Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557299
S. Cristoloveanu, F. Balestra
Silicon On Insulator (SOI), considered for a long time as the technology of the 'future', is presently being regarded as the most attractive candidate for low-voltage ULSI circuits. A major condition for competing with bulk silicon is the degree of understanding of material properties, fabrication techniques, and device operation. This paper reviews the main advantages of SOI devices and the various technological approaches. Material characterization techniques and related properties are also addressed. Subsequent sections describe the special mechanisms involved in the operation of thin SOI MOSFETs and the most efficient device-based characterization methods. Finally, it is shown that a key challenge for SOI technology is the control of the device degradation induced by hot-carrier injection.
{"title":"SOI technologies, materials and devices","authors":"S. Cristoloveanu, F. Balestra","doi":"10.1109/SMICND.1996.557299","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557299","url":null,"abstract":"Silicon On Insulator (SOI), considered for a long time as the technology of the 'future', is presently being regarded as the most attractive candidate for low-voltage ULSI circuits. A major condition for competing with bulk silicon is the degree of understanding of material properties, fabrication techniques, and device operation. This paper reviews the main advantages of SOI devices and the various technological approaches. Material characterization techniques and related properties are also addressed. Subsequent sections describe the special mechanisms involved in the operation of thin SOI MOSFETs and the most efficient device-based characterization methods. Finally, it is shown that a key challenge for SOI technology is the control of the device degradation induced by hot-carrier injection.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129045418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557387
A. Andreev, G. Zegrya
Effect of strain on thresholdless Auger recombination processes in quantum wells has been studied theoretically. A detailed analysis of overlap integrals between the initial and final states of the particles has been carried out. It is shown that the strain both qualitatively and quantitatively affects the overlap integral between the electron and hole states. It is demonstrated that the Auger recombination rate decreases as compressive strain increases.
{"title":"Effect of strain on thresholdless Auger recombination in quantum wells","authors":"A. Andreev, G. Zegrya","doi":"10.1109/SMICND.1996.557387","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557387","url":null,"abstract":"Effect of strain on thresholdless Auger recombination processes in quantum wells has been studied theoretically. A detailed analysis of overlap integrals between the initial and final states of the particles has been carried out. It is shown that the strain both qualitatively and quantitatively affects the overlap integral between the electron and hole states. It is demonstrated that the Auger recombination rate decreases as compressive strain increases.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129588950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557322
A. Ivashchenko, I. Kerner, I. Maronchuk
In order to simulate numerically the electrical properties of polycrystalline SnO/sub 2/ thin films a polycrystalline film material is substituted by a "plane" or "volume" resistor network. The reliability of the developed calculation procedure is based on the coincidence of our evaluations of the electroconductivity parameters such as critical concentration C* and electrical conductivity index t in the pure "plane" and "volume" situations with numerical results predicted by the percolation theory. A good agreement between calculated and experimental data is obtained, it is shown that the variation of relation between average grain size and film thickness may serve as an effective mean to control the electrical properties of semiconducting polycrystalline films including SnO/sub 2/ polycrystalline films.
{"title":"Percolation theory approach to the description of electrical conductivity near 3D-2D transition in thin polycrystalline SnO/sub 2/ films","authors":"A. Ivashchenko, I. Kerner, I. Maronchuk","doi":"10.1109/SMICND.1996.557322","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557322","url":null,"abstract":"In order to simulate numerically the electrical properties of polycrystalline SnO/sub 2/ thin films a polycrystalline film material is substituted by a \"plane\" or \"volume\" resistor network. The reliability of the developed calculation procedure is based on the coincidence of our evaluations of the electroconductivity parameters such as critical concentration C* and electrical conductivity index t in the pure \"plane\" and \"volume\" situations with numerical results predicted by the percolation theory. A good agreement between calculated and experimental data is obtained, it is shown that the variation of relation between average grain size and film thickness may serve as an effective mean to control the electrical properties of semiconducting polycrystalline films including SnO/sub 2/ polycrystalline films.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126671240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557415
M. Dragan, M. Bazu
A method to detect the character of a periodic test, destructive or nondestructive, was developed. This method allows the delivery of those semiconductor devices which undergo nondestructive periodic tests. Beneficial effects for the device manufacturers are obvious.
{"title":"Can you deliver the semiconductor devices after performing periodic tests?","authors":"M. Dragan, M. Bazu","doi":"10.1109/SMICND.1996.557415","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557415","url":null,"abstract":"A method to detect the character of a periodic test, destructive or nondestructive, was developed. This method allows the delivery of those semiconductor devices which undergo nondestructive periodic tests. Beneficial effects for the device manufacturers are obvious.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"69 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133237882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557426
J. Piqueras, B. Méndez, G. Panin, P. Dutta, E. Dieguez
Cathodoluminescence in the scanning electron microscope is used to investigate growth and process induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different annealing and irradiation treatments.
{"title":"Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide","authors":"J. Piqueras, B. Méndez, G. Panin, P. Dutta, E. Dieguez","doi":"10.1109/SMICND.1996.557426","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557426","url":null,"abstract":"Cathodoluminescence in the scanning electron microscope is used to investigate growth and process induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different annealing and irradiation treatments.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"244 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132904691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557375
Y. Ni, F. Devos, B. Arion
This tutorial paper presents a marriage between analog computation paradigm and modem VLSI integration technology in artificial vision machine design. Some typical analog computation circuits for vision applications are presented in order to give a comprehensive view of the possibility of cellular analog computation. A retina is only a knowledge based smart image sensor, except some very specific applications, it should be interfaced with digital processor for higher level processing and interpretation. A good partition between these two parts can conduct to very efficient image processing architecture. This has been demonstrated by an analog retina based stereovision system.
