Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557303
H. Richter, A. Fischer, G. Kissinger, D. Kruger
With the integration of heterostructures into the established silicon technology (a promising approach is the SiGe system) frequencies become attainable which used to be the exclusive domain of compound semiconductors. Heterostructures also make a reduction of the vertical device dimension possible. Therefore, they are well suited for advanced CMOS variants with lateral structures below 0.2 /spl mu/m for fast integrated circuits. To understand the influence of new deposition methods, process-induced defects, metal contamination, and mechanical stress are a major task for present-day defect engineering. SiGe heterostructures with ultra thin layers and ultra sharp junctions promise a novel generation of silicon devices. The growth of strained SiGe enables us to apply bandgap engineering to silicon-based devices (HBT, MODFET).
{"title":"Defect engineering in SiGe heterostructures","authors":"H. Richter, A. Fischer, G. Kissinger, D. Kruger","doi":"10.1109/SMICND.1996.557303","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557303","url":null,"abstract":"With the integration of heterostructures into the established silicon technology (a promising approach is the SiGe system) frequencies become attainable which used to be the exclusive domain of compound semiconductors. Heterostructures also make a reduction of the vertical device dimension possible. Therefore, they are well suited for advanced CMOS variants with lateral structures below 0.2 /spl mu/m for fast integrated circuits. To understand the influence of new deposition methods, process-induced defects, metal contamination, and mechanical stress are a major task for present-day defect engineering. SiGe heterostructures with ultra thin layers and ultra sharp junctions promise a novel generation of silicon devices. The growth of strained SiGe enables us to apply bandgap engineering to silicon-based devices (HBT, MODFET).","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128026944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557324
S. Spanoche, G. B. Arsintescu
This paper describes a novel method for analog circuit partitioning and MOS transistor stacking. The method is based on a new algorithm dealing with analog specific constraints and on a set of heuristics for stack generation using a pattern database and transistor size trimming. Experimental results show the effectiveness of the method that is described.
{"title":"Stack based module generator for analog MOS circuits","authors":"S. Spanoche, G. B. Arsintescu","doi":"10.1109/SMICND.1996.557324","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557324","url":null,"abstract":"This paper describes a novel method for analog circuit partitioning and MOS transistor stacking. The method is based on a new algorithm dealing with analog specific constraints and on a set of heuristics for stack generation using a pattern database and transistor size trimming. Experimental results show the effectiveness of the method that is described.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131920615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557349
V. Bondarenko, A. Bondarenko, L.N. Dolgyi, A. Dorofeev, N. Kazuchits, V. Levchenko, N.N. Vorozov, S.A. Volchek, G.N. Troyanova, V. Yakovtseva
The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation of different heterostuctures: GaAs/PS/Si, C/PS/Si, PbS/PS/Si, PS:Er/Si, Si/SiO/sub 2//Si. The heterostructures were used for CMOS/SOI IC's, light emitting and waveguiding components. PS was shown to provide integration of opto- and microelectronic components on Si wafer.
{"title":"Porous silicon based heterostructures: formation, properties, and application","authors":"V. Bondarenko, A. Bondarenko, L.N. Dolgyi, A. Dorofeev, N. Kazuchits, V. Levchenko, N.N. Vorozov, S.A. Volchek, G.N. Troyanova, V. Yakovtseva","doi":"10.1109/SMICND.1996.557349","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557349","url":null,"abstract":"The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation of different heterostuctures: GaAs/PS/Si, C/PS/Si, PbS/PS/Si, PS:Er/Si, Si/SiO/sub 2//Si. The heterostructures were used for CMOS/SOI IC's, light emitting and waveguiding components. PS was shown to provide integration of opto- and microelectronic components on Si wafer.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134510988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557388
M. Padure
This work presents a dedicated CMOS chip intended to be used as an efficient and practical teaching support tool. The chip contains typical building blocks (individual transistors, current mirrors, differential pairs) which can be externally configured to realize different typical circuit topologies including amplifiers. Some layout techniques are used such as centroid designs, waffle-shaped (closed) transistors and regular layout structures.
