Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062466
M. Schroter, A. Pawlak, P. Sakalas, J. Krause, T. Nardmann
An overview on compact transistor modeling for mm-wave HBT technologies is provided. Using HICUM as a vehicle, a comparison to experimental DC, AC and large-signal data is performed. Selected examples are shown for advanced SiGeC and InP HBTs with operating frequencies (fT, fmax) of (300, 500) GHz and (350, 450) GHz, respectively. Good agreement between model and measurements is obtained for all characteristics
{"title":"SiGeC and InP HBT Compact Modeling for mm-Wave and THz Applications","authors":"M. Schroter, A. Pawlak, P. Sakalas, J. Krause, T. Nardmann","doi":"10.1109/CSICS.2011.6062466","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062466","url":null,"abstract":"An overview on compact transistor modeling for mm-wave HBT technologies is provided. Using HICUM as a vehicle, a comparison to experimental DC, AC and large-signal data is performed. Selected examples are shown for advanced SiGeC and InP HBTs with operating frequencies (fT, fmax) of (300, 500) GHz and (350, 450) GHz, respectively. Good agreement between model and measurements is obtained for all characteristics","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129605689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062431
G. Dewey, M. Radosavljevic, N. Mukherjee
This work summarizes the advantages and challenges of III-V channel transistors for high performance and low power logic applications with respect to Si CMOS. The challenge of heterogeneous integration of III-V on Si is addressed by integration of In0.7Ga0.3As QWFETs on Si substrates with a total composite buffer thickness successfully scaled down to 1.3um. The main advantages are demonstrated with Schottky-Gate In0.7Ga0.3As QWFET on Si substrate showing 4.6X to 3.3X effective velocity gain over Si n-MOSFET for a VCC range of 0.5V to 1.0V, and 65% intrinsic drive current gain over Si nMOSFET at VCC = 0.5V. In addition, the challenge of further scaling and reduction of the high gate leakage that occurs in Schottky-gate devices is addressed by successful integration of an advanced composite high-K gate stack in the In0.7Ga0.3As QWFET.
{"title":"III-V Quantum Well Field Effect Transistors on Silicon for Future High Performance and Low Power Logic Applications","authors":"G. Dewey, M. Radosavljevic, N. Mukherjee","doi":"10.1109/CSICS.2011.6062431","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062431","url":null,"abstract":"This work summarizes the advantages and challenges of III-V channel transistors for high performance and low power logic applications with respect to Si CMOS. The challenge of heterogeneous integration of III-V on Si is addressed by integration of In0.7Ga0.3As QWFETs on Si substrates with a total composite buffer thickness successfully scaled down to 1.3um. The main advantages are demonstrated with Schottky-Gate In0.7Ga0.3As QWFET on Si substrate showing 4.6X to 3.3X effective velocity gain over Si n-MOSFET for a VCC range of 0.5V to 1.0V, and 65% intrinsic drive current gain over Si nMOSFET at VCC = 0.5V. In addition, the challenge of further scaling and reduction of the high gate leakage that occurs in Schottky-gate devices is addressed by successful integration of an advanced composite high-K gate stack in the In0.7Ga0.3As QWFET.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114915408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062472
J. Harvey, S. Mahon, William F. Montgomery III
Over the last two decades, the capability and implementation of mm-wave point-to-point radios has changed almost beyond recognition. A manually-tuned, waveguide-aficionado's delight has evolved into a highly manufacturable, field programmable terminal with lower cost, higher performance and much greater utility. These changes have depended largely on the availability and performance of GaAs Microwave Monolithic Integrated Circuits (MMICs). Waveguide mounted diodes of various types have been replaced by highly integrated receiver LNA-mixer, transmitter mixer-buffer and PA blocks manufactured in commercial foundries and packaged in SMT packages which can be machine assembled onto micro strip radio boards. At these frequencies, "split" configurations are required to minimise RF losses, so the microwave components are exposed to a severe temperature range in an outdoor environment and power efficiency becomes very important.
