The most vital requirement in today's world is to overcome the different types of attacks. Human behavioral and physiological features in biometrics have the largest scope as a solution for security issues. However, the existing biometric systems such as faces, iris, palm, voice or fingerprints are highly complex in terms of time or space or both, and thus are not suitable in high security. So the design and implementation of finger-vein authentication method is proposed in this paper. This system is implemented using a combination of image processing and machine learning algorithm. Lacunae, fractal dimension and gabor filter are the algorithms used for feature extraction and the classification of the extracted feature is done using the Support Vector Machine. The accuracy of classification algorithm for One-Versus-One and One-Versus-All is 98.75 % and 97.92 % and the execution time is 0.168 Seconds and 0.187 Seconds respectively. At the end the comparative analysis between different classification algorithm and previous research work related to Finger Vein Authentication System using Machine learning is provided.
{"title":"Design and Implementation of Gabor Filter and SVM based Authentication system using Machine Learning","authors":"Shalini Singh, Indrajit Das, Md Golam Mohiuddin, Amogh Banerjee, Sonali Gupta","doi":"10.1109/DEVIC.2019.8783650","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783650","url":null,"abstract":"The most vital requirement in today's world is to overcome the different types of attacks. Human behavioral and physiological features in biometrics have the largest scope as a solution for security issues. However, the existing biometric systems such as faces, iris, palm, voice or fingerprints are highly complex in terms of time or space or both, and thus are not suitable in high security. So the design and implementation of finger-vein authentication method is proposed in this paper. This system is implemented using a combination of image processing and machine learning algorithm. Lacunae, fractal dimension and gabor filter are the algorithms used for feature extraction and the classification of the extracted feature is done using the Support Vector Machine. The accuracy of classification algorithm for One-Versus-One and One-Versus-All is 98.75 % and 97.92 % and the execution time is 0.168 Seconds and 0.187 Seconds respectively. At the end the comparative analysis between different classification algorithm and previous research work related to Finger Vein Authentication System using Machine learning is provided.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122243049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783937
Deborsi Basu, K. Purkait
In recent days, different kinds of Cancerous tumor detection in human body using Microwave Tomography technique (MWT) is picking up huge interest of research among modern day scientists. As all other existing methods like ultrasound, mammography, magnetic resonance imaging (MRI), X - ray imaging etc. are coming up with certain difficulties to patients so Microwave imaging technique is a suitable substitute for that. In this paper, a hypothetical assumption based on the variations of complex dielectric permittivity of the water content of cells with different stages of cancer has been implemented. The complex dielectric permittivities are reconstructed with the help of suitable reconstruction techniques and images have been formed accordingly. Analysing the reconstructed values, a comparative study has been done between a normal cell and different kinds of affected cells. The new approach of this reconstruction algorithm shows a very much efficient way of discriminating all possible kinds of dielectric perturbations for various stages of cancer inside human body. Through this analysis it is shown that the improved version of reconstruction algorithm works well on the hypothetical assumption and the result found is pretty satisfactory and the margin of error is also less, based on the result it is proposed that microwave imaging technique is one of the best methods for detection of the presence cancer cell inside human body.
{"title":"A Hypothetical Analysis to Study the Variations of Complex Dielectric Permittivity for Detection of Various Stages of Cancer of a Biological Target using Microwave Tomography","authors":"Deborsi Basu, K. Purkait","doi":"10.1109/DEVIC.2019.8783937","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783937","url":null,"abstract":"In recent days, different kinds of Cancerous tumor detection in human body using Microwave Tomography technique (MWT) is picking up huge interest of research among modern day scientists. As all other existing methods like ultrasound, mammography, magnetic resonance imaging (MRI), X - ray imaging etc. are coming up with certain difficulties to patients so Microwave imaging technique is a suitable substitute for that. In this paper, a hypothetical assumption based on the variations of complex dielectric permittivity of the water content of cells with different stages of cancer has been implemented. The complex dielectric permittivities are reconstructed with the help of suitable reconstruction techniques and images have been formed accordingly. Analysing the reconstructed values, a comparative study has been done between a normal cell and different kinds of affected cells. The new approach of this reconstruction algorithm shows a very much efficient way of discriminating all possible kinds of dielectric perturbations for various stages of cancer inside human body. Through this analysis it is shown that the improved version of reconstruction algorithm works well on the hypothetical assumption and the result found is pretty satisfactory and the margin of error is also less, based on the result it is proposed that microwave imaging technique is one of the best methods for detection of the presence cancer cell inside human body.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127761845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783633
Subhamoy Banerjee, B. Pradhan
FinFET, a quasi-planar device has gained tremendous importance in the semiconductor industry because it has the ability to suppress all the short-channel effects. The silicon fin of FinFET can be of different shapes-rectangular, trapezoidal, triangular, convex, concave etc. In this paper, we have discussed subthreshold swing, threshold voltage of different fin structures and drain current based on angle of inclination, fin width and applied gate voltages. We also include change of channel capacitance of triangular fin based on different fin width. Some novel analytical formula expression for subthreshold swing has been discussed. In MATLAB, we have plotted the variation of different graphs based on different parameters of FinFETs and obtain their respective results to prove that our dimensions are superior to other values.
