Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.09.56225.136-23
А. П. Орлов, П.И. Голяков, Ю В Власов, П.Б. Репин
The results of studies of a solid-state closing switch for a high-current pulse switching are presented. The experiments were carried out on a laboratory facility with a capacitive energy storage run down a discharge circuit with electrical-explosive opening switch (EEOS) by a current pulse with an amplitude ~450 kA. The discharge circuit consists of two sections separated by a branch with a solid-state closing switch. A metal foil of the EEOS can be located in an interelectrode gap of the closing switch. The operation of the EEOS leads to a breakdown of the insulation of the closing switch, as a result of which an effective shunting of the section of the discharge circuit containing the EEOS occurs. The developed combined solid-state closing switch in the future is capable of providing multi-channel switching of a high-current pulse to the load synchronously with the EEOS operation.
{"title":"Комбинированный твердотельный замыкающий ключ для коммутации сильноточного импульса","authors":"А. П. Орлов, П.И. Голяков, Ю В Власов, П.Б. Репин","doi":"10.21883/jtf.2023.09.56225.136-23","DOIUrl":"https://doi.org/10.21883/jtf.2023.09.56225.136-23","url":null,"abstract":"The results of studies of a solid-state closing switch for a high-current pulse switching are presented. The experiments were carried out on a laboratory facility with a capacitive energy storage run down a discharge circuit with electrical-explosive opening switch (EEOS) by a current pulse with an amplitude ~450 kA. The discharge circuit consists of two sections separated by a branch with a solid-state closing switch. A metal foil of the EEOS can be located in an interelectrode gap of the closing switch. The operation of the EEOS leads to a breakdown of the insulation of the closing switch, as a result of which an effective shunting of the section of the discharge circuit containing the EEOS occurs. The developed combined solid-state closing switch in the future is capable of providing multi-channel switching of a high-current pulse to the load synchronously with the EEOS operation.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78856908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.06.55611.40-23
O. E. Дик, A.Л. Глазов
The task is to determine the indices of phase synchronization between biological data extracted from neuronal activity and fluctuations in blood pressure and respiration, based on the calculation of instantaneous frequencies and phases using the synchrosqueezed wavelet analysis.. Differences in synchronization indices between the analyzed data in two groups of rats (the control group and the group with experimentally induced colitis) were revealed. Pain exposure was found to be associated with frequency adjustment of the variability of the neuronal activity or the blood pressure, followed by the onset of phase synchronization.
{"title":"Синхронизация фаз между временными сигналами, выделенными из биологических данных","authors":"O. E. Дик, A.Л. Глазов","doi":"10.21883/jtf.2023.06.55611.40-23","DOIUrl":"https://doi.org/10.21883/jtf.2023.06.55611.40-23","url":null,"abstract":"The task is to determine the indices of phase synchronization between biological data extracted from neuronal activity and fluctuations in blood pressure and respiration, based on the calculation of instantaneous frequencies and phases using the synchrosqueezed wavelet analysis.. Differences in synchronization indices between the analyzed data in two groups of rats (the control group and the group with experimentally induced colitis) were revealed. Pain exposure was found to be associated with frequency adjustment of the variability of the neuronal activity or the blood pressure, followed by the onset of phase synchronization.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87733961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/JTF.2018.01.45474.2350
Л. Х. Ингель
A linear stationary problem of the response of a semi-bounded stably stratified fluid/gaseous medium to volumetric spatially inhomogeneous heat release in the Boussinesq approximation is theoretically investigated. The most important similarity parameters are the analogue of the Rayleigh number and the aspect ratio of the source of buoyancy. For a perturbation in the form of a single horizontal harmonic, an analytical solution has been found that makes it possible to analyze a number of significant regularities. The nontrivial possibility of an intense hydrothermodynamic response to a weak heat release at a certain ratio of the mentioned parameters is found.
