Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210990
G. Prigent, É. Rius, F. Le Pennec, S. Le Maguer, C. Quendo
This paper discusses a method used to design a planar band-pass filter in the Ku band frequency range for a given satellite application. In order to fit a hardened specification, a filter topology, based on dual behavior resonators (DBRs), is used. In association with this topology, we propose an automated design procedure that combines both circuit and full-wave simulations. It is based on a statistical sensitivity study performed by DOE analysis. After development of the base filter, the out-of-band rejection is improved using topological modifications in order to favor transmission zeros occurrence.
{"title":"A novel design method for improvement of narrow band-pass planar filter response","authors":"G. Prigent, É. Rius, F. Le Pennec, S. Le Maguer, C. Quendo","doi":"10.1109/MWSYM.2003.1210990","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210990","url":null,"abstract":"This paper discusses a method used to design a planar band-pass filter in the Ku band frequency range for a given satellite application. In order to fit a hardened specification, a filter topology, based on dual behavior resonators (DBRs), is used. In association with this topology, we propose an automated design procedure that combines both circuit and full-wave simulations. It is based on a statistical sensitivity study performed by DOE analysis. After development of the base filter, the out-of-band rejection is improved using topological modifications in order to favor transmission zeros occurrence.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128079983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210451
Guoan Wang, S. Barstow, A. Jeyakumar, J. Papapolymerou, C. Henderson
This paper presents the design, fabrication and testing of capacitive RF MEMS switches with a new, low processing cost dielectric layer on high-resistivity silicon substrate. The dielectric can be spun on the wafer and its parameters (dielectric constant and loss) can be controlled during fabrication to achieve the desired values. Both bridge- and cantilever-type switches were fabricated on high-/spl rho/ silicon substrate using a simple low cost four-mask process. Measured results are presented.
{"title":"Low cost RF MEMS switches using photodefinable mixed oxide dielectrics","authors":"Guoan Wang, S. Barstow, A. Jeyakumar, J. Papapolymerou, C. Henderson","doi":"10.1109/MWSYM.2003.1210451","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210451","url":null,"abstract":"This paper presents the design, fabrication and testing of capacitive RF MEMS switches with a new, low processing cost dielectric layer on high-resistivity silicon substrate. The dielectric can be spun on the wafer and its parameters (dielectric constant and loss) can be controlled during fabrication to achieve the desired values. Both bridge- and cantilever-type switches were fabricated on high-/spl rho/ silicon substrate using a simple low cost four-mask process. Measured results are presented.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133190758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210997
J. Mateu, C. Collado, J. O'Callaghan
We discuss an harmonic balance algorithm to analyze High Temperature Superconducting (HTS) circuits subject to wideband signals, such as the ones used in CDMA wireless systems. Undersampling is used to discretize and down-convert the bandpass signal resulting from the weak HTS nonlinearities, and this has to be taken into account when performing time-domain calculations of the nonlinear effects. We present an overview of the algorithm and describe an example to verify the software developed. We also discuss a tentative performance assessment of an HTS preselect filter in a UMTS base station receiver.
{"title":"Harmonic balance algorithm to model nonlinear effects in HTS filters subject to CDMA signals","authors":"J. Mateu, C. Collado, J. O'Callaghan","doi":"10.1109/MWSYM.2003.1210997","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210997","url":null,"abstract":"We discuss an harmonic balance algorithm to analyze High Temperature Superconducting (HTS) circuits subject to wideband signals, such as the ones used in CDMA wireless systems. Undersampling is used to discretize and down-convert the bandpass signal resulting from the weak HTS nonlinearities, and this has to be taken into account when performing time-domain calculations of the nonlinear effects. We present an overview of the algorithm and describe an example to verify the software developed. We also discuss a tentative performance assessment of an HTS preselect filter in a UMTS base station receiver.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133228699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210936
M. Ismail, D. Smith, A. Panariello, Y. Wang, M. Yu
A novel design methodology for multiplexer design is presented. For the first time, finite element EM based simulators and space-mapping optimization are combined to produce an accurate design for manifold coupled output multiplexers with dielectric resonator (DR) loaded filters. Finite element EM based simulators are used as a fine model of each multiplexer channel and a coupling matrix representation is used as a coarse model. Fine details such as tuning screws are included in the fine model. Therefore channel dispersion and spurious modes are taken into account. The DR filter channel design parameters are kept bounded during optimization. Our approach has been used to design large-scale manifold coupled output multiplexers and it has significantly reduced the overall tuning time compared to traditional techniques. The technique is illustrated through design of a 10-channel output multiplexer with 5-pole DR filter based channels.
