Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838536
J. Ducrée, H. Gruhler, N. Hey, M. Muller, S. Békési, M. Freygang, H. Sandmaiser, R. Zengerle
This article outlines the new non-contact TOPSPOT method for printing microarrays in a highly parallelized fashion. It is based on a micromachined print head incorporating a central microarray of presently up to 96 vertical nozzles on the output side. Droplets featuring volumes down to 1nl aligned in a 500 /spl mu/m grid are simultaneously ejected by applying a steep air pressure ramp to the open upper side of the liquid. Each of these nozzles is connected to a distinct fluidic reservoir constituting the interface to the macro world. To allow an automated replenishing of the chip, the alignment of the reservoirs is amenable for liquid handling via standard pipetting robots. Depending on the design of the print head, a maximum of 20 /spl mu/l can be stored thus allowing one to dispend about 20.000 droplets of equal quality in a row. Besides its suitability for a robust biochip manufacturing facility in the laboratory, the print head is also well-integrable in a high-throughput production plant. These versions are scheduled to become commercially available in 2000.
本文概述了一种新的非接触式TOPSPOT方法，用于以高度并行化的方式打印微阵列。它是基于一个微机械打印头结合中央微阵列目前多达96个垂直喷嘴在输出侧。液滴的体积低至1nl，排列在500 /spl / mu/m的网格中，同时通过在液体的开放上方施加陡峭的空气压力坡道喷射出来。这些喷嘴中的每一个都连接到一个不同的储液器，构成了与宏观世界的界面。为了实现芯片的自动补充，储层的对齐可以通过标准移液机器人进行液体处理。根据打印头的设计，最多可存储20 μ l / μ l，从而允许连续分发约20,000个相同质量的液滴。除了适合实验室中强大的生物芯片制造设施外，打印头也可以很好地集成到高通量生产工厂中。这些版本计划在2000年投入商用。
{"title":"TOPSPOT-a new method for the fabrication of microarrays","authors":"J. Ducrée, H. Gruhler, N. Hey, M. Muller, S. Békési, M. Freygang, H. Sandmaiser, R. Zengerle","doi":"10.1109/MEMSYS.2000.838536","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838536","url":null,"abstract":"This article outlines the new non-contact TOPSPOT method for printing microarrays in a highly parallelized fashion. It is based on a micromachined print head incorporating a central microarray of presently up to 96 vertical nozzles on the output side. Droplets featuring volumes down to 1nl aligned in a 500 /spl mu/m grid are simultaneously ejected by applying a steep air pressure ramp to the open upper side of the liquid. Each of these nozzles is connected to a distinct fluidic reservoir constituting the interface to the macro world. To allow an automated replenishing of the chip, the alignment of the reservoirs is amenable for liquid handling via standard pipetting robots. Depending on the design of the print head, a maximum of 20 /spl mu/l can be stored thus allowing one to dispend about 20.000 droplets of equal quality in a row. Besides its suitability for a robust biochip manufacturing facility in the laboratory, the print head is also well-integrable in a high-throughput production plant. These versions are scheduled to become commercially available in 2000.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128068355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838482
N. Takeda
This paper describes Ball semiconductor technology that realizes integrated circuits and other devices on 1-milimeter sphere. Single crystallization, no-contact processing, spherical lithography, 3D VLSI design and VLSI by clustering are five key enabling technologies of the Ball semiconductor. Three major product categories of the Ball, integrated circuits, RF applications and MEMS (Micro Electro Mechanical System), are described here. Especially electro-statically levitated 3-axis accelerometer is mentioned as an application of Ball semiconductor technology to MEMS.
{"title":"Ball semiconductor technology and its application to MEMS","authors":"N. Takeda","doi":"10.1109/MEMSYS.2000.838482","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838482","url":null,"abstract":"This paper describes Ball semiconductor technology that realizes integrated circuits and other devices on 1-milimeter sphere. Single crystallization, no-contact processing, spherical lithography, 3D VLSI design and VLSI by clustering are five key enabling technologies of the Ball semiconductor. Three major product categories of the Ball, integrated circuits, RF applications and MEMS (Micro Electro Mechanical System), are described here. Especially electro-statically levitated 3-axis accelerometer is mentioned as an application of Ball semiconductor technology to MEMS.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"59 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133642264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838480
C. Hierold
CMOS including micromechanics using polysilicon structures as functional layers is a promising technology for production of Intelligent CMOS Sensors. Its cost and performance advantages allow to address volume markets like monolithic integrated sensors for automotive application. Using modern silicon processes and their potential for large scale integration, new functions like on-chip calibration and diagnosis are possible. Furthermore, it offers direct digital output signals which is ideal for data processing in microcontrollers. In this technology, the non electric functional blocks (e.g. membranes for pressure sensors) can be miniaturized in a way so that they do not impose a chip real-estate penalty. This immediately reduces the production cost immensely. We will demonstrate the superiority of CMOS as technology for integrated sensors by two examples: An integrated pressure sensor and an integrated fingertip sensor system.
