Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783699
A. Chakraborty, Suporna Bhowmick, Debarati Chakraborty, A. Deyasi, A. Sarkar
Lowest two quantum states of a double-well-triple-barrier structure are numerically analyzed for Pöschl-Teller potential profile. Kane-type band nonparabolicity of first order is considered for rational replication purpose, and effective mass mismatch between well and barrier layers are included in the computation following the BenDaniel Duke boundary conditions. Transmission coefficient is plotted as a function of input energy flux, and peaks are identified for eigenstate determination in presence and absence of external electric field. Results are compared with that obtained for ideal rectangular geometry, and better quasi-peak characteristics speaks in favor of the proposed structure for photodetector application, where tailoring of subband energy can be achieved by means of structural parameter variations.
{"title":"Boundstates Computation for Double Quantum Well Structure with Pöschl-Teller Potential for MWIR Photodetector Design","authors":"A. Chakraborty, Suporna Bhowmick, Debarati Chakraborty, A. Deyasi, A. Sarkar","doi":"10.1109/DEVIC.2019.8783699","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783699","url":null,"abstract":"Lowest two quantum states of a double-well-triple-barrier structure are numerically analyzed for Pöschl-Teller potential profile. Kane-type band nonparabolicity of first order is considered for rational replication purpose, and effective mass mismatch between well and barrier layers are included in the computation following the BenDaniel Duke boundary conditions. Transmission coefficient is plotted as a function of input energy flux, and peaks are identified for eigenstate determination in presence and absence of external electric field. Results are compared with that obtained for ideal rectangular geometry, and better quasi-peak characteristics speaks in favor of the proposed structure for photodetector application, where tailoring of subband energy can be achieved by means of structural parameter variations.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128331113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783311
Ashutosh Anand, S. Kundu
In this paper, a spiral-shaped piezoelectric cantilever structure is proposed to harvest the energy from the vibration of the heartbeat. The proposed cantilever structure is $14 mu mathrm{m}$ thin with the outer dimension of $5 mathbf{mm} mathbf{x} 5 mathbf{mm}$. The spiral structure reduces the stiffness of the cantilever beam which reduces the resonant frequency. A proof mass is introduced in the spiral structure to further reduce the resonant frequency of the cantilever beam. Due to biocompatibility nature, Zinc oxide (ZnO) has been used as the piezoelectric material for the design. The proposed structure has a resonant frequency of 45.8 Hz which is suitable for harvesting energy from the human heartbeat. The harvester generates peak output open circuit voltage of 3.2 V and peak output power of $mathbf{3.5} mu mathbf{W}$ at the resonant frequency of 45.8 Hz for a sinusoidal acceleration of 1g.
本文提出了一种螺旋形压电悬臂结构，用于从心跳振动中获取能量。所提出的悬臂结构为$14 mu mathbf{m}$，外维为$5 mathbf{mm} mathbf{x} 5 mathbf{mm}$。螺旋结构降低了悬臂梁的刚度，从而降低了谐振频率。在螺旋结构中引入证明质量，进一步降低悬臂梁的谐振频率。由于氧化锌具有生物相容性，因此采用氧化锌作为压电材料进行设计。所提出的结构具有45.8 Hz的谐振频率，适合从人类心跳中收集能量。当正弦加速度为1g时，收割机的峰值输出开路电压为3.2 V，峰值输出功率为$mathbf{3.5} mu mathbf{W}$，谐振频率为45.8 Hz。
{"title":"Design of Mems Based Piezoelectric Energy Harvester for Pacemaker","authors":"Ashutosh Anand, S. Kundu","doi":"10.1109/DEVIC.2019.8783311","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783311","url":null,"abstract":"In this paper, a spiral-shaped piezoelectric cantilever structure is proposed to harvest the energy from the vibration of the heartbeat. The proposed cantilever structure is $14 mu mathrm{m}$ thin with the outer dimension of $5 mathbf{mm} mathbf{x} 5 mathbf{mm}$. The spiral structure reduces the stiffness of the cantilever beam which reduces the resonant frequency. A proof mass is introduced in the spiral structure to further reduce the resonant frequency of the cantilever beam. Due to biocompatibility nature, Zinc oxide (ZnO) has been used as the piezoelectric material for the design. The proposed structure has a resonant frequency of 45.8 Hz which is suitable for harvesting energy from the human heartbeat. The harvester generates peak output open circuit voltage of 3.2 V and peak output power of $mathbf{3.5} mu mathbf{W}$ at the resonant frequency of 45.8 Hz for a sinusoidal acceleration of 1g.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130431014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783331