{"title":"Analog ASIC for educational purposes","authors":"M. Padure","doi":"10.1109/SMICND.1996.557388","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557388","url":null,"abstract":"This work presents a dedicated CMOS chip intended to be used as an efficient and practical teaching support tool. The chip contains typical building blocks (individual transistors, current mirrors, differential pairs) which can be externally configured to realize different typical circuit topologies including amplifiers. Some layout techniques are used such as centroid designs, waffle-shaped (closed) transistors and regular layout structures.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134551094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557350
M. Ciurea, A. Pentia, M. Lazar, A. Belu-Marian, F. Zavaliche, R. Mănăila
The temperature dependence of the dark conductivity (between 150 and 300 K) and X-ray diffraction were measured on porous silicon with different porosities. It was found that the conduction mechanism depends on porosity. X-ray diffraction have revealed a lattice parameter increase, related to surface oxidation.
{"title":"Electrical and structural properties of anodized porous silicon","authors":"M. Ciurea, A. Pentia, M. Lazar, A. Belu-Marian, F. Zavaliche, R. Mănăila","doi":"10.1109/SMICND.1996.557350","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557350","url":null,"abstract":"The temperature dependence of the dark conductivity (between 150 and 300 K) and X-ray diffraction were measured on porous silicon with different porosities. It was found that the conduction mechanism depends on porosity. X-ray diffraction have revealed a lattice parameter increase, related to surface oxidation.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115586279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557433
G. Brezeanu, J. Fernandez, J. Millán, J. Rebollo, M. Badila, G. Dilimot, P. Lungu
A MEDICI simulation of 6H-SiC Schottky structure which uses the oxide ramp etching technique in order to attenuate edge effects is reported. The results of simulation show a uniform reverse current density and volume breakdown at Schottky structure with 300 V blocking voltage can be obtained for a maximum 5 degs, ramp angle of 1 /spl mu/m oxide.
{"title":"MEDICI simulation of 6H-SiC oxide ramp profile (ORP) Schottky structure","authors":"G. Brezeanu, J. Fernandez, J. Millán, J. Rebollo, M. Badila, G. Dilimot, P. Lungu","doi":"10.1109/SMICND.1996.557433","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557433","url":null,"abstract":"A MEDICI simulation of 6H-SiC Schottky structure which uses the oxide ramp etching technique in order to attenuate edge effects is reported. The results of simulation show a uniform reverse current density and volume breakdown at Schottky structure with 300 V blocking voltage can be obtained for a maximum 5 degs, ramp angle of 1 /spl mu/m oxide.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124810489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557390
J. Hybler, V. Svagr
The equipment for measuring of concentration profiles in semiconductor structures using the spreading resistance method has been developed. Device is designed for measuring local contact resistance in range from 1/spl Omega/ to 10M/spl Omega/ with high level of accuracy. Resistance is measured under conditions of dc constant current with measured contact voltage below 10 mV. The stepping of the sample holder and the measuring pin movement (down and up) and data collection and processing are fully controlled by the PC.
