Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745709
Y. Tcherniavskaya, V. Burkhay, A. Rocke, V. Shunkov, F. Gerfers
This report provides results of TID robustness tests of LVDS driver and receiver. 56 krad (Si) hardness with full performance has been achieved. With certain limitations circuits are working up to 100 krad (Si).
{"title":"TID Test Results of LVDS Driver and Receiver ICs with Extended Common Mode Capability","authors":"Y. Tcherniavskaya, V. Burkhay, A. Rocke, V. Shunkov, F. Gerfers","doi":"10.1109/radecs47380.2019.9745709","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745709","url":null,"abstract":"This report provides results of TID robustness tests of LVDS driver and receiver. 56 krad (Si) hardness with full performance has been achieved. With certain limitations circuits are working up to 100 krad (Si).","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123905337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745718
G. Mélin, A. Barnini, A. Morana, S. Girard, P. Guitton, R. Montron
Combined effect of radiation and temperature on the response of polyimide coated radiation hardened single-mode fibers is investigated in the context of distributed monitoring of large nuclear infrastructures. Radiation induced attenuation (RIA) is evaluated for doses ranging from 1 to 10 MGy(SiO2) and temperatures up to ∼250 °C. Measurements of fiber tensile strength are performed to better estimate conditions of safe operation before and after exposure to the severe environment. Finally, preliminary results obtained for a new optical fiber designed from an alternative preform fabrication process, Surface Plasma Chemical Vapor Deposition are presented. This fiber exhibits 1310 nm RIA below 7 dB/km after a 1 MGy(SiO2) dose paving the way toward optical fibers suited to extreme radiation environments.
{"title":"Combined effect of radiation and temperature: towards optical fibers suited to distributed sensing in extreme radiation environments","authors":"G. Mélin, A. Barnini, A. Morana, S. Girard, P. Guitton, R. Montron","doi":"10.1109/radecs47380.2019.9745718","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745718","url":null,"abstract":"Combined effect of radiation and temperature on the response of polyimide coated radiation hardened single-mode fibers is investigated in the context of distributed monitoring of large nuclear infrastructures. Radiation induced attenuation (RIA) is evaluated for doses ranging from 1 to 10 MGy(SiO2) and temperatures up to ∼250 °C. Measurements of fiber tensile strength are performed to better estimate conditions of safe operation before and after exposure to the severe environment. Finally, preliminary results obtained for a new optical fiber designed from an alternative preform fabrication process, Surface Plasma Chemical Vapor Deposition are presented. This fiber exhibits 1310 nm RIA below 7 dB/km after a 1 MGy(SiO2) dose paving the way toward optical fibers suited to extreme radiation environments.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122520491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745728
J. Hales, A. Khachatrian, J. Warner, S. Buchner, D. McMorrow
Quantitative pulsed-laser testing using two-photon absorption is challenging due to its complicated dependence on laser pulse parameters. This work focuses on an accurate, yet simplified, approach for enabling such quantitative testing.
{"title":"An Improved Approach for Quantitative Pulsed-Laser Single-Event Effects Testing Using Two-Photon Absorption","authors":"J. Hales, A. Khachatrian, J. Warner, S. Buchner, D. McMorrow","doi":"10.1109/radecs47380.2019.9745728","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745728","url":null,"abstract":"Quantitative pulsed-laser testing using two-photon absorption is challenging due to its complicated dependence on laser pulse parameters. This work focuses on an accurate, yet simplified, approach for enabling such quantitative testing.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125387100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper we propose an approach to distinguish between upset bursts induced by flash X-rays and pulsed neutrons, by analyzing upset-multiplicity occurrences. Test results of ISSI 65 nm SRAMs on a flash X-ray machine and a pulsed reactor are presented. We adopted binomial distributions to fit the obtained upset-multiplicity data. The pulsed-neutron results exhibit precise and consistent accordance with the binomial distributions. In contrast, the flash X-ray data sharply diverge from the binomial distributions as the dose rate exceeds the upset threshold. However, the discrepancy reduces significantly after the bit-upset proportion saturates at higher dose rates. Interestingly, the binomial distributions fit well with the flash X-ray data at all dose rates if combinations of 2 or 3 different binomial distributions are applied. To explain the observed phenomena, the underlying mechanisms of dose rate upsets and neutron-induced single event upsets are further discussed. Above all, the presented approach of analyzing upset-multiplicity occurrences of upset bursts provides a novel and straightforward means to differentiate localized and global effects, and is especially useful for dose-rate-upset analysis when the correspondence between physical and logical addresses is unavailable.
