Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557406
D. Pantelica, G. Drafta, C. Borcan, D. Diaconescu, M. Buda, R. Ghiţă
This paper investigates the mass transport in Au/Cr contacts deposited on GaAs. Such contacts are commonly used as ohmic contacts on p-type GaAs. For characterisation we used the RBS technique, replacing the classical /spl alpha/ particles with /sup 7/Li ions. This allows a great improvement in depth and mass resolution.
{"title":"RBS analysis of Au/Cr contact on GaAs","authors":"D. Pantelica, G. Drafta, C. Borcan, D. Diaconescu, M. Buda, R. Ghiţă","doi":"10.1109/SMICND.1996.557406","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557406","url":null,"abstract":"This paper investigates the mass transport in Au/Cr contacts deposited on GaAs. Such contacts are commonly used as ohmic contacts on p-type GaAs. For characterisation we used the RBS technique, replacing the classical /spl alpha/ particles with /sup 7/Li ions. This allows a great improvement in depth and mass resolution.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131357157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557459
N. Iftimia, I. Spanulescu, I. Iftimia
An ordinary infrared detector that may be dominated by thermal generation or amplifier noise can serve as nearly theoretically perfect receiver when used in a heterodyne mode. A photoresistor has been compared with an optical immersed photoelectromagnetic detector with the same electrical area.
{"title":"Measurement of performances of uncooled HgCdTe photodetectors in heterodyne regime of operation","authors":"N. Iftimia, I. Spanulescu, I. Iftimia","doi":"10.1109/SMICND.1996.557459","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557459","url":null,"abstract":"An ordinary infrared detector that may be dominated by thermal generation or amplifier noise can serve as nearly theoretically perfect receiver when used in a heterodyne mode. A photoresistor has been compared with an optical immersed photoelectromagnetic detector with the same electrical area.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"53 376 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126014041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557394
T. Purītis
The initiation of impact ionisation is known to come mostly from light charge carriers. Transition from avalanche breakdown to thermoelectric breakdown, i.e., transition from light to heavy charge carrier caused breakdown is analysed in several microplasmas with increase in ambient temperature. Transition from light to heavy charge carrier caused secondary breakdown at increase current is analysed.
{"title":"Light and heavy charge carrier caused breakdown of silicon p-n junction","authors":"T. Purītis","doi":"10.1109/SMICND.1996.557394","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557394","url":null,"abstract":"The initiation of impact ionisation is known to come mostly from light charge carriers. Transition from avalanche breakdown to thermoelectric breakdown, i.e., transition from light to heavy charge carrier caused breakdown is analysed in several microplasmas with increase in ambient temperature. Transition from light to heavy charge carrier caused secondary breakdown at increase current is analysed.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133988463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557382
L. Festila, M. Neag, A. Fazakas, C. Stănescu
This paper presents our first attempts to implement a current-feedback Op Amp. We considered the possibility of using the ICCE full custom technology MONOCIP. We presents also the performances of this new circuit, comparatively with other existing CFB-OA (OPA 603).
{"title":"A MONOCIP integrated BT implementation of a current feedback Op Amp","authors":"L. Festila, M. Neag, A. Fazakas, C. Stănescu","doi":"10.1109/SMICND.1996.557382","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557382","url":null,"abstract":"This paper presents our first attempts to implement a current-feedback Op Amp. We considered the possibility of using the ICCE full custom technology MONOCIP. We presents also the performances of this new circuit, comparatively with other existing CFB-OA (OPA 603).","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133565189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557306
F. Gaisenu, C.A. Drimitriadis, J. Stoemenos, C. Postolache, C. Angelis
TEM investigations of the LP-LT-CVD thick (1500 nm) polySi layer on 16 nm SiO/sub 2//Si allow one to introduce specific mechanisms to explain the fast polySi regrowth and the SiO/sub 2/ degradation during a short-time (15 min.) moderate (1030/spl deg/C) heat-temperature treatment and during a subsequent 20 min., 1030/spl deg/C annealing.
{"title":"Structural modifications of the thick polysilicon layers on silicon during phosphorus diffusion: contributing mechanisms","authors":"F. Gaisenu, C.A. Drimitriadis, J. Stoemenos, C. Postolache, C. Angelis","doi":"10.1109/SMICND.1996.557306","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557306","url":null,"abstract":"TEM investigations of the LP-LT-CVD thick (1500 nm) polySi layer on 16 nm SiO/sub 2//Si allow one to introduce specific mechanisms to explain the fast polySi regrowth and the SiO/sub 2/ degradation during a short-time (15 min.) moderate (1030/spl deg/C) heat-temperature treatment and during a subsequent 20 min., 1030/spl deg/C annealing.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125609805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557321
E. Bodca, G. Ţelipan, I. Blaga
The paper presents a combustible gas detector mode by thick film technology. Two gold wires were coiled on a cylindrical alumina substrate to form the measuring electrodes. A platinum wire was used to heat the device. The sensitive film was produced by a /spl gamma/-Fe/sub 2/O/sub 3/-TiO/sub 2/ resistive ink. The device electrical resistance decreased from 1 M/spl Omega/ in pure air to 100 k/spl Omega/ in a 2000 ppm butane atmosphere for a working temperature of 300/spl deg/C.
