Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459245
M. Schramm, M. Hrobak, J. Schur, L. Schmidt
Scattering parameter measurements in the presence of crosstalk is a well documented problem. The available calibration methods, suited for the general 16-term error model, capable of taking the crosstalk into account, suffer from the required Thru-Standard, which has to be perfectly known. This information is hard to acquire in some cases. An approach which makes the advantage of the 7-term SOLR (Short-Open-Load-Reciprocal) accessible to the 16-term error model is discussed in this article. The mathematical description, the feasibility for multiport applications, measurement results and a brief sensitivity analysis will be presented.
{"title":"A SOLR calibration procedure for the 16-term error model","authors":"M. Schramm, M. Hrobak, J. Schur, L. Schmidt","doi":"10.23919/EUMC.2012.6459245","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459245","url":null,"abstract":"Scattering parameter measurements in the presence of crosstalk is a well documented problem. The available calibration methods, suited for the general 16-term error model, capable of taking the crosstalk into account, suffer from the required Thru-Standard, which has to be perfectly known. This information is hard to acquire in some cases. An approach which makes the advantage of the 7-term SOLR (Short-Open-Load-Reciprocal) accessible to the 16-term error model is discussed in this article. The mathematical description, the feasibility for multiport applications, measurement results and a brief sensitivity analysis will be presented.","PeriodicalId":266910,"journal":{"name":"2012 42nd European Microwave Conference","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114643839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459190
S. P. Jonasson, B. S. Jensen, T. Johansen
In this paper, a novel method for externally activating a pharmaceutical drug capsule by use of split-ring resonators (SRR) is introduced. To this end, the effect of the orientation of the SRRs on the ability to activate the capsules is examined. A coplanar waveguide is used to excite an identical pair of SRRs fabricated on a substrate, representing an enlarged lid for a pharmaceutical drug capsule. Orientations where the electric field component of a quasi-TEM wave lies across the gap of the SRRs provides the largest response. The optimal case is when the electric field component lies across the gap simultaneously with the magnetic field component normal to the SRRs. Furthermore, an analysis of the optimal conductivity and relative permittivity for enhanced temperature rise in the lid is performed. Conductivity of 0.09 S/m and relative permittivity of 12 shows the highest temperature rise.
{"title":"Study of split-ring resonators for use on a pharmaceutical drug capsule for microwave activated drug release","authors":"S. P. Jonasson, B. S. Jensen, T. Johansen","doi":"10.23919/EUMC.2012.6459190","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459190","url":null,"abstract":"In this paper, a novel method for externally activating a pharmaceutical drug capsule by use of split-ring resonators (SRR) is introduced. To this end, the effect of the orientation of the SRRs on the ability to activate the capsules is examined. A coplanar waveguide is used to excite an identical pair of SRRs fabricated on a substrate, representing an enlarged lid for a pharmaceutical drug capsule. Orientations where the electric field component of a quasi-TEM wave lies across the gap of the SRRs provides the largest response. The optimal case is when the electric field component lies across the gap simultaneously with the magnetic field component normal to the SRRs. Furthermore, an analysis of the optimal conductivity and relative permittivity for enhanced temperature rise in the lid is performed. Conductivity of 0.09 S/m and relative permittivity of 12 shows the highest temperature rise.","PeriodicalId":266910,"journal":{"name":"2012 42nd European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125803931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459122
P. Meineri, D. Dubuc, K. Grenier
This paper presents the design and evaluation of a liquid-based tunable loaded-line phase shifter. Its concept exploits the intrinsic dielectric characteristic of liquids to achieve tunability. This proof of concept benefits from the combination of high frequency microtechnologies and microfluidics capabilities. Two different liquids, ethanol and silicon-oil, have been evaluated. The fabricated circuit exhibits low losses of 0.54 dB at 20 GHz, moderate figure of merit about 10°/dB and very broadband capabilities as the differential time delay is close to 0.73 ps up to 40 GHz.
{"title":"Liquid-based tunable loaded-line phase shifter","authors":"P. Meineri, D. Dubuc, K. Grenier","doi":"10.23919/EUMC.2012.6459122","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459122","url":null,"abstract":"This paper presents the design and evaluation of a liquid-based tunable loaded-line phase shifter. Its concept exploits the intrinsic dielectric characteristic of liquids to achieve tunability. This proof of concept benefits from the combination of high frequency microtechnologies and microfluidics capabilities. Two different liquids, ethanol and silicon-oil, have been evaluated. The fabricated circuit exhibits low losses of 0.54 dB at 20 GHz, moderate figure of merit about 10°/dB and very broadband capabilities as the differential time delay is close to 0.73 ps up to 40 GHz.","PeriodicalId":266910,"journal":{"name":"2012 42nd European Microwave Conference","volume":"636 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126571344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459166
O. Jardel, M. Olivier, D. Lancereau, R. Aubry, E. Chartier, N. Sarazin, M. di Forte Poisson, S. Piotrowicz, M. Stanislawiak, D. Rimbert, S. Delage, P. Eudeline
This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with ~20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34W, 50% PAE with ~20.5 dB power gain in the [2.9 - 3.5GHz] frequency band, in pulsed conditions (50μs/10%). The device processing and the transistor performances are presented, as well as the design and the characterizations of the amplifiers. Pulse to pulse stability measurements were also carried out in order to evaluate their behavior under radar waveforms constraints.
