Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539777
D. Kriebel, Henry Schmidt, Michael Schiebold, M. Freitag, Benjamin Arnold, M. Naumann, J. Mehner
This paper demonstrates and discusses a highly automated approach for the design of micro-elec-tro-mechanical systems (MEMS) and system-level multidomain reduced order model generation. The presented techniques in form of rigid body models (RBM) and modal superposition models (MSUP) in conjunction with component mode synthesis (CMS) enable fast and efficient model adaption and optimization of components in the different phases of the MEMS design process by providing sufficiently fast and accurate modeling solutions. Different aspects and requirements of individual methods are discussed and compared.
{"title":"Design Automation for Micro-Electro-Mechanical Systems","authors":"D. Kriebel, Henry Schmidt, Michael Schiebold, M. Freitag, Benjamin Arnold, M. Naumann, J. Mehner","doi":"10.1109/SMICND.2018.8539777","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539777","url":null,"abstract":"This paper demonstrates and discusses a highly automated approach for the design of micro-elec-tro-mechanical systems (MEMS) and system-level multidomain reduced order model generation. The presented techniques in form of rigid body models (RBM) and modal superposition models (MSUP) in conjunction with component mode synthesis (CMS) enable fast and efficient model adaption and optimization of components in the different phases of the MEMS design process by providing sufficiently fast and accurate modeling solutions. Different aspects and requirements of individual methods are discussed and compared.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131862289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539842
H. Alsnani, J. Goss, O. Al-Ani, S. Olsen, P. Briddon, M. Rayson, Albert Horsfall
Native defects, including carbon vacancies and interstitials, are understood to be important defects that degrade device performance. In particular, during oxidation to form SiO2dielectric layers, carbon interstitials are thought to be injected into the SiC channels. Using density functional theory, the kinetics of diffusion of interstitial from the SiO2/4H-SiC(0001) interface has been investigated. The results show that the injection of a carbon interstitial from a site at the 4H-SiC-SiO2 interface is hindered by an additional 1 eV relative to the migration barrier of the native defect in bulk 4H-SiC.
{"title":"Investigation of Carbon Interstitials in the Vicinity of the Si02/4H-SiC(0001) Interface","authors":"H. Alsnani, J. Goss, O. Al-Ani, S. Olsen, P. Briddon, M. Rayson, Albert Horsfall","doi":"10.1109/SMICND.2018.8539842","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539842","url":null,"abstract":"Native defects, including carbon vacancies and interstitials, are understood to be important defects that degrade device performance. In particular, during oxidation to form SiO2dielectric layers, carbon interstitials are thought to be injected into the SiC channels. Using density functional theory, the kinetics of diffusion of interstitial from the SiO2/4H-SiC(0001) interface has been investigated. The results show that the injection of a carbon interstitial from a site at the 4H-SiC-SiO2 interface is hindered by an additional 1 eV relative to the migration barrier of the native defect in bulk 4H-SiC.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132437157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539753
L. Benea, M. Bawedin, S. Cristoloveanu, I. Ionica, M. Banu, M. Simion, M. Kusko, C. Delacour
This work proposes a novel method for DNA detection by using the ψ-MOSFET configuration. Systematic measurements of the drain current vs. gate voltage revealed an important shift of the characteristics corresponding to the charge of the biochemical species attached to the top surface of the device. The results were validated by fluorescent scanning. The advantages of this method are its simplicity and sensitivity.
{"title":"ψ-MOSFET Configuration for DNA Detection","authors":"L. Benea, M. Bawedin, S. Cristoloveanu, I. Ionica, M. Banu, M. Simion, M. Kusko, C. Delacour","doi":"10.1109/SMICND.2018.8539753","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539753","url":null,"abstract":"This work proposes a novel method for DNA detection by using the ψ-MOSFET configuration. Systematic measurements of the drain current vs. gate voltage revealed an important shift of the characteristics corresponding to the charge of the biochemical species attached to the top surface of the device. The results were validated by fluorescent scanning. The advantages of this method are its simplicity and sensitivity.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131243124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539826
D. Randjelović
This work demonstrates how binary gas mixture composition and pressure can be simultaneously determined based on the value of thermal time constant of thermopile-based MEMS sensor. Self-developed analytical model for transient analysis is applied initially to define optimal design of the thermal sensor in terms of the residual n-Si thickness and the number of thermocouples. Procedure for detection of gas mixture composition and pressure was implemented on thermal sensor placed in binary gas mixtures used as shielding gases in industrial processes of welding, cutting and melting of metals.
