Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117471
A. Khan
Food supply and food safety are the key global public health issues, and are particularly important in heavily populated countries. Rapid industrialization and modernization in the developing world are having profound effects on food supply and food safety. In the age of globalization, the makeup of the international food industry is constantly transforming. Global food retail sales stand at about $4 trillion annually [1]. Globalization of the food supply has also introduced new food-safety risks, and the previously controlled risks now can be introduced into countries, and the contaminated food can be spread across wider geographic areas. Moreover, food-safety concerns may reduce the demand for certain food products, change international food trade patterns, and limit market access for some exporters [2].
{"title":"Nanotechnology applications in food and agriculture","authors":"A. Khan","doi":"10.1109/NANO.2017.8117471","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117471","url":null,"abstract":"Food supply and food safety are the key global public health issues, and are particularly important in heavily populated countries. Rapid industrialization and modernization in the developing world are having profound effects on food supply and food safety. In the age of globalization, the makeup of the international food industry is constantly transforming. Global food retail sales stand at about $4 trillion annually [1]. Globalization of the food supply has also introduced new food-safety risks, and the previously controlled risks now can be introduced into countries, and the contaminated food can be spread across wider geographic areas. Moreover, food-safety concerns may reduce the demand for certain food products, change international food trade patterns, and limit market access for some exporters [2].","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127667724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117466
Bruce C. Kim, Anurag Gupta
This paper describes two unique device topologies: single ZnO nanowire and array ZnO nanowire-based devices. Two device topologies have been fabricated and compared for their sensing performance. The single nanowire device has been fabricated through focused ion beam and e-beam lithography techniques while the SEM and EDAX analysis have been used to characterize the device. The IV characteristics of the ZnO nanowire-based array devices have been measured through a semiconductor parameter analyzer.
{"title":"Device synthesis topology for zinc oxide nanowire sensors","authors":"Bruce C. Kim, Anurag Gupta","doi":"10.1109/NANO.2017.8117466","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117466","url":null,"abstract":"This paper describes two unique device topologies: single ZnO nanowire and array ZnO nanowire-based devices. Two device topologies have been fabricated and compared for their sensing performance. The single nanowire device has been fabricated through focused ion beam and e-beam lithography techniques while the SEM and EDAX analysis have been used to characterize the device. The IV characteristics of the ZnO nanowire-based array devices have been measured through a semiconductor parameter analyzer.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127669697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117264
Akshay Moudgil, Neeti Kalyani, Samaresh Das, P. Mishra
Resistive switching memory devices is a promising candidate for next generation data storage. The use of nontoxic and natural available biomaterials are prospective building block for environment friendly, biocompatible and biodegradable electronic devices. The fabrication and characterization of protein based Al/Azurin/ITO/PET flexible memory device is presented here. We observed significant bistable resistive switching behavior with long retention time and very good stability under bending stress at room temperature. The memory behavior originates due to the redox pair formation in the azurin, which corresponds to the low and high resistive states. This demonstration implies that the azurin protein is an active and useful biomaterial for nonvolatile memory and sustainable bioelectronics applications.
{"title":"Azurin based flexible device for resistive switching memory application","authors":"Akshay Moudgil, Neeti Kalyani, Samaresh Das, P. Mishra","doi":"10.1109/NANO.2017.8117264","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117264","url":null,"abstract":"Resistive switching memory devices is a promising candidate for next generation data storage. The use of nontoxic and natural available biomaterials are prospective building block for environment friendly, biocompatible and biodegradable electronic devices. The fabrication and characterization of protein based Al/Azurin/ITO/PET flexible memory device is presented here. We observed significant bistable resistive switching behavior with long retention time and very good stability under bending stress at room temperature. The memory behavior originates due to the redox pair formation in the azurin, which corresponds to the low and high resistive states. This demonstration implies that the azurin protein is an active and useful biomaterial for nonvolatile memory and sustainable bioelectronics applications.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"243 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120866174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117384
Chen Wang, Yu Huang, X. Duan
Black phosphorus and monolayer phosphorene is an emerging electronic materials for next-generation nanoelectronics. Here we report the polyaniline and protonic acid surface doping of thin black phosphorus to enhance its mobility and on-current, which will define new method to optimize of phosphorene electrical properties and open new revenue to study phosphorene electronics.