{"title":"History and Evolution of Millimetre-Wave MMICs for Point-to-Point Radio","authors":"J. Harvey, S. Mahon, William F. Montgomery III","doi":"10.1109/CSICS.2011.6062472","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062472","url":null,"abstract":"Over the last two decades, the capability and implementation of mm-wave point-to-point radios has changed almost beyond recognition. A manually-tuned, waveguide-aficionado's delight has evolved into a highly manufacturable, field programmable terminal with lower cost, higher performance and much greater utility. These changes have depended largely on the availability and performance of GaAs Microwave Monolithic Integrated Circuits (MMICs). Waveguide mounted diodes of various types have been replaced by highly integrated receiver LNA-mixer, transmitter mixer-buffer and PA blocks manufactured in commercial foundries and packaged in SMT packages which can be machine assembled onto micro strip radio boards. At these frequencies, \"split\" configurations are required to minimise RF losses, so the microwave components are exposed to a severe temperature range in an outdoor environment and power efficiency becomes very important.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128360610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062432
N. Cheng, James P. Young
Multimode multiband (MMMB) power amplifiers have been developed in recent years for next generation mobile handsets and tablets applications. Designers face new and greater challenges due to more stringent requirements in functionality, performance, size and cost. This paper will discuss the motivations that drive MMMB PA development and the requirements, challenges and considerations relevant to power amplifier design.
{"title":"Challenges and Requirements of Multimode Multiband Power Amplifiers for Mobile Applications","authors":"N. Cheng, James P. Young","doi":"10.1109/CSICS.2011.6062432","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062432","url":null,"abstract":"Multimode multiband (MMMB) power amplifiers have been developed in recent years for next generation mobile handsets and tablets applications. Designers face new and greater challenges due to more stringent requirements in functionality, performance, size and cost. This paper will discuss the motivations that drive MMMB PA development and the requirements, challenges and considerations relevant to power amplifier design.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128422097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062455
S. Piotrowicz, E. Chartier, O. Jardel, J. Dufraisse, G. Callet, J. Jacquet, D. Lancereau, E. Morvan, R. Aubry, N. Sarazin, C. Dua, M. Oualli, M. A. Di-Forte Poisson, S. Delage
We report on AlInN/GaN HEMTs fabricated using 0.7µm gate length on SiC substrate by Low Pressure Metal Organic Vapor Phase Epitaxy. Static and pulsed DC characteristics show a maximum dc transconductance of 275mS/mm and drain current of 0.9A/mm. Small signal characterizations show Ft and Fmag of 15 and 40 GHz respectively. Load-pull power measurements were performed at S-Band. At 3.5 GHz, an output power of 13W (41.2dBm) corresponding to 6.6W/mm of power density with a PAE of 70% is reached in pulse mode on 2mm devices. 19.2mm power dies allow us to achieve an output power of 56W with 54% of PAE at 2 GHz. To our knowledge, this result represents the highest output power ever reported for AlInN-based HEMT technology.
{"title":"Development of InAlN/GaN HEMTs Power Devices in S-Band","authors":"S. Piotrowicz, E. Chartier, O. Jardel, J. Dufraisse, G. Callet, J. Jacquet, D. Lancereau, E. Morvan, R. Aubry, N. Sarazin, C. Dua, M. Oualli, M. A. Di-Forte Poisson, S. Delage","doi":"10.1109/CSICS.2011.6062455","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062455","url":null,"abstract":"We report on AlInN/GaN HEMTs fabricated using 0.7µm gate length on SiC substrate by Low Pressure Metal Organic Vapor Phase Epitaxy. Static and pulsed DC characteristics show a maximum dc transconductance of 275mS/mm and drain current of 0.9A/mm. Small signal characterizations show Ft and Fmag of 15 and 40 GHz respectively. Load-pull power measurements were performed at S-Band. At 3.5 GHz, an output power of 13W (41.2dBm) corresponding to 6.6W/mm of power density with a PAE of 70% is reached in pulse mode on 2mm devices. 19.2mm power dies allow us to achieve an output power of 56W with 54% of PAE at 2 GHz. To our knowledge, this result represents the highest output power ever reported for AlInN-based HEMT technology.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134488946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062458
E. Douglas, S. Pearton, B. Poling, F. Ren, E. Heller, D. Via
AlGaN/GaN HEMTs with a gate length of 0.125 µm were stressed at Class AB condition, 10 GHz under 3 dB compression for up to 350 hours. Devices exhibited excellent RF stability up to a drain bias of 20 V. Rapid degradation was observed for a drain bias of 25 V. Substantial Schottky contact degradation was observed for all three bias conditions. Electroluminescence indicates localized points of failure along the channel length, and micro- photoluminescence indicates an increase in non- radiative trap formation in regions of failure.
