Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838537
P. Griss, P. Enoksson, H. Tolvanen-Laakso, P. Merilainen, S. Ollmar, G. Stemme
We describe the microfabrication, packaging and testing of a dry biopotential electrode (i.e. electrolytic gel is not required), The electrode consists of an array of micro-dimensioned, very sharp spikes (i.e. needles) designed for penetration of human skin which circumvents high impedance problems associated with layers of the outer skin. Deep reactive ion etching (DRIE) technology was used to fabricate the spikes. The main advantages of these electrodes include a fast and uncomplicated application procedure, low electrode-skin-electrode impedance (lower than standard electrodes), and comfortable use. The spiked electrode offers a promising alternative to standard electrodes in biomedical applications (i.e. monitoring EEG signals) and is of interest in research of new biomedical methods.
我们描述了干生物电位电极(即不需要电解凝胶)的微制造，包装和测试。该电极由一系列微尺寸，非常锋利的尖峰(即针)组成，设计用于穿透人体皮肤，绕过与外皮层相关的高阻抗问题。采用深度反应离子刻蚀(Deep reactive ion etching, DRIE)技术制备了尖峰。这些电极的主要优点包括快速和简单的应用程序，低电极-皮肤电极阻抗(低于标准电极)和舒适的使用。尖刺电极在生物医学应用(即监测脑电图信号)中为标准电极提供了一种有希望的替代方案，并且是研究新的生物医学方法的兴趣。
{"title":"Spiked biopotential electrodes","authors":"P. Griss, P. Enoksson, H. Tolvanen-Laakso, P. Merilainen, S. Ollmar, G. Stemme","doi":"10.1109/MEMSYS.2000.838537","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838537","url":null,"abstract":"We describe the microfabrication, packaging and testing of a dry biopotential electrode (i.e. electrolytic gel is not required), The electrode consists of an array of micro-dimensioned, very sharp spikes (i.e. needles) designed for penetration of human skin which circumvents high impedance problems associated with layers of the outer skin. Deep reactive ion etching (DRIE) technology was used to fabricate the spikes. The main advantages of these electrodes include a fast and uncomplicated application procedure, low electrode-skin-electrode impedance (lower than standard electrodes), and comfortable use. The spiked electrode offers a promising alternative to standard electrodes in biomedical applications (i.e. monitoring EEG signals) and is of interest in research of new biomedical methods.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121989536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838525
Duck‐Jung Lee, B. Ju, Yun‐Hi Lee, Jin Jang, M. Oh
In this work, we have developed a new high vacuum packaging method using a glass-to-glass bonding for the application to microelectronic devices such as field emission display (FED). The glass-to-glass anodic bonding was established and optimized using introducing thin amorphous silicon (a-Si) interlayer. Also, we propose that the amount of oxygen ions is one of the important factors during the bonding process, as confirmed from the SIMS and XPS analyses for the reaction region of Si-O bond in interface. Our method was very effective to reduce the bonding temperature and make the high vacuum package of microelectronic devices over 10/sup -4/ Torr. Finally, to evaluate the vacuum sealing capability of a FED panel packaged by the method, the leak characteristics of the vacuum was examined by spinning rotor gauge (SRG) during 6 months and the electron emission properties of the panel were measured continuously for time variation during 26 days.
{"title":"Glass- to-glass anodic bonding for high vacuum packaging of microelectronics and its stability","authors":"Duck‐Jung Lee, B. Ju, Yun‐Hi Lee, Jin Jang, M. Oh","doi":"10.1109/MEMSYS.2000.838525","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838525","url":null,"abstract":"In this work, we have developed a new high vacuum packaging method using a glass-to-glass bonding for the application to microelectronic devices such as field emission display (FED). The glass-to-glass anodic bonding was established and optimized using introducing thin amorphous silicon (a-Si) interlayer. Also, we propose that the amount of oxygen ions is one of the important factors during the bonding process, as confirmed from the SIMS and XPS analyses for the reaction region of Si-O bond in interface. Our method was very effective to reduce the bonding temperature and make the high vacuum package of microelectronic devices over 10/sup -4/ Torr. Finally, to evaluate the vacuum sealing capability of a FED panel packaged by the method, the leak characteristics of the vacuum was examined by spinning rotor gauge (SRG) during 6 months and the electron emission properties of the panel were measured continuously for time variation during 26 days.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114324009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838585
H. Ueno, N. Nishi, S. Sugiyama
In this paper, we present the fabrication of sub-micron structures with high aspect ratio for practical and high performance microelectromechanical systems (MEMS) using deep X-ray lithography. It is necessary for practical and high performance MEMS to be fabricated microstructures with sub-micron widths and gaps (lines and spaces). In order to fabricate the sub-micron microstructures, sub-micron deep X-ray lithography has been investigated. As a result, a sub-micron PMMA structure with 0.2 /spl mu/m minimum width, 6 /spl mu/m length and 17 /spl mu/m height was fabricated by deep X-ray lithography using an X-ray mask with thick X-ray absorbers having sub-micron width.
