Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.04.55048.283-22
П. С. Парфенов, Ю.Г. Корженевский, А. А. Бабаев, А. П. Литвин, А. В. Соколова, Александр Викторович Федоров
FET-based charge carrier mobility measurements in low-conductivity materials, as well as semiconductor materials with a high density of trapping states, such as nanocrystals and polycrystalline films, are highly distorted due to charge accumulation in the transistor structure. In this work, a comparative study of the measurement of the mobility of charge carrier in conductive polymers, nanocrystals and polycrystalline films, using the analysis of output and transfer characteristics, was carried out. It is shown that using output characteristics instead of transfer characteristics for calculating the charge carrier mobility helps to avoid a systematic error in the measurement.
{"title":"Измерение подвижности носителей заряда в образцах с низкой проводимостью методом полевого транзистора с использованием стоковых характеристик","authors":"П. С. Парфенов, Ю.Г. Корженевский, А. А. Бабаев, А. П. Литвин, А. В. Соколова, Александр Викторович Федоров","doi":"10.21883/jtf.2023.04.55048.283-22","DOIUrl":"https://doi.org/10.21883/jtf.2023.04.55048.283-22","url":null,"abstract":"FET-based charge carrier mobility measurements in low-conductivity materials, as well as semiconductor materials with a high density of trapping states, such as nanocrystals and polycrystalline films, are highly distorted due to charge accumulation in the transistor structure. In this work, a comparative study of the measurement of the mobility of charge carrier in conductive polymers, nanocrystals and polycrystalline films, using the analysis of output and transfer characteristics, was carried out. It is shown that using output characteristics instead of transfer characteristics for calculating the charge carrier mobility helps to avoid a systematic error in the measurement.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90423421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.01.54059.110-22
В. И. Зубков, А.В. Соломникова, А. В. Соломонов, А.В. Колядин, J.E. Butler
На базе как результатов собственных исследований, так и работ других авторов проведен критический анализ существующих методов контроля концентрации примесей и основных носителей заряда в широкозонных полупроводниках, а также рассмотрены вопросы совершенствования современной диагностики основных электрофизических свойств монокристаллического алмаза. Установлено, что для полупроводникового алмаза принципиально важным оказывается раздельное определение концентрации примеси и концентрации свободных носителей заряда, что является следствием очень малой (менее 1%) степени ионизации внедренной примеси. Показаны преимущества и перспективность спектроскопии адмиттанса как диагностического метода. При исследовании образцов алмаза, легированных бором, обнаружено уменьшение энергии активации дырок с примесного уровня бора от 325 до 100 meV при увеличении концентрации бора с 2·1016 до 4·1019 cm-3. Сделано предположение, что причиной различия в энергиях активации, получаемых измерениями на постоянном и переменном токе, являются измеряемые соответствующим прибором токи проводимости либо смещения. Для сильно легированных образцов монокристаллического алмаза с концентрацией бора NA≥5·1018 cm-3 при температурах 120-150 K зарегистрирован переход к прыжковому механизму проводимости по примесной (акцепторной) зоне с термической энергией активации 10-20 meV. На базе результатов собственных исследований и работ других авторов проведен критический анализ существующих методов контроля концентрации примеси и основных носителей заряда в широкозонных полупроводниках, а также рассмотрены вопросы совершенствования современной диагностики основных электрофизических свойств монокристаллического алмаза. Установлено, что для полупроводникового алмаза принципиально важным оказывается раздельное определение концентрации примеси и концентрации свободных носителей заряда, что является следствием очень малой (менее 1%) степени ионизации внедренной примеси. Показаны преимущества и перспективность спектроскопии адмиттанса как диагностического метода применительно к сверхширокозонным полупроводникам, предлагаются решения, направленные на корректную интерпретацию экспериментальных данных. Большая энергия ионизации примеси бора в алмазе (370 meV) приводит к сильной частотной дисперсии измеряемой барьерной емкости. Показано, что для корректных измерений концентрации носителей заряда методом ВФХ в условиях нарушения квазистатичности необходимо использование низких частот и высоких температур. Проводится сопоставление результатов электрофизических исследований с традиционными измерениями концентрации примеси в алмазе оптическими методами. При температурных измерениях адмиттанса образцов монокристаллического алмаза, легированного бором, обнаружено уменьшение энергии активации дырок с примесного уровня бора от 325 до 100 meV при увеличении концентрации бора NA с 2·1016 до 4·1019 cm-3, а также при NA≥5·1018 cm-3 при температурах 120-150 K зарегистрирован переход к прыжковому механизму проводимос