{"title":"Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation","authors":"E. Douglas, S. Pearton, B. Poling, F. Ren, E. Heller, D. Via","doi":"10.1109/CSICS.2011.6062458","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062458","url":null,"abstract":"AlGaN/GaN HEMTs with a gate length of 0.125 µm were stressed at Class AB condition, 10 GHz under 3 dB compression for up to 350 hours. Devices exhibited excellent RF stability up to a drain bias of 20 V. Rapid degradation was observed for a drain bias of 25 V. Substantial Schottky contact degradation was observed for all three bias conditions. Electroluminescence indicates localized points of failure along the channel length, and micro- photoluminescence indicates an increase in non- radiative trap formation in regions of failure.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"35 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114104079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062456
M. D. Hodge, R. Vetury, J. Shealy, R. Adams
The authors report results suggesting that GaN HEMTs developed for RF switching applications do not suffer from an inverse piezo effect related reliability failure mechanism. A critical voltage was not observed prior to breakdown voltage, suggesting a robust GaN HEMT technology well suited for RF switching applications.
{"title":"A Robust AlGaN/GaN HEMT Technology for RF Switching Applications","authors":"M. D. Hodge, R. Vetury, J. Shealy, R. Adams","doi":"10.1109/CSICS.2011.6062456","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062456","url":null,"abstract":"The authors report results suggesting that GaN HEMTs developed for RF switching applications do not suffer from an inverse piezo effect related reliability failure mechanism. A critical voltage was not observed prior to breakdown voltage, suggesting a robust GaN HEMT technology well suited for RF switching applications.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124960761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062441
J. Dupuy, A. Konczykowska, F. Jorge, M. Riet, P. Berdaguer, J. Godin
We report the design, fabrication and measurement of a 43 Gb/s differential limiting amplifier integrating a transimpedance amplifier (TIA) as input stage and a distributed amplifier (Driver) as output stage, realised in a 1.5-µm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. With a differential gain higher than 52 dB, the TIA-Driver provides a constant 6 Vpp differential output amplitude for an input amplitude ranging from 12.7 mVpp to 405 mVpp, achieving more than 30 dB of electrical dynamic range, for a power consumption of 2.7 W. Designed to be used between a photodiode and an electro-optical modulator, this circuit is well suited for optical-to-electrical-to-optical (O-E-O) wavelength converters at up to 43 Gb/s.
{"title":"A 6 Vpp, 52 dB, 30-dB Dynamic Range, 43 Gb/s InP DHBT Differential Limiting Amplifier","authors":"J. Dupuy, A. Konczykowska, F. Jorge, M. Riet, P. Berdaguer, J. Godin","doi":"10.1109/CSICS.2011.6062441","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062441","url":null,"abstract":"We report the design, fabrication and measurement of a 43 Gb/s differential limiting amplifier integrating a transimpedance amplifier (TIA) as input stage and a distributed amplifier (Driver) as output stage, realised in a 1.5-µm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. With a differential gain higher than 52 dB, the TIA-Driver provides a constant 6 Vpp differential output amplitude for an input amplitude ranging from 12.7 mVpp to 405 mVpp, achieving more than 30 dB of electrical dynamic range, for a power consumption of 2.7 W. Designed to be used between a photodiode and an electro-optical modulator, this circuit is well suited for optical-to-electrical-to-optical (O-E-O) wavelength converters at up to 43 Gb/s.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123277048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062491
V. Zomorrodian, R. York
A MMIC frequency doubler using the AlGaN/GaN HEMT technology is presented in this letter. At the design frequency of f0 = 4 GHz and VDS = 35 V the circuit produced maximum output power of 30 dBm with a conversion gain of 5.5 dB, and maximum conversion gain of 13.8 dB with output power of 23 dBm and output fundamental suppression of more than 11 dBc. The best output fundamental suppression was achieved at f0 = 4.15 GHz. At this input frequency the circuit produced maximum output power of 28.7 dBm with a conversion gain of 4.5 dB, and maximum conversion gain of 13.6 dB at the output power level of 22.8 dBm with output fundamental suppression of better than 19 dBc. The reason for the better output fundamental suppression at f0 = 4.15 GHz is the slight mistuning in the high Q shunt resonator in the output network.
