Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212627
D. Pasalic, R. Vahldieck, Andreas Walter Aste
An efficient hybrid method for the rigorous analysis of traveling-wave photodetectors (TWPDs) is presented. The method consists of a combination of the 2D drift-diffusion based semiconductor simulation in conjunction with a full-wave EM analysis of the overall structure. While the 2D simulation determines the conductivity profile of the semiconductor layers under illuminations of different optical power levels, the 3D simulation characterizes the corresponding RF performance of the TWPD. Comparison with available experimental data has shown excellent agreement.
{"title":"Rigorous analysis of traveling wave photodetectors under high-power illumination","authors":"D. Pasalic, R. Vahldieck, Andreas Walter Aste","doi":"10.1109/MWSYM.2003.1212627","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212627","url":null,"abstract":"An efficient hybrid method for the rigorous analysis of traveling-wave photodetectors (TWPDs) is presented. The method consists of a combination of the 2D drift-diffusion based semiconductor simulation in conjunction with a full-wave EM analysis of the overall structure. While the 2D simulation determines the conductivity profile of the semiconductor layers under illuminations of different optical power levels, the 3D simulation characterizes the corresponding RF performance of the TWPD. Comparison with available experimental data has shown excellent agreement.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116686245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210458
T. Gasseling, D. Barataud, S. Mons, J. Nebus, J. Villotte, R. Quéré
This paper presents a new characterization system which enables calibrated "Hot S parameter" measurements of power transistors in a load pull environment. The device under test (DUT) is driven by a large signal at a frequency f/sub 0/ while a small signal at a frequency f is injected as a perturbation signal. A frequency sweep of the perturbation tone is performed (basically from 300MHz up to f/sub 0/ (ie lower sideband)). Upper sideband, from f/sub 0/ up to 2f/sub 0/, can be extended in a same manner. The four "Hot S parameters" measured at f are dependent on the nonlinear regime of the DUT forced by the large signal at f/sub 0/. The aim of this experimental purpose is to investigate nonlinear parametric behaviors like nonlinear stability. A description of the proposed measurement set-up is done. Calibration and measurement procedures are described and significant S band measurement results of HBTs are reported and discussed.
{"title":"A new characterization technique of \"Four hot S parameters\" for the study of nonlinear parametric behaviors of microwave devices","authors":"T. Gasseling, D. Barataud, S. Mons, J. Nebus, J. Villotte, R. Quéré","doi":"10.1109/MWSYM.2003.1210458","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210458","url":null,"abstract":"This paper presents a new characterization system which enables calibrated \"Hot S parameter\" measurements of power transistors in a load pull environment. The device under test (DUT) is driven by a large signal at a frequency f/sub 0/ while a small signal at a frequency f is injected as a perturbation signal. A frequency sweep of the perturbation tone is performed (basically from 300MHz up to f/sub 0/ (ie lower sideband)). Upper sideband, from f/sub 0/ up to 2f/sub 0/, can be extended in a same manner. The four \"Hot S parameters\" measured at f are dependent on the nonlinear regime of the DUT forced by the large signal at f/sub 0/. The aim of this experimental purpose is to investigate nonlinear parametric behaviors like nonlinear stability. A description of the proposed measurement set-up is done. Calibration and measurement procedures are described and significant S band measurement results of HBTs are reported and discussed.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125615813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210439
A. Tessmann, A. Leuther, C. Schwoerer, H. Massler, S. Kudszus, W. Reinert, M. Schlechtweg
A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing 0.07 /spl mu/m depletion type metamorphic HEMTs (MHEMTs). The realized single stage cascode LNA achieved a small-signal gain of more than 12 dB and an average noise figure of 23 dB over the bandwidth from 80 to 100 GHz. With an indium content of 80% in the channel, a 2/spl times/30 /spl mu/m MHEMT device has shown a transit frequency (f/sub t/) of 290 GHz, an extrinsic transconductance of 1450 mS/mm and a maximum stable gain (MSG) of 11 dB at 94 GHz. Using two HEMTs connected in cascode configuration, the MSG could be increased to 22 dB. To stabilize the cascode device and to increase the bandwidth of the amplifier circuit, a resistive feedback was integrated into the HEMT in common-gate configuration. Coplanar topology in combination with cascode transistors resulted in a chip-size of only 1/spl times/1 mm/sup 2/.