{"title":"Intelligent CMOS sensors","authors":"C. Hierold","doi":"10.1109/MEMSYS.2000.838480","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838480","url":null,"abstract":"CMOS including micromechanics using polysilicon structures as functional layers is a promising technology for production of Intelligent CMOS Sensors. Its cost and performance advantages allow to address volume markets like monolithic integrated sensors for automotive application. Using modern silicon processes and their potential for large scale integration, new functions like on-chip calibration and diagnosis are possible. Furthermore, it offers direct digital output signals which is ideal for data processing in microcontrollers. In this technology, the non electric functional blocks (e.g. membranes for pressure sensors) can be miniaturized in a way so that they do not impose a chip real-estate penalty. This immediately reduces the production cost immensely. We will demonstrate the superiority of CMOS as technology for integrated sensors by two examples: An integrated pressure sensor and an integrated fingertip sensor system.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133131374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838528
X. Li, T. Abe, M. Esashi
We have developed a deep reactive ion etching of Pyrex glass in SF/sub 6/ plasma. High etch rate (/spl sim/0.6 /spl mu/m/min) and smooth surface (Ra-4 nm) were achieved at low pressure (0.2 Pa) and high self-bias (-390 V). This result indicates energetic ions for physical sputtering and for enhancing chemical reactions are required to etch materials which produce nonvolatile reaction products. Vertical etch profile (base angle /spl sim/88/spl deg/), high aspect ratio (>10) and through-out etching of Pyrex glass (200 /spl mu/m in thickness) were achieved when the mask opening is narrower than 20 /spl mu/m. Relatively low selectivity to the mask material due to the energetic ion is overcame using thick and vertical electroplated Ni film as a mask. We also find out the base angle of the etch profile depends on the mask profile and the opening width.
{"title":"Deep reactive ion etching of Pyrex glass","authors":"X. Li, T. Abe, M. Esashi","doi":"10.1109/MEMSYS.2000.838528","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838528","url":null,"abstract":"We have developed a deep reactive ion etching of Pyrex glass in SF/sub 6/ plasma. High etch rate (/spl sim/0.6 /spl mu/m/min) and smooth surface (Ra-4 nm) were achieved at low pressure (0.2 Pa) and high self-bias (-390 V). This result indicates energetic ions for physical sputtering and for enhancing chemical reactions are required to etch materials which produce nonvolatile reaction products. Vertical etch profile (base angle /spl sim/88/spl deg/), high aspect ratio (>10) and through-out etching of Pyrex glass (200 /spl mu/m in thickness) were achieved when the mask opening is narrower than 20 /spl mu/m. Relatively low selectivity to the mask material due to the energetic ion is overcame using thick and vertical electroplated Ni film as a mask. We also find out the base angle of the etch profile depends on the mask profile and the opening width.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133818578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838550
Linan Jiang, M. Wong, Y. Zohar
A microchannel heat sink system, consisting of parallel microchannels, distributed temperature micro-sensors and a local heater, has been fabricated and characterized. V-grooves with hydraulic diameter of either 40 /spl mu/m or 80 /spl mu/m were formed by bulk silicon etching. The heater and temperature microsensor array were fabricated using surface micromachining. Microchannels were realized by bonding a glass wafer to the silicon substrate, resulting in a transparent cover for flow visualization. Phase change during the boiling process was studied under forced convection conditions, where DI water was used as the working fluid. No boiling plateau, associated with latent heat, has been observed in the boiling curves of microchannel heat sinks. Flow visualization was carried out to understand the boiling mechanism in such a system. Three phase-change modes were observed depending on the input power level. Local nucleation boiling within the microchannels occurred at low power level. At moderate levels, large bubbles developed at the inlet/outlet regions, and the upstream bubbles were forced through the channels and out of the system. At higher input power levels, a stable annular flow mode was observed, where a thin liquid film coated each channel wall until critical heat flux conditions developed with a dryout of the system.