I. Mazumder
Emotion is the fundamental behavioral attributes of humans. To identify emotional variations from Electroencephalogram signals have currently expanded consideration amid BCI researchers. In this work, emotion recognition from EEG is performed using 21channel EEG acquisition device employing 10–20 method of electrode placement. The experiment being performed on issues of the peer group of 20–25 years of 16 university students (eight females and eight males). Audio-visual stimuli are used for bringing four dissimilar emotions (Happy, Sad, Fear and Relaxed) and corresponding signals are processed for emotion classification. At first EEG signals are filtered using Butterworth 4th order filter which is band limited by 0.5-60 Hz after that smoothened with the help of Surface Laplacian filter. Filtered EEG signals are feature extracted using Power Spectral Density, Wavelet Decomposition, Hjorth Parameter and AR parameter. After that Linear SVM classifier is used. Support Vector Machine classifier generates the best result when used with Wavelet coefficient feature extraction technique (96.81%). The experimental result also shows the diminutive interval EEG can be used for sensing the emotional thought variations effectively. We found that the EEG signals contained adequate information to separate four different emotion classes.
{"title":"An Analytical Approach of EEG Analysis for Emotion Recognition","authors":"I. Mazumder","doi":"10.1109/DEVIC.2019.8783331","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783331","url":null,"abstract":"Emotion is the fundamental behavioral attributes of humans. To identify emotional variations from Electroencephalogram signals have currently expanded consideration amid BCI researchers. In this work, emotion recognition from EEG is performed using 21channel EEG acquisition device employing 10–20 method of electrode placement. The experiment being performed on issues of the peer group of 20–25 years of 16 university students (eight females and eight males). Audio-visual stimuli are used for bringing four dissimilar emotions (Happy, Sad, Fear and Relaxed) and corresponding signals are processed for emotion classification. At first EEG signals are filtered using Butterworth 4th order filter which is band limited by 0.5-60 Hz after that smoothened with the help of Surface Laplacian filter. Filtered EEG signals are feature extracted using Power Spectral Density, Wavelet Decomposition, Hjorth Parameter and AR parameter. After that Linear SVM classifier is used. Support Vector Machine classifier generates the best result when used with Wavelet coefficient feature extraction technique (96.81%). The experimental result also shows the diminutive interval EEG can be used for sensing the emotional thought variations effectively. We found that the EEG signals contained adequate information to separate four different emotion classes.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127605721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the growing popularity of football globally, the accuracy of each and every events and technology involved in the game is a concern. Critical situations arise when the referee cannot discriminate a goal or no goal by fine margins due to human visual limitations. Nowadays Video-Assistant Referee (VAR) and other technologies perform accurate decision-making can be implemented in a live match. But the process consumes a lot of time which reduces the fast pace of the game and can cause unnecessary distractions. This study aims to design an automatic goal-line detection system with the help of radio frequency identification (RFID) - Arduino interfacing. RFID incorporates the use of radio waves to extract the information stored in a tag attached to an object. The proposed system uses RFID tags which are fitted on the inside surface of a football. The information embedded in the tags is read by RFID readers, placed behind the goalpost. This technology does not require any additional programming and camera analysis in decision-making, thus making the system faster to help the referees in quick decision-making and maintaining the pace of the game.