{"title":"Analytical Model of Subthreshold Swing in Triangular-Shaped FinFET","authors":"Subhamoy Banerjee, B. Pradhan","doi":"10.1109/DEVIC.2019.8783633","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783633","url":null,"abstract":"FinFET, a quasi-planar device has gained tremendous importance in the semiconductor industry because it has the ability to suppress all the short-channel effects. The silicon fin of FinFET can be of different shapes-rectangular, trapezoidal, triangular, convex, concave etc. In this paper, we have discussed subthreshold swing, threshold voltage of different fin structures and drain current based on angle of inclination, fin width and applied gate voltages. We also include change of channel capacitance of triangular fin based on different fin width. Some novel analytical formula expression for subthreshold swing has been discussed. In MATLAB, we have plotted the variation of different graphs based on different parameters of FinFETs and obtain their respective results to prove that our dimensions are superior to other values.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129244630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Currently Drones become a brand new issue for Grid monitoring & security. As extremely innovative Drones area unit offered at the high value. Drones are facing various analysis & physical threats. The threats that may be caused by the attacks of drone has been enhanced. Recent object detection are dramatically improved in accuracy by victimization convolution neural networks. Sometimes GPS information will become defective underneath conduits, within subways, or close to high voltage (HV) power lines, that may result in flight inaccuracies. To optimize that, we ARE emerging a drone for whole grid structure checkups. Drones essentially use Global Positioning System (GPS) for independent control & monitoring, through image processing. This article defines a way for examine smart grid victimizing drones & employing a Pan-Tilt-Zoom (PTZ) camera. With the ambition of emerging associate self-directed flight & secure power lines for better Grid Performance & sort fault clearance with decreasing human life risk.
{"title":"Survey of Smart Grid Network Using Drone & PTZ Camera","authors":"Sayan Paramanik, Partha Sarathi Sarkar, Koustav Kumar Mondol, Avijit Chakraborty, Sajib Chakraborty, K. Sarker","doi":"10.1109/DEVIC.2019.8783610","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783610","url":null,"abstract":"Currently Drones become a brand new issue for Grid monitoring & security. As extremely innovative Drones area unit offered at the high value. Drones are facing various analysis & physical threats. The threats that may be caused by the attacks of drone has been enhanced. Recent object detection are dramatically improved in accuracy by victimization convolution neural networks. Sometimes GPS information will become defective underneath conduits, within subways, or close to high voltage (HV) power lines, that may result in flight inaccuracies. To optimize that, we ARE emerging a drone for whole grid structure checkups. Drones essentially use Global Positioning System (GPS) for independent control & monitoring, through image processing. This article defines a way for examine smart grid victimizing drones & employing a Pan-Tilt-Zoom (PTZ) camera. With the ambition of emerging associate self-directed flight & secure power lines for better Grid Performance & sort fault clearance with decreasing human life risk.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115916422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783450
Preeti Topno, G. Murmu
To preserve the edges from corrupted noise, median filter is a popular choice for filtering algorithms. The salt and pepper noise is one of the main problems present while capturing an image. To solve this problem the edges were detected, using different edge detection operators which include Roberts, Sobel, Prewitt and Canny, prior to processing by a median filter. Several simulations were carried out over a number of digital images. The peak signal to noise ratio (PSNR) is higher using Prewitt operator than Sobel operator. Similarly, results also confirm the better performance of Canny edge detection algorithm over others for edge detection however computational cost is high in it compared to other methods.