{"title":"Phase change in microchannel heat sink under forced convection boiling","authors":"Linan Jiang, M. Wong, Y. Zohar","doi":"10.1109/MEMSYS.2000.838550","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838550","url":null,"abstract":"A microchannel heat sink system, consisting of parallel microchannels, distributed temperature micro-sensors and a local heater, has been fabricated and characterized. V-grooves with hydraulic diameter of either 40 /spl mu/m or 80 /spl mu/m were formed by bulk silicon etching. The heater and temperature microsensor array were fabricated using surface micromachining. Microchannels were realized by bonding a glass wafer to the silicon substrate, resulting in a transparent cover for flow visualization. Phase change during the boiling process was studied under forced convection conditions, where DI water was used as the working fluid. No boiling plateau, associated with latent heat, has been observed in the boiling curves of microchannel heat sinks. Flow visualization was carried out to understand the boiling mechanism in such a system. Three phase-change modes were observed depending on the input power level. Local nucleation boiling within the microchannels occurred at low power level. At moderate levels, large bubbles developed at the inlet/outlet regions, and the upstream bubbles were forced through the channels and out of the system. At higher input power levels, a stable annular flow mode was observed, where a thin liquid film coated each channel wall until critical heat flux conditions developed with a dryout of the system.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130331003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838497
N. Kerness, A. Koll, A. Schaufelbuhl, C. Hagleitner, A. Hierlemann, O. Brand, H. Baltes
New micromachined calorimetric chemical sensors based on an n-well island structure have been designed, fabricated in industrial CMOS technology, and tested. The suspended island structure is covered with a polymer and changes its temperature upon absorption or desorption of analyte. The temperature change is recorded by integrated polysilicon/aluminum thermopiles. A polysilicon or metal heating resistor covers the n-well structure which allows a more accurate calibration compared to our previous design . The system provides a physical sensitivity of 34 and 26.5 mV//spl mu/W for the square and rectangular shaped membrane devices, respectively. Sensitivity and performance of the calorimetric chemical microsystem are shown by measurements for different volatile organic compounds. The system has a sensitivity of 0.045 and 0.049 mV/ppm to ethanol and 0.209 and 0.229 mV/ppm to toluene for the square and rectangular membrane devices, respectively.
{"title":"N-well based CMOS calorimetric chemical sensors","authors":"N. Kerness, A. Koll, A. Schaufelbuhl, C. Hagleitner, A. Hierlemann, O. Brand, H. Baltes","doi":"10.1109/MEMSYS.2000.838497","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838497","url":null,"abstract":"New micromachined calorimetric chemical sensors based on an n-well island structure have been designed, fabricated in industrial CMOS technology, and tested. The suspended island structure is covered with a polymer and changes its temperature upon absorption or desorption of analyte. The temperature change is recorded by integrated polysilicon/aluminum thermopiles. A polysilicon or metal heating resistor covers the n-well structure which allows a more accurate calibration compared to our previous design . The system provides a physical sensitivity of 34 and 26.5 mV//spl mu/W for the square and rectangular shaped membrane devices, respectively. Sensitivity and performance of the calorimetric chemical microsystem are shown by measurements for different volatile organic compounds. The system has a sensitivity of 0.045 and 0.049 mV/ppm to ethanol and 0.209 and 0.229 mV/ppm to toluene for the square and rectangular membrane devices, respectively.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125708390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838604
J. Nee, R. Conant, Matthew R. Hart, Richard S. Muller, Kam Y. Lau
We have developed a new tensile optical-surface (TOS) process to produce optically flat micromirrors capable of scanning at high frequencies. A polysilicon membrane is stretched across a stiff, single-crystal silicon-rib structure. This structure increases the stiffness of the mirror without significantly increasing its mass. The low mass makes possible high operating frequencies without deformation that could significantly compromise the optical performance of the mirror. Electrostatic comb drives, made of thick single-crystal silicon, provide large forces that enable mirror operation at tens of kHz.
{"title":"Stretched-film micromirrors for improved optical flatness","authors":"J. Nee, R. Conant, Matthew R. Hart, Richard S. Muller, Kam Y. Lau","doi":"10.1109/MEMSYS.2000.838604","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838604","url":null,"abstract":"We have developed a new tensile optical-surface (TOS) process to produce optically flat micromirrors capable of scanning at high frequencies. A polysilicon membrane is stretched across a stiff, single-crystal silicon-rib structure. This structure increases the stiffness of the mirror without significantly increasing its mass. The low mass makes possible high operating frequencies without deformation that could significantly compromise the optical performance of the mirror. Electrostatic comb drives, made of thick single-crystal silicon, provide large forces that enable mirror operation at tens of kHz.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129108508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838592
Jo-ey Wong, Jeffrey H. Lang, Martin, Schmidt
This paper presents the design, analysis, fabrication, and testing of an electrostatically-actuated MEMS power switch. The device can be switched electrostatically (20 V), pneumatically (1200 Pa), or through combined actuation. Prototype switches carry currents in excess of 400 mA in either current direction with a contact resistance as low as 14 m/spl Omega/. Their off-state resistance is higher than the 30 M/spl Omega/ limit of the test equipment. Breakdown voltages of 300 V have been achieved across their small air gaps. Their nominal switching time is 20 ms. Extended lifetime testing has not been carried out but our tests to date show that the prototype switches operate more than 4000 cycles without significant degradation in their contact resistance. Finally, a protective switching scheme is proposed to minimize contact wear due to arcing during switch opening and closing.
