首页 > 最新文献

2009 Ph.D. Research in Microelectronics and Electronics最新文献

英文 中文
Implementation of a 64-point FFT on a Multi-Processor System-on-Chip 64点FFT在多处理器片上系统的实现
Pub Date : 2009-07-12 DOI: 10.1109/RME.2009.5201371
Roberto Airoldi, F. Garzia, J. Nurmi
This paper describes the implementation of a 64-point FFT on a Multi-Processor System-on-Chip (MPSoC) composed of 9 homogeneous clusters. Each cluster is built around a RISC processor. The implementation technique adopted for the mapping of the FFT produces a speed-up of 6x which is close to the theoretical limit. This is due to a reduced overhead of intra-clusters communication.
本文描述了一个64点FFT在由9个同构集群组成的多处理器单片系统(MPSoC)上的实现。每个集群都是围绕RISC处理器构建的。用于FFT映射的实现技术产生6倍的加速,接近理论极限。这是由于减少了集群内部通信的开销。
{"title":"Implementation of a 64-point FFT on a Multi-Processor System-on-Chip","authors":"Roberto Airoldi, F. Garzia, J. Nurmi","doi":"10.1109/RME.2009.5201371","DOIUrl":"https://doi.org/10.1109/RME.2009.5201371","url":null,"abstract":"This paper describes the implementation of a 64-point FFT on a Multi-Processor System-on-Chip (MPSoC) composed of 9 homogeneous clusters. Each cluster is built around a RISC processor. The implementation technique adopted for the mapping of the FFT produces a speed-up of 6x which is close to the theoretical limit. This is due to a reduced overhead of intra-clusters communication.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121178543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A UHF voltage multiplier circuit using a threshold-voltage cancellation technique 一种采用阈值电压对消技术的超高频电压倍增电路
Pub Date : 2009-07-12 DOI: 10.1109/RME.2009.5201303
T. Feldengut, R. Kokozinski, S. Kolnsberg
The operating range of passive UHF transponder systems is largely determined by the tag current consumption and the rectifier efficiency. Reading ranges of several meters have recently been reported for many state of the art RFID (Radio frequency IDentification) tags [1]. At this distance, the main issue for the rectifier design is the low amplitude of the high frequency antenna signal. Schottky diodes are often used for their low forward voltage drop and high switching speed. As an alternative to Schottky diodes, different circuit techniques for compensating the threshold voltage of standard transistor diodes have been utilized [4]. The transistor gates are biased near the threshold voltage, so that the devices effectively act as diodes with very low forward voltage drop. In the presented rectifier, a secondary diode charge pump is used to generate the DC bias for the threshold voltage compensation. The circuit is implemented in a standard CMOS technology and operates at a minimum available power of −11.3 dBm for an output DC power of 7.5 µW.
无源超高频应答系统的工作范围在很大程度上取决于标签电流消耗和整流器效率。最近报道了许多最先进的RFID(射频识别)标签的几米读取范围[1]。在这种距离下,整流器设计的主要问题是高频天线信号的低幅值。肖特基二极管因其低正向压降和高开关速度而被广泛使用。作为肖特基二极管的替代方案,已经使用了不同的电路技术来补偿标准晶体管二极管的阈值电压[4]。晶体管门偏置在阈值电压附近,因此器件有效地充当二极管,具有非常低的正向压降。在该整流器中,利用二次二极管电荷泵产生直流偏置,用于阈值电压补偿。该电路采用标准CMOS技术,最小可用功率为- 11.3 dBm,输出直流功率为7.5 μ W。
{"title":"A UHF voltage multiplier circuit using a threshold-voltage cancellation technique","authors":"T. Feldengut, R. Kokozinski, S. Kolnsberg","doi":"10.1109/RME.2009.5201303","DOIUrl":"https://doi.org/10.1109/RME.2009.5201303","url":null,"abstract":"The operating range of passive UHF transponder systems is largely determined by the tag current consumption and the rectifier efficiency. Reading ranges of several meters have recently been reported for many state of the art RFID (Radio frequency IDentification) tags [1]. At this distance, the main issue for the rectifier design is the low amplitude of the high frequency antenna signal. Schottky diodes are often used for their low forward voltage drop and high switching speed. As an alternative to Schottky diodes, different circuit techniques for compensating the threshold voltage of standard transistor diodes have been utilized [4]. The transistor gates are biased near the threshold voltage, so that the devices effectively act as diodes with very low forward voltage drop. In the presented rectifier, a secondary diode charge pump is used to generate the DC bias for the threshold voltage compensation. The circuit is implemented in a standard CMOS technology and operates at a minimum available power of −11.3 dBm for an output DC power of 7.5 µW.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122700739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Current assisted photonic mixing demodulator implemented in 0.18μm standard CMOS technology 采用0.18μm标准CMOS技术实现的电流辅助光子混合解调器
Pub Date : 2009-07-12 DOI: 10.1109/RME.2009.5201367
Q. D. Hossain, G. Betta, L. Pancheri, D. Stoppa
CMOS image sensors integrate the image processing circuitry on the same chip as the light sensitive elements. Recently, lots of effort has been concentrated to create a standard CMOS photonic demodulator. A CMOS based current assisted photonic mixing demodulator is described in this paper. As a test vehicle, 10×10 pixel arrays in two different geometries have been fabricated with a 0.18μm CMOS technology. Remarkably small pixel size of 10×10 μm2 has been achieved. Preliminary experimental results demonstrate a good DC charge separation efficiency close to 100% and good demodulation capabilities up to 35MHz. The measurement results are compared to the performance of two different device array structures. These test devices represent the first step towards integrating a high resolution TOF based 3D CMOS image sensor.