{"title":"An Improved Edge Detection Method based on Median Filter","authors":"Preeti Topno, G. Murmu","doi":"10.1109/DEVIC.2019.8783450","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783450","url":null,"abstract":"To preserve the edges from corrupted noise, median filter is a popular choice for filtering algorithms. The salt and pepper noise is one of the main problems present while capturing an image. To solve this problem the edges were detected, using different edge detection operators which include Roberts, Sobel, Prewitt and Canny, prior to processing by a median filter. Several simulations were carried out over a number of digital images. The peak signal to noise ratio (PSNR) is higher using Prewitt operator than Sobel operator. Similarly, results also confirm the better performance of Canny edge detection algorithm over others for edge detection however computational cost is high in it compared to other methods.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116229632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783211
Tara Prasanna Dash, J. Jena, E. Mohapatra, S. Dey, S. Das, C. K. Maiti
Multiple-gate MOSFETs have emerged as potential candidates for the future device generations considering the continuous increase in performance requirements. Therefore, a great demand to control strain/stress and their variation in MOSFETs has recently emerged. In this work, biaxial and uniaxial strain techniques are implemented in the device channel for both p- and n-type MOSFETs. Stress/strain mapping in strained-Si and SiGe channel trapezoidal tri-gate FinFET devices are studied through three-dimensional (3D) numerical simulation, with particular focus on enhancement of drain current. Following the strain/stress profiles simulated, the piezoresistive changes are implemented in the simulator to describe the strain effects on device operation.
{"title":"Role of Stress/Strain Mapping in Advanced CMOS Process Technology Nodes","authors":"Tara Prasanna Dash, J. Jena, E. Mohapatra, S. Dey, S. Das, C. K. Maiti","doi":"10.1109/DEVIC.2019.8783211","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783211","url":null,"abstract":"Multiple-gate MOSFETs have emerged as potential candidates for the future device generations considering the continuous increase in performance requirements. Therefore, a great demand to control strain/stress and their variation in MOSFETs has recently emerged. In this work, biaxial and uniaxial strain techniques are implemented in the device channel for both p- and n-type MOSFETs. Stress/strain mapping in strained-Si and SiGe channel trapezoidal tri-gate FinFET devices are studied through three-dimensional (3D) numerical simulation, with particular focus on enhancement of drain current. Following the strain/stress profiles simulated, the piezoresistive changes are implemented in the simulator to describe the strain effects on device operation.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116239155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783747
Sangita Das, Urmimala Dey, S. De, A. Deyasi
Characteristic Lowest photonic bandgap width is analytically computed for double negative index materials from dispersion relation under propagation of TE wave. Three well-established metamaterials are considered for simulation purpose, and two lower photonic bandgaps are computed with varying incidence angle for a few materials. Results are compared with existing bandgap widths obtained for positive refractive indices based materials. Results suggest that negative index materials offer higher bandgap width than existing positive index materials, and hence may be considered as better candidate for optical filter design.
{"title":"Investigating Photonic Bandgap Width for Metamaterial based PhC Structure from Dispersion Relation","authors":"Sangita Das, Urmimala Dey, S. De, A. Deyasi","doi":"10.1109/DEVIC.2019.8783747","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783747","url":null,"abstract":"Characteristic Lowest photonic bandgap width is analytically computed for double negative index materials from dispersion relation under propagation of TE wave. Three well-established metamaterials are considered for simulation purpose, and two lower photonic bandgaps are computed with varying incidence angle for a few materials. Results are compared with existing bandgap widths obtained for positive refractive indices based materials. Results suggest that negative index materials offer higher bandgap width than existing positive index materials, and hence may be considered as better candidate for optical filter design.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126187997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article we present a study of different Reinforcement Learning algorithms and how these algorithms can be used to train agents which can achieve human level performance in different games and control tasks.
{"title":"Gameplay using Reinforcement Learning","authors":"Dilip Kumar, Ritesh Prasad, Kumar Ritu Raj Singh, Surbhi Singh","doi":"10.1109/DEVIC.2019.8783550","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783550","url":null,"abstract":"In this article we present a study of different Reinforcement Learning algorithms and how these algorithms can be used to train agents which can achieve human level performance in different games and control tasks.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125818743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783562
E. Mohapatra, S. Das, Tara Prasanna Dash, S. Dey, J. Jena, C. K. Maiti
Power transistors based on gallium nitride (GaN) enable power electronic switches to operate at much higher switching frequencies compared to those based on silicon (Si). In this work, using TCAD simulations, we show that GaN-based high electron mobility transistors (HEMTs) can be optimized to have effectively reduced undesirable parasitic capacitances to greatly improve both the high transconductance and current gain cutoff frequency simultaneously. We report a new generation of high performance AlGaN/GaN HEMTs grown on high resistivity SiC substrates. We map out to evaluate small signal and large signal device performances against technological parameters such as the gate length, field plate length and the source-drain contact separation. The device with a gate length of $mathbf{0.25}mumathbf{m}$ and field plate length of $mathbf{0.3}mumathbf{m}$ exhibits a maximum dc drain current density of 3.66 A/mm at $mathbf{V}_{mathbf{GS}}=3mathbf{V}$ with an extrinsic transconductance of 233.6 mS/mm and an extrinsic current gain cut-off frequency $(mathbf{f}_{mathbf{t}})$ of 78.9 GHz.