{"title":"Analytical Modelling Approach in Study of the Transient Response of Thermopile-Based MEMS Sensors Applied for Simultaneous Detection of Pressure and Gas Composition","authors":"D. Randjelović","doi":"10.1109/SMICND.2018.8539826","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539826","url":null,"abstract":"This work demonstrates how binary gas mixture composition and pressure can be simultaneously determined based on the value of thermal time constant of thermopile-based MEMS sensor. Self-developed analytical model for transient analysis is applied initially to define optimal design of the thermal sensor in terms of the residual n-Si thickness and the number of thermocouples. Procedure for detection of gas mixture composition and pressure was implemented on thermal sensor placed in binary gas mixtures used as shielding gases in industrial processes of welding, cutting and melting of metals.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"589 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116309678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539756
F. Roccaforte, G. Greco, P. Fiorenza
This paper aims to give a short overview on some relevant processing issues existing in SiC and GaN power devices technology. The main focus is put on the importance of the channel mobility in transistors, which is one of the keys to reduce RON and power dissipation. Specifically, in the case of the 4H-SiC planar MOSFETs the most common solutions and recent trends to improve the channel mobility are presented. In the case of GaN, the viable routes to achieve normally-off HEMTs operation are briefly introduced, giving emphasis to the case of the recessed hybrid MISHEMT.
{"title":"Processing Issues in SiC and GaN Power Devices Technology: The Cases of 4H-SiC Planar MOSFET and Recessed Hybrid GaN MISHEMT","authors":"F. Roccaforte, G. Greco, P. Fiorenza","doi":"10.1109/SMICND.2018.8539756","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539756","url":null,"abstract":"This paper aims to give a short overview on some relevant processing issues existing in SiC and GaN power devices technology. The main focus is put on the importance of the channel mobility in transistors, which is one of the keys to reduce RON and power dissipation. Specifically, in the case of the 4H-SiC planar MOSFETs the most common solutions and recent trends to improve the channel mobility are presented. In the case of GaN, the viable routes to achieve normally-off HEMTs operation are briefly introduced, giving emphasis to the case of the recessed hybrid MISHEMT.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121061883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539837
K. Y. Chan, X. Li, R. Ramer
The paper proposed a new fabrication technique for microwave devices using liquid metal conductor and 3D printed dielectric containers. 3D printed conductive dielectric materials provide electrical connections to the liquid metal at the input and output ports. These input/ output ports and the dielectric container were analyzed to determine their impact on the RF performance. Simulation results of a WR62 rectangular waveguide transmission line, waveguide resonator, a three-pole iris filter and a horn antenna were presented. The RF performance achieved satisfactory RF performance validating the proposed fabrication concept.
{"title":"Investigation of Liquid Metal and FDM 3D Printed Microwave Devices","authors":"K. Y. Chan, X. Li, R. Ramer","doi":"10.1109/SMICND.2018.8539837","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539837","url":null,"abstract":"The paper proposed a new fabrication technique for microwave devices using liquid metal conductor and 3D printed dielectric containers. 3D printed conductive dielectric materials provide electrical connections to the liquid metal at the input and output ports. These input/ output ports and the dielectric container were analyzed to determine their impact on the RF performance. Simulation results of a WR62 rectangular waveguide transmission line, waveguide resonator, a three-pole iris filter and a horn antenna were presented. The RF performance achieved satisfactory RF performance validating the proposed fabrication concept.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"242 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115950445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539821
Ioana-Maria Glura, C. Pachiu, M. Popescu, B. Bita, O. Ionescu, M. Suchea
Art preservation, conservation and restauration is a very important niche field that may beneficiate of recent advances in sensor technology. Identification of parameters for potential monitoring the temporal evolution of artworks (wood, stone, textiles, paints, putties etc.) is a first step in designing novel specialized and personalized sensing and detection devices. This work regards a particular comparative study of a new putty material for restauration and old unknown putty from the beginning of XIXth century for preliminary identification of parameters for potential monitoring the temporal evolution of putties used in artworks restauration process.