{"title":"Характеризация электрофизическими методами монокристаллического алмаза, легированного бором (обзор)","authors":"В. И. Зубков, А.В. Соломникова, А. В. Соломонов, А.В. Колядин, J.E. Butler","doi":"10.21883/jtf.2023.01.54059.110-22","DOIUrl":"https://doi.org/10.21883/jtf.2023.01.54059.110-22","url":null,"abstract":"На базе как результатов собственных исследований, так и работ других авторов проведен критический анализ существующих методов контроля концентрации примесей и основных носителей заряда в широкозонных полупроводниках, а также рассмотрены вопросы совершенствования современной диагностики основных электрофизических свойств монокристаллического алмаза. Установлено, что для полупроводникового алмаза принципиально важным оказывается раздельное определение концентрации примеси и концентрации свободных носителей заряда, что является следствием очень малой (менее 1%) степени ионизации внедренной примеси. Показаны преимущества и перспективность спектроскопии адмиттанса как диагностического метода. При исследовании образцов алмаза, легированных бором, обнаружено уменьшение энергии активации дырок с примесного уровня бора от 325 до 100 meV при увеличении концентрации бора с 2·1016 до 4·1019 cm-3. Сделано предположение, что причиной различия в энергиях активации, получаемых измерениями на постоянном и переменном токе, являются измеряемые соответствующим прибором токи проводимости либо смещения. Для сильно легированных образцов монокристаллического алмаза с концентрацией бора NA≥5·1018 cm-3 при температурах 120-150 K зарегистрирован переход к прыжковому механизму проводимости по примесной (акцепторной) зоне с термической энергией активации 10-20 meV. На базе результатов собственных исследований и работ других авторов проведен критический анализ существующих методов контроля концентрации примеси и основных носителей заряда в широкозонных полупроводниках, а также рассмотрены вопросы совершенствования современной диагностики основных электрофизических свойств монокристаллического алмаза. Установлено, что для полупроводникового алмаза принципиально важным оказывается раздельное определение концентрации примеси и концентрации свободных носителей заряда, что является следствием очень малой (менее 1%) степени ионизации внедренной примеси. Показаны преимущества и перспективность спектроскопии адмиттанса как диагностического метода применительно к сверхширокозонным полупроводникам, предлагаются решения, направленные на корректную интерпретацию экспериментальных данных. Большая энергия ионизации примеси бора в алмазе (370 meV) приводит к сильной частотной дисперсии измеряемой барьерной емкости. Показано, что для корректных измерений концентрации носителей заряда методом ВФХ в условиях нарушения квазистатичности необходимо использование низких частот и высоких температур. Проводится сопоставление результатов электрофизических исследований с традиционными измерениями концентрации примеси в алмазе оптическими методами. При температурных измерениях адмиттанса образцов монокристаллического алмаза, легированного бором, обнаружено уменьшение энергии активации дырок с примесного уровня бора от 325 до 100 meV при увеличении концентрации бора NA с 2·1016 до 4·1019 cm-3, а также при NA≥5·1018 cm-3 при температурах 120-150 K зарегистрирован переход к прыжковому механизму проводимос","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90649300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.02.54505.187-22
Е. В. Рутьков, О. А. Беляева, Николай Ростиславович Галль
Auger electron spectroscopy and thermoresistive methods are used to study the physical processes leading to gas cooling of heated molybdenum filaments in a wide temperature range of 350 - 1300 K and pressures of 760 - 10-3 Torr, corresponding to the operating range of a Pirani-type vacuum sensor. Nitrogen was used as the gas. It is shown that nitrogen atoms chemisorbed on the surface do not contribute to gas cooling, which occurs only due to physisorbed N2 molecules. In the intermediate vacuum region of 10-3 – 1 Torr, the heater is cooled due to the equilibrium between the flux of incident and thermally desorbed molecules, which is well described by the Hertz-Knudsen formula and first-order desorption with an activation energy of ~ 0.55 eV. On the contrary, at high pressures close to atmospheric, this cooling occurs due to the thermal desorption of gas molecules from an almost filled monolayer, which reduces its relative efficiency by many orders of magnitude.
