic perovskite solar cells (PSCs) is limited by the defect-induced nonradiative recombination. Herein, a strategy to enhance the efficiency and stability of p-i-n type CsPbI<sub>2</sub>Br solar cells by introducing (3-glycidyloxypropyl)trimethoxysilane (GOPTS) into the CsPbI<sub>2</sub>Br precursor solution is reported. The incorporation of GOPTS significantly reduces voids and grain boundaries in CsPbI<sub>2</sub>Br films fabricated at low temperatures (150 °C). The alkoxy, epoxy, and ether groups in GOPTS effectively passivate uncoordinated Pb, diminishing the nonradiative recombination centers associated with perovskite defects. Density functional theory simulations suggest that GOPTS increases the vacancy formation energies of Cs and I, leading to the reduced nonradiative recombination. Furthermore, GOPTS mitigates photoinduced phase segregation and further enhances the performance and stability of the PSCs. This modification results in an increase in the power conversion efficiency of the p-i-n type CsPbI<sub>2</sub>Br solar cells, from 11.83% to 13.32%, when self-assembled monolayers are used as the hole transport layer. This study underscores the potential of silane-based additives in defect passivation for all-inorganic perovskites, providing a viable route for the advancement of high-efficiency CsPbI<sub>2</sub>Br solar cells.</p>","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 4","pages":""},"PeriodicalIF":6.0,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143513474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}