Pub Date : 1994-06-20DOI: 10.1109/DRC.1994.1009412
M. Hack, I. Wu
In this paper we show good agreement between numerical simulations and experimental data of the electrical characteristics of multiple gate poly-crystalline silicon (poly-Si) thin film transistors (TFTs). We focus on leakage current, as this is the most critical TFT characteristic for pixel switches in high resolution active matrix liquid crystal displays (AMLCD). The minimum leakage current ( Imin) determines grey level performance, while the sharpness of the minimum determines the range of negative gate bias required to maintain leakages close to I m i n , Leakage currents in poly-Si TFTs have been shown to be caused by a high electric field tunneling mechanism at specific traps, probably associated with intra-grain defects [l]. Various strategies are currently being employed to reduce leakage currents, but multiple gate devices [2] are preferential on account of their ease of implementation. In multiple gate structures the gated regions are connected by heavily doped channel regions. Experimentally we show [3] that while NMOS multiple gate structures reduce I m i n , they do not reduce the slope of the leakage current increase with larger reverse gate biases, V, , . This result is contrary to initial expectations that multiple gate TFTs would reduce the slope of the reverse V, , leakage, as the drain bias (Vds) is divided between the gated regions, and as minority carriers generated in the drain high field region would recombine in the (or one of the) heavily doped channel region(s) without reaching the source. In this paper we demonstrate, for the first time, why multiple gate TFTs have the same leakage increase a t negative gate voltages as single gate TFTs. Leakage currents are simulated by adding a single tunneling trap with a temperature independent tunneling mechanism to an effective medium model [l]. With increasing reverse V, , the maximum channel electric field moves from the edge of the gated region (second) near the TFT drain to the drain edge of the gated region nearest to the source (first), causing the leakage current slope to be independent of the number of gates. Multiple gate structures lower Imin as the vds is divided between the different gated regions, reducing the peak channel electric field. The leakage of a double gate TFT a t Vds = 10 Volts is higher than that of a single gate device a t vds=Sv. The experimental data of the dependence of leakage on reverse V,, are in good agreement with the simulation results. Contour plots of the channel electric field for vds= 1OV in a double gate TFT show that for VgS above the value needed for minimum leakage current (Vgsmin) the highest field is near to the edge of the gated region nearest the device drain. Carrier concentration profiles show that few minority carriers generated in the high field region flow through the central heavily doped region to the source. For V, , more negative than Vgsmin the point of highest electric field moves to the drain edge of the gated region neare
本文对多栅多晶硅薄膜晶体管(TFTs)的电特性进行了数值模拟，结果与实验数据吻合较好。我们关注漏电流，因为这是高分辨率有源矩阵液晶显示器(AMLCD)中像素开关最关键的TFT特性。最小泄漏电流(Imin)决定了灰度性能，而最小泄漏电流的清晰度决定了保持泄漏接近Im I n所需的负栅极偏置范围。多晶硅tft中的泄漏电流已被证明是由特定陷阱处的高电场隧穿机制引起的，可能与晶粒内缺陷有关[1]。目前采用了各种策略来减少泄漏电流，但由于易于实现，多栅极器件[2]是首选。在多栅极结构中，门控区由重掺杂的通道区连接。实验表明[3]，虽然NMOS多栅极结构降低了I m I n，但当反栅极偏置较大时，泄漏电流增加的斜率并没有降低。这一结果与最初的预期相反，即由于漏极偏置(Vds)在门控区域之间被划分，并且由于漏极高场区域产生的少数载流子将在没有到达源的情况下在重掺杂的沟道区域(或其中一个)中重新组合，因此多个栅极tft将降低反V漏的斜率。在本文中，我们首次证明了为什么多栅极tft具有与单栅极tft相同的泄漏增加t负栅极电压。通过在有效介质模型中加入具有温度无关隧道机制的单个隧道陷阱来模拟泄漏电流[l]。随着反向V的增大，最大通道电场从靠近TFT漏极的门控区边缘(第二)移动到最靠近源极的门控区漏极边缘(第一)，导致漏电流斜率与栅极数无关。由于vds在不同的门控区域之间被划分，多个栅极结构降低了Imin，降低了通道电场的峰值。当Vds = 10伏时，双栅TFT器件的漏电比单栅TFT器件的漏电高。泄漏量与反向V的关系的实验数据与仿真结果吻合较好。双栅TFT中vds= 1OV的沟道电场等高线图显示，当VgS高于最小漏电流所需值(Vgsmin)时，最高电场位于最靠近器件漏极的门控区域边缘附近。载流子浓度分布表明，在高场区产生的少数少数载流子通过中心重掺杂区流向源。当V比vgsmm负时，电场最高的点移动到离源最近的栅极区漏极边缘，一旦离漏极最近的栅极区具有足够的导电性，TFT内最大的电势下降是在源栅极区漏极端。现在，在第一个门控区域由隧道机制产生的少数载流子流向源，增加了泄漏电流。这使得双栅tft具有与单栅tft相同的斜率反栅偏置特性。栅极数逐渐增加的TFTs也具有与单栅极器件相同的泄漏斜率，因为最高的通道电场点总是移动到离源最近的栅极区域的漏极边缘。
{"title":"Analysis of leakage currents in multiple gate poly-si thin film transistors for active matrix liquid crystal displays","authors":"M. Hack, I. Wu","doi":"10.1109/DRC.1994.1009412","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009412","url":null,"abstract":"In this paper we show good agreement between numerical simulations and experimental data of the electrical characteristics of multiple gate poly-crystalline silicon (poly-Si) thin film transistors (TFTs). We focus on leakage current, as this is the most critical TFT characteristic for pixel switches in high resolution active matrix liquid crystal displays (AMLCD). The minimum leakage current ( Imin) determines grey level performance, while the sharpness of the minimum determines the range of negative gate bias required to maintain leakages close to I m i n , Leakage currents in poly-Si TFTs have been shown to be caused by a high electric