{"title":"Methods for Art Preservation and Restauration. Identification of Parameters for Potential Monitoring the Temporal Evolution of Putties","authors":"Ioana-Maria Glura, C. Pachiu, M. Popescu, B. Bita, O. Ionescu, M. Suchea","doi":"10.1109/SMICND.2018.8539821","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539821","url":null,"abstract":"Art preservation, conservation and restauration is a very important niche field that may beneficiate of recent advances in sensor technology. Identification of parameters for potential monitoring the temporal evolution of artworks (wood, stone, textiles, paints, putties etc.) is a first step in designing novel specialized and personalized sensing and detection devices. This work regards a particular comparative study of a new putty material for restauration and old unknown putty from the beginning of XIXth century for preliminary identification of parameters for potential monitoring the temporal evolution of putties used in artworks restauration process.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123545854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539742
C. Ravariu, E. Manea, C. Parvulescu, F. Babarada, A. Popescu, Avireni Srinivasulu
Recently reported, the Nothing On Insulator (NOI) device is based on the tunneling through a ultra-thin insulator placed between two semiconductors. A direct implementation of the NOI transistor that requires a vertical cavity etching in Si of 2nm width is a difficult technological task. Therefore, this paper proposes a simpler structure, based on the planar Si-technology. Rotating the NOI structure by 90°, the width of the cavity becomes the thickness of the cavity. If the vacuum is replaced by oxide, results a MOS capacitor without lateral junction but with lateral drain that is called p-NOI (planar-NOI variant). The p-NOI structure is simulated in Atlas and the results are compared with measured currents through the gate of fabricated MOSFETs. The main conduction mechanism is Fowler-Nordheim and secondary is quantum tunneling. The tunneling currents of the p-NOI structures obeys to the exponential law and are similar to the gate MOSFET currents. The currents are dominated by the insulator thickness and the gate voltage.
{"title":"The Gate Current in MOSFETs Versus Planar-NOI Devices","authors":"C. Ravariu, E. Manea, C. Parvulescu, F. Babarada, A. Popescu, Avireni Srinivasulu","doi":"10.1109/SMICND.2018.8539742","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539742","url":null,"abstract":"Recently reported, the Nothing On Insulator (NOI) device is based on the tunneling through a ultra-thin insulator placed between two semiconductors. A direct implementation of the NOI transistor that requires a vertical cavity etching in Si of 2nm width is a difficult technological task. Therefore, this paper proposes a simpler structure, based on the planar Si-technology. Rotating the NOI structure by 90°, the width of the cavity becomes the thickness of the cavity. If the vacuum is replaced by oxide, results a MOS capacitor without lateral junction but with lateral drain that is called p-NOI (planar-NOI variant). The p-NOI structure is simulated in Atlas and the results are compared with measured currents through the gate of fabricated MOSFETs. The main conduction mechanism is Fowler-Nordheim and secondary is quantum tunneling. The tunneling currents of the p-NOI structures obeys to the exponential law and are similar to the gate MOSFET currents. The currents are dominated by the insulator thickness and the gate voltage.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132338681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539787
K. Y. Chan, X. Li, Y. Fu, R. Ramer
This paper presents the study and simulation results of a millimetre-wave based device for cancerous skin tissue detection. A probe that could be implemented using inexpensive silicon planar fabrication is proposed. It permits easy system-on-chip integration with other silicon devices to achieve an entire measuring tool for easy deployment. We used the available open literature basal cell carcinoma (BCC) data considerations, for initial development and simulation validation. This study showed that the reflection coefficients vs frequency could capture useful information indicating the possible BCC presence at millimetre-wave frequencies by using both magnitude and phase of the reflection coefficients. It was found that a dual-band approach, 100 to 150 GHz and 200 to 250 GHz, has the ability to highlight deviations from the normal skin.
{"title":"Continuous-Wave Mm-Wave Waveguide-Based Probe for Skin Tissue Characterisation","authors":"K. Y. Chan, X. Li, Y. Fu, R. Ramer","doi":"10.1109/SMICND.2018.8539787","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539787","url":null,"abstract":"This paper presents the study and simulation results of a millimetre-wave based device for cancerous skin tissue detection. A probe that could be implemented using inexpensive silicon planar fabrication is proposed. It permits easy system-on-chip integration with other silicon devices to achieve an entire measuring tool for easy deployment. We used the available open literature basal cell carcinoma (BCC) data considerations, for initial development and simulation validation. This study showed that the reflection coefficients vs frequency could capture useful information indicating the possible BCC presence at millimetre-wave frequencies by using both magnitude and phase of the reflection coefficients. It was found that a dual-band approach, 100 to 150 GHz and 200 to 250 GHz, has the ability to highlight deviations from the normal skin.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131926089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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