CMOS图像传感器将图像处理电路与光敏元件集成在同一芯片上。最近,大量的努力已经集中在创建一个标准的CMOS光子解调器。本文介绍了一种基于CMOS的电流辅助光子混合解调器。作为测试载体,采用0.18μm CMOS技术制造了两种不同几何形状的10×10像素阵列。实现了非常小的像素尺寸10×10 μm2。初步实验结果表明,该器件具有接近100%的直流电荷分离效率和高达35MHz的解调能力。测量结果比较了两种不同器件阵列结构的性能。这些测试设备代表了集成基于TOF的高分辨率3D CMOS图像传感器的第一步。
{"title":"Current assisted photonic mixing demodulator implemented in 0.18μm standard CMOS technology","authors":"Q. D. Hossain, G. Betta, L. Pancheri, D. Stoppa","doi":"10.1109/RME.2009.5201367","DOIUrl":"https://doi.org/10.1109/RME.2009.5201367","url":null,"abstract":"CMOS image sensors integrate the image processing circuitry on the same chip as the light sensitive elements. Recently, lots of effort has been concentrated to create a standard CMOS photonic demodulator. A CMOS based current assisted photonic mixing demodulator is described in this paper. As a test vehicle, 10×10 pixel arrays in two different geometries have been fabricated with a 0.18μm CMOS technology. Remarkably small pixel size of 10×10 μm2 has been achieved. Preliminary experimental results demonstrate a good DC charge separation efficiency close to 100% and good demodulation capabilities up to 35MHz. The measurement results are compared to the performance of two different device array structures. These test devices represent the first step towards integrating a high resolution TOF based 3D CMOS image sensor.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115529728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Analysis of a set of error correcting schemes in multi-hop wireless sensor networks 多跳无线传感器网络中的一组纠错方案分析
Pub Date : 2009-07-12 DOI: 10.1109/RME.2009.5201368
S. Srivastava, C. Spagnol, E. Popovici
In multi-hop wireless sensor networks (WSN), the data transmitted from sensor nodes is highly susceptible to error corruption introduced by noisy channels. It is important to use some error correction schemes in order to control the errors introduced and to reduce the number of automatic requests for retransmission. The sensor nodes are typically wireless nodes with limited storage and computational power. Thus the error control schemes should be energy efficient at sensor nodes level. Most of the reported works assume that both encoding and decoding are performed at every node. The idea of this paper is to perform encoding only at the first node and decoding will be done at the base station. We assume that the base station has enough power to run complex decoding algorithms. This paper provides a model for energy consumed and the probability of receiving a correct word for multi-hop WSN at base station when considering a number of coding schemes and hops. The emphasis is on using powerful codes with low complexity encoding. Several powerful codes like Reed-Solomon (RS), list decoded RS codes, multivariate interpolation decoded RS codes (MIDRS) and Hermitian codes are investigated for this scheme. All these codes have very simple encoding based on RS type encoders and we will show that this scheme consumes less power than reported schemes while maintaining a low probability of error.
