Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557413
C.W. Wang, T. Sheu, Y. Su, M. Yokoyama
Energy-resolved DLTS was utilized to measure the interface electron energy distribution at the insulator-semiconductor interface. The results showed that Ta/sub 2/O/sub 5//ZnS:TbOF has shallower interface state energy distribution and higher averaged interface state density than SiO/sub 2//ZnS:TbOF.
{"title":"An investigation of deep electron trap at the different insulator-phosphor interfaces in ZnS:TbOF ACTFEL devices","authors":"C.W. Wang, T. Sheu, Y. Su, M. Yokoyama","doi":"10.1109/SMICND.1996.557413","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557413","url":null,"abstract":"Energy-resolved DLTS was utilized to measure the interface electron energy distribution at the insulator-semiconductor interface. The results showed that Ta/sub 2/O/sub 5//ZnS:TbOF has shallower interface state energy distribution and higher averaged interface state density than SiO/sub 2//ZnS:TbOF.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129750042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557368
N. Nolhier, G. Charitat, D. Zerrouk, P. Rossel
We report in this paper a numerical study on an electrical isolation scheme for High Voltage Integrated Circuits (HVICs). The presented architecture is based on mixed-isolation technique including a vertical dielectric isolation along with an horizontal junction isolation. The aim of this work is the integration on the same substrate of power devices with low voltage control circuits. This isolation technique must be efficient in both static and dynamic mode, in order to compete with a costly full dielectric isolation.
{"title":"Self-shielded high voltage SOI structures for HVICs","authors":"N. Nolhier, G. Charitat, D. Zerrouk, P. Rossel","doi":"10.1109/SMICND.1996.557368","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557368","url":null,"abstract":"We report in this paper a numerical study on an electrical isolation scheme for High Voltage Integrated Circuits (HVICs). The presented architecture is based on mixed-isolation technique including a vertical dielectric isolation along with an horizontal junction isolation. The aim of this work is the integration on the same substrate of power devices with low voltage control circuits. This isolation technique must be efficient in both static and dynamic mode, in order to compete with a costly full dielectric isolation.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127102657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557305
R. Plugari, E. Vasile, C. Cobiami, D. Dascalu
The initiation and evolution of silicon hillocks induced by phosphorus implantation processes on the surface of amorphous LPCVD silicon films, for doses in the range 2/spl times/10/sup 14/ cm/sup -2/-8/spl times/10/sup 15/ cm/sup -2/ and 50 keV beam energy, were investigated by scanning electron microscopy. The hillock density increases as the implantation dose is raised up to 5/spl times/10/sup 15/ cm/sup -2/. Further increase of the dose to 8/spl times/10/sup 15/ cm/sup -2/ determines a steep decrease of the hillock density. The effects of both the concentration gradient of the as-implanted phosphorus atoms and the change of microstructure were considered in order to explain the hillock formation and evolution.
{"title":"Structural evolution of amorphous silicon films during P-implantation","authors":"R. Plugari, E. Vasile, C. Cobiami, D. Dascalu","doi":"10.1109/SMICND.1996.557305","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557305","url":null,"abstract":"The initiation and evolution of silicon hillocks induced by phosphorus implantation processes on the surface of amorphous LPCVD silicon films, for doses in the range 2/spl times/10/sup 14/ cm/sup -2/-8/spl times/10/sup 15/ cm/sup -2/ and 50 keV beam energy, were investigated by scanning electron microscopy. The hillock density increases as the implantation dose is raised up to 5/spl times/10/sup 15/ cm/sup -2/. Further increase of the dose to 8/spl times/10/sup 15/ cm/sup -2/ determines a steep decrease of the hillock density. The effects of both the concentration gradient of the as-implanted phosphorus atoms and the change of microstructure were considered in order to explain the hillock formation and evolution.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127254244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557403
E. Morvan, J. Montserrat, P. Godignon, J. Fernandez, D. Flores, M. Locatelli, J. Millán, G. Brezeanu
In this paper a simulation study of Al implantation into 6H-SiC single crystal is presented. Beam orientation with respect to crystal axis has been investigated. This aspect is of crucial importance to achieve good implantation process control. A first step analysis is given and values for optimum ion beam angles are proposed.
