Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117473
Zhiqiang Liao, Yubo Gao, Yanyan Deng, Chunhui Du, Shuo Zhang, Q.P. Lin, M. Zhang
A concept of tuning the on-current for p-type carbon nanotube thin film transistors (CNT TFTs) by SiO2 passivation layer has been proposed, which meets the different current density requirement for macroelectronic applications. The adsorbed oxygen molecules shift the fermi level down towards valence band, which decreases the barrier height between CNTs and electrodes for holes, so that an as-made CNT TFT with titanium or gold electrode exhibits dominant p-type conduction behavior although the intrinsic behavior of carbon nanotube (CNT) is bipolar. In order to tune the on-current of the p-type CNT TFTs, annealing process in high temperature and SiO2 passivation layer by Plasma Enhanced Chemical Vapor Deposition are used to desorb and prevent oxygen molecules from adsorbing onto the channel again. The methods for forming passivation layer are industry-compatible. Important factors affecting the tuning performance include the thickness and the length of the channel layer are studied in this paper. Besides, the mechanism of the tuning process is disclosed. We found the on-current tuning effect by SiO2 passivation layer is more significant for CNT TFTs with longer channel length than those with shorter channel length. Moreover, a positive correlation between the tuning efficiency and the thickness of passivation layer is concluded from experiments.
{"title":"On-current tunable carbon nanotube thin-film transistor by SiO2 passivation layer","authors":"Zhiqiang Liao, Yubo Gao, Yanyan Deng, Chunhui Du, Shuo Zhang, Q.P. Lin, M. Zhang","doi":"10.1109/NANO.2017.8117473","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117473","url":null,"abstract":"A concept of tuning the on-current for p-type carbon nanotube thin film transistors (CNT TFTs) by SiO2 passivation layer has been proposed, which meets the different current density requirement for macroelectronic applications. The adsorbed oxygen molecules shift the fermi level down towards valence band, which decreases the barrier height between CNTs and electrodes for holes, so that an as-made CNT TFT with titanium or gold electrode exhibits dominant p-type conduction behavior although the intrinsic behavior of carbon nanotube (CNT) is bipolar. In order to tune the on-current of the p-type CNT TFTs, annealing process in high temperature and SiO2 passivation layer by Plasma Enhanced Chemical Vapor Deposition are used to desorb and prevent oxygen molecules from adsorbing onto the channel again. The methods for forming passivation layer are industry-compatible. Important factors affecting the tuning performance include the thickness and the length of the channel layer are studied in this paper. Besides, the mechanism of the tuning process is disclosed. We found the on-current tuning effect by SiO2 passivation layer is more significant for CNT TFTs with longer channel length than those with shorter channel length. Moreover, a positive correlation between the tuning efficiency and the thickness of passivation layer is concluded from experiments.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125125897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117395
A. Abburi, Visweswara Rao Abburi
The objective of this study was to demonstrate a proof of concept for a technology platform which could produce engineered hydroxyapatite nanoparticles with respect to size, shape and morphology with ease and adapt it to a continuous production line. The conventional processes that are used in the production of hydroxyapatite are not only cumbersome but also expensive since the precursors are of high cost. It appears that none of the processes are capable of producing materials with different size, shape, porosity and more importantly the surface charge which is a very important characteristic for materials particularly used in medical applications. This paper shows that a single process line could eventually produce a designed nano product. The experiments were limited to producing Hydroxyapatite using inexpensive starting materials and simple unit operations. The results obtained demonstrate that nano Hydroxyapatite could be produced with variations in size, morphology and surface charge with the same experimental set up by changing several variables in the process conditions. Hydroxyapatite nanoparticles of varying crystal size, in different shapes such as needles, flakes and rhombic, surface charge from negative to positive were obtained in the same set up. The results demonstrated that by changing the conditions, it is possible to seamlessly vary the characteristic of nanomaterials. Bulk and continuous process line makes the process platform amenable for economical production.