{"title":"Аномальный отклик стратифицированной среды на объемное тепловыделение","authors":"Л. Х. Ингель","doi":"10.21883/JTF.2018.01.45474.2350","DOIUrl":"https://doi.org/10.21883/JTF.2018.01.45474.2350","url":null,"abstract":"A linear stationary problem of the response of a semi-bounded stably stratified fluid/gaseous medium to volumetric spatially inhomogeneous heat release in the Boussinesq approximation is theoretically investigated. The most important similarity parameters are the analogue of the Rayleigh number and the aspect ratio of the source of buoyancy. For a perturbation in the form of a single horizontal harmonic, an analytical solution has been found that makes it possible to analyze a number of significant regularities. The nontrivial possibility of an intense hydrothermodynamic response to a weak heat release at a certain ratio of the mentioned parameters is found.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83849185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.08.55987.37-23
С.В. фон Гратовски, М. И. Жуковская, А. М. Луничкин, А. В. Шеляков, Н. Н. Ситников, В. В. Коледов, К. А. Бородако, С.Ф. Петренко
Insect pest control requires fundamental knowledge of their physiology and behavioral responses. However, due to the small size of insects, in general, and their sensory formations (sensilla), in particular, the study of the physiology of insect sensory systems has until recently been limited by insufficient accuracy and selectivity of experimental mechanical action. To eliminate this gap in the study of insects, a physical technology is proposed based on a micromechanical device - microtweezers based on a layered structural composite of Ti50Ni25Cu25 alloy with a shape memory effect (SME), combined with a temperature control system and a three-coordinate piezoelectric micropositioner. Microtweezers with SME selectively capture the smallest sensilla of the studied insects, enabling their precise mechanical stimulation with simultaneous recording of physiological responses generated by sensilla using methods of impulse derivation in the nerve centers of the insect.
{"title":"Система микроманипулирования сенсиллами насекомых на основе сплава Ti-=SUB=-50-=/SUB=-Ni-=SUB=-25-=/SUB=-Cu-=SUB=-25-=/SUB=- с эффектом памяти формы","authors":"С.В. фон Гратовски, М. И. Жуковская, А. М. Луничкин, А. В. Шеляков, Н. Н. Ситников, В. В. Коледов, К. А. Бородако, С.Ф. Петренко","doi":"10.21883/jtf.2023.08.55987.37-23","DOIUrl":"https://doi.org/10.21883/jtf.2023.08.55987.37-23","url":null,"abstract":"Insect pest control requires fundamental knowledge of their physiology and behavioral responses. However, due to the small size of insects, in general, and their sensory formations (sensilla), in particular, the study of the physiology of insect sensory systems has until recently been limited by insufficient accuracy and selectivity of experimental mechanical action. To eliminate this gap in the study of insects, a physical technology is proposed based on a micromechanical device - microtweezers based on a layered structural composite of Ti50Ni25Cu25 alloy with a shape memory effect (SME), combined with a temperature control system and a three-coordinate piezoelectric micropositioner. Microtweezers with SME selectively capture the smallest sensilla of the studied insects, enabling their precise mechanical stimulation with simultaneous recording of physiological responses generated by sensilla using methods of impulse derivation in the nerve centers of the insect.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87306227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.04.55039.281-22
М. С. Савельев, Павел Николаевич Василевский, Ю. П. Шаман, А.Ю. Толбин, А. Ю. Герасименко, С.В. Селищев
The possibilities of using multivariate determination of carbon nanotubes properties based on the dependence data of the normalized transmission logarithm on the sample displacement in the case of Z-scan with an open aperture as well as on the total pulse energy in the case of fixed sample position measurements are studied. The radiation transfer equation for the threshold dependence of the absorption coefficient on the intensity of a flat-top laser beam is used. The data of physical and computational experiments showed the sensitivity of the measured curves with respect to the values of the constants of the optical and threshold energy fluence, as well as the beam waist radius. The possibility of multivariate determination of the properties of liquid carbon nanotube-based dispersed media with a nonlinear optical threshold effect and beam waist radius inside such samples has been established.
{"title":"Ограничение мощности лазерного излучения углеродными материалами с нелинейным оптическим пороговым эффектом при форме импульса с плоской вершиной","authors":"М. С. Савельев, Павел Николаевич Василевский, Ю. П. Шаман, А.Ю. Толбин, А. Ю. Герасименко, С.В. Селищев","doi":"10.21883/jtf.2023.04.55039.281-22","DOIUrl":"https://doi.org/10.21883/jtf.2023.04.55039.281-22","url":null,"abstract":"The possibilities of using multivariate determination of carbon nanotubes properties based on the dependence data of the normalized transmission logarithm on the sample displacement in the case of Z-scan with an open aperture as well as on the total pulse energy in the case of fixed sample position measurements are studied. The radiation transfer equation for the threshold dependence of the absorption coefficient on the intensity of a flat-top laser beam is used. The data of physical and computational experiments showed the sensitivity of the measured curves with respect to the values of the constants of the optical and threshold energy fluence, as well as the beam waist radius. The possibility of multivariate determination of the properties of liquid carbon nanotube-based dispersed media with a nonlinear optical threshold effect and beam waist radius inside such samples has been established.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89935402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.03.54850.245-22
С.В. Белибихин, Н. Н. Конобеева, М. Б. Белоненко
In this work, we study the evolution of an extremely short pulse in a dielectric crystal with carbon nanotubes containing an impurity with random parameters (energy level, electron hybridization energy). The dependence of the spatial characteristics of the pulse on the impurity parameters and the number of photons taken into account in the model is analyzed.