{"title":"A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications","authors":"O. Jardel, M. Olivier, D. Lancereau, R. Aubry, E. Chartier, N. Sarazin, M. di Forte Poisson, S. Piotrowicz, M. Stanislawiak, D. Rimbert, S. Delage, P. Eudeline","doi":"10.23919/EUMC.2012.6459166","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459166","url":null,"abstract":"This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with ~20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34W, 50% PAE with ~20.5 dB power gain in the [2.9 - 3.5GHz] frequency band, in pulsed conditions (50μs/10%). The device processing and the transistor performances are presented, as well as the design and the characterizations of the amplifiers. Pulse to pulse stability measurements were also carried out in order to evaluate their behavior under radar waveforms constraints.","PeriodicalId":266910,"journal":{"name":"2012 42nd European Microwave Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121488065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459295
O. Tade, P. Gardner, P. Hall
The need for small antennas with wide instantaneous bandwidth is well established in mobile Cognitive radio nodes or transceivers. The fundamental limit of small antennas is a problem which passive matching cannot solve. However, non-Foster matching provides a means of getting around this problem. In this paper, we show a negative impedance converter that provides a negative capacitor up to 1.5GHz and we show how it can be used to match a small chassis antenna. This improves the instantaneous bandwidth of the antenna beyond what is achievable with passive matching.
{"title":"Negative impedance converters for broadband antenna matching","authors":"O. Tade, P. Gardner, P. Hall","doi":"10.23919/EUMC.2012.6459295","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459295","url":null,"abstract":"The need for small antennas with wide instantaneous bandwidth is well established in mobile Cognitive radio nodes or transceivers. The fundamental limit of small antennas is a problem which passive matching cannot solve. However, non-Foster matching provides a means of getting around this problem. In this paper, we show a negative impedance converter that provides a negative capacitor up to 1.5GHz and we show how it can be used to match a small chassis antenna. This improves the instantaneous bandwidth of the antenna beyond what is achievable with passive matching.","PeriodicalId":266910,"journal":{"name":"2012 42nd European Microwave Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131608508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459427
M. Abe, T. Ohshima, H. Hatakeyama, A. Itaba, N. Yoneda, T. Owada
To have broadband branch-line couplers with matching networks even at high frequencies such as X-band, a circuit construction using series capacitances and short-circuited stubs freeing from shunt capacitances is employed. Replacing the λ/4 transformers with lumped elements and being absorbed the caused shunt capacitances into adjacent λ/4 transmission lines segments, it is realized, and the lines become short. The branch-line coupler fabricated in multi-layer LTCC substrates is described. In addition to the design method, the designed and experimental results, indicate good performance: the amplitude imbalance does not exceed 0.5dB, the distributed phase difference error varies within 1.4°, the return loss and isolation are below -20dB over 23% of the bandwidth in X-band, are presented. Also, the size is compact compared with conventional couplers. On the basis of the results, it is verified that the proposed coupler is efficient.
{"title":"A broadband and compact branch-line coupler using series capacitances and short-circuited stubs","authors":"M. Abe, T. Ohshima, H. Hatakeyama, A. Itaba, N. Yoneda, T. Owada","doi":"10.23919/EUMC.2012.6459427","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459427","url":null,"abstract":"To have broadband branch-line couplers with matching networks even at high frequencies such as X-band, a circuit construction using series capacitances and short-circuited stubs freeing from shunt capacitances is employed. Replacing the λ/4 transformers with lumped elements and being absorbed the caused shunt capacitances into adjacent λ/4 transmission lines segments, it is realized, and the lines become short. The branch-line coupler fabricated in multi-layer LTCC substrates is described. In addition to the design method, the designed and experimental results, indicate good performance: the amplitude imbalance does not exceed 0.5dB, the distributed phase difference error varies within 1.4°, the return loss and isolation are below -20dB over 23% of the bandwidth in X-band, are presented. Also, the size is compact compared with conventional couplers. On the basis of the results, it is verified that the proposed coupler is efficient.","PeriodicalId":266910,"journal":{"name":"2012 42nd European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126445563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459331
A. Ramos, D. Girbau, A. Lázaro
This paper studies the impact in the performance of time-coded chipless UWB RFID tags when materials are attached to them. Specifically, in terms of read range and reading angle. The characterization is performed using a low-cost and portable integrated radar. Several typical materials where RFID tags are usually attached to are used in the study. A good performance is observed for the majority of the cases.