{"title":"Surfactant-assisted synthesis and characterization of hydroxyapatite nanoparticles","authors":"A. Abburi, Visweswara Rao Abburi","doi":"10.1109/NANO.2017.8117395","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117395","url":null,"abstract":"The objective of this study was to demonstrate a proof of concept for a technology platform which could produce engineered hydroxyapatite nanoparticles with respect to size, shape and morphology with ease and adapt it to a continuous production line. The conventional processes that are used in the production of hydroxyapatite are not only cumbersome but also expensive since the precursors are of high cost. It appears that none of the processes are capable of producing materials with different size, shape, porosity and more importantly the surface charge which is a very important characteristic for materials particularly used in medical applications. This paper shows that a single process line could eventually produce a designed nano product. The experiments were limited to producing Hydroxyapatite using inexpensive starting materials and simple unit operations. The results obtained demonstrate that nano Hydroxyapatite could be produced with variations in size, morphology and surface charge with the same experimental set up by changing several variables in the process conditions. Hydroxyapatite nanoparticles of varying crystal size, in different shapes such as needles, flakes and rhombic, surface charge from negative to positive were obtained in the same set up. The results demonstrated that by changing the conditions, it is possible to seamlessly vary the characteristic of nanomaterials. Bulk and continuous process line makes the process platform amenable for economical production.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"8 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134389778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117459
Hongyu An, Zhen Zhou, Yang Yi
3D integration technology offers a near term strategy for bypassing Moore's Law. Applying 3D integration to neuromorphic computing (NC) could provide a low power consumption, high-connectivity, and massively parallel processed system that can accommodate high demand computational tasks. This paper proposes a novel analog spiking nanoscale 3D NC system, wherein both neurons and synapses are stacked three-dimensionally, with monolithic inter-tier via (MIV) technology, and vertical resistive random-access memory (V-RRAM) structures. An application of the proposed system to associative memory learning is performed to demonstrate its capability in high demand computational tasks. The computational efficiency and performance improvement of the proposed architecture are demonstrated.
{"title":"Memristor-based 3D neuromorphic computing system and its application to associative memory learning","authors":"Hongyu An, Zhen Zhou, Yang Yi","doi":"10.1109/NANO.2017.8117459","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117459","url":null,"abstract":"3D integration technology offers a near term strategy for bypassing Moore's Law. Applying 3D integration to neuromorphic computing (NC) could provide a low power consumption, high-connectivity, and massively parallel processed system that can accommodate high demand computational tasks. This paper proposes a novel analog spiking nanoscale 3D NC system, wherein both neurons and synapses are stacked three-dimensionally, with monolithic inter-tier via (MIV) technology, and vertical resistive random-access memory (V-RRAM) structures. An application of the proposed system to associative memory learning is performed to demonstrate its capability in high demand computational tasks. The computational efficiency and performance improvement of the proposed architecture are demonstrated.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134593347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117288
Yubo Gao, Yanyan Deng, Zhiqiang Liao, M. Zhang
The superb advantages of carbon nanotubes (CNTs) cannot be exhibited completely by devices using random CNT networks as channel materials due to the large tube-to-tube contact resistance. Traditional Langmuir-Blodgett (LB) method with direct compression and dipping has little performance improvement for films due to defects of CNT orientation. Here an improved LB method with gradually increased surface pressure scheme has been proposed to fabricate aligned carbon nanotube field effect transistor (CNFET). Comparing the CNFETs with aligned CNT channel by LB method and the carbon nanotube thin film transistors (CNT-TFTs) with network CNT channel by spin-coating method, the device mobility increases from 2.044 cm 2/ (Vs) to 30.81 cm2/ (Vs). In addition, the CNFET shows a higher on-state current and a lower subthreshold swing. The performance improvement for the aligned CNTs by multiple compression and expansion cycling of the LB method is an important foundation for future development of CNT-based devices, especially flexible devices.