{"title":"Enhanced electrical characteristics of black phosphorus by polyaniline and protonic acid surface doping","authors":"Chen Wang, Yu Huang, X. Duan","doi":"10.1109/NANO.2017.8117384","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117384","url":null,"abstract":"Black phosphorus and monolayer phosphorene is an emerging electronic materials for next-generation nanoelectronics. Here we report the polyaniline and protonic acid surface doping of thin black phosphorus to enhance its mobility and on-current, which will define new method to optimize of phosphorene electrical properties and open new revenue to study phosphorene electronics.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125921928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117430
Md. Mer Mosharraf Hossain, S. Ahmed, S. M. Shahriar, Md. S. U. Zzaman, Avijit Das, A. Saha, Md. Belal Hossain Bhuian
In this paper, we mainly focused on analyzing the thermoelectric property i.e. figure of merit of different nanostructured materials in room temperature (300–310 K). Here we studied the transition-metal dichalcogenides, particularly Molybdenum Disulfide (MoS2); Metal Oxides, specifically Zinc Oxide (ZnO); and conventional semiconductor materials, i.e. n-type and p-type Silicon (Si) and Silicon Germanium (SiGe). At first, we calculated the electrical conductance (Ge), by using electronic density functional theory (DFT). Similarly, we calculated the thermal conductance (κ) using Tersoff empirical potential (TEP) model. With these calculated values of Ge and κ and the Seebeck coefficient (S), we calculated the figure of merit (ZT) at different room temperatures. The main findings of our research were the increased ZT of MoS2, which is slightly larger than p-type Si while, 2∼3 times larger than ZnO and 100∼103 times larger than conventionally used SiGe and n-type Si at room temperatures. We have further investigated a thermoelectric generator (TEG) device with these materials to validate our result.
{"title":"Figure of merit analysis of nanostructured thermoelectric materials at room temperature","authors":"Md. Mer Mosharraf Hossain, S. Ahmed, S. M. Shahriar, Md. S. U. Zzaman, Avijit Das, A. Saha, Md. Belal Hossain Bhuian","doi":"10.1109/NANO.2017.8117430","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117430","url":null,"abstract":"In this paper, we mainly focused on analyzing the thermoelectric property i.e. figure of merit of different nanostructured materials in room temperature (300–310 K). Here we studied the transition-metal dichalcogenides, particularly Molybdenum Disulfide (MoS2); Metal Oxides, specifically Zinc Oxide (ZnO); and conventional semiconductor materials, i.e. n-type and p-type Silicon (Si) and Silicon Germanium (SiGe). At first, we calculated the electrical conductance (Ge), by using electronic density functional theory (DFT). Similarly, we calculated the thermal conductance (κ) using Tersoff empirical potential (TEP) model. With these calculated values of Ge and κ and the Seebeck coefficient (S), we calculated the figure of merit (ZT) at different room temperatures. The main findings of our research were the increased ZT of MoS2, which is slightly larger than p-type Si while, 2∼3 times larger than ZnO and 100∼103 times larger than conventionally used SiGe and n-type Si at room temperatures. We have further investigated a thermoelectric generator (TEG) device with these materials to validate our result.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127709313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117486
Yanting Liu, Yajing Shen
Gold nanoplates (NPs) were fabricated through a facile hydrothermal method with cetyltrimethylammonium chlorine (CTAC) as a surfactant agent. The morphology and size of the gold NPs could be manipulated by changing the molar ratio of ([CTAC]/[HAuCl4] during the preparation. Triangular, truncated triangular and hexagonal gold nanoplates can be obtained and the sizes of these gold NPs can be varied from a few tens of nanometers, to several hundreds of nanometers, and even a few microns in width.