{"title":"Fabrication of sub-micron structures with high aspect ratio for MEMS using deep X-ray lithography","authors":"H. Ueno, N. Nishi, S. Sugiyama","doi":"10.1109/MEMSYS.2000.838585","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838585","url":null,"abstract":"In this paper, we present the fabrication of sub-micron structures with high aspect ratio for practical and high performance microelectromechanical systems (MEMS) using deep X-ray lithography. It is necessary for practical and high performance MEMS to be fabricated microstructures with sub-micron widths and gaps (lines and spaces). In order to fabricate the sub-micron microstructures, sub-micron deep X-ray lithography has been investigated. As a result, a sub-micron PMMA structure with 0.2 /spl mu/m minimum width, 6 /spl mu/m length and 17 /spl mu/m height was fabricated by deep X-ray lithography using an X-ray mask with thick X-ray absorbers having sub-micron width.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130647913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838507
C. Chung, M. Allen
Electrical isolation of bulk micromachined single crystal silicon MEMS devices is demonstrated using through-wafer junction isolation. Through-wafer npn junctions are fabricated using "temperature gradient zone melting" or "thermomigration" of aluminum in n-type silicon. The npn structures isolate various regions of the single crystal silicon from one another by acting as back-to-back diodes. Thermomigration is a potentially high-throughput process that is consistent with batch fabrication principles, avoids the necessity of a handle wafer, and retains the mechanical integrity of single crystal silicon. By use of this process, electrically isolated sensors and actuators can be fabricated from a single wafer of silicon. Breakdown voltages of multiple thermomigrated npn junctions in excess of 1500 V are demonstrated. The utility of this technique is shown by fabricating a comb-drive electrostatic actuator from a single silicon wafer and driving it at 162 Vpp.
{"title":"Electrical isolation of bulk silicon MEMS devices via thermomigration","authors":"C. Chung, M. Allen","doi":"10.1109/MEMSYS.2000.838507","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838507","url":null,"abstract":"Electrical isolation of bulk micromachined single crystal silicon MEMS devices is demonstrated using through-wafer junction isolation. Through-wafer npn junctions are fabricated using \"temperature gradient zone melting\" or \"thermomigration\" of aluminum in n-type silicon. The npn structures isolate various regions of the single crystal silicon from one another by acting as back-to-back diodes. Thermomigration is a potentially high-throughput process that is consistent with batch fabrication principles, avoids the necessity of a handle wafer, and retains the mechanical integrity of single crystal silicon. By use of this process, electrically isolated sensors and actuators can be fabricated from a single wafer of silicon. Breakdown voltages of multiple thermomigrated npn junctions in excess of 1500 V are demonstrated. The utility of this technique is shown by fabricating a comb-drive electrostatic actuator from a single silicon wafer and driving it at 162 Vpp.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"110 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132453574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838557
Y. Yee, H. Nam, See‐Hyung Lee, J. Bu, Y. Jeon, Seong-Moon Cho
A micromirror actuated by piezoelectric cantilevers is proposed as a fine-tracking device for high-density optical data storage. Metal/PZT/metal thin film actuators translate an integrated micromirror along the out-of-plane vertical direction. The parallel motion of the micromirror steers linearly the optical path of the reflected laser beam. Numerical analysis shows that the actuated micromirror can satisfy the tracking speed imposed by the requirement on the access time for the high-density optical data storage up to few tens Gbit/in/sup 2/. In this paper, preliminary characteristics of the micromachined PZT actuated micromirror (PAM) are reported. The design and the fabrication process of the PZT actuated micromirror are described. Only a 3600 /spl Aring/-thick PZT film deposited by sol-gel process shows both good electrical and mechanical characteristics for the actuators. The micromirror can be easily actuated up to several micrometers under low voltage operation condition.