{"title":"The equipment for measuring of concentration profiles using the spreading resistance method","authors":"J. Hybler, V. Svagr","doi":"10.1109/SMICND.1996.557390","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557390","url":null,"abstract":"The equipment for measuring of concentration profiles in semiconductor structures using the spreading resistance method has been developed. Device is designed for measuring local contact resistance in range from 1/spl Omega/ to 10M/spl Omega/ with high level of accuracy. Resistance is measured under conditions of dc constant current with measured contact voltage below 10 mV. The stepping of the sample holder and the measuring pin movement (down and up) and data collection and processing are fully controlled by the PC.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123018125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557475
G. Crăciun, M. Bercu, L. Marica, C. Bercu, A. Dafinei, C. Flueraru, V. Grecu
IR and UV-VIS spectrometry were used to study the correlation between the anodization conditions and the structure of the porous silicon (PS). The specific surface area increase with the electric charge involved in the etching process. At the same time the total amount of SiH bonds in the PS layer depends on the value of the effective surface. The total electric charge passed through the sample has been related with integral IR absorbances of the Si-H and Si-H/sub 2/ bands. An approximately linear function was obtained, especially for SiH. The reactivity of the PS layer related with the anodization conditions have been studied using the behaviour of the Si-O-Si bands after the oxidation in air. The UV-VIS reflection spectrometry shows an interference patterns obtained in the case of a shallow porosity.
{"title":"Porous silicon properties investigated by IR and UV-VIS spectrometry","authors":"G. Crăciun, M. Bercu, L. Marica, C. Bercu, A. Dafinei, C. Flueraru, V. Grecu","doi":"10.1109/SMICND.1996.557475","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557475","url":null,"abstract":"IR and UV-VIS spectrometry were used to study the correlation between the anodization conditions and the structure of the porous silicon (PS). The specific surface area increase with the electric charge involved in the etching process. At the same time the total amount of SiH bonds in the PS layer depends on the value of the effective surface. The total electric charge passed through the sample has been related with integral IR absorbances of the Si-H and Si-H/sub 2/ bands. An approximately linear function was obtained, especially for SiH. The reactivity of the PS layer related with the anodization conditions have been studied using the behaviour of the Si-O-Si bands after the oxidation in air. The UV-VIS reflection spectrometry shows an interference patterns obtained in the case of a shallow porosity.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121706152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557402
C. Bose, C. Chakraborty, C. K. Sarkar
The subband energies in a quantum well (QW) with rectangular, triangular and parabolic potential profiles are calculated. The subband energies for rectangular QW are found to be the lowest among the three cases, while those for the triangular well are higher than the parabolic potential profile case. The photoelectric (PE) current density as a function of the well width and the incident photon energy is investigated for all the cases. The effect of size quantization is quite evident in all cases from the oscillatory variation of the PE current density.
{"title":"Photoelectric emission from quantum wells with various potential profiles","authors":"C. Bose, C. Chakraborty, C. K. Sarkar","doi":"10.1109/SMICND.1996.557402","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557402","url":null,"abstract":"The subband energies in a quantum well (QW) with rectangular, triangular and parabolic potential profiles are calculated. The subband energies for rectangular QW are found to be the lowest among the three cases, while those for the triangular well are higher than the parabolic potential profile case. The photoelectric (PE) current density as a function of the well width and the incident photon energy is investigated for all the cases. The effect of size quantization is quite evident in all cases from the oscillatory variation of the PE current density.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122794236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557416
D. Grabko, M. Medinskaya, N. Pyshnaya, I. Tiginyanu
The influence of electron irradiation (E/sub ir/=3.5-4 MeV, D=5.10/sup 15/3.10/sup 17/ cm/sup -2/) on InP:Fe and InP:Zn single crystal microhardness (H) was investigated in the present work. It was established that microhardness dependence on irradiation dose has a non-monotonous character. The presence of three regions at H(D) curves is explained by internal defect structure modifications.
{"title":"The variations of InP single crystal mechanical properties induced by electron irradiation","authors":"D. Grabko, M. Medinskaya, N. Pyshnaya, I. Tiginyanu","doi":"10.1109/SMICND.1996.557416","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557416","url":null,"abstract":"The influence of electron irradiation (E/sub ir/=3.5-4 MeV, D=5.10/sup 15/3.10/sup 17/ cm/sup -2/) on InP:Fe and InP:Zn single crystal microhardness (H) was investigated in the present work. It was established that microhardness dependence on irradiation dose has a non-monotonous character. The presence of three regions at H(D) curves is explained by internal defect structure modifications.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129964881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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