Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117466
Bruce C. Kim, Anurag Gupta
This paper describes two unique device topologies: single ZnO nanowire and array ZnO nanowire-based devices. Two device topologies have been fabricated and compared for their sensing performance. The single nanowire device has been fabricated through focused ion beam and e-beam lithography techniques while the SEM and EDAX analysis have been used to characterize the device. The IV characteristics of the ZnO nanowire-based array devices have been measured through a semiconductor parameter analyzer.
{"title":"Device synthesis topology for zinc oxide nanowire sensors","authors":"Bruce C. Kim, Anurag Gupta","doi":"10.1109/NANO.2017.8117466","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117466","url":null,"abstract":"This paper describes two unique device topologies: single ZnO nanowire and array ZnO nanowire-based devices. Two device topologies have been fabricated and compared for their sensing performance. The single nanowire device has been fabricated through focused ion beam and e-beam lithography techniques while the SEM and EDAX analysis have been used to characterize the device. The IV characteristics of the ZnO nanowire-based array devices have been measured through a semiconductor parameter analyzer.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127669697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117430
Md. Mer Mosharraf Hossain, S. Ahmed, S. M. Shahriar, Md. S. U. Zzaman, Avijit Das, A. Saha, Md. Belal Hossain Bhuian
In this paper, we mainly focused on analyzing the thermoelectric property i.e. figure of merit of different nanostructured materials in room temperature (300–310 K). Here we studied the transition-metal dichalcogenides, particularly Molybdenum Disulfide (MoS2); Metal Oxides, specifically Zinc Oxide (ZnO); and conventional semiconductor materials, i.e. n-type and p-type Silicon (Si) and Silicon Germanium (SiGe). At first, we calculated the electrical conductance (Ge), by using electronic density functional theory (DFT). Similarly, we calculated the thermal conductance (κ) using Tersoff empirical potential (TEP) model. With these calculated values of Ge and κ and the Seebeck coefficient (S), we calculated the figure of merit (ZT) at different room temperatures. The main findings of our research were the increased ZT of MoS2, which is slightly larger than p-type Si while, 2∼3 times larger than ZnO and 100∼103 times larger than conventionally used SiGe and n-type Si at room temperatures. We have further investigated a thermoelectric generator (TEG) device with these materials to validate our result.
{"title":"Figure of merit analysis of nanostructured thermoelectric materials at room temperature","authors":"Md. Mer Mosharraf Hossain, S. Ahmed, S. M. Shahriar, Md. S. U. Zzaman, Avijit Das, A. Saha, Md. Belal Hossain Bhuian","doi":"10.1109/NANO.2017.8117430","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117430","url":null,"abstract":"In this paper, we mainly focused on analyzing the thermoelectric property i.e. figure of merit of different nanostructured materials in room temperature (300–310 K). Here we studied the transition-metal dichalcogenides, particularly Molybdenum Disulfide (MoS2); Metal Oxides, specifically Zinc Oxide (ZnO); and conventional semiconductor materials, i.e. n-type and p-type Silicon (Si) and Silicon Germanium (SiGe). At first, we calculated the electrical conductance (Ge), by using electronic density functional theory (DFT). Similarly, we calculated the thermal conductance (κ) using Tersoff empirical potential (TEP) model. With these calculated values of Ge and κ and the Seebeck coefficient (S), we calculated the figure of merit (ZT) at different room temperatures. The main findings of our research were the increased ZT of MoS2, which is slightly larger than p-type Si while, 2∼3 times larger than ZnO and 100∼103 times larger than conventionally used SiGe and n-type Si at room temperatures. We have further investigated a thermoelectric generator (TEG) device with these materials to validate our result.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127709313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117264
Akshay Moudgil, Neeti Kalyani, Samaresh Das, P. Mishra
Resistive switching memory devices is a promising candidate for next generation data storage. The use of nontoxic and natural available biomaterials are prospective building block for environment friendly, biocompatible and biodegradable electronic devices. The fabrication and characterization of protein based Al/Azurin/ITO/PET flexible memory device is presented here. We observed significant bistable resistive switching behavior with long retention time and very good stability under bending stress at room temperature. The memory behavior originates due to the redox pair formation in the azurin, which corresponds to the low and high resistive states. This demonstration implies that the azurin protein is an active and useful biomaterial for nonvolatile memory and sustainable bioelectronics applications.