在多跳无线传感器网络(WSN)中,从传感器节点传输的数据非常容易受到噪声信道引入的错误损坏。为了控制引入的错误和减少自动重传请求的数量,使用一些错误纠正方案是很重要的。传感器节点通常是具有有限存储和计算能力的无线节点。因此,误差控制方案应在传感器节点级节能。大多数报道的工作都假设在每个节点都执行编码和解码。本文的思想是只在第一个节点进行编码,解码将在基站进行。我们假设基站有足够的功率来运行复杂的解码算法。在考虑多种编码方案和跳数的情况下,给出了多跳无线传感器网络的能量消耗和接收到正确单词的概率模型。重点是使用功能强大且编码复杂度低的代码。研究了Reed-Solomon (RS)码、列表解码RS码、多变量插值解码RS码和厄米特码等功能强大的编码。所有这些编码都具有基于RS型编码器的非常简单的编码,并且我们将证明该方案比报告的方案消耗更少的功率,同时保持较低的错误概率。
{"title":"Analysis of a set of error correcting schemes in multi-hop wireless sensor networks","authors":"S. Srivastava, C. Spagnol, E. Popovici","doi":"10.1109/RME.2009.5201368","DOIUrl":"https://doi.org/10.1109/RME.2009.5201368","url":null,"abstract":"In multi-hop wireless sensor networks (WSN), the data transmitted from sensor nodes is highly susceptible to error corruption introduced by noisy channels. It is important to use some error correction schemes in order to control the errors introduced and to reduce the number of automatic requests for retransmission. The sensor nodes are typically wireless nodes with limited storage and computational power. Thus the error control schemes should be energy efficient at sensor nodes level. Most of the reported works assume that both encoding and decoding are performed at every node. The idea of this paper is to perform encoding only at the first node and decoding will be done at the base station. We assume that the base station has enough power to run complex decoding algorithms. This paper provides a model for energy consumed and the probability of receiving a correct word for multi-hop WSN at base station when considering a number of coding schemes and hops. The emphasis is on using powerful codes with low complexity encoding. Several powerful codes like Reed-Solomon (RS), list decoded RS codes, multivariate interpolation decoded RS codes (MIDRS) and Hermitian codes are investigated for this scheme. All these codes have very simple encoding based on RS type encoders and we will show that this scheme consumes less power than reported schemes while maintaining a low probability of error.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115303151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A scalable solution to n-bit parity via artificial development 通过人工开发可扩展的n位奇偶校验解决方案
Pub Date : 2009-07-12 DOI: 10.1109/RME.2009.5201348
Tüze Kuyucu, M. Trefzer, J. Miller, A. Tyrrell
The design of electronic circuits with model-free heuristics like evolutionary algorithms is an attractive concept and field of research. Although successful to a point, evolution of circuits that are bigger than a 3-bit multiplier is hindered by the scalability problem. Modelling the biological development as an artificial genotype-phenotype mapping mechanism has been shown to improve scalability on some simple circuit problems and pattern formations. As a candidate solution to the scalability issue, an artificial developmental system is presented.
无模型启发式的电子电路设计,如进化算法,是一个有吸引力的概念和研究领域。虽然在某种程度上是成功的,但大于3位乘法器的电路的发展受到可扩展性问题的阻碍。将生物发育建模为人工基因型-表型定位机制已被证明可以提高一些简单电路问题和模式形成的可扩展性。作为可扩展性问题的备选解决方案,提出了一种人工开发系统。
{"title":"A scalable solution to n-bit parity via artificial development","authors":"Tüze Kuyucu, M. Trefzer, J. Miller, A. Tyrrell","doi":"10.1109/RME.2009.5201348","DOIUrl":"https://doi.org/10.1109/RME.2009.5201348","url":null,"abstract":"The design of electronic circuits with model-free heuristics like evolutionary algorithms is an attractive concept and field of research. Although successful to a point, evolution of circuits that are bigger than a 3-bit multiplier is hindered by the scalability problem. Modelling the biological development as an artificial genotype-phenotype mapping mechanism has been shown to improve scalability on some simple circuit problems and pattern formations. As a candidate solution to the scalability issue, an artificial developmental system is presented.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126502076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design of a low noise, low power 3.05–3.45 GHz digitally controlled oscillator in 90 nm CMOS 低噪声、低功耗3.05-3.45 GHz 90 nm CMOS数字控制振荡器的设计
Pub Date : 2009-07-12 DOI: 10.1109/RME.2009.5201311
B. Thiel, A. Neyer, S. Heinen
The design of a multi-GHz digitally controlled oscillator (DCO) achieving low noise and power consumption is presented. The DCO is part of an all-digital phase lock loop (ADPLL) for an FM-radio transmitter prototype chip designed in a 90nm CMOS process. For this application the oscillator frequency of 3.05–3.45GHz is divided by 32 or 36 to cover the frequency span of 87.5–108.0MHz. A wide tuning range combined with a precise frequency tuning is achieved by different digitally controlled variable capacitors grouped as banks. Different approaches of these variable capacitors and oscillator topologies are simulated and compared. The design is chosen considering low phase noise combined with low power consumption. The power consumption of the designed DCO core is below 1.7mW at 1V supply voltage. This setup shows a phase noise below −154 dBc Hz at 20MHz offset. The chip area utilised by one DCO is 260 × 500 µm. Simulations show the performance of this DCO is state-of-the-art.
