Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557313
Z. Jian, Shen De-xin, Wang Wei-yuan
The authors describe an analysis of a hybrid stator composed which includes a piezoelectric film and a Si substrate. By using the Rayleigh-Ritz method, the intrinsic frequency behaviours of the actual stators call be calculated with good results. The influence of the stresses including in-plane stress and flexural stress is introduced. In general, this method is accurate, flexible with respect to the boundary conditions and is easy to use. The result shows that the intrinsic frequency is affected by a number of parameters. Although there exists an error between the calculated and experimental values, the simulation provides an excellent agreement with the actual stator.
{"title":"An experimental and numerical study on the intrinsic frequency of micromachined piezoelectric motor stators","authors":"Z. Jian, Shen De-xin, Wang Wei-yuan","doi":"10.1109/SMICND.1996.557313","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557313","url":null,"abstract":"The authors describe an analysis of a hybrid stator composed which includes a piezoelectric film and a Si substrate. By using the Rayleigh-Ritz method, the intrinsic frequency behaviours of the actual stators call be calculated with good results. The influence of the stresses including in-plane stress and flexural stress is introduced. In general, this method is accurate, flexible with respect to the boundary conditions and is easy to use. The result shows that the intrinsic frequency is affected by a number of parameters. Although there exists an error between the calculated and experimental values, the simulation provides an excellent agreement with the actual stator.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129092819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557310
M. Avram, O. Neagoe, M. Simion
The purpose of this research was to design and fabricate a microdynamic system of three polysilicon gear wheels, using a three masks process for silicon microfabrication. The fabrication sequence of the micromechanical system is following the process described by Fan(1988) for micromachining detachable moving parts on silicon substrates. The basis for fabricating of movable parts is the use of sacrificial layers that act as spacers and they also keep the parts attached to the wafer during fabrication.
{"title":"Fabrication and improvement of polysilicon microdynamic gear wheels system","authors":"M. Avram, O. Neagoe, M. Simion","doi":"10.1109/SMICND.1996.557310","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557310","url":null,"abstract":"The purpose of this research was to design and fabricate a microdynamic system of three polysilicon gear wheels, using a three masks process for silicon microfabrication. The fabrication sequence of the micromechanical system is following the process described by Fan(1988) for micromachining detachable moving parts on silicon substrates. The basis for fabricating of movable parts is the use of sacrificial layers that act as spacers and they also keep the parts attached to the wafer during fabrication.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"322 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116782523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557346
E. Astrova, V. V. Emtsev, A. Lebedev, D. Poloskin, A.D. Remenyuk, Y. Rud’, R. Vitman
Properties of Porous Silicon (PS) subjected to gamma irradiation in an air ambient and in vacuum have been studied. Gamma-irradiation was carried out in usual room atmosphere, and in evacuated tubes. The samples of porous silicon were investigated by means of photoluminescence (PL) and infrared (IR) absorption. IR absorption measurements showed variations of the intensity of Si-H and Si-O bands with the irradiation dose.
{"title":"Effect of /spl gamma/-irradiation on photoluminescence of porous silicon","authors":"E. Astrova, V. V. Emtsev, A. Lebedev, D. Poloskin, A.D. Remenyuk, Y. Rud’, R. Vitman","doi":"10.1109/SMICND.1996.557346","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557346","url":null,"abstract":"Properties of Porous Silicon (PS) subjected to gamma irradiation in an air ambient and in vacuum have been studied. Gamma-irradiation was carried out in usual room atmosphere, and in evacuated tubes. The samples of porous silicon were investigated by means of photoluminescence (PL) and infrared (IR) absorption. IR absorption measurements showed variations of the intensity of Si-H and Si-O bands with the irradiation dose.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115572129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557345
D. Cristea, P. Cosmin, F. Craciunoiu
This paper presents two types of high-gain photodetectors, a photo-FET and a bipolar NPN phototransistor, with modified structures that allow the optical coupling to the waveguides. Because the photo-FET structure is different from that of the conventional field-effect-phototransistors, we had to develop a model for this device. The model takes into account two effects of the incident illumination: the variation of channel conductivity and the variation of channel dimensions due to the photovoltaic effect across the channel-gate junction. It has been concluded that, for low optical power and high gate bias resistance, the optical radiation controls the drain current by changing the channel conductance rather then its conductivity. The effect of the photovoltage was verified on a test structure. The two types of photodetectors can achieve high responsivities and can replace both a photodiode and a amplifier.