{"title":"Implantation beam angle study for Al implanted in 6H-SiC","authors":"E. Morvan, J. Montserrat, P. Godignon, J. Fernandez, D. Flores, M. Locatelli, J. Millán, G. Brezeanu","doi":"10.1109/SMICND.1996.557403","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557403","url":null,"abstract":"In this paper a simulation study of Al implantation into 6H-SiC single crystal is presented. Beam orientation with respect to crystal axis has been investigated. This aspect is of crucial importance to achieve good implantation process control. A first step analysis is given and values for optimum ion beam angles are proposed.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130122735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557333
T. Tebeanu, D. Neculoiu
This paper investigates microwave power generation using DBRT diodes. An oscillator circuit is analyzed. Expressions for large-signal conductance, output power and maximum power are derived. The power generation of an unbiased pumped diode is analyzed. Based on a simple model, it is demonstrated that in certain conditions the DBRT diode generates power on the 3/sup rd/ harmonic of pump generator.
{"title":"Microwave power generation using double barrier resonant tunnel diodes","authors":"T. Tebeanu, D. Neculoiu","doi":"10.1109/SMICND.1996.557333","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557333","url":null,"abstract":"This paper investigates microwave power generation using DBRT diodes. An oscillator circuit is analyzed. Expressions for large-signal conductance, output power and maximum power are derived. The power generation of an unbiased pumped diode is analyzed. Based on a simple model, it is demonstrated that in certain conditions the DBRT diode generates power on the 3/sup rd/ harmonic of pump generator.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132409565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557422
A. Iliadis, J. Zahurak, S. Tabatabaei
Two application-specific devices, a novel doped-channel Quasi-MODFET on AlInAs/InGaAs/InP, and an AlGaAs/GaAs graded-base heterojunction bipolar transistor, suitable for high current/gain applications in energy efficient mobile communication and optical communication and computer networks, have been developed. The study of transport and performance of the doped-channel MODFETs included the quantum well, channel width, doping profile, and composition, and revealed that the position of the electron wavefunction peak can be engineered to shift in areas of minimum scattering, which resulted in the development of the 0.5 /spl mu/m Q-MODFET with a g/sub m/=703 mS/mm and I/sub dent/=800 to 940 mA/mm at V/sub g/=0 to 0.4 V, the highest g/sub m/ recorded for a doped-channel device. In the HBT, the development of a rigorous two-dimensional model providing the optimum compositional grading of the base, the improvement of the collector using thinner layers and higher doping, and the emitter using compositional grading, resulted in the development of a high current heterojunction bipolar transistor appropriate for laser drivers.
{"title":"Application specific devices: transport and performance of the Quasi-MODFET and the graded base heterojunction bipolar transistor","authors":"A. Iliadis, J. Zahurak, S. Tabatabaei","doi":"10.1109/SMICND.1996.557422","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557422","url":null,"abstract":"Two application-specific devices, a novel doped-channel Quasi-MODFET on AlInAs/InGaAs/InP, and an AlGaAs/GaAs graded-base heterojunction bipolar transistor, suitable for high current/gain applications in energy efficient mobile communication and optical communication and computer networks, have been developed. The study of transport and performance of the doped-channel MODFETs included the quantum well, channel width, doping profile, and composition, and revealed that the position of the electron wavefunction peak can be engineered to shift in areas of minimum scattering, which resulted in the development of the 0.5 /spl mu/m Q-MODFET with a g/sub m/=703 mS/mm and I/sub dent/=800 to 940 mA/mm at V/sub g/=0 to 0.4 V, the highest g/sub m/ recorded for a doped-channel device. In the HBT, the development of a rigorous two-dimensional model providing the optimum compositional grading of the base, the improvement of the collector using thinner layers and higher doping, and the emitter using compositional grading, resulted in the development of a high current heterojunction bipolar transistor appropriate for laser drivers.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132081893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557436
L. Anghel, T. Ouisse, T. Billon, P. Lassagne, C. Jaussaud
The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type silicon carbide devices with Ti gate. The noise results have been related to general properties of these devices such as barrier height and doping level, extracted from varying temperature measurements. The 1/f low frequency noise closely follows a model proposed by Kleinpenning (1979) and is thus most probably due to mobility fluctuations in the depletion region of the Schottky barrier.
{"title":"Experimental investigation of noise sources in silicon carbide Schottky barriers","authors":"L. Anghel, T. Ouisse, T. Billon, P. Lassagne, C. Jaussaud","doi":"10.1109/SMICND.1996.557436","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557436","url":null,"abstract":"The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type silicon carbide devices with Ti gate. The noise results have been related to general properties of these devices such as barrier height and doping level, extracted from varying temperature measurements. The 1/f low frequency noise closely follows a model proposed by Kleinpenning (1979) and is thus most probably due to mobility fluctuations in the depletion region of the Schottky barrier.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126528186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557340
L. Bartha, F. Koltai, S. Puspoki, V. Rakovics, M. Serényi
Low cost and reliable pump lasers were developed for blue upconversion fiber lasers and film waveguides. The recent fabrication of Tm-doped fluorocirconate (Tm:ZBLAN) glass fiber has spurred the development of blue and red fiber lasers pumped by upconversion. The performance of CW room temperature devices demonstrated to date is reviewed with emphasis on the pump sources. Spatially coherent high-power InGaAsP/InP lasers emitting at 1140 nm and 1220 nm have been fabricated by single-step growth on non-planar InP substrate. A CW power of 150 mW was measured from 750 /spl mu/m long 2 /spl mu/m wide cavity buried stripe lasers. Stable fundamental transverse mode operation was obtained up to 120 mW emitted power. Narrow and circular beam enables efficient (60-70%) coupling of the emitted power into single mode fiber.