{"title":"Azurin based flexible device for resistive switching memory application","authors":"Akshay Moudgil, Neeti Kalyani, Samaresh Das, P. Mishra","doi":"10.1109/NANO.2017.8117264","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117264","url":null,"abstract":"Resistive switching memory devices is a promising candidate for next generation data storage. The use of nontoxic and natural available biomaterials are prospective building block for environment friendly, biocompatible and biodegradable electronic devices. The fabrication and characterization of protein based Al/Azurin/ITO/PET flexible memory device is presented here. We observed significant bistable resistive switching behavior with long retention time and very good stability under bending stress at room temperature. The memory behavior originates due to the redox pair formation in the azurin, which corresponds to the low and high resistive states. This demonstration implies that the azurin protein is an active and useful biomaterial for nonvolatile memory and sustainable bioelectronics applications.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"243 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120866174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117259
Zihan Zhang, Chunhong Chen
Single-electron-transistor (SET)/MOS hybrid architectures greatly simplify the design of traditional A/D converters, but are quite unreliable due to random background charges. We propose a method of implementing Boltzmann machine networks on hybrid ADCs for the improved immunity against background charges. The self-regulation with Boltzmann machines enables the digital outputs of ADC to converge to a stable state when a simulated annealing process is applied. Simulation results with a 3-bit ADC are provided to show the effectiveness of the proposed structure. A possible structure for the higher resolution of ADCs is also presented.
{"title":"Improving the immunity of SET/MOS hybrid A/D converters using Boltzmann machine networks","authors":"Zihan Zhang, Chunhong Chen","doi":"10.1109/NANO.2017.8117259","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117259","url":null,"abstract":"Single-electron-transistor (SET)/MOS hybrid architectures greatly simplify the design of traditional A/D converters, but are quite unreliable due to random background charges. We propose a method of implementing Boltzmann machine networks on hybrid ADCs for the improved immunity against background charges. The self-regulation with Boltzmann machines enables the digital outputs of ADC to converge to a stable state when a simulated annealing process is applied. Simulation results with a 3-bit ADC are provided to show the effectiveness of the proposed structure. A possible structure for the higher resolution of ADCs is also presented.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131286890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117479
Kailey Shara, Y. Choi, Yongkun Sui, C. Zorman
This paper reports the development of electrically conductive, polymer nanofibers fabricated by electrospinning and electroless copper plating. The electrospun nanofibers were made using a precursor consisting of styrene-isoprene-styrene (SIS) block copolymer and silver trifluoroacetate. For process development and materials characterization, the fibers were electrospun as a thin membrane on glass slides. After electrospinning, each sample was exposed to an argon plasma in order to stimulate the formation of Ag metal within the fibers. Using Ag as a catalyst, copper coatings were formed on the fibers by electroless plating. It was found that high quality copper could readily form on the polymer nanofibers, rendering the originally highly resistive nanofiber membranes electrically conductive while simultaneously optically translucent. To characterize the electrical behavior of the plated fibers under mechanical load, samples were electrospun on a solid, elastic SIS thick film, plasma treated, electroless plated and subjected to elongation. One sample maintained measurable resistances for elongations of up to 167% of its unstretched value.
{"title":"Electrically conductive, polymer nanofibers fabricated by electrospinning and electroless copper plating","authors":"Kailey Shara, Y. Choi, Yongkun Sui, C. Zorman","doi":"10.1109/NANO.2017.8117479","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117479","url":null,"abstract":"This paper reports the development of electrically conductive, polymer nanofibers fabricated by electrospinning and electroless copper plating. The electrospun nanofibers were made using a precursor consisting of styrene-isoprene-styrene (SIS) block copolymer and silver trifluoroacetate. For process development and materials characterization, the fibers were electrospun as a thin membrane on glass slides. After electrospinning, each sample was exposed to an argon plasma in order to stimulate the formation of Ag metal within the fibers. Using Ag as a catalyst, copper coatings were formed on the fibers by electroless plating. It was found that high quality copper could readily form on the polymer nanofibers, rendering the originally highly resistive nanofiber membranes electrically conductive while simultaneously optically translucent. To characterize the electrical behavior of the plated fibers under mechanical load, samples were electrospun on a solid, elastic SIS thick film, plasma treated, electroless plated and subjected to elongation. One sample maintained measurable resistances for elongations of up to 167% of its unstretched value.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121374095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117322
Ning Yu, Qing Shi, M. Nakajima, Huaping Wang, Zhan Yang, Qiang Huang, T. Fukuda
Field-effect transistors (FETs) have been developed from silicon based to carbon nanotubes (CNTs) based, and the fabrication space became three-dimensionl (3D). Such fabrication process requires to accurately assemble a single CNT in 3D. However, most of the current assembly technologies were used for planar structures but not for 3D structures. In this study, we aim to use nanomanipulation based on a scanning electron microscopy (SEM) to realize the 3D assembly. To achieve this goal, we first proposed a novel 3D structure named Tri-gate CNT-FET. The Tri-gate CNT-FET has three cuboid micro-electrodes and it is wrapped by CNTs with front, top and back sides. After fabrication of the electrodes, a single CNT was picked up by an Au-coated probe and placed on the front side of the three micro-electrodes by suspending over a substrate to a certain height. The CNT pick-up and placement highly depended on attractive interactions at a CNT-metal contact interface by van der Waals force. Electron beam induced deposition (EBID) technique was then used to deposit Tungsten at the interface to fix CNT. Mechanical cutting was finally carried out to release the probe from the assembled structure. The whole assembly was achieved by using only one nanomanipulator. Experiment results validated our proposed 3D assembly method for the fabrication of Tri-gate CNT-FET.