{"title":"A coplanar 94 GHz low-noise amplifier MMIC using 0.07 /spl mu/m metamorphic cascode HEMTs","authors":"A. Tessmann, A. Leuther, C. Schwoerer, H. Massler, S. Kudszus, W. Reinert, M. Schlechtweg","doi":"10.1109/MWSYM.2003.1210439","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210439","url":null,"abstract":"A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing 0.07 /spl mu/m depletion type metamorphic HEMTs (MHEMTs). The realized single stage cascode LNA achieved a small-signal gain of more than 12 dB and an average noise figure of 23 dB over the bandwidth from 80 to 100 GHz. With an indium content of 80% in the channel, a 2/spl times/30 /spl mu/m MHEMT device has shown a transit frequency (f/sub t/) of 290 GHz, an extrinsic transconductance of 1450 mS/mm and a maximum stable gain (MSG) of 11 dB at 94 GHz. Using two HEMTs connected in cascode configuration, the MSG could be increased to 22 dB. To stabilize the cascode device and to increase the bandwidth of the amplifier circuit, a resistive feedback was integrated into the HEMT in common-gate configuration. Coplanar topology in combination with cascode transistors resulted in a chip-size of only 1/spl times/1 mm/sup 2/.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122490452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212613
Won-Young Uhm, W. Sul, Hyo-Jong Han, Sungchan Kim, H. Lee, D. An, Sam-Dong Kim, D. Shin, Hyung‐Moo Park, J. Rhee
In this paper, we present a high performance V-band quadruple sub-harmonic mixer monolithic circuit which is designed and fabricated for the millimeter wave down converter applications. While the typical sub-harmonic mixers use a half of fundamental frequency, we adopt a quarter of the fundamental frequency. The proposed circuit is based on sub-harmonic mixer with APDP (anti parallel diode pair). Upon the typical mixer design, additional stubs are placed with the modification of original stub length. And the 0.1 /spl mu/m pseudomorphic high electron mobility transistors (PHEMTs) providing better gain are positioned to each port. Used lumped elements at IF port, it provides selectivity of IF frequency, and increases isolation. Maximum conversion gain of 0.8 dB at a LO frequency of 14.5 GHz and at a RF frequency of 60.4 GHz is measured. Both LO-to-RF and LO-to-IF isolations are higher than 40 dB. These conversion gain results and isolation characteristic are the best performances reported among the quadruple sub-harmonic mixers operating in the V-band millimeter wave frequency thus far.
{"title":"A high performance V-band monolithic quadruple sub-harmonic mixer","authors":"Won-Young Uhm, W. Sul, Hyo-Jong Han, Sungchan Kim, H. Lee, D. An, Sam-Dong Kim, D. Shin, Hyung‐Moo Park, J. Rhee","doi":"10.1109/MWSYM.2003.1212613","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212613","url":null,"abstract":"In this paper, we present a high performance V-band quadruple sub-harmonic mixer monolithic circuit which is designed and fabricated for the millimeter wave down converter applications. While the typical sub-harmonic mixers use a half of fundamental frequency, we adopt a quarter of the fundamental frequency. The proposed circuit is based on sub-harmonic mixer with APDP (anti parallel diode pair). Upon the typical mixer design, additional stubs are placed with the modification of original stub length. And the 0.1 /spl mu/m pseudomorphic high electron mobility transistors (PHEMTs) providing better gain are positioned to each port. Used lumped elements at IF port, it provides selectivity of IF frequency, and increases isolation. Maximum conversion gain of 0.8 dB at a LO frequency of 14.5 GHz and at a RF frequency of 60.4 GHz is measured. Both LO-to-RF and LO-to-IF isolations are higher than 40 dB. These conversion gain results and isolation characteristic are the best performances reported among the quadruple sub-harmonic mixers operating in the V-band millimeter wave frequency thus far.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122540168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212509
Y. Baeyens, Y. Chen
A fully integrated push-push voltage controlled oscillator (VCO) with simultaneous differential fundamental output is realized using an advanced 0.13/spl mu/m SiGe HBT process. A maximum oscillation frequency of 155 GHz, up to -5 dBm output power at 150 GHz and 30 GHz wide tuning range is achieved. The measured phase-noise in the linear tuning range is around -85 dBc/Hz at 1 MHz offset from carrier. Up to +3 dBm output power and 6 dB lower phase noise is obtained at each of the fundamental frequency differential ports. For a similar but fixed frequency oscillator, -2 dBm output power and a low phase noise of less than -90 dBc/Hz is measured at 1 MHz from the 140 GHz carrier.