{"title":"Физические процессы в датчике низкого вакуума типа Пирани","authors":"Е. В. Рутьков, О. А. Беляева, Николай Ростиславович Галль","doi":"10.21883/jtf.2023.02.54505.187-22","DOIUrl":"https://doi.org/10.21883/jtf.2023.02.54505.187-22","url":null,"abstract":"Auger electron spectroscopy and thermoresistive methods are used to study the physical processes leading to gas cooling of heated molybdenum filaments in a wide temperature range of 350 - 1300 K and pressures of 760 - 10-3 Torr, corresponding to the operating range of a Pirani-type vacuum sensor. Nitrogen was used as the gas. It is shown that nitrogen atoms chemisorbed on the surface do not contribute to gas cooling, which occurs only due to physisorbed N2 molecules. In the intermediate vacuum region of 10-3 – 1 Torr, the heater is cooled due to the equilibrium between the flux of incident and thermally desorbed molecules, which is well described by the Hertz-Knudsen formula and first-order desorption with an activation energy of ~ 0.55 eV. On the contrary, at high pressures close to atmospheric, this cooling occurs due to the thermal desorption of gas molecules from an almost filled monolayer, which reduces its relative efficiency by many orders of magnitude.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82785833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.07.55761.73-23
Ю.Ю. Балашов, В. Г. Мягков, Л.Е. Быкова, Михаил Н. Волочаев, В. С. Жигалов, А. А. Мацынин, К.А. Галушка, Галина Николаевна Бондаренко, Сергей В. Комогорцев
Study of the mechanisms of the solid-state reactions in Sn/Fe/Cu thin films is interesting both from a fundamental point of view and from a view of the importance of emerging intermetallics in the technology of solder joints and thin-film lithium-ion batteries. By the integrated approach, including both X-ray phase analysis and local elemental analysis of the cross-sections of the films, the phase composition and the mutual arrangement of phases were studied, at various stages of the solid-state reaction occurring at different temperatures. The observed sequence of the appearing phases differs significantly from the expected one if the mass transfer took place by a volume diffusion through the forming layers.
{"title":"Особенности протекания твердофазных реакций в трехслойной пленочной системе Sn/Fe/Cu","authors":"Ю.Ю. Балашов, В. Г. Мягков, Л.Е. Быкова, Михаил Н. Волочаев, В. С. Жигалов, А. А. Мацынин, К.А. Галушка, Галина Николаевна Бондаренко, Сергей В. Комогорцев","doi":"10.21883/jtf.2023.07.55761.73-23","DOIUrl":"https://doi.org/10.21883/jtf.2023.07.55761.73-23","url":null,"abstract":"Study of the mechanisms of the solid-state reactions in Sn/Fe/Cu thin films is interesting both from a fundamental point of view and from a view of the importance of emerging intermetallics in the technology of solder joints and thin-film lithium-ion batteries. By the integrated approach, including both X-ray phase analysis and local elemental analysis of the cross-sections of the films, the phase composition and the mutual arrangement of phases were studied, at various stages of the solid-state reaction occurring at different temperatures. The observed sequence of the appearing phases differs significantly from the expected one if the mass transfer took place by a volume diffusion through the forming layers.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":"34 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83542267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.08.55978.101-23
Н.И. Бочкарева, Ю.Г. Шретер
Schottky barriers on GaN is considered on the basis of an analysis of the features of the current-voltage characteristics of Ni/n-GaN diodes. It is found that the forward I–V characteristics on a semilogarithmic scale have the form of curves with steps at biases corresponding to the Gaussian bands of localized states of defects in the GaN band gap. It is shown that the experimental current-voltage characteristics are in agreement with a simple physical model that takes into account the thinning of the Schottky barrier due to the space charge of ionized deep centers, which stimulates the concentration of the electric field near the Schottky contact and tunneling of electrons by hopping between local centers through the near-contact layer. At forward biases, this causes an exponential increase in the tunneling current of electrons thermally activated to an energy corresponding to the peak of the Gaussian band. The recharging of the states of the Gaussian band is accompanied by a decrease in the probability of tunneling and the appearance of a current plateau on the forward lg I(Vj) curves. An increase in the space charge of deep centers under reverse bias leads to tunneling leakage and limits the breakdown voltage.