{"title":"Nanomanipulation of a single carbon nanotube for the fabrication of a field-effect transistor","authors":"Ning Yu, Qing Shi, M. Nakajima, Huaping Wang, Zhan Yang, Qiang Huang, T. Fukuda","doi":"10.1109/NANO.2017.8117322","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117322","url":null,"abstract":"Field-effect transistors (FETs) have been developed from silicon based to carbon nanotubes (CNTs) based, and the fabrication space became three-dimensionl (3D). Such fabrication process requires to accurately assemble a single CNT in 3D. However, most of the current assembly technologies were used for planar structures but not for 3D structures. In this study, we aim to use nanomanipulation based on a scanning electron microscopy (SEM) to realize the 3D assembly. To achieve this goal, we first proposed a novel 3D structure named Tri-gate CNT-FET. The Tri-gate CNT-FET has three cuboid micro-electrodes and it is wrapped by CNTs with front, top and back sides. After fabrication of the electrodes, a single CNT was picked up by an Au-coated probe and placed on the front side of the three micro-electrodes by suspending over a substrate to a certain height. The CNT pick-up and placement highly depended on attractive interactions at a CNT-metal contact interface by van der Waals force. Electron beam induced deposition (EBID) technique was then used to deposit Tungsten at the interface to fix CNT. Mechanical cutting was finally carried out to release the probe from the assembled structure. The whole assembly was achieved by using only one nanomanipulator. Experiment results validated our proposed 3D assembly method for the fabrication of Tri-gate CNT-FET.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129101292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117333
Q. Gao, Guangfu Wu, K. Lai
Atomic force microscope (AFM) is a useful apparatus for measuring interaction forces between an AFM tip and samples at nanoscale. These forces can be classified into a normal force and a lateral force based on the deformation of AFM cantilever. The reliability of the measurement result is influenced by calibrating the spring constant of the AFM probe directly. However, it is still a challenge to quantitative lateral force because current calibration of lateral signal is complicated. Here, we present a simple experimental procedure to calculate a calibration factor of lateral force of a cantilever, and the method can be applied to most commercial AFM probes with rectangular cantilever.
{"title":"Calibration of lateral force of AFM measurement","authors":"Q. Gao, Guangfu Wu, K. Lai","doi":"10.1109/NANO.2017.8117333","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117333","url":null,"abstract":"Atomic force microscope (AFM) is a useful apparatus for measuring interaction forces between an AFM tip and samples at nanoscale. These forces can be classified into a normal force and a lateral force based on the deformation of AFM cantilever. The reliability of the measurement result is influenced by calibrating the spring constant of the AFM probe directly. However, it is still a challenge to quantitative lateral force because current calibration of lateral signal is complicated. Here, we present a simple experimental procedure to calculate a calibration factor of lateral force of a cantilever, and the method can be applied to most commercial AFM probes with rectangular cantilever.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116036455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117474
S. Ganguly, Yunkun Xie, Avik W. Ghosh
STT-RAMs show the promise to be the universal memory device with applications in embedded devices. There are outstanding challenges that need to be addressed before a wide-scale adoption of this technology happens. The solution to these challenges lie in integration of emerging high performance spintronic materials as well as clever circuit based techniques to operate these devices at their peak performance. In this work we present a material-device-circuit co-design framework that connects the properties of materials and transport physics to circuits and systems performance. To illustrate the use of this framework we study present and next generation STT-RAM technology in terms of energy-delay-reliability performance metrics and suggest possible directions for future generation devices.
