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2012 42nd European Microwave Conference最新文献

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A SOLR calibration procedure for the 16-term error model 16项误差模型的SOLR校准程序
Pub Date : 2012-10-01 DOI: 10.23919/EUMC.2012.6459245
M. Schramm, M. Hrobak, J. Schur, L. Schmidt
Scattering parameter measurements in the presence of crosstalk is a well documented problem. The available calibration methods, suited for the general 16-term error model, capable of taking the crosstalk into account, suffer from the required Thru-Standard, which has to be perfectly known. This information is hard to acquire in some cases. An approach which makes the advantage of the 7-term SOLR (Short-Open-Load-Reciprocal) accessible to the 16-term error model is discussed in this article. The mathematical description, the feasibility for multiport applications, measurement results and a brief sensitivity analysis will be presented.
存在串扰的散射参数测量是一个有充分文献记载的问题。适用于一般16项误差模型的可用校准方法,能够考虑串扰,但受到所需的through - standard的影响,必须完全了解。在某些情况下,这些信息很难获得。本文讨论了一种使7项SOLR (Short-Open-Load-Reciprocal,短开放-负载-互反)的优势可被16项误差模型利用的方法。本文将给出其数学描述、多端口应用的可行性、测量结果和简要的灵敏度分析。
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引用次数: 8
Study of split-ring resonators for use on a pharmaceutical drug capsule for microwave activated drug release 用于药物胶囊微波释放的分裂环谐振器的研究
Pub Date : 2012-10-01 DOI: 10.23919/EUMC.2012.6459190
S. P. Jonasson, B. S. Jensen, T. Johansen
In this paper, a novel method for externally activating a pharmaceutical drug capsule by use of split-ring resonators (SRR) is introduced. To this end, the effect of the orientation of the SRRs on the ability to activate the capsules is examined. A coplanar waveguide is used to excite an identical pair of SRRs fabricated on a substrate, representing an enlarged lid for a pharmaceutical drug capsule. Orientations where the electric field component of a quasi-TEM wave lies across the gap of the SRRs provides the largest response. The optimal case is when the electric field component lies across the gap simultaneously with the magnetic field component normal to the SRRs. Furthermore, an analysis of the optimal conductivity and relative permittivity for enhanced temperature rise in the lid is performed. Conductivity of 0.09 S/m and relative permittivity of 12 shows the highest temperature rise.
本文介绍了一种利用劈裂环谐振器(SRR)进行药物胶囊外激活的新方法。为此,研究了srr的取向对胶囊激活能力的影响。共面波导用于激发在衬底上制造的一对相同的srr,代表药物胶囊的放大盖子。准瞬变电磁波的电场分量位于srr间隙的方向提供了最大的响应。最佳情况是电场分量与垂直于srr的磁场分量同时横过间隙。此外,还分析了盖子中提高温升的最佳电导率和相对介电常数。电导率为0.09 S/m,相对介电常数为12,温升最高。
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引用次数: 5
Liquid-based tunable loaded-line phase shifter 液体可调负载线移相器
Pub Date : 2012-10-01 DOI: 10.23919/EUMC.2012.6459122
P. Meineri, D. Dubuc, K. Grenier
This paper presents the design and evaluation of a liquid-based tunable loaded-line phase shifter. Its concept exploits the intrinsic dielectric characteristic of liquids to achieve tunability. This proof of concept benefits from the combination of high frequency microtechnologies and microfluidics capabilities. Two different liquids, ethanol and silicon-oil, have been evaluated. The fabricated circuit exhibits low losses of 0.54 dB at 20 GHz, moderate figure of merit about 10°/dB and very broadband capabilities as the differential time delay is close to 0.73 ps up to 40 GHz.
本文介绍了一种基于液体的可调谐负载线移相器的设计与评价。它的概念是利用液体固有的介电特性来实现可调性。这种概念验证得益于高频微技术和微流体能力的结合。对乙醇和硅油这两种不同的液体进行了评估。该电路在20 GHz时具有0.54 dB的低损耗,10°/dB左右的中等优值,并且在40 GHz时差分时延接近0.73 ps,具有非常宽带的性能。
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引用次数: 7
A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications 30W, 46% PAE s波段GaN HEMT MMIC功率放大器,用于雷达应用
Pub Date : 2012-10-01 DOI: 10.23919/EUMC.2012.6459166
O. Jardel, M. Olivier, D. Lancereau, R. Aubry, E. Chartier, N. Sarazin, M. di Forte Poisson, S. Piotrowicz, M. Stanislawiak, D. Rimbert, S. Delage, P. Eudeline
This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with ~20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34W, 50% PAE with ~20.5 dB power gain in the [2.9 - 3.5GHz] frequency band, in pulsed conditions (50μs/10%). The device processing and the transistor performances are presented, as well as the design and the characterizations of the amplifiers. Pulse to pulse stability measurements were also carried out in order to evaluate their behavior under radar waveforms constraints.