{"title":"A MMIC Frequency Doubler Using AlGaN/GaN HEMT Technology","authors":"V. Zomorrodian, R. York","doi":"10.1109/CSICS.2011.6062491","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062491","url":null,"abstract":"A MMIC frequency doubler using the AlGaN/GaN HEMT technology is presented in this letter. At the design frequency of f0 = 4 GHz and VDS = 35 V the circuit produced maximum output power of 30 dBm with a conversion gain of 5.5 dB, and maximum conversion gain of 13.8 dB with output power of 23 dBm and output fundamental suppression of more than 11 dBc. The best output fundamental suppression was achieved at f0 = 4.15 GHz. At this input frequency the circuit produced maximum output power of 28.7 dBm with a conversion gain of 4.5 dB, and maximum conversion gain of 13.6 dB at the output power level of 22.8 dBm with output fundamental suppression of better than 19 dBc. The reason for the better output fundamental suppression at f0 = 4.15 GHz is the slight mistuning in the high Q shunt resonator in the output network.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"54 34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132161732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062438
Koji Fukuda, G. Ono, K. Watanabe, T. Muto, H. Yamashita, N. Masuda, R. Nemoto, Eiichi Suzuki, T. Takemoto, F. Yuki, M. Yagyu, H. Toyoda, M. Kono, Akihiro Kambe, Seiichi Umai, T. Saito, S. Nishimura
The world's first CMOS "gearbox LSI" based on 65-nm CMOS technology-namely, a 2-W 100-gigabit-Ethernet gearbox LSI combining a 10:4 multiplexer and a 4:10 demultiplexer-was developed. Its power consumption is 75% lower than that of a conventional SiGe-based gearbox LSI. The power consumption of its 12.5-Gb/s interface is 0.98 mW/(Gb/s), while that of its 25- Gb/s interface is 14 mW/(Gb/s).
世界上第一个基于65纳米CMOS技术的CMOS“变速箱LSI”，即结合10:4多路复用器和4:10解路复用器的2 w 100千兆以太网变速箱LSI，被开发出来。它的功耗比传统的基于sig的齿轮箱LSI低75%。其12.5 Gb/s接口功耗为0.98 mW/(Gb/s)， 25gb /s接口功耗为14 mW/(Gb/s)。
{"title":"A CMOS Low-Power 10:4 MUX and 4:10 DEMUX Gearbox IC for 100-Gigabit Ethernet Link","authors":"Koji Fukuda, G. Ono, K. Watanabe, T. Muto, H. Yamashita, N. Masuda, R. Nemoto, Eiichi Suzuki, T. Takemoto, F. Yuki, M. Yagyu, H. Toyoda, M. Kono, Akihiro Kambe, Seiichi Umai, T. Saito, S. Nishimura","doi":"10.1109/CSICS.2011.6062438","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062438","url":null,"abstract":"The world's first CMOS \"gearbox LSI\" based on 65-nm CMOS technology-namely, a 2-W 100-gigabit-Ethernet gearbox LSI combining a 10:4 multiplexer and a 4:10 demultiplexer-was developed. Its power consumption is 75% lower than that of a conventional SiGe-based gearbox LSI. The power consumption of its 12.5-Gb/s interface is 0.98 mW/(Gb/s), while that of its 25- Gb/s interface is 14 mW/(Gb/s).","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116536314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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