{"title":"Туннелирование через барьеры Шоттки Ni/n-GaN по локализованным состояниям дефектов","authors":"Н.И. Бочкарева, Ю.Г. Шретер","doi":"10.21883/jtf.2023.08.55978.101-23","DOIUrl":"https://doi.org/10.21883/jtf.2023.08.55978.101-23","url":null,"abstract":"Schottky barriers on GaN is considered on the basis of an analysis of the features of the current-voltage characteristics of Ni/n-GaN diodes. It is found that the forward I–V characteristics on a semilogarithmic scale have the form of curves with steps at biases corresponding to the Gaussian bands of localized states of defects in the GaN band gap. It is shown that the experimental current-voltage characteristics are in agreement with a simple physical model that takes into account the thinning of the Schottky barrier due to the space charge of ionized deep centers, which stimulates the concentration of the electric field near the Schottky contact and tunneling of electrons by hopping between local centers through the near-contact layer. At forward biases, this causes an exponential increase in the tunneling current of electrons thermally activated to an energy corresponding to the peak of the Gaussian band. The recharging of the states of the Gaussian band is accompanied by a decrease in the probability of tunneling and the appearance of a current plateau on the forward lg I(Vj) curves. An increase in the space charge of deep centers under reverse bias leads to tunneling leakage and limits the breakdown voltage.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73254603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.06.55601.244-22
Ю.З. Васильева, Павел Вадимович Поваляев, А. П. Корчагина, С. А. Янковский, А.Я. Пак
The paper presents a method, implemented for the first time, for the thermal synthesis of hafnium carbide powder using a DC arc discharge initiated in the open-air atmosphere. Based on the results of the series of experiments, the dependences of the current strength of the power source and the time of thermal treatment on the phase composition of the resulting powder product were established. Required parameters have been determined to ensure the synthesis of a powder containing ~ 98 wt. % of the cubic phase of hafnium carbide: heat treatment of the initial mixture containing the stoichiometric ratio of hafnium to carbon for 60 s at a current of 220 A. The size, shape, and substructure of particles of the synthesized carbide are characterized. The differential thermal analysis carried out in an oxidizing medium showed that the obtained hafnium carbide powder is oxidized most intensively at a temperature of ~700°C.