{"title":"Combustible gas detector based on /spl gamma/-Fe/sub 2/O/sub 3/ semiconductor properties","authors":"E. Bodca, G. Ţelipan, I. Blaga","doi":"10.1109/SMICND.1996.557321","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557321","url":null,"abstract":"The paper presents a combustible gas detector mode by thick film technology. Two gold wires were coiled on a cylindrical alumina substrate to form the measuring electrodes. A platinum wire was used to heat the device. The sensitive film was produced by a /spl gamma/-Fe/sub 2/O/sub 3/-TiO/sub 2/ resistive ink. The device electrical resistance decreased from 1 M/spl Omega/ in pure air to 100 k/spl Omega/ in a 2000 ppm butane atmosphere for a working temperature of 300/spl deg/C.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122902437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557401
N. Dmitruk, A. Goncharenko, O.S. Gorea, A.S. Keyanu, V. Romaniuk, O.M. Tatarinskaya, E. F. Venger
The dispersion curves and electric fields spatial distribution of phonon-polaritons in finite superlattices were calculated. The experimental investigation of GaAs/GaAsP SLS by ATR-spectroscopy has given the possibility to interpret adequately the observed peculiarities.
{"title":"Observation of surface and interface phonon-polaritons in superlattices","authors":"N. Dmitruk, A. Goncharenko, O.S. Gorea, A.S. Keyanu, V. Romaniuk, O.M. Tatarinskaya, E. F. Venger","doi":"10.1109/SMICND.1996.557401","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557401","url":null,"abstract":"The dispersion curves and electric fields spatial distribution of phonon-polaritons in finite superlattices were calculated. The experimental investigation of GaAs/GaAsP SLS by ATR-spectroscopy has given the possibility to interpret adequately the observed peculiarities.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123934876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557307
P. Samanta, C. K. Sarkar
Metal-Oxide-Silicon (MOS) device degradation due to trapped holes in the bulk of thin SiO/sub 2/ (22-33 nm) gate oxide during low fluence Fowler-Nordheim (FN) injection from the accumulated <100> n-Si of n/sup +/ polySi gate MOS capacitors has been theoretically modeled. The model is based on tunneling electron initiated band-to-band impact ionization (BTBII) as the possible source of generated holes. The validity of the present analysis has been compared with the experimental data of FN voltage shift /spl Delta/V/sub FN/ of Fazan et al. A comparative study of degradation during constant current and voltage FN stress is also presented.
{"title":"Modeling of trapped hole induced MOS device degradation during Fowler-Nordheim stress","authors":"P. Samanta, C. K. Sarkar","doi":"10.1109/SMICND.1996.557307","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557307","url":null,"abstract":"Metal-Oxide-Silicon (MOS) device degradation due to trapped holes in the bulk of thin SiO/sub 2/ (22-33 nm) gate oxide during low fluence Fowler-Nordheim (FN) injection from the accumulated <100> n-Si of n/sup +/ polySi gate MOS capacitors has been theoretically modeled. The model is based on tunneling electron initiated band-to-band impact ionization (BTBII) as the possible source of generated holes. The validity of the present analysis has been compared with the experimental data of FN voltage shift /spl Delta/V/sub FN/ of Fazan et al. A comparative study of degradation during constant current and voltage FN stress is also presented.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124095992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557421
G. Amaratunga, F. Udea
The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 6 kV) applications. Such devices will be based on utilising the advantages brought about by trench gate MOSFETs to control bipolar current flow. The semiconductor phenomena which can be accessed to optimise power device performance through use of trench gate MOS channels are discussed. Device structures which use PIN diode and thyristor type carrier distributions to reduce power loss within the device are presented. The next generation of power switching devices is proposed as being based on trench gate devices which have hybrid PIN diode and dynamic thyristor structures.
{"title":"The new generation of power semiconductor devices","authors":"G. Amaratunga, F. Udea","doi":"10.1109/SMICND.1996.557421","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557421","url":null,"abstract":"The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 6 kV) applications. Such devices will be based on utilising the advantages brought about by trench gate MOSFETs to control bipolar current flow. The semiconductor phenomena which can be accessed to optimise power device performance through use of trench gate MOS channels are discussed. Device structures which use PIN diode and thyristor type carrier distributions to reduce power loss within the device are presented. The next generation of power switching devices is proposed as being based on trench gate devices which have hybrid PIN diode and dynamic thyristor structures.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129071616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557385
A. Korotov
Time resolved photoluminescence of the GaAs/GaAs/sub 0.76/P/sub 0.24/ superlattice (SL) have been investigated at 90 K temperature and different excitation levels. The transitions from electron minibands to holes are explained and it is shown that experimental results are described by SL model of II type with valence-band offset larger than conduction band offset.
{"title":"Optical properties of GaAs/GaAs/sub 1-x/P/sub x/ superlattices","authors":"A. Korotov","doi":"10.1109/SMICND.1996.557385","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557385","url":null,"abstract":"Time resolved photoluminescence of the GaAs/GaAs/sub 0.76/P/sub 0.24/ superlattice (SL) have been investigated at 90 K temperature and different excitation levels. The transitions from electron minibands to holes are explained and it is shown that experimental results are described by SL model of II type with valence-band offset larger than conduction band offset.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128515514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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