{"title":"Analog retina based real-time vision system","authors":"Y. Ni, F. Devos, B. Arion","doi":"10.1109/SMICND.1996.557375","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557375","url":null,"abstract":"This tutorial paper presents a marriage between analog computation paradigm and modem VLSI integration technology in artificial vision machine design. Some typical analog computation circuits for vision applications are presented in order to give a comprehensive view of the possibility of cellular analog computation. A retina is only a knowledge based smart image sensor, except some very specific applications, it should be interfaced with digital processor for higher level processing and interpretation. A good partition between these two parts can conduct to very efficient image processing architecture. This has been demonstrated by an analog retina based stereovision system.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116023198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557455
D. Tsiulyanu, G. Golban, E. Kolomeyko, N. Gumeniuc, O. Melnic, S. Marian
Photoelectrical properties of artificial dimorphite allow the fabrication of device structures sensitive to ultraviolet radiation. Photoconductivity spectra of these sensitive structures depend on technology of the film preparation. The result for fabricated of UV sensors are presented including experimental results for UV dosimeter.
{"title":"Dimorphite based UV detectors","authors":"D. Tsiulyanu, G. Golban, E. Kolomeyko, N. Gumeniuc, O. Melnic, S. Marian","doi":"10.1109/SMICND.1996.557455","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557455","url":null,"abstract":"Photoelectrical properties of artificial dimorphite allow the fabrication of device structures sensitive to ultraviolet radiation. Photoconductivity spectra of these sensitive structures depend on technology of the film preparation. The result for fabricated of UV sensors are presented including experimental results for UV dosimeter.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116403714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557331
F. Ionescu
The paper describes a domain decomposition technique for image rendering operations in a parallel MIMD network. Different schemes of partitioning and mapping onto multicomputer nodes are analysed for exploitation of available concurrency of the program and for obtaining maximum parallel speedup.
{"title":"Mapping image rendering operations onto parallel processors","authors":"F. Ionescu","doi":"10.1109/SMICND.1996.557331","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557331","url":null,"abstract":"The paper describes a domain decomposition technique for image rendering operations in a parallel MIMD network. Different schemes of partitioning and mapping onto multicomputer nodes are analysed for exploitation of available concurrency of the program and for obtaining maximum parallel speedup.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130245689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557435
A. Popescu, A. Ionescu, A. Rusu, A. Chovet, D. Steriu, B. Tudor
This paper gives a critical review of some of the most widely used series resistance extraction methods based essentially on static curves revealed by state-of-the-art bipolar transistors: polysilicon-emitter bipolar junction transistors (BJTs) with "normal" (Al) and TiSi/sub 2/ contacts. An unusual current-dependence of series resistances in polysilicon emitter transistors is also reported.
{"title":"A critical review of series resistances extraction methods in advanced bipolar transistors","authors":"A. Popescu, A. Ionescu, A. Rusu, A. Chovet, D. Steriu, B. Tudor","doi":"10.1109/SMICND.1996.557435","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557435","url":null,"abstract":"This paper gives a critical review of some of the most widely used series resistance extraction methods based essentially on static curves revealed by state-of-the-art bipolar transistors: polysilicon-emitter bipolar junction transistors (BJTs) with \"normal\" (Al) and TiSi/sub 2/ contacts. An unusual current-dependence of series resistances in polysilicon emitter transistors is also reported.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128260178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557469
C. Cobianu, C. Savaniu, O. Buiu, D. Dascalu, M. Zaharescu, C. Parlog, A. V. D. Berg, B. Pécz
SnO/sub 2/ and SnO/sub 2/:Sb sol-gel derived thin films have been prepared from tin (II) ethylhexanoate and tin (IV) ethoxide precursors (the later not reported before) in order to be used for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on different types of substrates (Si, SiO/sub 2//Si). By energy dispersive X-ray spectroscopy (EDXS) performed on the cross section of the porosified silicon (PS) coupled with XTEM analysis, the penetration of the SnO/sub 2/ sol-phase in the nanometric pores followed by the SnO/sub 2/ consolidation film in the pores of the PS, during subsequent annealing at 500/spl deg/C has been experimentally proved.
{"title":"Tin dioxide sol-gel derived thin films deposited on porous silicon","authors":"C. Cobianu, C. Savaniu, O. Buiu, D. Dascalu, M. Zaharescu, C. Parlog, A. V. D. Berg, B. Pécz","doi":"10.1109/SMICND.1996.557469","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557469","url":null,"abstract":"SnO/sub 2/ and SnO/sub 2/:Sb sol-gel derived thin films have been prepared from tin (II) ethylhexanoate and tin (IV) ethoxide precursors (the later not reported before) in order to be used for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on different types of substrates (Si, SiO/sub 2//Si). By energy dispersive X-ray spectroscopy (EDXS) performed on the cross section of the porosified silicon (PS) coupled with XTEM analysis, the penetration of the SnO/sub 2/ sol-phase in the nanometric pores followed by the SnO/sub 2/ consolidation film in the pores of the PS, during subsequent annealing at 500/spl deg/C has been experimentally proved.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128532275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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