研究了s波段雷达用30w GaN HEMT MMIC功率放大器的性能。这些放大器在脉冲条件(50μs/10%)下,在[2.7 - 3.7 GHz]频段提供30w、46% PAE和~20 dB功率增益,在[2.9 - 3.5GHz]频段提供34W、50% PAE和~20.5 dB功率增益。介绍了器件的工艺和晶体管的性能,以及放大器的设计和特性。为了评估它们在雷达波形约束下的性能,还进行了脉冲对脉冲的稳定性测量。
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引用次数: 11
Negative impedance converters for broadband antenna matching 宽带天线匹配用负阻抗变换器
Pub Date : 2012-10-01 DOI: 10.23919/EUMC.2012.6459295
O. Tade, P. Gardner, P. Hall
The need for small antennas with wide instantaneous bandwidth is well established in mobile Cognitive radio nodes or transceivers. The fundamental limit of small antennas is a problem which passive matching cannot solve. However, non-Foster matching provides a means of getting around this problem. In this paper, we show a negative impedance converter that provides a negative capacitor up to 1.5GHz and we show how it can be used to match a small chassis antenna. This improves the instantaneous bandwidth of the antenna beyond what is achievable with passive matching.
在移动认知无线电节点或收发器中,对具有宽瞬时带宽的小型天线的需求已经得到了很好的证实。小天线的基本限制是无源匹配无法解决的问题。然而,非foster匹配提供了一种绕过这个问题的方法。在本文中,我们展示了一个负阻抗转换器,提供高达1.5GHz的负电容,并展示了如何使用它来匹配小型底盘天线。这提高了天线的瞬时带宽,超出了被动匹配所能达到的水平。
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引用次数: 15
A broadband and compact branch-line coupler using series capacitances and short-circuited stubs 一种宽频和紧凑型分支线耦合器,采用串联电容和短路短管
Pub Date : 2012-10-01 DOI: 10.23919/EUMC.2012.6459427
M. Abe, T. Ohshima, H. Hatakeyama, A. Itaba, N. Yoneda, T. Owada
To have broadband branch-line couplers with matching networks even at high frequencies such as X-band, a circuit construction using series capacitances and short-circuited stubs freeing from shunt capacitances is employed. Replacing the λ/4 transformers with lumped elements and being absorbed the caused shunt capacitances into adjacent λ/4 transmission lines segments, it is realized, and the lines become short. The branch-line coupler fabricated in multi-layer LTCC substrates is described. In addition to the design method, the designed and experimental results, indicate good performance: the amplitude imbalance does not exceed 0.5dB, the distributed phase difference error varies within 1.4°, the return loss and isolation are below -20dB over 23% of the bandwidth in X-band, are presented. Also, the size is compact compared with conventional couplers. On the basis of the results, it is verified that the proposed coupler is efficient.
为了使宽带支路耦合器在高频率(如x波段)具有匹配网络,采用串联电容和不受并联电容影响的短路存根的电路结构。用集总元件代替λ/4变压器,并将产生的并联电容吸收到相邻的λ/4传输线段中,从而使线路变短。介绍了在多层LTCC衬底上制造分支线耦合器的方法。设计结果和实验结果表明,该系统具有良好的性能:幅值不平衡不超过0.5dB,分布相位差误差在1.4°以内,回波损耗和隔离度在x波段23%带宽范围内低于-20dB。此外,与传统的耦合器相比,尺寸紧凑。在此基础上,验证了该耦合器的有效性。
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引用次数: 4
Influence of materials in time-coded chipless RFID tags characterized using a low-cost UWB reader 材料对采用低成本超宽带读写器的时间编码无芯片RFID标签的影响
Pub Date : 2012-10-01 DOI: 10.23919/EUMC.2012.6459331
A. Ramos, D. Girbau, A. Lázaro
This paper studies the impact in the performance of time-coded chipless UWB RFID tags when materials are attached to them. Specifically, in terms of read range and reading angle. The characterization is performed using a low-cost and portable integrated radar. Several typical materials where RFID tags are usually attached to are used in the study. A good performance is observed for the majority of the cases.