{"title":"An electrostatically-actuated MEMS switch for power applications","authors":"Jo-ey Wong, Jeffrey H. Lang, Martin, Schmidt","doi":"10.1109/MEMSYS.2000.838592","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838592","url":null,"abstract":"This paper presents the design, analysis, fabrication, and testing of an electrostatically-actuated MEMS power switch. The device can be switched electrostatically (20 V), pneumatically (1200 Pa), or through combined actuation. Prototype switches carry currents in excess of 400 mA in either current direction with a contact resistance as low as 14 m/spl Omega/. Their off-state resistance is higher than the 30 M/spl Omega/ limit of the test equipment. Breakdown voltages of 300 V have been achieved across their small air gaps. Their nominal switching time is 20 ms. Extended lifetime testing has not been carried out but our tests to date show that the prototype switches operate more than 4000 cycles without significant degradation in their contact resistance. Finally, a protective switching scheme is proposed to minimize contact wear due to arcing during switch opening and closing.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134623067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838573
Yoshihiro Ozaki, Tomoyuki Ohyama, T. Yasuda, I. Shimoyama
A new conceptual air flow sensor modeled on wind-receptor hairs of insects which can detect low velocity air flow is demonstrated. Since the viscous force is dominant at micro size, the velocity of air flow can be determined by measuring the force on a sensory hair. Two mechanical structures modeled on insect sensory hairs have been fabricated. An array of a 1-DOF (Degree Of Freedom) sensory hairs has selectivity of frequencies. A 2-DOF sensory hair array can detect the direction angle of air flow. Both sensors have cantilevers and strain gauges fabricated at the bottom of the sensory hairs. The output voltage was proportional to the velocity of air flow in good agreement with the theory. Both the 1-DOF sensory hair and the 2-DOF sensory hair arrays detected the velocity of air flow from several tens of cm/s to 2 m/s. Also, the 2-DOF sensory hair array detected the direction angle of 360 degrees as a function of a sinusoidal curve.
{"title":"An air flow sensor modeled on wind receptor hairs of insects","authors":"Yoshihiro Ozaki, Tomoyuki Ohyama, T. Yasuda, I. Shimoyama","doi":"10.1109/MEMSYS.2000.838573","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838573","url":null,"abstract":"A new conceptual air flow sensor modeled on wind-receptor hairs of insects which can detect low velocity air flow is demonstrated. Since the viscous force is dominant at micro size, the velocity of air flow can be determined by measuring the force on a sensory hair. Two mechanical structures modeled on insect sensory hairs have been fabricated. An array of a 1-DOF (Degree Of Freedom) sensory hairs has selectivity of frequencies. A 2-DOF sensory hair array can detect the direction angle of air flow. Both sensors have cantilevers and strain gauges fabricated at the bottom of the sensory hairs. The output voltage was proportional to the velocity of air flow in good agreement with the theory. Both the 1-DOF sensory hair and the 2-DOF sensory hair arrays detected the velocity of air flow from several tens of cm/s to 2 m/s. Also, the 2-DOF sensory hair array detected the direction angle of 360 degrees as a function of a sinusoidal curve.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131518505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838531
Y. Saotome, A. Inoue
Microformability of new amorphous alloys in the supercooled liquid state and microforming techniques for the materials are shown. In the supercooled liquid state, the materials reveal perfect Newtonian viscous flow characteristics and furthermore exhibit an excellent property of microformability on a submicron scale. Microforming techniques are shown as follows; microextrusion with micro-dies made of photochemically machinable glass and made of laser-micromachined polyimide, submicron imprinting with silicon die fabricated by EB lithography and etching, microforging of microgear of 10 /spl mu/m in module with microdie fabricated by UV-LIGA process. As a result, the materials are expected to become some of the most useful materials for fabricating MEMS.
{"title":"New amorphous alloys as micromaterials and the processing technologies","authors":"Y. Saotome, A. Inoue","doi":"10.1109/MEMSYS.2000.838531","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838531","url":null,"abstract":"Microformability of new amorphous alloys in the supercooled liquid state and microforming techniques for the materials are shown. In the supercooled liquid state, the materials reveal perfect Newtonian viscous flow characteristics and furthermore exhibit an excellent property of microformability on a submicron scale. Microforming techniques are shown as follows; microextrusion with micro-dies made of photochemically machinable glass and made of laser-micromachined polyimide, submicron imprinting with silicon die fabricated by EB lithography and etching, microforging of microgear of 10 /spl mu/m in module with microdie fabricated by UV-LIGA process. As a result, the materials are expected to become some of the most useful materials for fabricating MEMS.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133337444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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