Backside thinning of SiC wafers is a crucial process for obtaining high-performance SiC devices. However, cracks are highly prone to formation during backside thinning process, which in turn impacts the performance of SiC devices. To eliminate the cracks generated during wafer thinning process, this study investigates the interfacial tribochemical reactions induced by abrasives friction during backside thinning of SiC wafers. The effects of abrasive size, mixed abrasive type, and polishing parameters on interfacial tribochemical reaction were analyzed by characterizing the surface morphology, surface composition, and subsurface damage of polished SiC wafers. Results showed that a tribochemical reaction occurred between diamond abrasives and SiC wafers, and incorporating CeO2 increased the atomic percentage of Si-O bonds by 47.2% compared with pure diamond abrasives. A smooth SiC surface with a roughness of 0.76 nm was obtained under a rotation speed of 1000 rpm and feed rate of 0.3 mm/min, and no cracks were detected on the subsurface. The surface of SiC was amorphized under the mechanical action of diamond abrasives and then reacted with water to form SiO2. This transformation of amorphous SiC into SiO2 could be accelerated by adding CeO2 abrasives, attributed to the high catalytic activity of CeO2.
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