Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557363
P. Cosmin, M. Modreanu, S. Cosmin, C. Dunare, D. Popescu
This paper presents a study of APCVD doped oxides deposited on silicon substrate. Films of silicon dioxide, phosphosilicate, borosilicate, borophosphosilicate glass with different content of phosphorus and boron were studied as masks for etching in KOH solution. The experiments draw the conclusion that the best film is densified borophosphosilicate glass with 4 wt% P and 23 wt.% B. Also, good results were obtained for densified borosilicate glass. The densification treatment used is compatible with the aluminium metallisation process.
{"title":"APCVD doped oxides used as etch mask in KOH solution","authors":"P. Cosmin, M. Modreanu, S. Cosmin, C. Dunare, D. Popescu","doi":"10.1109/SMICND.1996.557363","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557363","url":null,"abstract":"This paper presents a study of APCVD doped oxides deposited on silicon substrate. Films of silicon dioxide, phosphosilicate, borosilicate, borophosphosilicate glass with different content of phosphorus and boron were studied as masks for etching in KOH solution. The experiments draw the conclusion that the best film is densified borophosphosilicate glass with 4 wt% P and 23 wt.% B. Also, good results were obtained for densified borosilicate glass. The densification treatment used is compatible with the aluminium metallisation process.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130953601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557478
Yo‐Sheng Lin, Shey-Shi Lu
The effect of extrinsic capacitances on the microwave performance of Ga/sub 0.51/In/sub 0.49/P/GaAs MISFETs was first studied experimentally and theoretically by varying the thickness of the Ga/sub 0.51/In/sub 0.49/P insulating layer. MISFETs with airbridge gate structure showed higher f/sub t/s, and f/sub max/s than those of MISFETs with traditional gate structure due to the lower extrinsic capacitances. Moreover, the maximum values of f/sub t/s, and f/sub max/s for a 1 /spl mu/m gate length device all happen when t is between 50 nm and 100 nm. These results demonstrate that Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFETs with insulator thickness between 50 nm and 100 nm were very suitable for microwave high power device applications.
{"title":"The effect of extrinsic capacitances on the microwave performance of Ga/sub 0.51/In/sub 0.49/P/GaAs MISFETs (0 nm/spl les/t/spl les/10 nm) grown by GSMBE","authors":"Yo‐Sheng Lin, Shey-Shi Lu","doi":"10.1109/SMICND.1996.557478","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557478","url":null,"abstract":"The effect of extrinsic capacitances on the microwave performance of Ga/sub 0.51/In/sub 0.49/P/GaAs MISFETs was first studied experimentally and theoretically by varying the thickness of the Ga/sub 0.51/In/sub 0.49/P insulating layer. MISFETs with airbridge gate structure showed higher f/sub t/s, and f/sub max/s than those of MISFETs with traditional gate structure due to the lower extrinsic capacitances. Moreover, the maximum values of f/sub t/s, and f/sub max/s for a 1 /spl mu/m gate length device all happen when t is between 50 nm and 100 nm. These results demonstrate that Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFETs with insulator thickness between 50 nm and 100 nm were very suitable for microwave high power device applications.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132136415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557355
C. Cobianu, P. Cosmin, R. Plugaru, D. Dascalu, J. Holleman
In this paper, the transition from homogeneous to heterogeneous kinetic regime is studied in the temperature range from 500 to 630/spl deg/C in a hot wall LPCVD industrial reactor. A hyperbolic-type dependence of the threshold SiH/sub 4/ flow rate (generating a strong homogeneous reaction) as a function of total pressure (in the range of 0.4-1.3 torr) is obtained for the hot wall LPCVD tube in the whole temperature range investigated. For a SiH/sub 4/ flow rate kept constant and higher than a certain value (50 sccm), a weak dependence of the threshold partial pressure on the deposition temperature is obtained for temperatures higher than 550/spl deg/C.
