Pub Date : 2014-02-01DOI: 10.1109/TECHSYM.2014.6808052
C. P. Kumar, R. Poovaiah, Ajanta Sen, Priya Ganadas
In this paper we discuss our attempt to solve the problem of Indoor Localization for a game intended to enhance learning among children by involving them in `learning' along with `play'. The first part of the paper describes our methodology towards the construction of the Augmented Reality Game for enhancing astronomy learning in children, emphasizing the experiential nature of tangible interactions and the remote dimension which the game can take, due to the available social media tools, by bringing people into a virtual 3D space to interact with each other. To keep the game simple and less complicated, we employ Single Access Point based Indoor Localization technique for tracking players. In the latter part of the paper we discuss the Indoor Localization system being implemented to track real time location of the player in his/her physical environment and the same being mapped on a virtual game arena for facilitating remote play dimension. Technologies used for early prototype: - basic optics for creating a device that gives 3D illusion of celestial objects appearing on 2D screen, a Kinect-sensor environment, and potentiometer for interactions. Technologies for the game being currently developed: augmented and virtual reality elements, indoor position tracking using Kalman filter implemented inertial navigation system, with Wi-Fi RSSI data, onboard sensory data, geo-tagging.
{"title":"Single access point based indoor localization technique for augmented reality gaming for children","authors":"C. P. Kumar, R. Poovaiah, Ajanta Sen, Priya Ganadas","doi":"10.1109/TECHSYM.2014.6808052","DOIUrl":"https://doi.org/10.1109/TECHSYM.2014.6808052","url":null,"abstract":"In this paper we discuss our attempt to solve the problem of Indoor Localization for a game intended to enhance learning among children by involving them in `learning' along with `play'. The first part of the paper describes our methodology towards the construction of the Augmented Reality Game for enhancing astronomy learning in children, emphasizing the experiential nature of tangible interactions and the remote dimension which the game can take, due to the available social media tools, by bringing people into a virtual 3D space to interact with each other. To keep the game simple and less complicated, we employ Single Access Point based Indoor Localization technique for tracking players. In the latter part of the paper we discuss the Indoor Localization system being implemented to track real time location of the player in his/her physical environment and the same being mapped on a virtual game arena for facilitating remote play dimension. Technologies used for early prototype: - basic optics for creating a device that gives 3D illusion of celestial objects appearing on 2D screen, a Kinect-sensor environment, and potentiometer for interactions. Technologies for the game being currently developed: augmented and virtual reality elements, indoor position tracking using Kalman filter implemented inertial navigation system, with Wi-Fi RSSI data, onboard sensory data, geo-tagging.","PeriodicalId":265072,"journal":{"name":"Proceedings of the 2014 IEEE Students' Technology Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129420226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-02-01DOI: 10.1109/TECHSYM.2014.6808054
Yogita Parikh, U. Chaskar, Harshal Khakole
This paper presents “effective approach for iris localization in non-ideal imaging conditions”. We proposed an effective algorithm based on the color clustering method for coarse iris localization of non-circular iris boundaries and contrast enhancement used for pupil extraction. The specular reflection removal is carried out by morphological and gradient based method. Also circle correction and non-circular boundary detection is proposed. Upper and lower eyelids boundaries are detected and eyelashes are also removed based on average intensity analysis. The proposed method has been evaluated on the UBIRIS 2.0, NICE.I and NICE.II iris databases. It detects exact iris boundary and removes all irrelevant parts such as eyelids, eyelashes, reflection and gives more accurate results than other existing methods.
{"title":"Effective approach for iris localization in nonideal imaging conditions","authors":"Yogita Parikh, U. Chaskar, Harshal Khakole","doi":"10.1109/TECHSYM.2014.6808054","DOIUrl":"https://doi.org/10.1109/TECHSYM.2014.6808054","url":null,"abstract":"This paper presents “effective approach for iris localization in non-ideal imaging conditions”. We proposed an effective algorithm based on the color clustering method for coarse iris localization of non-circular iris boundaries and contrast enhancement used for pupil extraction. The specular reflection removal is carried out by morphological and gradient based method. Also circle correction and non-circular boundary detection is proposed. Upper and lower eyelids boundaries are detected and eyelashes are also removed based on average intensity analysis. The proposed method has been evaluated on the UBIRIS 2.0, NICE.I and NICE.II iris databases. It detects exact iris boundary and removes all irrelevant parts such as eyelids, eyelashes, reflection and gives more accurate results than other existing methods.","PeriodicalId":265072,"journal":{"name":"Proceedings of the 2014 IEEE Students' Technology Symposium","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114251925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-02-01DOI: 10.1109/TECHSYM.2014.6808083
A. Bag, P. Mukhopadhyay, Saptarsi Ghosh, Rahul Kumar, S. M. Dinara, S. Kabi, A. Chakraborty, D. Biswas
Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel.