{"title":"Моделирование динамики предельно коротких оптических импульсов в углеродных нанотрубках со случайными примесями при учете многофотонного поглощения","authors":"С.В. Белибихин, Н. Н. Конобеева, М. Б. Белоненко","doi":"10.21883/jtf.2023.03.54850.245-22","DOIUrl":"https://doi.org/10.21883/jtf.2023.03.54850.245-22","url":null,"abstract":"In this work, we study the evolution of an extremely short pulse in a dielectric crystal with carbon nanotubes containing an impurity with random parameters (energy level, electron hybridization energy). The dependence of the spatial characteristics of the pulse on the impurity parameters and the number of photons taken into account in the model is analyzed.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73628203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.08.55974.98-23
А. Т. Бурков, П. П. Константинов
Electrical resistivity, Seebeck coefficient and Hall coefficient of pure thallium were measured at temperatures from 100 K to 550 K, i.e. almost to the melting temperature of this metal. The history of the experiemental investigations of the transport properties of Tl is shortly reviewed. This is a first publication of the experimental data on the Seebeck coefficient and the Hall coefficient of Tl in such a broad temperature range.
{"title":"Электросопротивление, термоэдс и коэффициент Холла чистого таллия при 100-550 K","authors":"А. Т. Бурков, П. П. Константинов","doi":"10.21883/jtf.2023.08.55974.98-23","DOIUrl":"https://doi.org/10.21883/jtf.2023.08.55974.98-23","url":null,"abstract":"Electrical resistivity, Seebeck coefficient and Hall coefficient of pure thallium were measured at temperatures from 100 K to 550 K, i.e. almost to the melting temperature of this metal. The history of the experiemental investigations of the transport properties of Tl is shortly reviewed. This is a first publication of the experimental data on the Seebeck coefficient and the Hall coefficient of Tl in such a broad temperature range.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79370492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.07.55768.115-23
М. С. Михайленко, А. Е. Пестов, А. К. Чернышев, Николай Иванович Чхало
An alternative material has been proposed as an absorber for a mask blank for lithography in the vicinity of a wavelength of 11.2 nm - Ni. It has been established in this work that the optimal angle for efficient sputtering of Ru, Be, and Ni targets by accelerated argon ion sources for fabrication of a Ru/Be multilayer structure with an upper Ni layer is an angle of 60 degrees. At this angle, the etching rate for all three materials is 35 ± 5 nm/min at an argon ion energy of 800 eV and an ion current density of 0.5 mA/cm2.
{"title":"Изучение угловых зависимостей скоростей ионно-пучкового распыления металлов для синтеза заготовок фотошаблонов","authors":"М. С. Михайленко, А. Е. Пестов, А. К. Чернышев, Николай Иванович Чхало","doi":"10.21883/jtf.2023.07.55768.115-23","DOIUrl":"https://doi.org/10.21883/jtf.2023.07.55768.115-23","url":null,"abstract":"An alternative material has been proposed as an absorber for a mask blank for lithography in the vicinity of a wavelength of 11.2 nm - Ni. It has been established in this work that the optimal angle for efficient sputtering of Ru, Be, and Ni targets by accelerated argon ion sources for fabrication of a Ru/Be multilayer structure with an upper Ni layer is an angle of 60 degrees. At this angle, the etching rate for all three materials is 35 ± 5 nm/min at an argon ion energy of 800 eV and an ion current density of 0.5 mA/cm2.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84408933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.09.56221.145-23
Александр Викторович Ситников, Ю. Е. Калинин, И. В. Бабкина, А.Е. Никонов, М. Н. Копытин, Л. И. Янченко, А. Р. Шакуров
The paper reveals the influence of Li, B and the composition of metal contacts on the processes of resistive switching in memristive structures M/NC/D/M. After field exposure in structures Cu/(Co50Fe50)Х(LiNbO3)100-Х/s-LiNbO3/Cu/sitall, Cu/(Co50Fe50)Х(LiNbO3)100-Х/d-LiNbO3/Cu/sitall and Cu/(Co40Fe40B20)Х(SiO2)100-Х/d-LiNbO3/Cu/sitall at x < 13 at.% was detected a residual voltage (up to 16 mV) due to the electromigration of Li ions, that leading to a "reversible" type of VAC hysteresis and instability of the time dependencies of induced resistive states. In the structures of Cu/(Co40Fe40B20)Х(LiNbO3)100-Х/s-LiNbO3/Cu/sitall, Cr/Cu/Cr/(Co40Fe40B20)Х(LiNbO3)100-Х/s-LiNbO3/Cr/Cu/Cr/sitall containing B, the residual voltage is reduced by formation of chemical compounds B with percolated Li atoms. When limiting the electromigration of Li ions, the main mechanism of resistive switching is the processes of electromigration of oxygen vacancies in the dielectric oxide layer. Suppression of residual voltage in the Cr/Cu/Cr/(Co50Fe50)Х(LiNbO3)100-Х/s-LiNbO3/Cr/Cu/Cr/sitall structure due to the introduction of a Cr buffer layer that does not dissolve Li leads to the absence of bipolar resistive switching in these structures.