{"title":"InGaAsP/InP pump lasers for Tm-doped upconversion fiber lasers and film waveguides","authors":"L. Bartha, F. Koltai, S. Puspoki, V. Rakovics, M. Serényi","doi":"10.1109/SMICND.1996.557340","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557340","url":null,"abstract":"Low cost and reliable pump lasers were developed for blue upconversion fiber lasers and film waveguides. The recent fabrication of Tm-doped fluorocirconate (Tm:ZBLAN) glass fiber has spurred the development of blue and red fiber lasers pumped by upconversion. The performance of CW room temperature devices demonstrated to date is reviewed with emphasis on the pump sources. Spatially coherent high-power InGaAsP/InP lasers emitting at 1140 nm and 1220 nm have been fabricated by single-step growth on non-planar InP substrate. A CW power of 150 mW was measured from 750 /spl mu/m long 2 /spl mu/m wide cavity buried stripe lasers. Stable fundamental transverse mode operation was obtained up to 120 mW emitted power. Narrow and circular beam enables efficient (60-70%) coupling of the emitted power into single mode fiber.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125708469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557309
B. Djezzar
Low-power and very-high-performance 0.25-/spl mu/m vertical PNP bipolar process is designed and characterized by using the mixed two-dimensional numerical device/circuit simulator (CODECS). This PNP transistor has a 25-nm-wide emitter, a 38-nm-wide base region, a current gain of 17 (without poly-Si emitter effect), and maximum cut-off frequency of 24-GHz. The conventional ECL circuits, designed by this PNP transistor, exhibit an unloaded gate delay of 22-ps at 1.75-mW, and a delay time less than 16-ps/stage for unloaded ECL ring-oscillator.
{"title":"Design and optimization of a low-power and very-high-performance 0.25-/spl mu/m advanced PNP bipolar process","authors":"B. Djezzar","doi":"10.1109/SMICND.1996.557309","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557309","url":null,"abstract":"Low-power and very-high-performance 0.25-/spl mu/m vertical PNP bipolar process is designed and characterized by using the mixed two-dimensional numerical device/circuit simulator (CODECS). This PNP transistor has a 25-nm-wide emitter, a 38-nm-wide base region, a current gain of 17 (without poly-Si emitter effect), and maximum cut-off frequency of 24-GHz. The conventional ECL circuits, designed by this PNP transistor, exhibit an unloaded gate delay of 22-ps at 1.75-mW, and a delay time less than 16-ps/stage for unloaded ECL ring-oscillator.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122905209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557429
D. Flores, X. Jordà, M. Vellvehí, J. Fernandez, S. Hidalgo, J. Rebollo, J. Millán
This paper analyzes the static and dynamic electrical characteristics of BRT devices fabricated on homogeneous wafers, including a shorted anode structure. The use of homogeneous substrates allows the implementation of a direct path between the N-drift region and the anode electrode. This allows a reduction of the transient losses and the turnoff time. The operation mode, the electrical characteristics and the switching behaviour of BRT devices with shorted have been analysed by means of 2D numerical simulations. The reduction of the transient losses has been corroborated experimentally by performing switching tests under resistive load.
{"title":"The shorted anode BRT: a MOS-thyristor structure with improved turn-off performance","authors":"D. Flores, X. Jordà, M. Vellvehí, J. Fernandez, S. Hidalgo, J. Rebollo, J. Millán","doi":"10.1109/SMICND.1996.557429","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557429","url":null,"abstract":"This paper analyzes the static and dynamic electrical characteristics of BRT devices fabricated on homogeneous wafers, including a shorted anode structure. The use of homogeneous substrates allows the implementation of a direct path between the N-drift region and the anode electrode. This allows a reduction of the transient losses and the turnoff time. The operation mode, the electrical characteristics and the switching behaviour of BRT devices with shorted have been analysed by means of 2D numerical simulations. The reduction of the transient losses has been corroborated experimentally by performing switching tests under resistive load.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131553727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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