{"title":"Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)","authors":"A. Bag, P. Mukhopadhyay, Saptarsi Ghosh, Rahul Kumar, S. M. Dinara, S. Kabi, A. Chakraborty, D. Biswas","doi":"10.1109/TECHSYM.2014.6808083","DOIUrl":"https://doi.org/10.1109/TECHSYM.2014.6808083","url":null,"abstract":"Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel.","PeriodicalId":265072,"journal":{"name":"Proceedings of the 2014 IEEE Students' Technology Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122591821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-02-01DOI: 10.1109/TECHSYM.2014.6808053
Tamesh Halder, A. Bhattacharya
GNSS signal is contaminated with noise when it reaches the ground receiver because of which the receiver has poor performance. To enhance the performance of receiver, we use a large bandwidth or high complexity platform or a combination of both in the receiver's acquisition unit, where code-offset and Doppler frequencies are measured. In either case, the GNSS signal can be effectively sampled at a rate higher than the Nyquist frequency rate. The signal of interest (SOI) occupies a much smaller bandwidth and by using Compressive Sensing (CS), we derive the sparsity of the signal and minimize sampling points that are needed for acquisition. Prolate spheroid wave function (PSWF) is used as a replacement for Fourier or wavelet bases in CS as it is well localized both in time and frequency domain simultaneously. We use dynamic grouping of sparse data in the CS framework to achieve a higher successful acquisition rate of GNSS signal.
{"title":"Weak GNSS signal acquisition using prolate spheroid wave function based compressive sensing","authors":"Tamesh Halder, A. Bhattacharya","doi":"10.1109/TECHSYM.2014.6808053","DOIUrl":"https://doi.org/10.1109/TECHSYM.2014.6808053","url":null,"abstract":"GNSS signal is contaminated with noise when it reaches the ground receiver because of which the receiver has poor performance. To enhance the performance of receiver, we use a large bandwidth or high complexity platform or a combination of both in the receiver's acquisition unit, where code-offset and Doppler frequencies are measured. In either case, the GNSS signal can be effectively sampled at a rate higher than the Nyquist frequency rate. The signal of interest (SOI) occupies a much smaller bandwidth and by using Compressive Sensing (CS), we derive the sparsity of the signal and minimize sampling points that are needed for acquisition. Prolate spheroid wave function (PSWF) is used as a replacement for Fourier or wavelet bases in CS as it is well localized both in time and frequency domain simultaneously. We use dynamic grouping of sparse data in the CS framework to achieve a higher successful acquisition rate of GNSS signal.","PeriodicalId":265072,"journal":{"name":"Proceedings of the 2014 IEEE Students' Technology Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132486510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-02-01DOI: 10.1109/TECHSYM.2014.6808084
S. Bhattacherjee, A. Biswas
In this paper, we report, for the first time, device parameters related to analog circuit applications of symmetric double gate InAsSb channel n-MOSFETs. Our model is based on the carrier concentration and the Pao-Sah's current formulation considering field dependent electron mobility and interface trapped-charge-density. Accuracy of the model has been verified by comparing analytical results with the reported experimental data. The proposed model has been employed to calculate the drain current of DG MOSFETs for different gate and drain voltages and also to compute various analog performance metrics such as transconductance, output conductance, transconductance efficiency, voltage gain and cut-off frequency for a wide range of bias conditions and interface trap charge densities. Our results reveal that InAsSb devices outperform their equally sized Si counterpart for analog circuit applications.
{"title":"Analog circuit performance of high mobility ultrathin-body InAsSb-on-insulator MOSFETs","authors":"S. Bhattacherjee, A. Biswas","doi":"10.1109/TECHSYM.2014.6808084","DOIUrl":"https://doi.org/10.1109/TECHSYM.2014.6808084","url":null,"abstract":"In this paper, we report, for the first time, device parameters related to analog circuit applications of symmetric double gate InAsSb channel n-MOSFETs. Our model is based on the carrier concentration and the Pao-Sah's current formulation considering field dependent electron mobility and interface trapped-charge-density. Accuracy of the model has been verified by comparing analytical results with the reported experimental data. The proposed model has been employed to calculate the drain current of DG MOSFETs for different gate and drain voltages and also to compute various analog performance metrics such as transconductance, output conductance, transconductance efficiency, voltage gain and cut-off frequency for a wide range of bias conditions and interface trap charge densities. Our results reveal that InAsSb devices outperform their equally sized Si counterpart for analog circuit applications.","PeriodicalId":265072,"journal":{"name":"Proceedings of the 2014 IEEE Students' Technology Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133252900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/TECHSYM.2014.6807925
D. Mantri, P. Pawar, N. Prasad, R. Prasad
In Wireless Sensor Networks (WSNs) a sensor node periodically produces data which is processed and then transmitted to the base station (BS) for analysis. A key challenge in the WSNs is to schedule the activity of the node in the cluster based environment for improvement in throughput, energy consumption and delay. In this regards, the paper proposes Cluster-based Myopic and Non-myopic Scheduling algorithm (CMNS) which considers the conflict free schedule based on the current and next state. It considers TDMA as the MAC layer protocol and schedules the aggregated packets with consecutive slots. Simulation studies show that, CMNS reduces the number of conflicts, energy consumption and increases the throughput as compared with state-of-the-art solutions.