{"title":"LPCVD conditions generating an intense homogeneous decomposition of silane in the temperature range of 500-630/spl deg/C","authors":"C. Cobianu, P. Cosmin, R. Plugaru, D. Dascalu, J. Holleman","doi":"10.1109/SMICND.1996.557355","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557355","url":null,"abstract":"In this paper, the transition from homogeneous to heterogeneous kinetic regime is studied in the temperature range from 500 to 630/spl deg/C in a hot wall LPCVD industrial reactor. A hyperbolic-type dependence of the threshold SiH/sub 4/ flow rate (generating a strong homogeneous reaction) as a function of total pressure (in the range of 0.4-1.3 torr) is obtained for the hot wall LPCVD tube in the whole temperature range investigated. For a SiH/sub 4/ flow rate kept constant and higher than a certain value (50 sccm), a weak dependence of the threshold partial pressure on the deposition temperature is obtained for temperatures higher than 550/spl deg/C.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129848504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557417
D. Jishiashvili, Z. Shiolashvili, R. Janelidze, V. Gobronidze, E. Kutelia, L. Mosidze, I. Nakhutsrishvili, M. Katsiashvili
Application of amorphous, high resistivity O- and N-doped Ge films is proposed to solve some radiation hardness problems. The new type of insulating a-Ge:(O,N) films makes it possible to increase the radiation hardness of metal-insulator-semiconductor (MIS) transistors at least by 4 orders of magnitude. Fabrication of MIS integrated circuits on the basis of a-Ge:(O,N) films can enlarge the utilization of these advantageous devices in radioactive environment (space, nuclear power-plants etc.).
{"title":"Development of the amorphous, high resistivity Ge:(O,N) films for radiation-hardened MIS device applications","authors":"D. Jishiashvili, Z. Shiolashvili, R. Janelidze, V. Gobronidze, E. Kutelia, L. Mosidze, I. Nakhutsrishvili, M. Katsiashvili","doi":"10.1109/SMICND.1996.557417","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557417","url":null,"abstract":"Application of amorphous, high resistivity O- and N-doped Ge films is proposed to solve some radiation hardness problems. The new type of insulating a-Ge:(O,N) films makes it possible to increase the radiation hardness of metal-insulator-semiconductor (MIS) transistors at least by 4 orders of magnitude. Fabrication of MIS integrated circuits on the basis of a-Ge:(O,N) films can enlarge the utilization of these advantageous devices in radioactive environment (space, nuclear power-plants etc.).","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132390762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557396
I. Beloussov, V. Frolov
Time evolution of a nonequilibrium polariton condensate has been studied in the framework of at microscopic approach. It has been shown that due to polariton-polariton scattering a significant condensate depletion takes place in a comparatively short time interval. The condensate decay occurs in the form of multiple echo signals. Distribution-function dynamics of noncondensate polaritons have been investigated.
{"title":"Nonlinear free nutation of polaritons in direct-gap semiconductors","authors":"I. Beloussov, V. Frolov","doi":"10.1109/SMICND.1996.557396","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557396","url":null,"abstract":"Time evolution of a nonequilibrium polariton condensate has been studied in the framework of at microscopic approach. It has been shown that due to polariton-polariton scattering a significant condensate depletion takes place in a comparatively short time interval. The condensate decay occurs in the form of multiple echo signals. Distribution-function dynamics of noncondensate polaritons have been investigated.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132793758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557300
S. Pantelides, M. Ramamoorthy, A. Maiti, M. Chisholm, S. Pennycook
We review results of recent first-principles calculations that have led to comprehensive descriptions of a wide range of dynamical properties of impurities in Si. In particular we review the dynamics of clustering and declustering of As impurities in heavily-doped crystalline Si, the segregation of As impurities in the form of ordered chains in grain boundaries, and the very complex though seemingly simple migration of oxygen impurities in Si.
{"title":"Complex impurity dynamics in silicon","authors":"S. Pantelides, M. Ramamoorthy, A. Maiti, M. Chisholm, S. Pennycook","doi":"10.1109/SMICND.1996.557300","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557300","url":null,"abstract":"We review results of recent first-principles calculations that have led to comprehensive descriptions of a wide range of dynamical properties of impurities in Si. In particular we review the dynamics of clustering and declustering of As impurities in heavily-doped crystalline Si, the segregation of As impurities in the form of ordered chains in grain boundaries, and the very complex though seemingly simple migration of oxygen impurities in Si.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130065915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557405
V. Ursaki, I. Tiginyanu, V. Ichizli, A. Terletsky, N. Pyshnaya, S. Radautsan
The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing at 400 to 600/spl deg/C in InP single crystals have been found to result in a decrease of impurity activation. At the same time an improvement of activation efficiency was observed at annealing temperatures T/sub ann/>600/spl deg/C.