本文研究了在无时间编码的超宽带RFID标签上附加材料对其性能的影响。具体来说,在阅读范围和阅读角度方面。表征是使用低成本和便携式集成雷达进行的。研究中使用了RFID标签通常附着的几种典型材料。在大多数情况下,可以观察到良好的性能。
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引用次数: 6
A new RF MEMS technology enabling tunability for RF front-end RF ohmic relay based on a flexible anchorless membrane 一种基于柔性锚定膜的射频前端射频欧姆继电器可调的新型射频MEMS技术
Pub Date : 2012-10-01 DOI: 10.23919/EUMC.2012.6459130
O. Millet
This paper presents a new RF MEMS relay dedicated to mobile applications. The challenges, the MEMS technology & the packaging solution are introduced.
本文介绍了一种新的专用于移动应用的射频微机电系统继电器。介绍了MEMS技术面临的挑战和封装解决方案。
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引用次数: 1
A novel design of Quad-band power divider for 3G and 4G applications 一种适用于3G和4G应用的四频功率分配器的新设计
Pub Date : 2012-10-01 DOI: 10.23919/EUMC.2012.6459163
A. El-Akhdar, H. El-Hennawy, A. El-Tager
This paper presents a novel Quad-band power divider with equal division ratio operating at four arbitrary frequency bands. Two sections of transmission line transformers based on coupled microstrip lines are applied to obtain quad-band power divider. In addition, design methodology is proposed for the novel structure. A prototype is designed, simulated, fabricated and measured to operate at 2.1, 2.5, 3.5, and 3.8 GHz to fulfill the requirements of 3G and 4G applications. The proposed structure features reduced size and less resistors than other conventional techniques. Measurements are in very good agreement with simulations which verifies the proposed idea and design methodology.
提出了一种工作在任意四个频带上的四频带等分频比功率分配器。采用两段基于耦合微带线的传输线变压器,得到四频带功率分配器。此外,提出了新型结构的设计方法。设计、模拟、制造和测量了一个工作在2.1、2.5、3.5和3.8 GHz的原型,以满足3G和4G应用的要求。与其他传统技术相比,所提出的结构具有减小尺寸和减少电阻的特点。测量结果与仿真结果非常吻合,验证了所提出的思想和设计方法。
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引用次数: 2
Novel packaging, cooling and interconnection method for GaN high performance power amplifiers and GaN based RF front-ends GaN高性能功率放大器和基于GaN的射频前端的新型封装、冷却和互连方法
Pub Date : 2012-10-01 DOI: 10.23919/EUMC.2012.6459435
A. Margomenos, M. Micovic, A. Kurdoghlian, K. Shinohara, D. Brown, C. Butler, I. Milosavljevic, P. B. Hasimoto, R. Grabar, P. Willadsen, R. Bowen, P. Patterson, M. Wetzel, D. Chow
We report a new approach for low-cost, scalable RF front-end packaging that enables “known good die” GaN MMICs to be combined with other ICs (Si, SiGe etc) and passives in an integrated 3D package that includes RF interconnects and cooling. The electroformed heat sink also serves as the substrate for creating the RF front-end. We call this multi-purpose layer the Integrated Thermal Array Plate (ITAP). Compared to conventionally mounted GaN power amplifiers (PA) using AuSn solder, the ITAP X-band PA showed 1.4× improvement in CW Pout (4.4W at 8 GHz) while the ITAP Ku-band showed 1.3× improvement in CW Pout (4W at 12 GHz). Compared to silver epoxy mounted PAs the improvement was 2× and 1.5× respectively. Additionally, by using a meandered GaN gate structure we demonstrated that the ITAP reduces the junction temperature by 40°C when the dissipated power is at 2W/mm or increases the power handling by 1.45× when the junction temperature is held at 150°C.
我们报告了一种低成本,可扩展的RF前端封装的新方法,该方法使“已知好的芯片”GaN mmic能够与其他ic (Si, SiGe等)和无源相结合,在集成的3D封装中,包括RF互连和冷却。电铸散热器还用作创建射频前端的基板。我们称这种多用途层为集成热阵列板(ITAP)。与使用AuSn焊料的传统安装GaN功率放大器(PA)相比,ITAP x波段PA的连续输出功率提高了1.4倍(8 GHz时为4.4W),而ITAP ku波段PA的连续输出功率提高了1.3倍(12 GHz时为4W)。与环氧银贴片相比,性能分别提高了2倍和1.5倍。此外,通过使用弯曲的GaN栅极结构,我们证明当耗散功率为2W/mm时,ITAP将结温降低了40°C,当结温保持在150°C时,ITAP将功率处理提高了1.45倍。
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引用次数: 7
期刊
2012 42nd European Microwave Conference
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