{"title":"Radio Frequency Identification based Goal Line Technology for Quick Decision Making in a Football Match","authors":"Samrat Ghosh, Suvam Sasmal, Saptarshi Bhui, Sandipan Dutta, Swarnadeep Mukherjee, Arko Majumder, Biswarup Ganguly","doi":"10.1109/DEVIC.2019.8783918","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783918","url":null,"abstract":"With the growing popularity of football globally, the accuracy of each and every events and technology involved in the game is a concern. Critical situations arise when the referee cannot discriminate a goal or no goal by fine margins due to human visual limitations. Nowadays Video-Assistant Referee (VAR) and other technologies perform accurate decision-making can be implemented in a live match. But the process consumes a lot of time which reduces the fast pace of the game and can cause unnecessary distractions. This study aims to design an automatic goal-line detection system with the help of radio frequency identification (RFID) - Arduino interfacing. RFID incorporates the use of radio waves to extract the information stored in a tag attached to an object. The proposed system uses RFID tags which are fitted on the inside surface of a football. The information embedded in the tags is read by RFID readers, placed behind the goalpost. This technology does not require any additional programming and camera analysis in decision-making, thus making the system faster to help the referees in quick decision-making and maintaining the pace of the game.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134022090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783740
S. Swain, S. K. Das, S. Biswal, Sarosij Adak, U. Nanda, Asmit Amlan Sahoo, Debasish Navak, Biswajit Baral, Dhananjaya Tripathy
This paper presents the performance of non-uniformed doped double gate (DG) MOSFET with different spacer variations with an aim to analysis the effects of short channel and various performance metrics. In this work we have taken silicon as the channel material with non-uniform doping for studying the analog and RF performances. Spacer's materials having different permittivities were used to understand their effect on the device performance. Based on the simulations, we can conclude that analog and Radio Frequency performance of the device shows an significant improvement with addition of spacer layer. We have used computer aided design (TCAD) simulations by SILVACO International.
{"title":"Effect of High-K Spacer on the Performance of Non-Uniformly doped DG-MOSFET","authors":"S. Swain, S. K. Das, S. Biswal, Sarosij Adak, U. Nanda, Asmit Amlan Sahoo, Debasish Navak, Biswajit Baral, Dhananjaya Tripathy","doi":"10.1109/DEVIC.2019.8783740","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783740","url":null,"abstract":"This paper presents the performance of non-uniformed doped double gate (DG) MOSFET with different spacer variations with an aim to analysis the effects of short channel and various performance metrics. In this work we have taken silicon as the channel material with non-uniform doping for studying the analog and RF performances. Spacer's materials having different permittivities were used to understand their effect on the device performance. Based on the simulations, we can conclude that analog and Radio Frequency performance of the device shows an significant improvement with addition of spacer layer. We have used computer aided design (TCAD) simulations by SILVACO International.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134299186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783545
Chiradeep Mukherjee, Saradindu Panda, B. Maji, A. Mukhopadhyay
Quantum-dot Cellular Automata (QCA) explores a novel paradigm to escape from the notion of traditional semiconductor transistor that has dominated processor design from its inception. The realization of Nano communication network by using QCA becomes promising in the arena of application, and such models of QCA networks are expected to be more reliable in terms of error. Hamming code plays an important role in error detection and correction of communication circuits. This work extends the idea of layered T (LT) gate to develop an algorithm to model generic QCA Hamming code generator. As a faithful instantiation, even and odd (7,4) Hamming code generators are designed by using QCADesigner simulator to demonstrate the functionality and testability of proposed algorithm based methodology.