介绍了一种低噪声、低功耗的多ghz数字控制振荡器(DCO)的设计。该DCO是采用90nm CMOS工艺设计的fm -无线电发射机原型芯片的全数字锁相环(ADPLL)的一部分。对于这个应用,3.05-3.45GHz的振荡器频率除以32或36,以覆盖87.5-108.0MHz的频率范围。广泛的调谐范围结合精确的频率调谐是由不同的数字控制可变电容器组作为银行实现的。对这些可变电容和振荡器拓扑的不同方法进行了仿真和比较。该设计考虑了低相位噪声和低功耗。在1V供电电压下,设计的DCO芯功耗低于1.7mW。该设置显示在20MHz偏移时相位噪声低于- 154 dBc Hz。一个DCO所使用的芯片面积为260 × 500µm。仿真结果表明,该DCO的性能是最先进的。
{"title":"Design of a low noise, low power 3.05–3.45 GHz digitally controlled oscillator in 90 nm CMOS","authors":"B. Thiel, A. Neyer, S. Heinen","doi":"10.1109/RME.2009.5201311","DOIUrl":"https://doi.org/10.1109/RME.2009.5201311","url":null,"abstract":"The design of a multi-GHz digitally controlled oscillator (DCO) achieving low noise and power consumption is presented. The DCO is part of an all-digital phase lock loop (ADPLL) for an FM-radio transmitter prototype chip designed in a 90nm CMOS process. For this application the oscillator frequency of 3.05–3.45GHz is divided by 32 or 36 to cover the frequency span of 87.5–108.0MHz. A wide tuning range combined with a precise frequency tuning is achieved by different digitally controlled variable capacitors grouped as banks. Different approaches of these variable capacitors and oscillator topologies are simulated and compared. The design is chosen considering low phase noise combined with low power consumption. The power consumption of the designed DCO core is below 1.7mW at 1V supply voltage. This setup shows a phase noise below −154 dBc Hz at 20MHz offset. The chip area utilised by one DCO is 260 × 500 µm. Simulations show the performance of this DCO is state-of-the-art.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115825457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
On-chip sine wave frequency multiplier for 40-GHz signal generator 片上正弦波倍频器用于40 ghz信号发生器
Pub Date : 2009-07-12 DOI: 10.1109/RME.2009.5201300
A. Surano, E. Bonizzoni, F. Maloberti
This paper presents a novel signal frequency multiplier for very high speed applications. The proposed circuit is based on a simple but effective folding cell and it is able to generate an output at four times the frequency of the differential sine wave input. The circuit has been designed and optimized for a 40-nm CMOS technology and it has been fully simulated at the transistor level. Possible fabrication and timing mismatches are corrected with foreground calibration. Simulation results shows that the multiplier can provide an output signal at 40 GHz starting from a 10-GHz input signal consuming about 5 mW.
本文提出了一种适用于超高速应用的新型信号倍频器。所提出的电路是基于一个简单但有效的折叠单元,它能够产生四倍于差分正弦波输入频率的输出。该电路已针对40纳米CMOS技术进行了设计和优化,并在晶体管级进行了全面模拟。可能的制造和时序不匹配通过前景校准进行校正。仿真结果表明,该乘法器可以从消耗约5 mW的10 GHz输入信号开始提供40 GHz的输出信号。
{"title":"On-chip sine wave frequency multiplier for 40-GHz signal generator","authors":"A. Surano, E. Bonizzoni, F. Maloberti","doi":"10.1109/RME.2009.5201300","DOIUrl":"https://doi.org/10.1109/RME.2009.5201300","url":null,"abstract":"This paper presents a novel signal frequency multiplier for very high speed applications. The proposed circuit is based on a simple but effective folding cell and it is able to generate an output at four times the frequency of the differential sine wave input. The circuit has been designed and optimized for a 40-nm CMOS technology and it has been fully simulated at the transistor level. Possible fabrication and timing mismatches are corrected with foreground calibration. Simulation results shows that the multiplier can provide an output signal at 40 GHz starting from a 10-GHz input signal consuming about 5 mW.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126257570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Instrumentation with attoFarad resolution for electrochemical impedance measurements on molecular biosensors 分子生物传感器电化学阻抗测量用阿法拉分辨率仪器
Pub Date : 2009-07-12 DOI: 10.1109/RME.2009.5201360
M. Carminati, G. Ferrari, F. Gozzini, M. Sampietro
Sub-attoFarad capacitance resolution is experimentally reached, demonstrating the suitability of the proposed instrumentation for the development of impedimetric molecular biosensors. The modular design of the system is illustrated along with novel analog solutions (providing high sensitivity over a DC-1MHz bandwidth), digital lock-in elaboration techniques and their impact on the final instrument resolution.