{"title":"Cluster-based Myopic and Non-myopic scheduling for Wireless Sensor Network","authors":"D. Mantri, P. Pawar, N. Prasad, R. Prasad","doi":"10.1109/TECHSYM.2014.6807925","DOIUrl":"https://doi.org/10.1109/TECHSYM.2014.6807925","url":null,"abstract":"In Wireless Sensor Networks (WSNs) a sensor node periodically produces data which is processed and then transmitted to the base station (BS) for analysis. A key challenge in the WSNs is to schedule the activity of the node in the cluster based environment for improvement in throughput, energy consumption and delay. In this regards, the paper proposes Cluster-based Myopic and Non-myopic Scheduling algorithm (CMNS) which considers the conflict free schedule based on the current and next state. It considers TDMA as the MAC layer protocol and schedules the aggregated packets with consecutive slots. Simulation studies show that, CMNS reduces the number of conflicts, energy consumption and increases the throughput as compared with state-of-the-art solutions.","PeriodicalId":265072,"journal":{"name":"Proceedings of the 2014 IEEE Students' Technology Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125166678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/TechSym.2014.6808079
Ankit Dixit, Sangeeta Singh, P. Kondekar, Pankaj Kumar
Impact Ionization MOSFET (IMOS), has emerged to combat one of the most critical and fundamental problem of sub-threshold slope (SS) which cannot be lower than 60mV/decade at room temperature for conventional MOSFET, as conventional MOSFET works on the principle of diffusion of charge carrier for the current flow in the device. Whereas, the IMOS devices work on the principle of avalanche breakdown to switch from the `OFF' state to `ON' state. In this paper, we have optimized the device performance of the Lateral impact ionization MOSFET (LIMOS) by varying the device dimensional parameters, such as gate length Lg, intrinsic length Lin, gate dielectric thickness tox and biasing voltages Vg and Vs. Simulation results claims that the ratio of Lg/Lin has to be properly tuned for the optimum device performance. If this ratio approaches to one LIMOS performance are optimized, whereas if it is very higher than one it behaves as Tunnel Field Effect Transistor (TFET) and if it is very less than one it effectively behaves as gated PIN diode. Simulation results show the sub-threshold slope SS to be 1.373mV/dec for our optimized LIMOS. Considerable improvement in other device performance parameters namely Ion, Ioff, Ion/Ioff ratio, threshold voltage V th, breakdown voltage Vbr, drain induced current enhancement DICE, and gate induced barrier lowering GIBL has been reported.
{"title":"Parameters optimization of Lateral impact ionization MOS (LIMOS)","authors":"Ankit Dixit, Sangeeta Singh, P. Kondekar, Pankaj Kumar","doi":"10.1109/TechSym.2014.6808079","DOIUrl":"https://doi.org/10.1109/TechSym.2014.6808079","url":null,"abstract":"Impact Ionization MOSFET (IMOS), has emerged to combat one of the most critical and fundamental problem of sub-threshold slope (SS) which cannot be lower than 60mV/decade at room temperature for conventional MOSFET, as conventional MOSFET works on the principle of diffusion of charge carrier for the current flow in the device. Whereas, the IMOS devices work on the principle of avalanche breakdown to switch from the `OFF' state to `ON' state. In this paper, we have optimized the device performance of the Lateral impact ionization MOSFET (LIMOS) by varying the device dimensional parameters, such as gate length Lg, intrinsic length Lin, gate dielectric thickness tox and biasing voltages Vg and Vs. Simulation results claims that the ratio of Lg/Lin has to be properly tuned for the optimum device performance. If this ratio approaches to one LIMOS performance are optimized, whereas if it is very higher than one it behaves as Tunnel Field Effect Transistor (TFET) and if it is very less than one it effectively behaves as gated PIN diode. Simulation results show the sub-threshold slope SS to be 1.373mV/dec for our optimized LIMOS. Considerable improvement in other device performance parameters namely Ion, Ioff, Ion/Ioff ratio, threshold voltage V th, breakdown voltage Vbr, drain induced current enhancement DICE, and gate induced barrier lowering GIBL has been reported.","PeriodicalId":265072,"journal":{"name":"Proceedings of the 2014 IEEE Students' Technology Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123466295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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