{"title":"EM based design of large-scale dielectric resonator multiplexers by space mapping","authors":"M. Ismail, D. Smith, A. Panariello, Y. Wang, M. Yu","doi":"10.1109/MWSYM.2003.1210936","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210936","url":null,"abstract":"A novel design methodology for multiplexer design is presented. For the first time, finite element EM based simulators and space-mapping optimization are combined to produce an accurate design for manifold coupled output multiplexers with dielectric resonator (DR) loaded filters. Finite element EM based simulators are used as a fine model of each multiplexer channel and a coupling matrix representation is used as a coarse model. Fine details such as tuning screws are included in the fine model. Therefore channel dispersion and spurious modes are taken into account. The DR filter channel design parameters are kept bounded during optimization. Our approach has been used to design large-scale manifold coupled output multiplexers and it has significantly reduced the overall tuning time compared to traditional techniques. The technique is illustrated through design of a 10-channel output multiplexer with 5-pole DR filter based channels.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133256956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212516
R. Kamoua, H. Eisele
Different types of doping profiles are investigated theoretically and experimentally for their potential of improving the performance of InP Gunn devices at J-band (220-325 GHz) frequencies and above. As initial experimental results, devices with an optimized graded doping profile generated output power levels approximately twice the previous state-of-the-art values at 280-300 GHz. Simulations identified a fiat doping profile with a notch at the cathode as even more promising. For example, an RF output power of 50 mW at 240 GHz is predicted for this profile compared to 42 mW at 240 GHz from an optimized graded doping profile.
{"title":"Theoretical and experimental comparison of optimized doping profiles for high-performance InP Gunn devices at 220-500 GHz","authors":"R. Kamoua, H. Eisele","doi":"10.1109/MWSYM.2003.1212516","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212516","url":null,"abstract":"Different types of doping profiles are investigated theoretically and experimentally for their potential of improving the performance of InP Gunn devices at J-band (220-325 GHz) frequencies and above. As initial experimental results, devices with an optimized graded doping profile generated output power levels approximately twice the previous state-of-the-art values at 280-300 GHz. Simulations identified a fiat doping profile with a notch at the cathode as even more promising. For example, an RF output power of 50 mW at 240 GHz is predicted for this profile compared to 42 mW at 240 GHz from an optimized graded doping profile.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133615835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1211001
van Nieuwstadt, R. D. Roo, D. Boprie, Ron Rizor, Peter Hansen, Anthony W. England, H. Pham, Boon Lim
An L-band total power receiver for use in a synthetic thinned array radiometer (STAR) is described. The total power architecture of a radiometer receiver requires special considerations to control gain fluctuations due to small temperature drifts. The STAR application requires consistent passband and stable phase between receivers. The design presented incorporates direct detection to eliminate distributed local oscillators for phase stability, distributed ceramic interference reject filters for passband consistency and temperature compensating attenuators for gain stability. The receiver is packaged in a unique "winged-hex" shape to enable close packaging with the STAR antennas and to facilitate thermal management. The resulting low cost, compact receiver is made from COTS components.
{"title":"A compact direct detection receiver for L-band STAR radiometry","authors":"van Nieuwstadt, R. D. Roo, D. Boprie, Ron Rizor, Peter Hansen, Anthony W. England, H. Pham, Boon Lim","doi":"10.1109/MWSYM.2003.1211001","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1211001","url":null,"abstract":"An L-band total power receiver for use in a synthetic thinned array radiometer (STAR) is described. The total power architecture of a radiometer receiver requires special considerations to control gain fluctuations due to small temperature drifts. The STAR application requires consistent passband and stable phase between receivers. The design presented incorporates direct detection to eliminate distributed local oscillators for phase stability, distributed ceramic interference reject filters for passband consistency and temperature compensating attenuators for gain stability. The receiver is packaged in a unique \"winged-hex\" shape to enable close packaging with the STAR antennas and to facilitate thermal management. The resulting low cost, compact receiver is made from COTS components.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133619501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210878
S. Eom, Soon-Ick Jeon, J. Chae, J. Yook
In this paper, a broadband 180/spl deg/ bit phase shifter using a new switched network was presented. A new network is composed of coupled lines (section) and 45/spl deg/ open and short stubs, which are shunted at the edge points of the main line, respectively. The design graphs provide the required Z/sub m/, Z/sub s/ values, and I/O match and phase bandwidths. Four different 180/spl deg/ bit phase shifters, operated at 3 GHz, were designed and fabricated using the design graphs, and were experimented. The measured performances of each phase shifter were well in agreement with the corresponding the simulation ones over the operating bands, and showed broadband phase characteristics.