{"title":"Hamming Code Generators using LTEx Module of Quantum-dot Cellular Automata","authors":"Chiradeep Mukherjee, Saradindu Panda, B. Maji, A. Mukhopadhyay","doi":"10.1109/DEVIC.2019.8783545","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783545","url":null,"abstract":"Quantum-dot Cellular Automata (QCA) explores a novel paradigm to escape from the notion of traditional semiconductor transistor that has dominated processor design from its inception. The realization of Nano communication network by using QCA becomes promising in the arena of application, and such models of QCA networks are expected to be more reliable in terms of error. Hamming code plays an important role in error detection and correction of communication circuits. This work extends the idea of layered T (LT) gate to develop an algorithm to model generic QCA Hamming code generator. As a faithful instantiation, even and odd (7,4) Hamming code generators are designed by using QCADesigner simulator to demonstrate the functionality and testability of proposed algorithm based methodology.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"243 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132521250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783966
D. Dash, C. Pandey, S. Chaudhury, S. Tripathy
This paper investigates on the structural stability and electronic properties of titanium dioxide (TiO2) nanowires of different shapes using first-principle based density functional approach. Out of linear, ladder, and saw tooth shaped atomic configuration, the ladder shape atomic configuration is energetically most stable. After computation of lattice parameters as well as various mechanical properties of nanowire TiO2, it is seen that highest bulk moduli is obtained for linear TiO2 nanowire which shows the highest mechanical strength for the structure whereas ladder configuration has lowest bulk moduli which shows the lowest mechanical strength for the structure. Analysis of various electronic properties show that different configurations of TiO2 nanowires can have different utility as solid state materials.
{"title":"Structure and Electronic Properties of TiO2 Nanowires of Different Geometrical Shapes: An Abinitio Study","authors":"D. Dash, C. Pandey, S. Chaudhury, S. Tripathy","doi":"10.1109/DEVIC.2019.8783966","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783966","url":null,"abstract":"This paper investigates on the structural stability and electronic properties of titanium dioxide (TiO2) nanowires of different shapes using first-principle based density functional approach. Out of linear, ladder, and saw tooth shaped atomic configuration, the ladder shape atomic configuration is energetically most stable. After computation of lattice parameters as well as various mechanical properties of nanowire TiO2, it is seen that highest bulk moduli is obtained for linear TiO2 nanowire which shows the highest mechanical strength for the structure whereas ladder configuration has lowest bulk moduli which shows the lowest mechanical strength for the structure. Analysis of various electronic properties show that different configurations of TiO2 nanowires can have different utility as solid state materials.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"213 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114845551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783668
Aashita Raj, Sai Yaswanth Divvela, Geetanjali Singh, S. Kundu
The output from digital input buffer is not stable when input noise is present near the threshold voltage of inverter. Hysteresis comparator with two threshold voltages gives stable output with noisy input signal. This paper presents the trade-off characteristics between the hysteresis voltage and the power consumption of a hysteresis comparator. An optimal design point is proposed with a hysteresis voltage up to $mathbf{pm 180 mathrm{mV}}$ with a power consumption of $mathbf{0.713 mu mathrm{W}}$.
当输入噪声接近逆变器的阈值电压时，数字输入缓冲器的输出不稳定。具有两个阈值电压的迟滞比较器在噪声输入信号下输出稳定。本文介绍了滞回比较器的滞回电压与功耗之间的权衡特性。提出了一个迟滞电压为$mathbf{pm 180 mathm {mV}}$，功耗为$mathbf{0.713 mu mathm {W}}$的最佳设计点。
{"title":"Trade-off Characteristics of Hysteresis Comparator used in Noisy Systems","authors":"Aashita Raj, Sai Yaswanth Divvela, Geetanjali Singh, S. Kundu","doi":"10.1109/DEVIC.2019.8783668","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783668","url":null,"abstract":"The output from digital input buffer is not stable when input noise is present near the threshold voltage of inverter. Hysteresis comparator with two threshold voltages gives stable output with noisy input signal. This paper presents the trade-off characteristics between the hysteresis voltage and the power consumption of a hysteresis comparator. An optimal design point is proposed with a hysteresis voltage up to $mathbf{pm 180 mathrm{mV}}$ with a power consumption of $mathbf{0.713 mu mathrm{W}}$.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125768018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783959
S. Mukhopadhyay, A. Deyasi
Role of body effect coefficient on threshold voltage of strained Si/SiGe MOSFET is analytically investigated. Effect of dielectric thickness, doping concentration and dielectric material are computed on the threshold condition both in presence and absence of body effect. Simulation findings reveal that introduction of strained material in otherwise ideal structure enhances carrier mobility which, in turn, reduces threshold voltage. Sharp peak is observed when body effect is taken into account for a particular heterostructure composition due to enhancement of tunneling probability which decrease of barrier potential, and thus carrier flow is augmented. A few results for n-channel MOSFET are also represented to further justify the importance of novelty of the paper. Result also suggests that higher doping or thicker dielectric region leads to depletion mode of operation. An optimized design criterion is evaluated for the minimum threshold under inversion condition.