{"title":"PZT actuated micromirror for nano-tracking of laser beam for high-density optical data storage","authors":"Y. Yee, H. Nam, See‐Hyung Lee, J. Bu, Y. Jeon, Seong-Moon Cho","doi":"10.1109/MEMSYS.2000.838557","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838557","url":null,"abstract":"A micromirror actuated by piezoelectric cantilevers is proposed as a fine-tracking device for high-density optical data storage. Metal/PZT/metal thin film actuators translate an integrated micromirror along the out-of-plane vertical direction. The parallel motion of the micromirror steers linearly the optical path of the reflected laser beam. Numerical analysis shows that the actuated micromirror can satisfy the tracking speed imposed by the requirement on the access time for the high-density optical data storage up to few tens Gbit/in/sup 2/. In this paper, preliminary characteristics of the micromachined PZT actuated micromirror (PAM) are reported. The design and the fabrication process of the PZT actuated micromirror are described. Only a 3600 /spl Aring/-thick PZT film deposited by sol-gel process shows both good electrical and mechanical characteristics for the actuators. The micromirror can be easily actuated up to several micrometers under low voltage operation condition.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129579402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838487
V. Kaajakari, S. Rodgers, A. Lal
The first-ever all-surface micromachined ultrasonic micro-rotor is presented. The rotor is actuated by electrically driving a piezoelectric PZT plate mounted at the back of the silicon die eliminating the need for interconnects and space consuming surface actuators. The rotor operates with a single phase sub-five volt peak-to-peak excitation in atmospheric pressure. The piezoelectric plate is adhesively mounted making the method suitable for actuating micromachines from any surface micromachine process. Two different modes of operation are demonstrated: pulsed and resonant. The pulse actuation results in low rotation rate (0.5-3 RPM) while resonant actuation results in a fast rotation (10-100 RPM). The ability to drive a geared down rotor (50:7), much smaller than the driving rotor indicates high torque output capability.
{"title":"Ultrasonically driven surface micromachined motor","authors":"V. Kaajakari, S. Rodgers, A. Lal","doi":"10.1109/MEMSYS.2000.838487","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838487","url":null,"abstract":"The first-ever all-surface micromachined ultrasonic micro-rotor is presented. The rotor is actuated by electrically driving a piezoelectric PZT plate mounted at the back of the silicon die eliminating the need for interconnects and space consuming surface actuators. The rotor operates with a single phase sub-five volt peak-to-peak excitation in atmospheric pressure. The piezoelectric plate is adhesively mounted making the method suitable for actuating micromachines from any surface micromachine process. Two different modes of operation are demonstrated: pulsed and resonant. The pulse actuation results in low rotation rate (0.5-3 RPM) while resonant actuation results in a fast rotation (10-100 RPM). The ability to drive a geared down rotor (50:7), much smaller than the driving rotor indicates high torque output capability.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129811140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838522
J. Yang, T. Ono, M. Esashi
The effect of surface treatment in UHV chamber on Q factor of cantilevers with different thickness (60nm, 170nm and 500nm) and different surface orientation was investigated. When length L>30pm, Q factor is proportional to thickness, surface loss dominates. While L<30pm, support loss surpasses the surface loss. Heating can remove SiOz layer and absorbates, and result in an increase of Q factor. Hydrogen termination leads to a larger relative increase of Q factor in thinner structure than in thicker ones. Heating and H exposure improve Q values of Si(100) oriented cantilevers more than Si(ll0) oriented ones and result in the contrary resonance frequency response for these two surfaces.
{"title":"Dominated energy dissipation in ultrathin single crystal silicon cantilever surface loss","authors":"J. Yang, T. Ono, M. Esashi","doi":"10.1109/MEMSYS.2000.838522","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838522","url":null,"abstract":"The effect of surface treatment in UHV chamber on Q factor of cantilevers with different thickness (60nm, 170nm and 500nm) and different surface orientation was investigated. When length L>30pm, Q factor is proportional to thickness, surface loss dominates. While L<30pm, support loss surpasses the surface loss. Heating can remove SiOz layer and absorbates, and result in an increase of Q factor. Hydrogen termination leads to a larger relative increase of Q factor in thinner structure than in thicker ones. Heating and H exposure improve Q values of Si(100) oriented cantilevers more than Si(ll0) oriented ones and result in the contrary resonance frequency response for these two surfaces.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124813041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838509
S. Kota, J. Hetrick, Zhe Li, S. Rodgers, T. Krygowski
We have recently designed, fabricated, demonstrated a new class of compliant stroke amplification mechanisms that are exceptionally well suited for MEMS applications. Manufactured in Sandia's advanced 5-level surface micromachining technology known as SUMMiT-V, these computer generated structures provide high work and area efficiency in designs that are highly compatible with the fabrication process. The actual devices display outstanding yield, robustness, endurance, and resistance to surface adhesion effects during the final release process. One device has been driven to a 20-/spl mu/m output displacement at resonance for more than 10/sup 10/ cycles with no apparent fatigue. This paper focuses on the unique methodology employed to design and analyze these compliant stroke amplification systems. The same approach, however, can be used to design many other compliant structures for fabrication in a MEMS technology. Compliance in design leads to creation of jointless, no-assembly, monolithic mechanical device.