{"title":"Синтез порошка карбида гафния в атмосферной дуговой плазме","authors":"Ю.З. Васильева, Павел Вадимович Поваляев, А. П. Корчагина, С. А. Янковский, А.Я. Пак","doi":"10.21883/jtf.2023.06.55601.244-22","DOIUrl":"https://doi.org/10.21883/jtf.2023.06.55601.244-22","url":null,"abstract":"The paper presents a method, implemented for the first time, for the thermal synthesis of hafnium carbide powder using a DC arc discharge initiated in the open-air atmosphere. Based on the results of the series of experiments, the dependences of the current strength of the power source and the time of thermal treatment on the phase composition of the resulting powder product were established. Required parameters have been determined to ensure the synthesis of a powder containing ~ 98 wt. % of the cubic phase of hafnium carbide: heat treatment of the initial mixture containing the stoichiometric ratio of hafnium to carbon for 60 s at a current of 220 A. The size, shape, and substructure of particles of the synthesized carbide are characterized. The differential thermal analysis carried out in an oxidizing medium showed that the obtained hafnium carbide powder is oxidized most intensively at a temperature of ~700°C.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88231488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.01.54076.191-22
Н.И. Плюснин
Исследование границы раздела Fe/Si(001)2x1 в процессе ее формирования проводили методами дифракции медленных электронов (LEED), спектроскопии оже-электронов (AES), спектроскопии потерь энергии электронов (EELS) (все in-situ) и после выгрузки из камеры --- методом атомно-силовой микроскопии (AFM). Пленки Fe на Si(001)2x1 получали при температурах подложки и источника 30oС и соответственно 1250oС. Смачивающий слой (WL) Si(001)2x1-Fe формировали отжигом на стадиях роста 1 монослой (ML) и 3 ML при температурах 500oC и соответственно 250oC. Анализ и интерпретация полученных данных с учетом возможных схем поверхностных реакций показал, что после отжига при толщине 1 ML состав слоев (сверху вниз) пленки Fe соответствовал 2 ML Si/Fe. А с увеличением толщины до 2 ML он изменился на Fe/Si/Fe и до 3 ML на Fe-FeSi. Затем после отжига пленки толщиной 3 ML он изменился на FeSi. При 4 ML произошло формирование двухслойной пленки FeSi/FeSi2. И далее при 7 ML и 10 ML состав слоев пленки изменился на Fe3Si/FeSi2 и соответственно Fe/Fe3Si/FeSi2. При этом верхний слой Fe3Si при 7 ML покрылся 0.6 ML сегрегированного Si. А верхний слой Fe при 10 ML после осаждения и отжига при 250oС покрылся 0.3 ML и соответственно 0.6 ML сегрегированного Si. В последней пленке Fe, латеральный размер зерен и средняя высота рельефа пленки составили 10-20 nm и соответственно ~0.4 nm. Ключевые слова: граница раздела, смачивающий слой, многослойная пленка, состав слоев, схемы поверхностных реакций, Fe, Si(001)2x1.
{"title":"Стратификация границы раздела Fe/Si(001)2x1 отжигом смачивающего слоя","authors":"Н.И. Плюснин","doi":"10.21883/jtf.2023.01.54076.191-22","DOIUrl":"https://doi.org/10.21883/jtf.2023.01.54076.191-22","url":null,"abstract":"Исследование границы раздела Fe/Si(001)2x1 в процессе ее формирования проводили методами дифракции медленных электронов (LEED), спектроскопии оже-электронов (AES), спектроскопии потерь энергии электронов (EELS) (все in-situ) и после выгрузки из камеры --- методом атомно-силовой микроскопии (AFM). Пленки Fe на Si(001)2x1 получали при температурах подложки и источника 30oС и соответственно 1250oС. Смачивающий слой (WL) Si(001)2x1-Fe формировали отжигом на стадиях роста 1 монослой (ML) и 3 ML при температурах 500oC и соответственно 250oC. Анализ и интерпретация полученных данных с учетом возможных схем поверхностных реакций показал, что после отжига при толщине 1 ML состав слоев (сверху вниз) пленки Fe соответствовал 2 ML Si/Fe. А с увеличением толщины до 2 ML он изменился на Fe/Si/Fe и до 3 ML на Fe-FeSi. Затем после отжига пленки толщиной 3 ML он изменился на FeSi. При 4 ML произошло формирование двухслойной пленки FeSi/FeSi2. И далее при 7 ML и 10 ML состав слоев пленки изменился на Fe3Si/FeSi2 и соответственно Fe/Fe3Si/FeSi2. При этом верхний слой Fe3Si при 7 ML покрылся 0.6 ML сегрегированного Si. А верхний слой Fe при 10 ML после осаждения и отжига при 250oС покрылся 0.3 ML и соответственно 0.6 ML сегрегированного Si. В последней пленке Fe, латеральный размер зерен и средняя высота рельефа пленки составили 10-20 nm и соответственно ~0.4 nm. Ключевые слова: граница раздела, смачивающий слой, многослойная пленка, состав слоев, схемы поверхностных реакций, Fe, Si(001)2x1.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":"110 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89345984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.04.55029.290-22
Александр Михайлович Лерер, В В Махно, Владимир Иванович Кравченко
Two-sided approximate boundary conditions are obtained for an absolutely absorbing ("black") layer lying on a multilayer dielectric. Paired summation equations (PSEs) are obtained for the tangent components of the electric and magnetic field strengths at the slots. These equations are solved by the Galerkin method with basis functions in the form of Chebyshev and Legendre polynomials. The resulting system of linear algebraic equations has fast internal convergence. To control the accuracy of the obtained solution, a dual problem is solved - a lattice of "black stripes". In this case, the unknowns in the PSU are the current density on the strips. The properties of lattices are analyzed.