实验达到亚阿法拉电容分辨率,证明了所提出的仪器对阻抗分子生物传感器发展的适用性。系统的模块化设计与新颖的模拟解决方案(在DC-1MHz带宽上提供高灵敏度)、数字锁定细化技术及其对最终仪器分辨率的影响一起进行了说明。
{"title":"Instrumentation with attoFarad resolution for electrochemical impedance measurements on molecular biosensors","authors":"M. Carminati, G. Ferrari, F. Gozzini, M. Sampietro","doi":"10.1109/RME.2009.5201360","DOIUrl":"https://doi.org/10.1109/RME.2009.5201360","url":null,"abstract":"Sub-attoFarad capacitance resolution is experimentally reached, demonstrating the suitability of the proposed instrumentation for the development of impedimetric molecular biosensors. The modular design of the system is illustrated along with novel analog solutions (providing high sensitivity over a DC-1MHz bandwidth), digital lock-in elaboration techniques and their impact on the final instrument resolution.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114469622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A low noise amplifier with on-chip matching network and integrated bulk Acoustic Wave resonators for high image rejection 具有片上匹配网络和集成体声波谐振器的低噪声放大器,具有高图像抑制能力
Pub Date : 2009-07-12 DOI: 10.1109/RME.2009.5201313
M. Dielacher, Martin Flatscher, W. Pribyl
This paper presents a 2.45 GHz low noise amplifier (LNA), built in a 0.13 µm CMOS process. It has an on-chip matching network and contains integrated bulk acoustic wave (BAW) resonators for narrow-band filtering at RF. The voltage gain of LNA and matching network is 31.5 dB with 4.7 dB noise figure (NF) at a current consumption of 2 mA.
本文提出了一种基于0.13µm CMOS工艺的2.45 GHz低噪声放大器(LNA)。它具有片上匹配网络,并包含用于射频窄带滤波的集成体声波(BAW)谐振器。LNA和匹配网络的电压增益为31.5 dB,噪声系数(NF)为4.7 dB,电流消耗为2ma。
{"title":"A low noise amplifier with on-chip matching network and integrated bulk Acoustic Wave resonators for high image rejection","authors":"M. Dielacher, Martin Flatscher, W. Pribyl","doi":"10.1109/RME.2009.5201313","DOIUrl":"https://doi.org/10.1109/RME.2009.5201313","url":null,"abstract":"This paper presents a 2.45 GHz low noise amplifier (LNA), built in a 0.13 µm CMOS process. It has an on-chip matching network and contains integrated bulk acoustic wave (BAW) resonators for narrow-band filtering at RF. The voltage gain of LNA and matching network is 31.5 dB with 4.7 dB noise figure (NF) at a current consumption of 2 mA.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121596838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A MEMS-based multi-sensor platform for consumer applications 面向消费类应用的基于mems的多传感器平台
Pub Date : 2009-07-12 DOI: 10.1109/RME.2009.5201361
B. Alandry, F. Mailly, L. Latorre, P. Nouet
This paper introduces an original MEMS multi-sensor platform for consumer applications. The whole set of sensors have been designed. manufactured and tested showing interesting performances for various type of applications. A demonstrator of a 3D orientation determination system has also been programmed on the platform proving the interest of such device.
本文介绍了一种新颖的消费类MEMS多传感器平台。完成了整套传感器的设计。制造和测试显示有趣的性能为各种类型的应用程序。在该平台上还编写了一个三维定向系统的演示程序,证明了该设备的可行性。
{"title":"A MEMS-based multi-sensor platform for consumer applications","authors":"B. Alandry, F. Mailly, L. Latorre, P. Nouet","doi":"10.1109/RME.2009.5201361","DOIUrl":"https://doi.org/10.1109/RME.2009.5201361","url":null,"abstract":"This paper introduces an original MEMS multi-sensor platform for consumer applications. The whole set of sensors have been designed. manufactured and tested showing interesting performances for various type of applications. A demonstrator of a 3D orientation determination system has also been programmed on the platform proving the interest of such device.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115728216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
期刊
2009 Ph.D. Research in Microelectronics and Electronics
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1