{"title":"Aligned carbon nanotube field effect transistors by repeated compression-expansion cycles in Langmuir-Blodgett","authors":"Yubo Gao, Yanyan Deng, Zhiqiang Liao, M. Zhang","doi":"10.1109/NANO.2017.8117288","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117288","url":null,"abstract":"The superb advantages of carbon nanotubes (CNTs) cannot be exhibited completely by devices using random CNT networks as channel materials due to the large tube-to-tube contact resistance. Traditional Langmuir-Blodgett (LB) method with direct compression and dipping has little performance improvement for films due to defects of CNT orientation. Here an improved LB method with gradually increased surface pressure scheme has been proposed to fabricate aligned carbon nanotube field effect transistor (CNFET). Comparing the CNFETs with aligned CNT channel by LB method and the carbon nanotube thin film transistors (CNT-TFTs) with network CNT channel by spin-coating method, the device mobility increases from 2.044 cm 2/ (Vs) to 30.81 cm2/ (Vs). In addition, the CNFET shows a higher on-state current and a lower subthreshold swing. The performance improvement for the aligned CNTs by multiple compression and expansion cycling of the LB method is an important foundation for future development of CNT-based devices, especially flexible devices.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"6 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132273781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117312
Jiayu Ye, Zhongyi Chu, Jing Cui
Gecko-inspired adhesive pads have a wide range of application with their characteristics of low preload, strong adhesion and easy detachment. However, the appearance of adhesive force needs adhesive pads with a micro-scale displacement to engage. Therefore, the microstroke table must be designed. In order to have a better adaptability for several surface structures, it is necessary to optimize the microstroke table. In this paper, the relationship between the model of the microstroke table and three kinds of surface structures has been presented. On this basis, key parameters of the model has been optimized by the Sequential Quadratic Programming (SQP) method. With the optimized parameters, the microstroke table can have a better adaptability for different kinds of surface structures and improve the efficiency of the driving energy.
{"title":"Optimization design of microstroke table for gecko adhesives actuating","authors":"Jiayu Ye, Zhongyi Chu, Jing Cui","doi":"10.1109/NANO.2017.8117312","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117312","url":null,"abstract":"Gecko-inspired adhesive pads have a wide range of application with their characteristics of low preload, strong adhesion and easy detachment. However, the appearance of adhesive force needs adhesive pads with a micro-scale displacement to engage. Therefore, the microstroke table must be designed. In order to have a better adaptability for several surface structures, it is necessary to optimize the microstroke table. In this paper, the relationship between the model of the microstroke table and three kinds of surface structures has been presented. On this basis, key parameters of the model has been optimized by the Sequential Quadratic Programming (SQP) method. With the optimized parameters, the microstroke table can have a better adaptability for different kinds of surface structures and improve the efficiency of the driving energy.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133049537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117316
D. H. Emon, H. Kim
We report a quantum-dot (QD) organic light-emitting diode (OLED) structure formed on Si substrate scaled down to nanometer dimensions. In our proposed OLED, the junction area is defined by a non-lithographically patterned oxide layer on Si substrate. We utilized gold nanoparticles as oxygen barrier mask during thermal oxidation of Si. Previously, we demonstrated a carrier injection mechanism originating from the two-dimensional electron gas (2DEG) system available at the SiO2/Si interface [4]. The electron injection, as well as the resulting luminescence, is found to occur predominantly at the junction's periphery, not area, resulting in a low turn-on voltage (∼1–2 V). An efficient way to increase total device perimeter is to reduce the size of the device. In this report, we demonstrated a cost-effective non-lithographic method to fabricate nanoscale OLEDs with a dense distribution to increase total device perimeter without requiring extra substrate area.
{"title":"Fabrication of nanoscale quantum-dot organic light-emitting devices on Si substrate","authors":"D. H. Emon, H. Kim","doi":"10.1109/NANO.2017.8117316","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117316","url":null,"abstract":"We report a quantum-dot (QD) organic light-emitting diode (OLED) structure formed on Si substrate scaled down to nanometer dimensions. In our proposed OLED, the junction area is defined by a non-lithographically patterned oxide layer on Si substrate. We utilized gold nanoparticles as oxygen barrier mask during thermal oxidation of Si. Previously, we demonstrated a carrier injection mechanism originating from the two-dimensional electron gas (2DEG) system available at the SiO2/Si interface [4]. The electron injection, as well as the resulting luminescence, is found to occur predominantly at the junction's periphery, not area, resulting in a low turn-on voltage (∼1–2 V). An efficient way to increase total device perimeter is to reduce the size of the device. In this report, we demonstrated a cost-effective non-lithographic method to fabricate nanoscale OLEDs with a dense distribution to increase total device perimeter without requiring extra substrate area.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132735103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117500
Sungho Kim, Ece Isenbike Ozalp, M. Darwish, J. Weldon
We propose a high throughput electrically activated reconfigurable nanofluidic diode structure where the application of a gate voltage can regulate the behavior of the nanofluidic diode. The proposed device is easy to fabricate and offers control over the forward and reverse bias of the nanofluidic diode. 10 nm of Cr is sputter deposited on a free standing anodic aluminum oxide membrane with a pore diameter of 40 nm and a thickness of 50 μm. The surface charge density and polarity at the surface of chromium can be manipulated by the gate voltage applied at the Cr side. Our results show that our device acts as a nanofluidic diode and can be used for controllable molecular separation, chemical sensing and biosensing.