{"title":"Influence of materials in time-coded chipless RFID tags characterized using a low-cost UWB reader","authors":"A. Ramos, D. Girbau, A. Lázaro","doi":"10.23919/EUMC.2012.6459331","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459331","url":null,"abstract":"This paper studies the impact in the performance of time-coded chipless UWB RFID tags when materials are attached to them. Specifically, in terms of read range and reading angle. The characterization is performed using a low-cost and portable integrated radar. Several typical materials where RFID tags are usually attached to are used in the study. A good performance is observed for the majority of the cases.","PeriodicalId":266910,"journal":{"name":"2012 42nd European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130402491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A new RF MEMS technology enabling tunability for RF front-end RF ohmic relay based on a flexible anchorless membrane","authors":"O. Millet","doi":"10.23919/EUMC.2012.6459130","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459130","url":null,"abstract":"This paper presents a new RF MEMS relay dedicated to mobile applications. The challenges, the MEMS technology & the packaging solution are introduced.","PeriodicalId":266910,"journal":{"name":"2012 42nd European Microwave Conference","volume":"30 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120862465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459163
A. El-Akhdar, H. El-Hennawy, A. El-Tager
This paper presents a novel Quad-band power divider with equal division ratio operating at four arbitrary frequency bands. Two sections of transmission line transformers based on coupled microstrip lines are applied to obtain quad-band power divider. In addition, design methodology is proposed for the novel structure. A prototype is designed, simulated, fabricated and measured to operate at 2.1, 2.5, 3.5, and 3.8 GHz to fulfill the requirements of 3G and 4G applications. The proposed structure features reduced size and less resistors than other conventional techniques. Measurements are in very good agreement with simulations which verifies the proposed idea and design methodology.
{"title":"A novel design of Quad-band power divider for 3G and 4G applications","authors":"A. El-Akhdar, H. El-Hennawy, A. El-Tager","doi":"10.23919/EUMC.2012.6459163","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459163","url":null,"abstract":"This paper presents a novel Quad-band power divider with equal division ratio operating at four arbitrary frequency bands. Two sections of transmission line transformers based on coupled microstrip lines are applied to obtain quad-band power divider. In addition, design methodology is proposed for the novel structure. A prototype is designed, simulated, fabricated and measured to operate at 2.1, 2.5, 3.5, and 3.8 GHz to fulfill the requirements of 3G and 4G applications. The proposed structure features reduced size and less resistors than other conventional techniques. Measurements are in very good agreement with simulations which verifies the proposed idea and design methodology.","PeriodicalId":266910,"journal":{"name":"2012 42nd European Microwave Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121145503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.23919/EUMC.2012.6459435
A. Margomenos, M. Micovic, A. Kurdoghlian, K. Shinohara, D. Brown, C. Butler, I. Milosavljevic, P. B. Hasimoto, R. Grabar, P. Willadsen, R. Bowen, P. Patterson, M. Wetzel, D. Chow
We report a new approach for low-cost, scalable RF front-end packaging that enables “known good die” GaN MMICs to be combined with other ICs (Si, SiGe etc) and passives in an integrated 3D package that includes RF interconnects and cooling. The electroformed heat sink also serves as the substrate for creating the RF front-end. We call this multi-purpose layer the Integrated Thermal Array Plate (ITAP). Compared to conventionally mounted GaN power amplifiers (PA) using AuSn solder, the ITAP X-band PA showed 1.4× improvement in CW Pout (4.4W at 8 GHz) while the ITAP Ku-band showed 1.3× improvement in CW Pout (4W at 12 GHz). Compared to silver epoxy mounted PAs the improvement was 2× and 1.5× respectively. Additionally, by using a meandered GaN gate structure we demonstrated that the ITAP reduces the junction temperature by 40°C when the dissipated power is at 2W/mm or increases the power handling by 1.45× when the junction temperature is held at 150°C.
{"title":"Novel packaging, cooling and interconnection method for GaN high performance power amplifiers and GaN based RF front-ends","authors":"A. Margomenos, M. Micovic, A. Kurdoghlian, K. Shinohara, D. Brown, C. Butler, I. Milosavljevic, P. B. Hasimoto, R. Grabar, P. Willadsen, R. Bowen, P. Patterson, M. Wetzel, D. Chow","doi":"10.23919/EUMC.2012.6459435","DOIUrl":"https://doi.org/10.23919/EUMC.2012.6459435","url":null,"abstract":"We report a new approach for low-cost, scalable RF front-end packaging that enables “known good die” GaN MMICs to be combined with other ICs (Si, SiGe etc) and passives in an integrated 3D package that includes RF interconnects and cooling. The electroformed heat sink also serves as the substrate for creating the RF front-end. We call this multi-purpose layer the Integrated Thermal Array Plate (ITAP). Compared to conventionally mounted GaN power amplifiers (PA) using AuSn solder, the ITAP X-band PA showed 1.4× improvement in CW Pout (4.4W at 8 GHz) while the ITAP Ku-band showed 1.3× improvement in CW Pout (4W at 12 GHz). Compared to silver epoxy mounted PAs the improvement was 2× and 1.5× respectively. Additionally, by using a meandered GaN gate structure we demonstrated that the ITAP reduces the junction temperature by 40°C when the dissipated power is at 2W/mm or increases the power handling by 1.45× when the junction temperature is held at 150°C.","PeriodicalId":266910,"journal":{"name":"2012 42nd European Microwave Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128222155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：