field tunneling mechanism at specific traps, probably associated with intra-grain defects [l]. Various strategies are currently being employed to reduce leakage currents, but multiple gate devices [2] are preferential on account of their ease of implementation. In multiple gate structures the gated regions are connected by heavily doped channel regions. Experimentally we show [3] that while NMOS multiple gate structures reduce I m i n , they do not reduce the slope of the leakage current increase with larger reverse gate biases, V, , . This result is contrary to initial expectations that multiple gate TFTs would reduce the slope of the reverse V, , leakage, as the drain bias (Vds) is divided between the gated regions, and as minority carriers generated in the drain high field region would recombine in the (or one of the) heavily doped channel region(s) without reaching the source. In this paper we demonstrate, for the first time, why multiple gate TFTs have the same leakage increase a t negative gate voltages as single gate TFTs. Leakage currents are simulated by adding a single tunneling trap with a temperature independent tunneling mechanism to an effective medium model [l]. With increasing reverse V, , the maximum channel electric field moves from the edge of the gated region (second) near the TFT drain to the drain edge of the gated region nearest to the source (first), causing the leakage current slope to be independent of the number of gates. Multiple gate structures lower Imin as the vds is divided between the different gated regions, reducing the peak channel electric field. The leakage of a double gate TFT a t Vds = 10 Volts is higher than that of a single gate device a t vds=Sv. The experimental data of the dependence of leakage on reverse V,, are in good agreement with the simulation results. Contour plots of the channel electric field for vds= 1OV in a double gate TFT show that for VgS above the value needed for minimum leakage current (Vgsmin) the highest field is near to the edge of the gated region nearest the device drain. Carrier concentration profiles show that few minority carriers generated in the high field region flow through the central heavily doped region to the source. For V, , more negative than Vgsmin the point of highest electric field moves to the drain edge of the gated region neare","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121766741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-06-20DOI: 10.1109/DRC.1994.1009406
T. Ghani, J. Hoyt, M. E. Weybright, J. Gibbons
{"title":"Minority carrier transport parameters in n-Si/p+-Si/sub 1-x/Ge/sub x//n-Si HBTs using A.C. and D.C. measurements","authors":"T. Ghani, J. Hoyt, M. E. Weybright, J. Gibbons","doi":"10.1109/DRC.1994.1009406","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009406","url":null,"abstract":"","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122323747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-06-20DOI: 10.1109/DRC.1994.1009404
H. Bleichner, M. Nordgren, M. Rosling, P. Jonsson, E. Nordlander
Turn-off failure mechanisms in GTO thyristors of different anode designs supported by 3-D simulations
三维模拟支持不同阳极设计的GTO晶闸管关断失效机制
{"title":"Turn-off failure mechanisms in gto thyristors of different anode designs supported by 3-d simulations","authors":"H. Bleichner, M. Nordgren, M. Rosling, P. Jonsson, E. Nordlander","doi":"10.1109/DRC.1994.1009404","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009404","url":null,"abstract":"Turn-off failure mechanisms in GTO thyristors of different anode designs supported by 3-D simulations","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127408762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-06-20DOI: 10.1109/DRC.1994.1009443
S. Murtaza, J. Campbell, J. Bean, L. Peticolas
The smaller absorption coefficient of silicon as compared to direct band-gap III-V compound materials necessitates the use of thick (typically > 5 pm) absorption regions in silicon photodiodes. Although high responsivities can be achieved with the thick absorbing layers, the associated transit times limit bandwidths to 90% [2]. This has made it possible to realize a Sibased resonant-cavity photodiode. The photodiode structure was grown by solid source molecular beam epitaxy. The asymmetric mirror consisted of 40, n-doped (1x1018) G@.gSio.