{"title":"Electrically activated nanofluidic diodes","authors":"Sungho Kim, Ece Isenbike Ozalp, M. Darwish, J. Weldon","doi":"10.1109/NANO.2017.8117500","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117500","url":null,"abstract":"We propose a high throughput electrically activated reconfigurable nanofluidic diode structure where the application of a gate voltage can regulate the behavior of the nanofluidic diode. The proposed device is easy to fabricate and offers control over the forward and reverse bias of the nanofluidic diode. 10 nm of Cr is sputter deposited on a free standing anodic aluminum oxide membrane with a pore diameter of 40 nm and a thickness of 50 μm. The surface charge density and polarity at the surface of chromium can be manipulated by the gate voltage applied at the Cr side. Our results show that our device acts as a nanofluidic diode and can be used for controllable molecular separation, chemical sensing and biosensing.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132825450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117271
Keith D. Weiss, L. G. Almeda
Identifying the technology trends, key patents to be aware of, the key players active in the field, the product areas that are heavily patented or scarcely addressed, and the focus of a company's competitors represent crucial aspects of developing a successful strategic plan, determining a company's freedom to make and sell their product, and focusing future research & product development efforts. These areas of concern may be addressed by the creation and analysis of a patent landscape associated with the technology behind a company's product. A process for creating and analyzing a patent landscape is provided using the area of nanomaterials as a case study.
{"title":"Competitive intelligence — Understanding current trends in the patent landscape for nanomaterials","authors":"Keith D. Weiss, L. G. Almeda","doi":"10.1109/NANO.2017.8117271","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117271","url":null,"abstract":"Identifying the technology trends, key patents to be aware of, the key players active in the field, the product areas that are heavily patented or scarcely addressed, and the focus of a company's competitors represent crucial aspects of developing a successful strategic plan, determining a company's freedom to make and sell their product, and focusing future research & product development efforts. These areas of concern may be addressed by the creation and analysis of a patent landscape associated with the technology behind a company's product. A process for creating and analyzing a patent landscape is provided using the area of nanomaterials as a case study.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115315271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Amplitude calibration of the quartz tuning fork (QTF) sensor includes the measurement of the sensitivity factor (αTF). We propose, AFM based methods (cantilever tracking and z-servo tracking of the QTF's amplitude of vibration) to determine the sensitivity factor of the QTF. The QTF is mounted on a xyz-scanner of the AFM and a soft AFM probe is approached on the apex of a tine of the QTF by driving the z-servo and using the normal deflection voltage (Vtb) of position sensitive detector (PSD) as feedback signal. Once the tip contacts the tine, servo is switched off. QTF is electrically excited with a sinusoidal signal from OC4 (Nanonis) and amplitude of the QTF's output at transimpedance amplifier (Vtf) and amplitude of VTB (Vp) is measured by individual lock-in amplifiers which are internally synchronized to the phase of the excitation signal of the QTF. Before, the measurements optical lever is calibrated. By relating the both voltages (Vp & Vtf), sensitivity factor of the QTF (αTF) is determined. In the second approach, after the tip contacts the tine, the z-servo is switched off firstly, then the feedback signal is switched to Vp and frequency sweep for the QTF, Vtb as well as z-servo are started, instantaneously. To keep the Vp at set-point the feedback control moves the z-servo to track the vibration amplitude of the QTF and thus the distance traveled by the z-servo (Δζ) during sweep is equal to the fork's amplitude of vibration (ΔxTF). αtf is determined by relating Δz and VTF. Both approaches can be non-destructively applied for QTF sensor calibration. AFM imaging of the AFM calibration grating TGZ1 (from NT-MDT Russia) has been performed with a calibrated QTF sensor.