{"title":"High-responsivity silicon photodetectors for optoelectronic integrated systems","authors":"D. Cristea, P. Cosmin, F. Craciunoiu","doi":"10.1109/SMICND.1996.557345","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557345","url":null,"abstract":"This paper presents two types of high-gain photodetectors, a photo-FET and a bipolar NPN phototransistor, with modified structures that allow the optical coupling to the waveguides. Because the photo-FET structure is different from that of the conventional field-effect-phototransistors, we had to develop a model for this device. The model takes into account two effects of the incident illumination: the variation of channel conductivity and the variation of channel dimensions due to the photovoltaic effect across the channel-gate junction. It has been concluded that, for low optical power and high gate bias resistance, the optical radiation controls the drain current by changing the channel conductance rather then its conductivity. The effect of the photovoltage was verified on a test structure. The two types of photodetectors can achieve high responsivities and can replace both a photodiode and a amplifier.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116276164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557320
E. Bodea, I. Blaga, R. Apostolescu, P. Schiopu
A device for surface acoustic wave (SAW) measurements, based on an organic sensitive film, that is triethanolamine (TEA), has been realized. A dual SAW oscillator was used to measure the frequency shift due to gas adsorption in the TEA film. A linear response was obtained in the range 0-100 ppm SO/sub 2/ and the sensibility was about 80 Hz/ppm.
{"title":"Dual SAW oscillator for low SO/sub 2/ concentrations measurement","authors":"E. Bodea, I. Blaga, R. Apostolescu, P. Schiopu","doi":"10.1109/SMICND.1996.557320","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557320","url":null,"abstract":"A device for surface acoustic wave (SAW) measurements, based on an organic sensitive film, that is triethanolamine (TEA), has been realized. A dual SAW oscillator was used to measure the frequency shift due to gas adsorption in the TEA film. A linear response was obtained in the range 0-100 ppm SO/sub 2/ and the sensibility was about 80 Hz/ppm.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127238736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557397
P. I. Khadzhi, S. Gaivan
The transmission and reflection of ultrashort laser pulses by a thin semiconductor film are studied theoretically under the conditions corresponding to two-photon, two-pulse creation of biexcitons from the ground state. Specific examples are given to demonstrate various possibilities of controlling the transmission of both incident pulses by changing the amplitude of one of them.
{"title":"Nonlinear interaction between ultrashort laser pulses and a thin semiconductor film due to two-photon excitation of biexcitons","authors":"P. I. Khadzhi, S. Gaivan","doi":"10.1109/SMICND.1996.557397","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557397","url":null,"abstract":"The transmission and reflection of ultrashort laser pulses by a thin semiconductor film are studied theoretically under the conditions corresponding to two-photon, two-pulse creation of biexcitons from the ground state. Specific examples are given to demonstrate various possibilities of controlling the transmission of both incident pulses by changing the amplitude of one of them.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126557957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557380
M. Lazarescu, M. Sartori
In this paper we will describe a modality to speed up the design of the VLSI digital (mainly DSP) circuits and to reduce the design errors by increasing the interaction between the ad-hoc software program developed to validate the algorithm and the VHDL description and simulation. A real case of a digital power analyzer will be used for exemplification.