{"title":"A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output","authors":"Y. Baeyens, Y. Chen","doi":"10.1109/MWSYM.2003.1212509","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212509","url":null,"abstract":"A fully integrated push-push voltage controlled oscillator (VCO) with simultaneous differential fundamental output is realized using an advanced 0.13/spl mu/m SiGe HBT process. A maximum oscillation frequency of 155 GHz, up to -5 dBm output power at 150 GHz and 30 GHz wide tuning range is achieved. The measured phase-noise in the linear tuning range is around -85 dBc/Hz at 1 MHz offset from carrier. Up to +3 dBm output power and 6 dB lower phase noise is obtained at each of the fundamental frequency differential ports. For a similar but fixed frequency oscillator, -2 dBm output power and a low phase noise of less than -90 dBc/Hz is measured at 1 MHz from the 140 GHz carrier.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131245342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210612
T. Gaier, D. Dawson, M. Wells
We have developed a broadband 180/spl deg/ phase switch using one-sided planar grounded slotline design. The design is based upon a grounded coplanar waveguide (CPW) to slotline transition acting as a balun. This design offers several advantages over existing topologies making it well suited to monolithic microwave integrated circuit (MMIC) integration. The uniplanar construction allows for simple module integration and the slot transition with a cutoff frequency serves the same function as a waveguide transition used in multipliers and mixers. We fabricated a switch using flip-chip Schottky diodes and demonstrated the circuit as a W-band phase switch and a mixer. The switch has 5 dB insertion loss and phase flatness of 10/spl deg/ from 90-110 GHz. As a mixer the circuit performs with 12 dB conversion loss from 76-112 GHz, with an IF bandwidth exceeding 25 GHz. This performance is comparable to commercially available waveguide mixers, which are incompatible with MMIC integration.
{"title":"A broadband 100 GHz phase switch/mixer using a uniplanar slotline transition","authors":"T. Gaier, D. Dawson, M. Wells","doi":"10.1109/MWSYM.2003.1210612","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210612","url":null,"abstract":"We have developed a broadband 180/spl deg/ phase switch using one-sided planar grounded slotline design. The design is based upon a grounded coplanar waveguide (CPW) to slotline transition acting as a balun. This design offers several advantages over existing topologies making it well suited to monolithic microwave integrated circuit (MMIC) integration. The uniplanar construction allows for simple module integration and the slot transition with a cutoff frequency serves the same function as a waveguide transition used in multipliers and mixers. We fabricated a switch using flip-chip Schottky diodes and demonstrated the circuit as a W-band phase switch and a mixer. The switch has 5 dB insertion loss and phase flatness of 10/spl deg/ from 90-110 GHz. As a mixer the circuit performs with 12 dB conversion loss from 76-112 GHz, with an IF bandwidth exceeding 25 GHz. This performance is comparable to commercially available waveguide mixers, which are incompatible with MMIC integration.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131615353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212587
J. Morro, H. Esteban, P. Soto, V. Boria, C. Bachiller, S. Cogollos, B. Gimeno
Microwave waveguide filters are key elements present in many communication systems. In recent times, increasing efforts are being devoted to the development of automated Computed Aided Design (CAD) tools of such devices. In this paper a novel CAD tool which improves the efficiency and robustness of the classical Aggressive Space Mapping (ASM) technique is presented. The use of a new segmentation strategy and the hybridization of various optimization algorithms is proposed. The CAD tool has been successfully validated with the design of a real H plane filter for an LMDS application.