{"title":"Дифракция электромагнитных волн на одномерных дифракционных решетках, образованных щелями в абсолютно поглощающем экране","authors":"Александр Михайлович Лерер, В В Махно, Владимир Иванович Кравченко","doi":"10.21883/jtf.2023.04.55029.290-22","DOIUrl":"https://doi.org/10.21883/jtf.2023.04.55029.290-22","url":null,"abstract":"Two-sided approximate boundary conditions are obtained for an absolutely absorbing (\"black\") layer lying on a multilayer dielectric. Paired summation equations (PSEs) are obtained for the tangent components of the electric and magnetic field strengths at the slots. These equations are solved by the Galerkin method with basis functions in the form of Chebyshev and Legendre polynomials. The resulting system of linear algebraic equations has fast internal convergence. To control the accuracy of the obtained solution, a dual problem is solved - a lattice of \"black stripes\". In this case, the unknowns in the PSU are the current density on the strips. The properties of lattices are analyzed.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73230964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.05.55456.262-22
Анатолий Викторович Воронин, В.Ю. Горяинов, А.А. Капралов, Владимир Адольфович Токарев, Г.Ю. Сотникова
A high-speed two-color pyrometer has been developed that allows measuring the intensity of thermal radiation in temperature range of 100-3500 0C with 2 µs time resolution. The analysis of the main factors affecting the measurement of surface temperature in the conditions of its interaction with plasma is carried out. It is shown that at plasma temperature of more than 10 eV and moderate concentration of particles, the wall plasma can be considered transparent to thermal radiation. Experimental studies on non-contact measurement of temperature of surface interacting with plasma on Globus-M2 tokamak and plasma gun test bench have been carried out. Sawtooth temperature fluctuations were detected on the wall of tokamak chamber near the exit of outer separatrix branch. The period of these flashes was 3-4 ms, and duration was 2 ms. The maximum wall temperature measured by a high-speed pyrometer exceeded the temperature measured by infrared camera. Measurements of temperature of the front surface of W-Li sample were carried out at plasma gun test bench under conditions of deuterium plasma jet cyclic action under loads simulating regimes of plasma current disruption in tokamak. The sample temperature reached more than 3000 0C during < 1 ms. The thermal conductivity of the sample degraded with an increase in number of plasma exposure cycles, which was expressed in progressive decrease in target cooling rate after the pulse. Using a high-speed pyrometer, it is proposed to control the formation of heat-insulating foils on surface interacting with plasma.