{"title":"Влияние ионов Li на мемристорные свойства конденсаторных структур на основе нанокомпозита (Co-=SUB=-40-=/SUB=-Fe-=SUB=-40-=/SUB=-B-=SUB=-20-=/SUB=-)-=SUB=-x-=/SUB=-(LiNbO-=SUB=-3-=/SUB=-)-=SUB=-100-x-=/SUB=-","authors":"Александр Викторович Ситников, Ю. Е. Калинин, И. В. Бабкина, А.Е. Никонов, М. Н. Копытин, Л. И. Янченко, А. Р. Шакуров","doi":"10.21883/jtf.2023.09.56221.145-23","DOIUrl":"https://doi.org/10.21883/jtf.2023.09.56221.145-23","url":null,"abstract":"The paper reveals the influence of Li, B and the composition of metal contacts on the processes of resistive switching in memristive structures M/NC/D/M. After field exposure in structures Cu/(Co50Fe50)Х(LiNbO3)100-Х/s-LiNbO3/Cu/sitall, Cu/(Co50Fe50)Х(LiNbO3)100-Х/d-LiNbO3/Cu/sitall and Cu/(Co40Fe40B20)Х(SiO2)100-Х/d-LiNbO3/Cu/sitall at x < 13 at.% was detected a residual voltage (up to 16 mV) due to the electromigration of Li ions, that leading to a \"reversible\" type of VAC hysteresis and instability of the time dependencies of induced resistive states. In the structures of Cu/(Co40Fe40B20)Х(LiNbO3)100-Х/s-LiNbO3/Cu/sitall, Cr/Cu/Cr/(Co40Fe40B20)Х(LiNbO3)100-Х/s-LiNbO3/Cr/Cu/Cr/sitall containing B, the residual voltage is reduced by formation of chemical compounds B with percolated Li atoms. When limiting the electromigration of Li ions, the main mechanism of resistive switching is the processes of electromigration of oxygen vacancies in the dielectric oxide layer. Suppression of residual voltage in the Cr/Cu/Cr/(Co50Fe50)Х(LiNbO3)100-Х/s-LiNbO3/Cr/Cu/Cr/sitall structure due to the introduction of a Cr buffer layer that does not dissolve Li leads to the absence of bipolar resistive switching in these structures.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82035631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.02.54502.121-22
А А Абдурахимов, А.В. Левандович
The change in the characteristics of a solar battery as a result of a random abrupt change in the properties of individual solar cells, which occurred as a result of a single or systematic impact of adverse factors in near-Earth outer space, is considered. The choice of the calculation scheme for constructing a model of a single solar cell is substantiated. For this situation, analytical mathematical models of typical connections of solar cells have been developed. Using the developed models, the current-voltage and volt-watt characteristics of the solar battery are analyzed in the case of an abrupt decrease in the photocurrent of solar cells with different probabilities. A statistical analysis of the characteristics of damaged solar cells was carried out using simplified logical-analytical models with the introduced circuit loss coefficient. Estimates of the values of the coefficient of circuit losses for typical schemes for connecting solar cells are given.
{"title":"Статистическая оценка характеристик поврежденных солнечных батарей космических аппаратов","authors":"А А Абдурахимов, А.В. Левандович","doi":"10.21883/jtf.2023.02.54502.121-22","DOIUrl":"https://doi.org/10.21883/jtf.2023.02.54502.121-22","url":null,"abstract":"The change in the characteristics of a solar battery as a result of a random abrupt change in the properties of individual solar cells, which occurred as a result of a single or systematic impact of adverse factors in near-Earth outer space, is considered. The choice of the calculation scheme for constructing a model of a single solar cell is substantiated. For this situation, analytical mathematical models of typical connections of solar cells have been developed. Using the developed models, the current-voltage and volt-watt characteristics of the solar battery are analyzed in the case of an abrupt decrease in the photocurrent of solar cells with different probabilities. A statistical analysis of the characteristics of damaged solar cells was carried out using simplified logical-analytical models with the introduced circuit loss coefficient. Estimates of the values of the coefficient of circuit losses for typical schemes for connecting solar cells are given.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79675740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：