~/Si periods grown on a silicon substrate. The thicknesses of the Geo.30Si0.70 and Si layers were 22581 and 570 81, respectively. The mirror was followed by a 1.03 pm-thick intrinsic silicon absorbing layer. On top of this was grown a 0.2 pm, p-doped (1~10~8) Si layer followed by a 200 81 p+ Si contact layer. The photodetector structure is shown in Fig.1. The simulated and measured reflectivity spectra of the bottom GeSi/Si mirror are shown in Fig. 2. The quantum efficiency of the resonant cavity photodetector was measured by comparing it with a calibrated silicon photodiode. The quantum efficiency curve is shown in Fig. 3. The peak quantum efficiency was found to be 89%. At resonance, essentially all the absorption takes place in the 1.25 pm long cavity. In a conventional photodiode structure, even with a perfect antireflection coating, the absorbing layer would have to be at least 8 times thicker (- 10 pm) to achieve the same responsivity and there would be a comparable decrease in the bandwidth. The calculated, transit-time-limited bandwidth of the resonant-cavity photodiode is greater than 25 GHz, Work is also in progress on novel GexSil-,/Si mirrors and photodetectors that will be resonant at two distinct wavelengths [3]. The dual mirror structure essentially consists of a quarter wavelength asymmetric mirror with additional quarter wavelength layers of Si inserted at appropriate points in the structure to modulate the reflected phase. The measured reflectivity spectrum of a dual wavelength asymmetric mirror is shown in Fig. 4. The two reflectivity peaks are close to 632 nm and 780 nm. A cavity which will be resonant at both the peak wavelengths can be grown on top of this mirror to provide twin-peak resonant cavity photodetectors. Such devices can be used for wavelength-division-multiplexing applications and integrated noise filters.
{"title":"SiGe/Si resonant cavity photodetector","authors":"S. Murtaza, J. Campbell, J. Bean, L. Peticolas","doi":"10.1109/DRC.1994.1009443","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009443","url":null,"abstract":"The smaller absorption coefficient of silicon as compared to direct band-gap III-V compound materials necessitates the use of thick (typically > 5 pm) absorption regions in silicon photodiodes. Although high responsivities can be achieved with the thick absorbing layers, the associated transit times limit bandwidths to 90% [2]. This has made it possible to realize a Sibased resonant-cavity photodiode. The photodiode structure was grown by solid source molecular beam epitaxy. The asymmetric mirror consisted of 40, n-doped (1x1018) G@.gSio.~/Si periods grown on a silicon substrate. The thicknesses of the Geo.30Si0.70 and Si layers were 22581 and 570 81, respectively. The mirror was followed by a 1.03 pm-thick intrinsic silicon absorbing layer. On top of this was grown a 0.2 pm, p-doped (1~10~8) Si layer followed by a 200 81 p+ Si contact layer. The photodetector structure is shown in Fig.1. The simulated and measured reflectivity spectra of the bottom GeSi/Si mirror are shown in Fig. 2. The quantum efficiency of the resonant cavity photodetector was measured by comparing it with a calibrated silicon photodiode. The quantum efficiency curve is shown in Fig. 3. The peak quantum efficiency was found to be 89%. At resonance, essentially all the absorption takes place in the 1.25 pm long cavity. In a conventional photodiode structure, even with a perfect antireflection coating, the absorbing layer would have to be at least 8 times thicker (- 10 pm) to achieve the same responsivity and there would be a comparable decrease in the bandwidth. The calculated, transit-time-limited bandwidth of the resonant-cavity photodiode is greater than 25 GHz, Work is also in progress on novel GexSil-,/Si mirrors and photodetectors that will be resonant at two distinct wavelengths [3]. The dual mirror structure essentially consists of a quarter wavelength asymmetric mirror with additional quarter wavelength layers of Si inserted at appropriate points in the structure to modulate the reflected phase. The measured reflectivity spectrum of a dual wavelength asymmetric mirror is shown in Fig. 4. The two reflectivity peaks are close to 632 nm and 780 nm. A cavity which will be resonant at both the peak wavelengths can be grown on top of this mirror to provide twin-peak resonant cavity photodetectors. Such devices can be used for wavelength-division-multiplexing applications and integrated noise filters.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117021198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-06-20DOI: 10.1109/DRC.1994.1009437
D. Huffaker, D. Deppe, K. K. Kumar, T. Rogers
{"title":"Low threshold vertical-cavity lasers based on native-oxidation of alas","authors":"D. Huffaker, D. Deppe, K. K. Kumar, T. Rogers","doi":"10.1109/DRC.1994.1009437","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009437","url":null,"abstract":"","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"207 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121196882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-06-20DOI: 10.1109/DRC.1994.1009434
H.C. Liu, G.E. Jenskins, E. Brown, K. A. Mcintosh, K. Nichols, M. Manfra
This paper introduces three tec niques for charac- terizing the high frequency per ormance of quan- tum well infrared photodetect rs, and discusses the physical foundation and U derstanding of the ezperiments. The three tech iques are (1) mi- crowave rectification, (2) infra I ed heterodyne, and (3) heterodyne microwave mixjng.