{"title":"Energy-delay-reliability of present and next generation STT-RAM technology","authors":"S. Ganguly, Yunkun Xie, Avik W. Ghosh","doi":"10.1109/NANO.2017.8117474","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117474","url":null,"abstract":"STT-RAMs show the promise to be the universal memory device with applications in embedded devices. There are outstanding challenges that need to be addressed before a wide-scale adoption of this technology happens. The solution to these challenges lie in integration of emerging high performance spintronic materials as well as clever circuit based techniques to operate these devices at their peak performance. In this work we present a material-device-circuit co-design framework that connects the properties of materials and transport physics to circuits and systems performance. To illustrate the use of this framework we study present and next generation STT-RAM technology in terms of energy-delay-reliability performance metrics and suggest possible directions for future generation devices.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127243956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117412
J. Niu, P. Rasmussen
Understanding the behavior and fate of engineered nanomaterials (ENMs) released to the environment requires measurement of their physicochemical properties in relevant media. Specialized instrumentation is required to be able to detect their changes in physicochemical characteristics (such as agglomeration and dissolution) as ENMs move from the manufactured state to the exposure pathway and ultimately interact with biological systems. This study combined electrospray with dynamic mobility analysis (ES-DMA) for characterizing ENMs in dispersions. The capability of this approach to measure different size ranges of silica, gold, silver and cerium dioxide nanoparticles in dispersions was evaluated. The proposed approach was found to be capable of accurately characterizing nanoparticle size and size distributions in monomodal, polymodal and polydispersed samples. The capability of ES-DMA to resolve polymodal nanoparticle size distributions over a wide size range (from 6 to 217 nm) in a single run facilitates the detection of aggregation/agglomeration processes. Results obtained using ES-DMA were compared with those using single particle inductively-coupled plasma mass spectrometry (SP-ICP-MS). Measurements of particle size and size distribution obtained using ES-DMA compared well with reference values and with results obtained using SP-ICP-MS, showing that this technique is capable of reliable characterization of dispersed ENMs.
{"title":"Electrospray-dynamic mobility analysis for characterization of engineered nanomaterials in aqueous samples","authors":"J. Niu, P. Rasmussen","doi":"10.1109/NANO.2017.8117412","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117412","url":null,"abstract":"Understanding the behavior and fate of engineered nanomaterials (ENMs) released to the environment requires measurement of their physicochemical properties in relevant media. Specialized instrumentation is required to be able to detect their changes in physicochemical characteristics (such as agglomeration and dissolution) as ENMs move from the manufactured state to the exposure pathway and ultimately interact with biological systems. This study combined electrospray with dynamic mobility analysis (ES-DMA) for characterizing ENMs in dispersions. The capability of this approach to measure different size ranges of silica, gold, silver and cerium dioxide nanoparticles in dispersions was evaluated. The proposed approach was found to be capable of accurately characterizing nanoparticle size and size distributions in monomodal, polymodal and polydispersed samples. The capability of ES-DMA to resolve polymodal nanoparticle size distributions over a wide size range (from 6 to 217 nm) in a single run facilitates the detection of aggregation/agglomeration processes. Results obtained using ES-DMA were compared with those using single particle inductively-coupled plasma mass spectrometry (SP-ICP-MS). Measurements of particle size and size distribution obtained using ES-DMA compared well with reference values and with results obtained using SP-ICP-MS, showing that this technique is capable of reliable characterization of dispersed ENMs.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127538626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a multifunctional nanotransfer printing (nTP) method based on a simple stick-and-peel procedure that allows fast production of multiple optical nanodevices using Scotch tape. In addition to the capabilities of forming single- and multi-layer nanopatterned films on a tape, the present technique facilitates the transfer of nanostructures onto unconventional substrates (such as cleaved fiber facets and curved fiber sides) and fabrication of more complex optical devices, including Fabry-Perot cavities. Moreover, our stick-and-peel method can be applicable to various metallic and dielectric structures, including metamaterials with the feature size below 100 nm and TiO2 nanopatterned films.
{"title":"Tape-based flexible metallic and dielectric nanophotonic devices and metamaterials","authors":"Qiugu Wang, Weikun Han, Yifei Wang, Meng Lu, Liang Dong","doi":"10.1109/NANO.2017.8117339","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117339","url":null,"abstract":"This paper presents a multifunctional nanotransfer printing (nTP) method based on a simple stick-and-peel procedure that allows fast production of multiple optical nanodevices using Scotch tape. In addition to the capabilities of forming single- and multi-layer nanopatterned films on a tape, the present technique facilitates the transfer of nanostructures onto unconventional substrates (such as cleaved fiber facets and curved fiber sides) and fabrication of more complex optical devices, including Fabry-Perot cavities. Moreover, our stick-and-peel method can be applicable to various metallic and dielectric structures, including metamaterials with the feature size below 100 nm and TiO2 nanopatterned films.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126917905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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