{"title":"Comparative Analysis of Upset-Multiplicity Occurrences due to Flash X-rays and Pulsed Neutrons in Commercial SRAMs","authors":"Chao Qi, Wei Chen, Yugang Wang, Guizhen Wang, Ruibin Li, Xiaoyan Bai, Xiaoming Jin","doi":"10.1109/radecs47380.2019.9745727","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745727","url":null,"abstract":"In this paper we propose an approach to distinguish between upset bursts induced by flash X-rays and pulsed neutrons, by analyzing upset-multiplicity occurrences. Test results of ISSI 65 nm SRAMs on a flash X-ray machine and a pulsed reactor are presented. We adopted binomial distributions to fit the obtained upset-multiplicity data. The pulsed-neutron results exhibit precise and consistent accordance with the binomial distributions. In contrast, the flash X-ray data sharply diverge from the binomial distributions as the dose rate exceeds the upset threshold. However, the discrepancy reduces significantly after the bit-upset proportion saturates at higher dose rates. Interestingly, the binomial distributions fit well with the flash X-ray data at all dose rates if combinations of 2 or 3 different binomial distributions are applied. To explain the observed phenomena, the underlying mechanisms of dose rate upsets and neutron-induced single event upsets are further discussed. Above all, the presented approach of analyzing upset-multiplicity occurrences of upset bursts provides a novel and straightforward means to differentiate localized and global effects, and is especially useful for dose-rate-upset analysis when the correspondence between physical and logical addresses is unavailable.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121254176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745651
Z. Zheng, Huiping Zhu, Xi Chen, Lei Wang, Bo Li, Jiantou Gao, Duoli Li, Jiajun Luo, Zhengsheng Han, Xinyue Liu, Jie Liu
MOS devices with $mathrm{A}1_{2}mathrm{O}_{3}$ dielectrics are irradiated sequentially using gamma rays and 1907 MeV tantalum ions, and the combined irradiation effects on the $mathrm{A}1_{2}mathrm{O}_{3}$ based MOS devices are investigated and the mechanism is analyzed.
{"title":"Combined Effects of Tantalum Ion and Gamma Ray Irradiations on MOS Devices with Atomic Layer Deposited $mathrm{A}1_{2}mathrm{O}_{3}$ Gate Dielectrics","authors":"Z. Zheng, Huiping Zhu, Xi Chen, Lei Wang, Bo Li, Jiantou Gao, Duoli Li, Jiajun Luo, Zhengsheng Han, Xinyue Liu, Jie Liu","doi":"10.1109/radecs47380.2019.9745651","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745651","url":null,"abstract":"MOS devices with $mathrm{A}1_{2}mathrm{O}_{3}$ dielectrics are irradiated sequentially using gamma rays and 1907 MeV tantalum ions, and the combined irradiation effects on the $mathrm{A}1_{2}mathrm{O}_{3}$ based MOS devices are investigated and the mechanism is analyzed.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115131103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745696
Jianqun Yang, Gang Lv, Lei Dong, Pengfei Xu, Xingji Li
In this paper, based on the sequential irradiation of 40 MeV Si ions and Co-60 gamma ray, a direct evidence of the annealing effect of ionization damage on displacement damage in 2N2219 NPN bipolar junction transistors (BJTs) is investigated. Electrical parameters are measured using KEITHLEY 4200-SCS semiconductor characterization system during irradiation. The radiation induced defects are characterized by deep level transient spectroscopy (DLTS). The experimental results show that the degradation of current gain for the F2N2219 BJTs for the sum of the independent Co-60 gamma radiation and heavy ion irradiation is larger than that for the sequential irradiations, indicating the existence of significant synergistic effect. For lower fluence of 40 MeV Si ions, when the dose of Co-60 gamma ray is lower, the excess base current of the irradiated transistors by the sequential irradiation is less than one of the irradiated transistors by the independent 40 MeV Si ions. When fluence of 40 MeV Si ions is more than 6×l08/cm2, all the excess base current of the irradiated transistors by the sequential irradiation is less than one of the irradiated transistors by the independent 40 MeV Si ions. These results show that ionization damage on the transistors caused by the subsequent Co-60 gamma ray has an annealing effect on displacement damage caused by the 40 MeV Si ions. DLTS analyses show that the displacement defects especially in V2(-/0) centers caused by the 40 MeV Si ions are annealed due to the oxide charges induced by Co-60 gamma ray irradiations. Moreover, the fluence of the independent 40 MeV Si ions is the larger, the annealing effect of the displacement defects is the more obvious.