{"title":"Algorithm validation and hardware design interactive approach","authors":"M. Lazarescu, M. Sartori","doi":"10.1109/SMICND.1996.557380","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557380","url":null,"abstract":"In this paper we will describe a modality to speed up the design of the VLSI digital (mainly DSP) circuits and to reduce the design errors by increasing the interaction between the ad-hoc software program developed to validate the algorithm and the VHDL description and simulation. A real case of a digital power analyzer will be used for exemplification.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123060509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557338
O. Pronic, V. Markovic, N. Males-Ilic
The equivalent gate and drain noise temperatures of microwave FETs in terms of equivalent circuit elements, noise parameters and frequency are considered in this paper. The corresponding relationships are derived and a calculation procedure using circuit simulator Libra is developed. The frequency-dependent gate and drain temperatures are used for the transistor noise parameters modeling.
{"title":"Frequency dependence of the equivalent gate and drain noise temperatures of microwave transistors","authors":"O. Pronic, V. Markovic, N. Males-Ilic","doi":"10.1109/SMICND.1996.557338","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557338","url":null,"abstract":"The equivalent gate and drain noise temperatures of microwave FETs in terms of equivalent circuit elements, noise parameters and frequency are considered in this paper. The corresponding relationships are derived and a calculation procedure using circuit simulator Libra is developed. The frequency-dependent gate and drain temperatures are used for the transistor noise parameters modeling.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125546038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557335
A. Muller, S. Simion, M. Dragoman, S. Iordanescu, I. Petrini, C. Anton, D. Vasilache, V. Avramescu, A. Coraci, F. Craciunoiu
The paper presents the manufacturing and the measurements of a few type of the passive components dedicated to GaAs based MMICs. Mesa type resistors (with values in the range of 50...1000 /spl Omega/) were manufactured on a 0.15 /spl mu/m thick n/sup -/ layer (10/sup 17/) cm/sup -3/ grown on SI GaAs. Also, rectangular spiral inductors, loop inductors and interdigitated capacitor structures were realized using AuGe deposition on GaAs SI substrate and lift-off metallization technique. The computed values for the microwave parameters of the manufactured components are in good agreement with the experimental ones.
{"title":"Passive devices on GaAs substrate for MMICs applications","authors":"A. Muller, S. Simion, M. Dragoman, S. Iordanescu, I. Petrini, C. Anton, D. Vasilache, V. Avramescu, A. Coraci, F. Craciunoiu","doi":"10.1109/SMICND.1996.557335","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557335","url":null,"abstract":"The paper presents the manufacturing and the measurements of a few type of the passive components dedicated to GaAs based MMICs. Mesa type resistors (with values in the range of 50...1000 /spl Omega/) were manufactured on a 0.15 /spl mu/m thick n/sup -/ layer (10/sup 17/) cm/sup -3/ grown on SI GaAs. Also, rectangular spiral inductors, loop inductors and interdigitated capacitor structures were realized using AuGe deposition on GaAs SI substrate and lift-off metallization technique. The computed values for the microwave parameters of the manufactured components are in good agreement with the experimental ones.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122264653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-09DOI: 10.1109/SMICND.1996.557371
G. Dima, B. Govoreanu, T. Mouthaan, M. Profirescu
The operation of dual-collector vertical bipolar magnetotransistors (VMT) is analysed using the 2D process/device simulator TRENDY. This way insight in the device behaviour can be obtained by means of the internal distribution of all variables that are not accessible to experiments. By variation of device geometry, doping profile and terminal voltages/currents we are able to obtain "rules" for the optimisation of integrated magnetic microsensors.
{"title":"Numerical analysis of integrated bipolar magnetotransistors","authors":"G. Dima, B. Govoreanu, T. Mouthaan, M. Profirescu","doi":"10.1109/SMICND.1996.557371","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557371","url":null,"abstract":"The operation of dual-collector vertical bipolar magnetotransistors (VMT) is analysed using the 2D process/device simulator TRENDY. This way insight in the device behaviour can be obtained by means of the internal distribution of all variables that are not accessible to experiments. By variation of device geometry, doping profile and terminal voltages/currents we are able to obtain \"rules\" for the optimisation of integrated magnetic microsensors.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134505443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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