{"title":"Synthesizing high-performance compliant stroke amplification systems for MEMS","authors":"S. Kota, J. Hetrick, Zhe Li, S. Rodgers, T. Krygowski","doi":"10.1109/MEMSYS.2000.838509","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838509","url":null,"abstract":"We have recently designed, fabricated, demonstrated a new class of compliant stroke amplification mechanisms that are exceptionally well suited for MEMS applications. Manufactured in Sandia's advanced 5-level surface micromachining technology known as SUMMiT-V, these computer generated structures provide high work and area efficiency in designs that are highly compatible with the fabrication process. The actual devices display outstanding yield, robustness, endurance, and resistance to surface adhesion effects during the final release process. One device has been driven to a 20-/spl mu/m output displacement at resonance for more than 10/sup 10/ cycles with no apparent fatigue. This paper focuses on the unique methodology employed to design and analyze these compliant stroke amplification systems. The same approach, however, can be used to design many other compliant structures for fabrication in a MEMS technology. Compliance in design leads to creation of jointless, no-assembly, monolithic mechanical device.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125131980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838483
Hung-lin Chen, Chienliu Chang, Kaihsiang Yen, Huiwen Huang, Jinhung Chio, C. Wu, P. Chang
This investigation proposes a novel planar angular rotator fabricated by the conventional CMOS process. Following the 0.6 /spl mu/m SPTM (single poly triple metal) CMOS process, the device is completed by a simple post-process with maskless etching. The suspension unit rotates around its geometric center with electrostatic actuation. In addition to having a single rotatory component, 2/spl times/2 and 3/spl times/3 arrayed components are designed to have a larger rotatory angle with less actuation distance. The proposed design adopts an intelligent mechanism, including slider-crank and four-bar linkage, to permit simultaneous motion. With driving voltages of around 40 volts, the CMOS planar angular rotator could be driven. Comparing to the most common planar angular, micromotor, the design proposed herein has a shorter response time and longer life without the problems of friction and wear.
{"title":"Fabrication of the planar angular rotator using the CMOS process","authors":"Hung-lin Chen, Chienliu Chang, Kaihsiang Yen, Huiwen Huang, Jinhung Chio, C. Wu, P. Chang","doi":"10.1109/MEMSYS.2000.838483","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838483","url":null,"abstract":"This investigation proposes a novel planar angular rotator fabricated by the conventional CMOS process. Following the 0.6 /spl mu/m SPTM (single poly triple metal) CMOS process, the device is completed by a simple post-process with maskless etching. The suspension unit rotates around its geometric center with electrostatic actuation. In addition to having a single rotatory component, 2/spl times/2 and 3/spl times/3 arrayed components are designed to have a larger rotatory angle with less actuation distance. The proposed design adopts an intelligent mechanism, including slider-crank and four-bar linkage, to permit simultaneous motion. With driving voltages of around 40 volts, the CMOS planar angular rotator could be driven. Comparing to the most common planar angular, micromotor, the design proposed herein has a shorter response time and longer life without the problems of friction and wear.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126860968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-23DOI: 10.1109/MEMSYS.2000.838502
M. Despont, H. Takahashi, S. Ichihara, Y. Shirakawabe, N. Shimizu, A. Inoue, W. Haberle, G. Binnig, P. Vettiger
This paper presents a new scanning probe concept based on an integrated dual-cantilever device, which has been designed to reduce the tip-wear problem. It consists of two cantilevers, one having a robust blunt tip, the other having a sharp tip. By means of integrated bimorph actuators, such a cantilever can be used to switch between coarse and fast imaging with the blunt tip, and high-resolution imaging with the sharp tip. Hence the delicate sharp tip is used only when high resolution is required, which greatly increases the probe's lifetime. A high-sensitivity, constricted piezoresistive strain sensor is used for high-resolution imaging. Imaging with the dual-cantilever probe has been demonstrated successfully.
{"title":"Dual-cantilever AFM probe for combining fast and coarse imaging with high-resolution imaging","authors":"M. Despont, H. Takahashi, S. Ichihara, Y. Shirakawabe, N. Shimizu, A. Inoue, W. Haberle, G. Binnig, P. Vettiger","doi":"10.1109/MEMSYS.2000.838502","DOIUrl":"https://doi.org/10.1109/MEMSYS.2000.838502","url":null,"abstract":"This paper presents a new scanning probe concept based on an integrated dual-cantilever device, which has been designed to reduce the tip-wear problem. It consists of two cantilevers, one having a robust blunt tip, the other having a sharp tip. By means of integrated bimorph actuators, such a cantilever can be used to switch between coarse and fast imaging with the blunt tip, and high-resolution imaging with the sharp tip. Hence the delicate sharp tip is used only when high resolution is required, which greatly increases the probe's lifetime. A high-sensitivity, constricted piezoresistive strain sensor is used for high-resolution imaging. Imaging with the dual-cantilever probe has been demonstrated successfully.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115463930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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