{"title":"A Direct Evidence of the Annealing Effect of Ionization Damage on Displacement Damage in NPN Transistors","authors":"Jianqun Yang, Gang Lv, Lei Dong, Pengfei Xu, Xingji Li","doi":"10.1109/radecs47380.2019.9745696","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745696","url":null,"abstract":"In this paper, based on the sequential irradiation of 40 MeV Si ions and Co-60 gamma ray, a direct evidence of the annealing effect of ionization damage on displacement damage in 2N2219 NPN bipolar junction transistors (BJTs) is investigated. Electrical parameters are measured using KEITHLEY 4200-SCS semiconductor characterization system during irradiation. The radiation induced defects are characterized by deep level transient spectroscopy (DLTS). The experimental results show that the degradation of current gain for the F2N2219 BJTs for the sum of the independent Co-60 gamma radiation and heavy ion irradiation is larger than that for the sequential irradiations, indicating the existence of significant synergistic effect. For lower fluence of 40 MeV Si ions, when the dose of Co-60 gamma ray is lower, the excess base current of the irradiated transistors by the sequential irradiation is less than one of the irradiated transistors by the independent 40 MeV Si ions. When fluence of 40 MeV Si ions is more than 6×l08/cm2, all the excess base current of the irradiated transistors by the sequential irradiation is less than one of the irradiated transistors by the independent 40 MeV Si ions. These results show that ionization damage on the transistors caused by the subsequent Co-60 gamma ray has an annealing effect on displacement damage caused by the 40 MeV Si ions. DLTS analyses show that the displacement defects especially in V2(-/0) centers caused by the 40 MeV Si ions are annealed due to the oxide charges induced by Co-60 gamma ray irradiations. Moreover, the fluence of the independent 40 MeV Si ions is the larger, the annealing effect of the displacement defects is the more obvious.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129239380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745695
P. Maillard, Jeff Barton, M. Hart, Yanran P. Chen, M. Voogel
This paper examines the total ionizing dose (TID), single event upset (SEU) and latchup (SEL) response of Xilinx 20nm Kintex UltraScale™ for space applications. The Single Event Mitigation IP tool SEU response is also evaluated.
{"title":"Total Ionizing Dose and Single-Events characterization of Xilinx 20nm Kintex UltraScale™","authors":"P. Maillard, Jeff Barton, M. Hart, Yanran P. Chen, M. Voogel","doi":"10.1109/radecs47380.2019.9745695","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745695","url":null,"abstract":"This paper examines the total ionizing dose (TID), single event upset (SEU) and latchup (SEL) response of Xilinx 20nm Kintex UltraScale™ for space applications. The Single Event Mitigation IP tool SEU response is also evaluated.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129569250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745683
D. Wölk, S. Höffgen, Eike Paschkowski, M. Steffens, C. Cazzaniga, C. Frost
This abstract presents the results of SEE testing of commercial high power normally-off GaN-devices with an atmospheric-like neutron spectrum at ChipIR. Three different designs of GaN-HEMTs and one SiC-MOSFET were tested at different voltages and the cross sections were determined.