{"title":"Automated design of waveguide filters using Aggressive Space Mapping with a segmentation strategy and hybrid optimization techniques","authors":"J. Morro, H. Esteban, P. Soto, V. Boria, C. Bachiller, S. Cogollos, B. Gimeno","doi":"10.1109/MWSYM.2003.1212587","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212587","url":null,"abstract":"Microwave waveguide filters are key elements present in many communication systems. In recent times, increasing efforts are being devoted to the development of automated Computed Aided Design (CAD) tools of such devices. In this paper a novel CAD tool which improves the efficiency and robustness of the classical Aggressive Space Mapping (ASM) technique is presented. The use of a new segmentation strategy and the hybridization of various optimization algorithms is proposed. The CAD tool has been successfully validated with the design of a real H plane filter for an LMDS application.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121638971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210535
F. Faheem, N. Hoivik, Y.C. Lee, K. Gupta
A variable capacitor array with a high Q-factor and a high tuning ratio is demonstrated. A novel "post-enabled" flip-chip assembly allows precise multiple digital capacitance levels within one device. This capacitor array is realized by a hybrid integration of a MEMS device with RF circuits on an alumina substrate. The MEMS is prefabricated using a commercially available foundry process and is initially suspended using mechanical tethers on a silicon substrate, which is removed during the flip-chip assembly. The precise gap between the MEMS and the RF circuit is controlled using posts. Each post is designed by a stack of structural layers available in the commercial foundry process. We measured a Q-factor above 200 at 1 GHz, a capacitance ratio of 4.7:1, and tuning range of 171 MHz in a resonator circuit. More importantly, we achieved a digital capacitance level and negligible warpage due to the excellent gap control following the flip-chip assembly.
{"title":"Post-enabled precision flip-chip assembly for variable MEMS capacitor","authors":"F. Faheem, N. Hoivik, Y.C. Lee, K. Gupta","doi":"10.1109/MWSYM.2003.1210535","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210535","url":null,"abstract":"A variable capacitor array with a high Q-factor and a high tuning ratio is demonstrated. A novel \"post-enabled\" flip-chip assembly allows precise multiple digital capacitance levels within one device. This capacitor array is realized by a hybrid integration of a MEMS device with RF circuits on an alumina substrate. The MEMS is prefabricated using a commercially available foundry process and is initially suspended using mechanical tethers on a silicon substrate, which is removed during the flip-chip assembly. The precise gap between the MEMS and the RF circuit is controlled using posts. Each post is designed by a stack of structural layers available in the commercial foundry process. We measured a Q-factor above 200 at 1 GHz, a capacitance ratio of 4.7:1, and tuning range of 171 MHz in a resonator circuit. More importantly, we achieved a digital capacitance level and negligible warpage due to the excellent gap control following the flip-chip assembly.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121753332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210534
R. Reano, D. Peroulis, J. Whitaker
An aspect-ratio-limited fabrication procedure for the secondary handling of miniaturized micromachined and fiber-fed gallium arsenide electrothermal probes is presented, and a completed probe is used to measure the electric field and temperature above an RF MEMS capacitive switch. The probe dimensions are 125 /spl mu/m /spl times/ 125 /spl mu/m /spl times/ 100 /spl mu/m. Measurements of switches with dimensions of 250 /spl mu/m /spl times/ 640 /spl mu/m are performed for RF powers between 252 mW and 6.7 W in the UP and DOWN states. Non-contact temperature measurements 25 /spl mu/m above the switch in the UP state show a thermal rise time of 0.63 /spl plusmn/ 0.05 seconds for an RF input power of 6.7 W. The accompanying temperature rise is 16.8 /spl plusmn/ 0.7/spl deg/C. In the DOWN state, the increase in temperature is 3.0 /spl plusmn/ 0.8/spl deg/C. Spatial line scans of temperature show the localization of heat energy in the UP state and its delocalization in the DOWN state due to conductive heat transfer into the substrate. Electric field measurements yield traveling waves in the UP state and standing waves in the down state. Standing waves in the DOWN state are consistent with preferential substrate heating on the input side to the switch.