{"title":"Amplitude calibration of quartz tuning fork (QTF) force sensor with an atomic force microscope","authors":"Danish Hussain, Hao Zhang, Jianmin Song, Wen Yongbing, Xianghe Meng, F. Xinjian, Hui Xie","doi":"10.1109/NANO.2017.8117406","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117406","url":null,"abstract":"Amplitude calibration of the quartz tuning fork (QTF) sensor includes the measurement of the sensitivity factor (αTF). We propose, AFM based methods (cantilever tracking and z-servo tracking of the QTF's amplitude of vibration) to determine the sensitivity factor of the QTF. The QTF is mounted on a xyz-scanner of the AFM and a soft AFM probe is approached on the apex of a tine of the QTF by driving the z-servo and using the normal deflection voltage (Vtb) of position sensitive detector (PSD) as feedback signal. Once the tip contacts the tine, servo is switched off. QTF is electrically excited with a sinusoidal signal from OC4 (Nanonis) and amplitude of the QTF's output at transimpedance amplifier (Vtf) and amplitude of VTB (Vp) is measured by individual lock-in amplifiers which are internally synchronized to the phase of the excitation signal of the QTF. Before, the measurements optical lever is calibrated. By relating the both voltages (Vp & Vtf), sensitivity factor of the QTF (αTF) is determined. In the second approach, after the tip contacts the tine, the z-servo is switched off firstly, then the feedback signal is switched to Vp and frequency sweep for the QTF, Vtb as well as z-servo are started, instantaneously. To keep the Vp at set-point the feedback control moves the z-servo to track the vibration amplitude of the QTF and thus the distance traveled by the z-servo (Δζ) during sweep is equal to the fork's amplitude of vibration (ΔxTF). αtf is determined by relating Δz and VTF. Both approaches can be non-destructively applied for QTF sensor calibration. AFM imaging of the AFM calibration grating TGZ1 (from NT-MDT Russia) has been performed with a calibrated QTF sensor.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115373609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117461
Ayesha Shaukat, R. Umer, N. Islam
This paper demonstrates the performance of Carbon Nanotube Field Effect Transistor (CNTFET) in ballistic regime. It shows the effect of dielectric material and oxide thickness on different performance parameters of device like Carrier Injection Velocity (vinj), Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS), Transconductance (gm), Output Conductance (gd) and Voltage Gain (Av). The results illustrate that although Silicon dioxide (SiO2) has lowest SS, but still it cannot be used as a dielectric medium in CNTFETs due to high DIBL, lower gm, gd and Av. On the other hand, Zarconium Oxide (ZrO2), Hafnium Oxide (HfO2) and Titanium oxide (TiO2) seem to be better options for dielectric medium of the device. The impact of the said changes is also observed and analyzed in I-V characteristics of the device.
{"title":"Impact of dielectric material and oxide thickness on the performance of Carbon Nanotube Field Effect Transistor","authors":"Ayesha Shaukat, R. Umer, N. Islam","doi":"10.1109/NANO.2017.8117461","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117461","url":null,"abstract":"This paper demonstrates the performance of Carbon Nanotube Field Effect Transistor (CNTFET) in ballistic regime. It shows the effect of dielectric material and oxide thickness on different performance parameters of device like Carrier Injection Velocity (v<inf>inj</inf>), Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS), Transconductance (g<inf>m</inf>), Output Conductance (g<inf>d</inf>) and Voltage Gain (Av). The results illustrate that although Silicon dioxide (SiO<inf>2</inf>) has lowest SS, but still it cannot be used as a dielectric medium in CNTFETs due to high DIBL, lower g<inf>m</inf>, g<inf>d</inf> and Av. On the other hand, Zarconium Oxide (ZrO<inf>2</inf>), Hafnium Oxide (HfO<inf>2</inf>) and Titanium oxide (TiO<inf>2</inf>) seem to be better options for dielectric medium of the device. The impact of the said changes is also observed and analyzed in I-V characteristics of the device.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123327570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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