{"title":"Hydrothermal synthesis of gold nanoplates with different size ranges","authors":"Yanting Liu, Yajing Shen","doi":"10.1109/NANO.2017.8117486","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117486","url":null,"abstract":"Gold nanoplates (NPs) were fabricated through a facile hydrothermal method with cetyltrimethylammonium chlorine (CTAC) as a surfactant agent. The morphology and size of the gold NPs could be manipulated by changing the molar ratio of ([CTAC]/[HAuCl4] during the preparation. Triangular, truncated triangular and hexagonal gold nanoplates can be obtained and the sizes of these gold NPs can be varied from a few tens of nanometers, to several hundreds of nanometers, and even a few microns in width.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127768963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117288
Yubo Gao, Yanyan Deng, Zhiqiang Liao, M. Zhang
The superb advantages of carbon nanotubes (CNTs) cannot be exhibited completely by devices using random CNT networks as channel materials due to the large tube-to-tube contact resistance. Traditional Langmuir-Blodgett (LB) method with direct compression and dipping has little performance improvement for films due to defects of CNT orientation. Here an improved LB method with gradually increased surface pressure scheme has been proposed to fabricate aligned carbon nanotube field effect transistor (CNFET). Comparing the CNFETs with aligned CNT channel by LB method and the carbon nanotube thin film transistors (CNT-TFTs) with network CNT channel by spin-coating method, the device mobility increases from 2.044 cm 2/ (Vs) to 30.81 cm2/ (Vs). In addition, the CNFET shows a higher on-state current and a lower subthreshold swing. The performance improvement for the aligned CNTs by multiple compression and expansion cycling of the LB method is an important foundation for future development of CNT-based devices, especially flexible devices.
{"title":"Aligned carbon nanotube field effect transistors by repeated compression-expansion cycles in Langmuir-Blodgett","authors":"Yubo Gao, Yanyan Deng, Zhiqiang Liao, M. Zhang","doi":"10.1109/NANO.2017.8117288","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117288","url":null,"abstract":"The superb advantages of carbon nanotubes (CNTs) cannot be exhibited completely by devices using random CNT networks as channel materials due to the large tube-to-tube contact resistance. Traditional Langmuir-Blodgett (LB) method with direct compression and dipping has little performance improvement for films due to defects of CNT orientation. Here an improved LB method with gradually increased surface pressure scheme has been proposed to fabricate aligned carbon nanotube field effect transistor (CNFET). Comparing the CNFETs with aligned CNT channel by LB method and the carbon nanotube thin film transistors (CNT-TFTs) with network CNT channel by spin-coating method, the device mobility increases from 2.044 cm 2/ (Vs) to 30.81 cm2/ (Vs). In addition, the CNFET shows a higher on-state current and a lower subthreshold swing. The performance improvement for the aligned CNTs by multiple compression and expansion cycling of the LB method is an important foundation for future development of CNT-based devices, especially flexible devices.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"6 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132273781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117360
Jeong-Soo Lee, Saebyuk Jeong, Donghoon Kim, Chanoh Park, R. Baek, Bo Jin
In order to detect DMMP (dimethyl methyl-phosphonate; sarin simulant), tetrafluorohydroquinone (TFQ) functionalized graphene chemiresistive sensors are successfully developed. The graphene sensors show significantly enhanced sensitivity with various DMMP concentrations. In addition, for the real-time DMMP detection, a method using the first derivative of current sensitivity will be presented.