与基于硅(Si)的功率晶体管相比，基于氮化镓(GaN)的功率晶体管使电力电子开关能够以更高的开关频率工作。在这项工作中，使用TCAD模拟，我们表明基于氮化镓的高电子迁移率晶体管(hemt)可以优化，有效地减少不必要的寄生电容，从而同时大大提高高跨导和电流增益截止频率。我们报道了在高电阻SiC衬底上生长的新一代高性能AlGaN/GaN hemt。我们打算根据栅极长度、场极板长度和源漏接触距离等技术参数来评估小信号和大信号器件的性能。该器件栅极长度为$mathbf{0.25}mumathbf{m}$，场极板长度为$mathbf{0.3}mumathbf{m}$，在$mathbf{V}_{mathbf{GS}}=3mathbf{V}$时，最大直流漏极电流密度为3.66 a /mm，外在跨导为233.6 mS/mm，外在电流增益截止频率$(mathbf{f}_{mathbf{t}})$为78.9 GHz。
{"title":"High Frequency Performance of AlGaN/GaN HEMTs Fabricated on SiC Substrates","authors":"E. Mohapatra, S. Das, Tara Prasanna Dash, S. Dey, J. Jena, C. K. Maiti","doi":"10.1109/DEVIC.2019.8783562","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783562","url":null,"abstract":"Power transistors based on gallium nitride (GaN) enable power electronic switches to operate at much higher switching frequencies compared to those based on silicon (Si). In this work, using TCAD simulations, we show that GaN-based high electron mobility transistors (HEMTs) can be optimized to have effectively reduced undesirable parasitic capacitances to greatly improve both the high transconductance and current gain cutoff frequency simultaneously. We report a new generation of high performance AlGaN/GaN HEMTs grown on high resistivity SiC substrates. We map out to evaluate small signal and large signal device performances against technological parameters such as the gate length, field plate length and the source-drain contact separation. The device with a gate length of $mathbf{0.25}mumathbf{m}$ and field plate length of $mathbf{0.3}mumathbf{m}$ exhibits a maximum dc drain current density of 3.66 A/mm at $mathbf{V}_{mathbf{GS}}=3mathbf{V}$ with an extrinsic transconductance of 233.6 mS/mm and an extrinsic current gain cut-off frequency $(mathbf{f}_{mathbf{t}})$ of 78.9 GHz.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126832033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper mainly proposes a novel current-voltage characteristic model of silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) for achieving significant amount of drain current performance. First, drain current characteristics is performed for increasing gate-source voltage with variable mobility and channel length circumstances. Then I-V characteristics of SiC MOSFET are compared and evaluated for different operating states i.e. cut-off, linear and saturation. Later, drain current is characterized with varying the transconductance. Finally the drain current is simulated for the proposed novel method and it is with that of existing method. From the simulated performance, it is obvious that the performance in terms of drain current increases significantly for the novel model than that of the existing model.
{"title":"A Novel Model for Analyzing Current-Voltage Characterization of SiC MOSFET","authors":"Sabuj Sarkar, Saikat Adhikary, Md. Mostafizur Rahman","doi":"10.1109/DEVIC.2019.8783905","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783905","url":null,"abstract":"This paper mainly proposes a novel current-voltage characteristic model of silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) for achieving significant amount of drain current performance. First, drain current characteristics is performed for increasing gate-source voltage with variable mobility and channel length circumstances. Then I-V characteristics of SiC MOSFET are compared and evaluated for different operating states i.e. cut-off, linear and saturation. Later, drain current is characterized with varying the transconductance. Finally the drain current is simulated for the proposed novel method and it is with that of existing method. From the simulated performance, it is obvious that the performance in terms of drain current increases significantly for the novel model than that of the existing model.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124803262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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