{"title":"High frequency quantum well infrared photodetector","authors":"H.C. Liu, G.E. Jenskins, E. Brown, K. A. Mcintosh, K. Nichols, M. Manfra","doi":"10.1109/DRC.1994.1009434","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009434","url":null,"abstract":"This paper introduces three tec niques for charac- terizing the high frequency per ormance of quan- tum well infrared photodetect rs, and discusses the physical foundation and U derstanding of the ezperiments. The three tech iques are (1) mi- crowave rectification, (2) infra I ed heterodyne, and (3) heterodyne microwave mixjng.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121398722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-06-20DOI: 10.1109/DRC.1994.1009414
K. A. Mcintosh, E. Brown, K.S. Nichols, M. Manfra, C. L. Dennis
{"title":"Coherent terahertz radiation from LTG-GaAs photomixers","authors":"K. A. Mcintosh, E. Brown, K.S. Nichols, M. Manfra, C. L. Dennis","doi":"10.1109/DRC.1994.1009414","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009414","url":null,"abstract":"","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115737157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-06-20DOI: 10.1109/DRC.1994.1009433
C. Lee, K. Choi
{"title":"Transport phenomena in quantum well infrared photodetectors","authors":"C. Lee, K. Choi","doi":"10.1109/DRC.1994.1009433","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009433","url":null,"abstract":"","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131065392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-06-20DOI: 10.1109/DRC.1994.1009393
R.M. Kolbas, F. Reed, D. Zhang
A three terminal dual wavelength light emitter based on selective carrier injection and the bias dependent collection of electrons and holes in quantum wells is reported. The emission wavelength is selected by an applied voltage and the emission intensity is independently modulated by an applied current. The device exhibits coaxial optical output, a large wavelength separation (570 A), low operational voltages ( 0) at 77K. Having selected the wavelength with IV1k2.1 V the optical output power can be modulated by modulating I2 without loss of wavelength selectivity. Wavelength switching can be accomplished while maintaining a high contrast ratio and optical output power. The details of the growth, fabrication and method of operation of this bias induced color tuned emitter will be presented. Application of this carrier collection control to achieve other device functions will be briefly discussed.
{"title":"Bi-color light emitting diode based on the bias dependent collection of electrons and holes in quantum wells","authors":"R.M. Kolbas, F. Reed, D. Zhang","doi":"10.1109/DRC.1994.1009393","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009393","url":null,"abstract":"A three terminal dual wavelength light emitter based on selective carrier injection and the bias dependent collection of electrons and holes in quantum wells is reported. The emission wavelength is selected by an applied voltage and the emission intensity is independently modulated by an applied current. The device exhibits coaxial optical output, a large wavelength separation (570 A), low operational voltages ( 0) at 77K. Having selected the wavelength with IV1k2.1 V the optical output power can be modulated by modulating I2 without loss of wavelength selectivity. Wavelength switching can be accomplished while maintaining a high contrast ratio and optical output power. The details of the growth, fabrication and method of operation of this bias induced color tuned emitter will be presented. Application of this carrier collection control to achieve other device functions will be briefly discussed.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127241308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-06-20DOI: 10.1109/DRC.1994.1009428
S. Fu, S. Park, Y. Hsin, M. Ho, T. Chin, P. Yu, C. Tu, P. Asbeck
A key research need for future III-V HBTs is to reduce device dimensions, while minimizing emitter edge recombination and parasitic capacitances. This paper presents a novel HBT structure based on multiple epitaxial growths well suited for such scaling. These are the first HBTs made with selectively grown GaInP emitters, the first made with widebandgap GaInP extrinsic base regions, and the first to use sidewall spacers to reduce emitter width from photolithographic dimensions.
{"title":"GaInP/GaAs HBTs with selectively regrown emitter and wide bandgap extrinsic base","authors":"S. Fu, S. Park, Y. Hsin, M. Ho, T. Chin, P. Yu, C. Tu, P. Asbeck","doi":"10.1109/DRC.1994.1009428","DOIUrl":"https://doi.org/10.1109/DRC.1994.1009428","url":null,"abstract":"A key research need for future III-V HBTs is to reduce device dimensions, while minimizing emitter edge recombination and parasitic capacitances. This paper presents a novel HBT structure based on multiple epitaxial growths well suited for such scaling. These are the first HBTs made with selectively grown GaInP emitters, the first made with widebandgap GaInP extrinsic base regions, and the first to use sidewall spacers to reduce emitter width from photolithographic dimensions.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125596603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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