{"title":"Improving DMMP (Salin simulant) sensing characteristics of TFQ functionalized graphene chemiresistive sensors","authors":"Jeong-Soo Lee, Saebyuk Jeong, Donghoon Kim, Chanoh Park, R. Baek, Bo Jin","doi":"10.1109/NANO.2017.8117360","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117360","url":null,"abstract":"In order to detect DMMP (dimethyl methyl-phosphonate; sarin simulant), tetrafluorohydroquinone (TFQ) functionalized graphene chemiresistive sensors are successfully developed. The graphene sensors show significantly enhanced sensitivity with various DMMP concentrations. In addition, for the real-time DMMP detection, a method using the first derivative of current sensitivity will be presented.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131229284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117316
D. H. Emon, H. Kim
We report a quantum-dot (QD) organic light-emitting diode (OLED) structure formed on Si substrate scaled down to nanometer dimensions. In our proposed OLED, the junction area is defined by a non-lithographically patterned oxide layer on Si substrate. We utilized gold nanoparticles as oxygen barrier mask during thermal oxidation of Si. Previously, we demonstrated a carrier injection mechanism originating from the two-dimensional electron gas (2DEG) system available at the SiO2/Si interface [4]. The electron injection, as well as the resulting luminescence, is found to occur predominantly at the junction's periphery, not area, resulting in a low turn-on voltage (∼1–2 V). An efficient way to increase total device perimeter is to reduce the size of the device. In this report, we demonstrated a cost-effective non-lithographic method to fabricate nanoscale OLEDs with a dense distribution to increase total device perimeter without requiring extra substrate area.
{"title":"Fabrication of nanoscale quantum-dot organic light-emitting devices on Si substrate","authors":"D. H. Emon, H. Kim","doi":"10.1109/NANO.2017.8117316","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117316","url":null,"abstract":"We report a quantum-dot (QD) organic light-emitting diode (OLED) structure formed on Si substrate scaled down to nanometer dimensions. In our proposed OLED, the junction area is defined by a non-lithographically patterned oxide layer on Si substrate. We utilized gold nanoparticles as oxygen barrier mask during thermal oxidation of Si. Previously, we demonstrated a carrier injection mechanism originating from the two-dimensional electron gas (2DEG) system available at the SiO2/Si interface [4]. The electron injection, as well as the resulting luminescence, is found to occur predominantly at the junction's periphery, not area, resulting in a low turn-on voltage (∼1–2 V). An efficient way to increase total device perimeter is to reduce the size of the device. In this report, we demonstrated a cost-effective non-lithographic method to fabricate nanoscale OLEDs with a dense distribution to increase total device perimeter without requiring extra substrate area.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132735103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-07-01DOI: 10.1109/NANO.2017.8117500
Sungho Kim, Ece Isenbike Ozalp, M. Darwish, J. Weldon
We propose a high throughput electrically activated reconfigurable nanofluidic diode structure where the application of a gate voltage can regulate the behavior of the nanofluidic diode. The proposed device is easy to fabricate and offers control over the forward and reverse bias of the nanofluidic diode. 10 nm of Cr is sputter deposited on a free standing anodic aluminum oxide membrane with a pore diameter of 40 nm and a thickness of 50 μm. The surface charge density and polarity at the surface of chromium can be manipulated by the gate voltage applied at the Cr side. Our results show that our device acts as a nanofluidic diode and can be used for controllable molecular separation, chemical sensing and biosensing.
{"title":"Electrically activated nanofluidic diodes","authors":"Sungho Kim, Ece Isenbike Ozalp, M. Darwish, J. Weldon","doi":"10.1109/NANO.2017.8117500","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117500","url":null,"abstract":"We propose a high throughput electrically activated reconfigurable nanofluidic diode structure where the application of a gate voltage can regulate the behavior of the nanofluidic diode. The proposed device is easy to fabricate and offers control over the forward and reverse bias of the nanofluidic diode. 10 nm of Cr is sputter deposited on a free standing anodic aluminum oxide membrane with a pore diameter of 40 nm and a thickness of 50 μm. The surface charge density and polarity at the surface of chromium can be manipulated by the gate voltage applied at the Cr side. Our results show that our device acts as a nanofluidic diode and can be used for controllable molecular separation, chemical sensing and biosensing.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132825450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：