{"title":"Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals","authors":"V. Ursaki, I. Tiginyanu, V. Ichizli, A. Terletsky, N. Pyshnaya, S. Radautsan","doi":"10.1109/SMICND.1996.557405","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557405","url":null,"abstract":"The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing at 400 to 600/spl deg/C in InP single crystals have been found to result in a decrease of impurity activation. At the same time an improvement of activation efficiency was observed at annealing temperatures T/sub ann/>600/spl deg/C.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"296 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116456669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557319
O. Bodea, C. Roman, N. Santa, A. Levi, N. Prodan, E. Cordos, I. Manoviciu
One of the most sensitive and selective gas sensors for oxidising gases, like NO/sub x/, is that based on lead phthalocyanine. The theoretical sensing mechanism takes account of the relationship existing between the density of majority carriers and the partial pressure of the gas in the near environment of the sensor surface. The output signal response curve vs. NO/sub x/ partial pressure is found to be a power type function. A number of sensors were studied and their output signal was plotted. The experiment confirms the theoretical sensing mechanism. The mean value of the exponential term of the response curve is 0.38.
{"title":"The response curve /spl sigma///spl sigma//sub 0/ vs P/sub NOx/ of the NO/sub x/ sensor using organic semiconductors, a power type function","authors":"O. Bodea, C. Roman, N. Santa, A. Levi, N. Prodan, E. Cordos, I. Manoviciu","doi":"10.1109/SMICND.1996.557319","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557319","url":null,"abstract":"One of the most sensitive and selective gas sensors for oxidising gases, like NO/sub x/, is that based on lead phthalocyanine. The theoretical sensing mechanism takes account of the relationship existing between the density of majority carriers and the partial pressure of the gas in the near environment of the sensor surface. The output signal response curve vs. NO/sub x/ partial pressure is found to be a power type function. A number of sensors were studied and their output signal was plotted. The experiment confirms the theoretical sensing mechanism. The mean value of the exponential term of the response curve is 0.38.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133731864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557418
V. Obreja, G. Dinoiu
Some experimental facts related to electron irradiated or gold doped silicon p-n junctions are presented. After junction irradiation, the reverse recovery time decreases more than order of magnitude but the reverse current increase is not more than twice near room temperature. The behavior of such junctions from room temperature up to 320/spl deg/C reveals that present-day manufactured fast recovery junctions, may be dominated by a higher peripheral surface leakage current than for similar standard junctions, both at reverse bias and low forward bias.
{"title":"On the nature of leakage current of fast recovery silicon pn junctions","authors":"V. Obreja, G. Dinoiu","doi":"10.1109/SMICND.1996.557418","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557418","url":null,"abstract":"Some experimental facts related to electron irradiated or gold doped silicon p-n junctions are presented. After junction irradiation, the reverse recovery time decreases more than order of magnitude but the reverse current increase is not more than twice near room temperature. The behavior of such junctions from room temperature up to 320/spl deg/C reveals that present-day manufactured fast recovery junctions, may be dominated by a higher peripheral surface leakage current than for similar standard junctions, both at reverse bias and low forward bias.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133249343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557304
N. Sarlis, C. A. Londos
Localized vibrational mode (LVM) studies in neutron irradiated oxygen-rich silicon have been carried out in order to investigate the origin of certain bands appearing in the spectra after heat treatment. The investigation was mainly focused on two satellite lines at 840 cm/sup -1/ and 825 cm/sup -1/ observed on either side of the 829 cm/sup -1/ band of VO above 250/spl deg/C and 350/spl deg/C respectively, upon 15 min isochronal annealings. Theoretical analysis supports the identification of the two satellites with V/sub 2/O and V/sub 2/O/sub 2/ defects respectively.
{"title":"Infrared bands association with multivacancy-oxygen defects in silicon","authors":"N. Sarlis, C. A. Londos","doi":"10.1109/SMICND.1996.557304","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557304","url":null,"abstract":"Localized vibrational mode (LVM) studies in neutron irradiated oxygen-rich silicon have been carried out in order to investigate the origin of certain bands appearing in the spectra after heat treatment. The investigation was mainly focused on two satellite lines at 840 cm/sup -1/ and 825 cm/sup -1/ observed on either side of the 829 cm/sup -1/ band of VO above 250/spl deg/C and 350/spl deg/C respectively, upon 15 min isochronal annealings. Theoretical analysis supports the identification of the two satellites with V/sub 2/O and V/sub 2/O/sub 2/ defects respectively.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121700034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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