{"title":"Electro/thermal measurements of RF MEMS capacitive switches","authors":"R. Reano, D. Peroulis, J. Whitaker","doi":"10.1109/MWSYM.2003.1210534","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210534","url":null,"abstract":"An aspect-ratio-limited fabrication procedure for the secondary handling of miniaturized micromachined and fiber-fed gallium arsenide electrothermal probes is presented, and a completed probe is used to measure the electric field and temperature above an RF MEMS capacitive switch. The probe dimensions are 125 /spl mu/m /spl times/ 125 /spl mu/m /spl times/ 100 /spl mu/m. Measurements of switches with dimensions of 250 /spl mu/m /spl times/ 640 /spl mu/m are performed for RF powers between 252 mW and 6.7 W in the UP and DOWN states. Non-contact temperature measurements 25 /spl mu/m above the switch in the UP state show a thermal rise time of 0.63 /spl plusmn/ 0.05 seconds for an RF input power of 6.7 W. The accompanying temperature rise is 16.8 /spl plusmn/ 0.7/spl deg/C. In the DOWN state, the increase in temperature is 3.0 /spl plusmn/ 0.8/spl deg/C. Spatial line scans of temperature show the localization of heat energy in the UP state and its delocalization in the DOWN state due to conductive heat transfer into the substrate. Electric field measurements yield traveling waves in the UP state and standing waves in the down state. Standing waves in the DOWN state are consistent with preferential substrate heating on the input side to the switch.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"43 4-7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116506506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210962
P. Bernardi, M. Cavagnaro, R. Cicchetti, S. Pisa, E. Pitizzi, O. Testa
A technique combining uniform asymptotic theory of diffraction and finite-difference time-domain (UTD/FDTD), suitable to characterize human exposure in realistic urban environments at a reasonable computational cost, is presented. The technique allows an accurate evaluation of field interaction with penetrable objects (walls, windows, furniture, etc.) and of power absorption in a high-resolution model of the exposed subject. The method has been applied to analyze the exposure of a subject standing behind a window in a building situated in front of a rooftop-mounted base-station antenna. A comparison of the obtained results with those computed neglecting the presence of the building (free-space condition) evidences that a realistic modeling of field propagation in the actual scenario is essential for an accurate evaluation of absorbed power distribution inside the human body.
{"title":"A UTD/FDTD model to evaluate human exposure to base-station antennas in realistic urban environments","authors":"P. Bernardi, M. Cavagnaro, R. Cicchetti, S. Pisa, E. Pitizzi, O. Testa","doi":"10.1109/MWSYM.2003.1210962","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210962","url":null,"abstract":"A technique combining uniform asymptotic theory of diffraction and finite-difference time-domain (UTD/FDTD), suitable to characterize human exposure in realistic urban environments at a reasonable computational cost, is presented. The technique allows an accurate evaluation of field interaction with penetrable objects (walls, windows, furniture, etc.) and of power absorption in a high-resolution model of the exposed subject. The method has been applied to analyze the exposure of a subject standing behind a window in a building situated in front of a rooftop-mounted base-station antenna. A comparison of the obtained results with those computed neglecting the presence of the building (free-space condition) evidences that a realistic modeling of field propagation in the actual scenario is essential for an accurate evaluation of absorbed power distribution inside the human body.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127585187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：