{"title":"Single Event Effects by atmospheric neutrons in commercial (COTS) normally-off GaN HEMT","authors":"D. Wölk, S. Höffgen, Eike Paschkowski, M. Steffens, C. Cazzaniga, C. Frost","doi":"10.1109/radecs47380.2019.9745683","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745683","url":null,"abstract":"This abstract presents the results of SEE testing of commercial high power normally-off GaN-devices with an atmospheric-like neutron spectrum at ChipIR. Three different designs of GaN-HEMTs and one SiC-MOSFET were tested at different voltages and the cross sections were determined.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125990669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745681
Si Chen, D. PRELE, F. Voisin, P. Laurent, A. Goldwurm
This work presents the radiation tolerance of a Warm Frond-End Electronics subsystem (WFEE), using Radiation Hardening By Design (RHBD) techniques based on a SiGe BiCMOS 350 nm ASIC technology. The subsystem is in the context of a developing X-Ray space observatory of ESA, named ATHENA, planned to operate in a halo orbit around the second Lagrangian point (L2 Sun - Earth) with 5-year lifetime at the end of the next decade. The WFEE is a mixed electronic system, including analog devices, such as low noise amplifier and current sources for amplifying and biasing cryogenic stages, and also integrating digital devices: serial decoders RS485/ I2C for configuring the current sources. Because of extreme radiation space environment, different RHBD techniques have been used to improve the radiation tolerance of the WFEE electronics. The tolerance against radiation effects TID and SEL have been assessed. The evolution of the main parameters of the amplifier (gain and noise) and of the current sources (output current and noise) with respect to different dose levels has also been measured. The measurements after irradiations show that the RHBD techniques are very effective for improving radiation hardening capabilities of electronic circuits based on this technology.
{"title":"Radiation Tolerance of RHBD techniques on a SiGe BiCMOS 350 nm ASIC technology","authors":"Si Chen, D. PRELE, F. Voisin, P. Laurent, A. Goldwurm","doi":"10.1109/radecs47380.2019.9745681","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745681","url":null,"abstract":"This work presents the radiation tolerance of a Warm Frond-End Electronics subsystem (WFEE), using Radiation Hardening By Design (RHBD) techniques based on a SiGe BiCMOS 350 nm ASIC technology. The subsystem is in the context of a developing X-Ray space observatory of ESA, named ATHENA, planned to operate in a halo orbit around the second Lagrangian point (L2 Sun - Earth) with 5-year lifetime at the end of the next decade. The WFEE is a mixed electronic system, including analog devices, such as low noise amplifier and current sources for amplifying and biasing cryogenic stages, and also integrating digital devices: serial decoders RS485/ I2C for configuring the current sources. Because of extreme radiation space environment, different RHBD techniques have been used to improve the radiation tolerance of the WFEE electronics. The tolerance against radiation effects TID and SEL have been assessed. The evolution of the main parameters of the amplifier (gain and noise) and of the current sources (output current and noise) with respect to different dose levels has also been measured. The measurements after irradiations show that the RHBD techniques are very effective for improving radiation hardening capabilities of electronic circuits based on this technology.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129100166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745654
Bo Li, B. Lu, Huo Jia, Yong Chen, Fengyuan Zhang, Zexin Su, Jantou Gao, Chunlin Wang, Wenxin Zhao, Hainan Liu
Transients with durations of dozens of seconds in a rad-hard four-channel CDS ASIC (XCR4C) for X-ray CCD were observed during $^{181}mathbf{Ta}^{31+}$ ions irradiation and were attributed to the complementary feedback mechanism in the bias circuit.
{"title":"Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events","authors":"Bo Li, B. Lu, Huo Jia, Yong Chen, Fengyuan Zhang, Zexin Su, Jantou Gao, Chunlin Wang, Wenxin Zhao, Hainan Liu","doi":"10.1109/radecs47380.2019.9745654","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745654","url":null,"abstract":"Transients with durations of dozens of seconds in a rad-hard four-channel CDS ASIC (XCR4C) for X-ray CCD were observed during $^{181}mathbf{Ta}^{31+}$ ions irradiation and were attributed to the complementary feedback mechanism in the bias circuit.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132574434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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