{"title":"Broadband 180/spl deg/ bit phase shifter using a new switched network","authors":"S. Eom, Soon-Ick Jeon, J. Chae, J. Yook","doi":"10.1109/MWSYM.2003.1210878","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210878","url":null,"abstract":"In this paper, a broadband 180/spl deg/ bit phase shifter using a new switched network was presented. A new network is composed of coupled lines (section) and 45/spl deg/ open and short stubs, which are shunted at the edge points of the main line, respectively. The design graphs provide the required Z/sub m/, Z/sub s/ values, and I/O match and phase bandwidths. Four different 180/spl deg/ bit phase shifters, operated at 3 GHz, were designed and fabricated using the design graphs, and were experimented. The measured performances of each phase shifter were well in agreement with the corresponding the simulation ones over the operating bands, and showed broadband phase characteristics.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133985070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210926
R. A. La Rue, T. Ngo, E. Chan, J. D. Levine
A novel GaAs 16/spl times/16 cross-point switch MMIC is presented. The switch MMIC incorporates 256 GaAs microwave thyristor devices as the switching elements. The thyristors are two terminal devices with anodes connected to a common horizontal electrode and cathodes connected to a common vertical electrode. The bistable operation of the thyristors permits x-y addressing at the edge of the chip to turn on and off each thyristor. Applications include low cost, low power, high bandwidth switching of signals for broadband services. A detailed description of the thyristor device, MMIC structure and design, and simulation and experimental results are presented.
{"title":"A novel microwave cross-point switch MMIC employing thyristors for broadband services","authors":"R. A. La Rue, T. Ngo, E. Chan, J. D. Levine","doi":"10.1109/MWSYM.2003.1210926","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210926","url":null,"abstract":"A novel GaAs 16/spl times/16 cross-point switch MMIC is presented. The switch MMIC incorporates 256 GaAs microwave thyristor devices as the switching elements. The thyristors are two terminal devices with anodes connected to a common horizontal electrode and cathodes connected to a common vertical electrode. The bistable operation of the thyristors permits x-y addressing at the edge of the chip to turn on and off each thyristor. Applications include low cost, low power, high bandwidth switching of signals for broadband services. A detailed description of the thyristor device, MMIC structure and design, and simulation and experimental results are presented.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133991571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210967
K. Okubo, M. Tsutsumi
This paper newly proposes a microstrip line on the oppositely magnetized ferrite substrate. Strong nonreciprocal transmission characteristic was confirmed with both theory and experiments. After discussions of the physical meaning of nonreciprocity of the line, a nonreciprocal four port junction and new design of a ring circulator along singular point of the bias field were demonstrated as applications of the strip line proposed.
{"title":"Microstrip line on the oppositely magnetized ferrite substrate and its application to the nonreciprocal devices","authors":"K. Okubo, M. Tsutsumi","doi":"10.1109/MWSYM.2003.1210967","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210967","url":null,"abstract":"This paper newly proposes a microstrip line on the oppositely magnetized ferrite substrate. Strong nonreciprocal transmission characteristic was confirmed with both theory and experiments. After discussions of the physical meaning of nonreciprocity of the line, a nonreciprocal four port junction and new design of a ring circulator along singular point of the bias field were demonstrated as applications of the strip line proposed.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134487198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212620
S. Dellier, F. Blache, M. Campovecchio, D. de la Grandiere, S. Vuye, R. Quéré, J. Burie
For the next generation of high-speed optical communications (4/spl times/40Gbit/s OTDM), the availability of very short pulse sources is crucial. This work deals with optical pulse sources using electro-absorption modulators (EAM). With the aim of matching a 100/spl mu/m-long EAM, a 40GHz MMIC driver was designed and fabricated using a GaAs PHEMT 0.15/spl mu/m process. To handle the actual electro-optical objectives of the Driver+EAM function (short pulse /spl sim/5ps, high extinction ratio /spl sim/30dB) we have developed a specific design method, which includes modeling techniques of EAM and CAD-oriented electro-optical design rules. Preliminary optical measurements of the first assembled optical modules (with & without driver) show that the driver leads to more than 10dB improvement for the electro-optical response of the EAM pulse source in the 39.7-42GHz band.
{"title":"40 GHz MMIC driver of electro-absorption modulator for high-speed optical pulse generation","authors":"S. Dellier, F. Blache, M. Campovecchio, D. de la Grandiere, S. Vuye, R. Quéré, J. Burie","doi":"10.1109/MWSYM.2003.1212620","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212620","url":null,"abstract":"For the next generation of high-speed optical communications (4/spl times/40Gbit/s OTDM), the availability of very short pulse sources is crucial. This work deals with optical pulse sources using electro-absorption modulators (EAM). With the aim of matching a 100/spl mu/m-long EAM, a 40GHz MMIC driver was designed and fabricated using a GaAs PHEMT 0.15/spl mu/m process. To handle the actual electro-optical objectives of the Driver+EAM function (short pulse /spl sim/5ps, high extinction ratio /spl sim/30dB) we have developed a specific design method, which includes modeling techniques of EAM and CAD-oriented electro-optical design rules. Preliminary optical measurements of the first assembled optical modules (with & without driver) show that the driver leads to more than 10dB improvement for the electro-optical response of the EAM pulse source in the 39.7-42GHz band.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130328434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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