{"title":"Исследование температуры поверхности, контактирующей с плазмой, методом двухцветной пирометрии","authors":"Анатолий Викторович Воронин, В.Ю. Горяинов, А.А. Капралов, Владимир Адольфович Токарев, Г.Ю. Сотникова","doi":"10.21883/jtf.2023.05.55456.262-22","DOIUrl":"https://doi.org/10.21883/jtf.2023.05.55456.262-22","url":null,"abstract":"A high-speed two-color pyrometer has been developed that allows measuring the intensity of thermal radiation in temperature range of 100-3500 0C with 2 µs time resolution. The analysis of the main factors affecting the measurement of surface temperature in the conditions of its interaction with plasma is carried out. It is shown that at plasma temperature of more than 10 eV and moderate concentration of particles, the wall plasma can be considered transparent to thermal radiation. Experimental studies on non-contact measurement of temperature of surface interacting with plasma on Globus-M2 tokamak and plasma gun test bench have been carried out. Sawtooth temperature fluctuations were detected on the wall of tokamak chamber near the exit of outer separatrix branch. The period of these flashes was 3-4 ms, and duration was 2 ms. The maximum wall temperature measured by a high-speed pyrometer exceeded the temperature measured by infrared camera. Measurements of temperature of the front surface of W-Li sample were carried out at plasma gun test bench under conditions of deuterium plasma jet cyclic action under loads simulating regimes of plasma current disruption in tokamak. The sample temperature reached more than 3000 0C during < 1 ms. The thermal conductivity of the sample degraded with an increase in number of plasma exposure cycles, which was expressed in progressive decrease in target cooling rate after the pulse. Using a high-speed pyrometer, it is proposed to control the formation of heat-insulating foils on surface interacting with plasma.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75358018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/jtf.2023.04.55046.257-22
Владимир Александрович Морозов, Н. В. Егоров, В. В. Трофимов, К. А. Никифоров, И. И. Закиров, Вадим Маркович Кац, В.А. Ильин, Александр Сергеевич Иванов
This study assesses promising field electron sources based on silicon carbide monolithic field emission array (FEA). FEA is fabricated on single-crystal wafers of silicon carbide (0001C) 6H-SiC of n-type conductivity using the technology of two-stage reactive ion etching in SF6/O2/Ar atmosphere. To implement conditions close to breakdown, an experimental setup based on high-voltage narrow pulses generating device GKVI-300 was used. A series of nanosecond voltage pulses with amplitudes from 120 to 250 kV was generated. To study the characteristics of the FEA in the pre-breakdown state, the beam of field emitted electrons was separated from the ion torch or cathode plasma, formed in the following breakdown phases, by placing a 50-μm-thick titanium foil under zero potential into the interelectrode gap. Current-voltage characteristics of peak-currents vs. peak-voltages passing through the foil are close to rectilinear in the Fowler-Nordheim coordinates. The current-voltage characteristics plotted for each of the pulses along increasing and decreasing branches show a discrepancy (hysteresis). After the experiments, the silicon carbide cathode FEA was studied in a scanning electron microscope.
{"title":"Характеристики матричного катода из карбида кремния в предпробойных и пробойных условиях","authors":"Владимир Александрович Морозов, Н. В. Егоров, В. В. Трофимов, К. А. Никифоров, И. И. Закиров, Вадим Маркович Кац, В.А. Ильин, Александр Сергеевич Иванов","doi":"10.21883/jtf.2023.04.55046.257-22","DOIUrl":"https://doi.org/10.21883/jtf.2023.04.55046.257-22","url":null,"abstract":"This study assesses promising field electron sources based on silicon carbide monolithic field emission array (FEA). FEA is fabricated on single-crystal wafers of silicon carbide (0001C) 6H-SiC of n-type conductivity using the technology of two-stage reactive ion etching in SF6/O2/Ar atmosphere. To implement conditions close to breakdown, an experimental setup based on high-voltage narrow pulses generating device GKVI-300 was used. A series of nanosecond voltage pulses with amplitudes from 120 to 250 kV was generated. To study the characteristics of the FEA in the pre-breakdown state, the beam of field emitted electrons was separated from the ion torch or cathode plasma, formed in the following breakdown phases, by placing a 50-μm-thick titanium foil under zero potential into the interelectrode gap. Current-voltage characteristics of peak-currents vs. peak-voltages passing through the foil are close to rectilinear in the Fowler-Nordheim coordinates. The current-voltage characteristics plotted for each of the pulses along increasing and decreasing branches show a discrepancy (hysteresis). After the experiments, the silicon carbide cathode FEA was studied in a scanning electron microscope.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":"60 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74951978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：