{"title":"Role of Body Effect on Threshold Voltage of Strained $mathrm{Si}-mathrm{Si}_{mathrm{X}}mathrm{Ge}_{1-mathrm{X}}$ MOSFET","authors":"S. Mukhopadhyay, A. Deyasi","doi":"10.1109/DEVIC.2019.8783959","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783959","url":null,"abstract":"Role of body effect coefficient on threshold voltage of strained Si/SiGe MOSFET is analytically investigated. Effect of dielectric thickness, doping concentration and dielectric material are computed on the threshold condition both in presence and absence of body effect. Simulation findings reveal that introduction of strained material in otherwise ideal structure enhances carrier mobility which, in turn, reduces threshold voltage. Sharp peak is observed when body effect is taken into account for a particular heterostructure composition due to enhancement of tunneling probability which decrease of barrier potential, and thus carrier flow is augmented. A few results for n-channel MOSFET are also represented to further justify the importance of novelty of the paper. Result also suggests that higher doping or thicker dielectric region leads to depletion mode of operation. An optimized design criterion is evaluated for the minimum threshold under inversion condition.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121456406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-03-01DOI: 10.1109/DEVIC.2019.8783290
Deependra Chettri, Abinash Thapa, Smita Rai, P. Chettri, C. Sarkar, B. Sharma
The development of Resistive Ram (RRAM) has been greatly promising and has emerged as highly reliable nonvolatile memory. The biasing of the device creates the filament formation that is due to the moving charge and shallow localized charge. However, the conduction mechanism of resistive switching changes considerably depending on the type of the material used in the dielectric layer and the electrode. Amongst the important mechanism initiating the filament formation in the device, we have mentioned about Space Charge Limited Conduction (SCLC) and F-N tunneling in our work particularly considering the development of conductive filament (CF) with the interest in the I-V characteristics of the device. The RRAM device has huge potential and many advantages over other non-volatile technology i.e. high switching speed, high device density and low power consumption. In this paper we have considered LD (low-dimensional) forms of HfO2 and TiO2 dielectrics for applications in RRAM (Resistive Random Access Memory) devices. The retention of memory device is determined by its saturation curve, HfO2 showed slower saturation at −18mA providing higher retention factor than. The faster decrease in curve for HfO2 based RRAM at −19mA, promoting low power consumption of memory device. Therefore we have obtained that the retention and power consumption of HfO2 is better than the TiO2.
{"title":"Comparative computational study of LD-HfO2 and TiO2 as layered dilectrics in RRAM","authors":"Deependra Chettri, Abinash Thapa, Smita Rai, P. Chettri, C. Sarkar, B. Sharma","doi":"10.1109/DEVIC.2019.8783290","DOIUrl":"https://doi.org/10.1109/DEVIC.2019.8783290","url":null,"abstract":"The development of Resistive Ram (RRAM) has been greatly promising and has emerged as highly reliable nonvolatile memory. The biasing of the device creates the filament formation that is due to the moving charge and shallow localized charge. However, the conduction mechanism of resistive switching changes considerably depending on the type of the material used in the dielectric layer and the electrode. Amongst the important mechanism initiating the filament formation in the device, we have mentioned about Space Charge Limited Conduction (SCLC) and F-N tunneling in our work particularly considering the development of conductive filament (CF) with the interest in the I-V characteristics of the device. The RRAM device has huge potential and many advantages over other non-volatile technology i.e. high switching speed, high device density and low power consumption. In this paper we have considered LD (low-dimensional) forms of HfO2 and TiO2 dielectrics for applications in RRAM (Resistive Random Access Memory) devices. The retention of memory device is determined by its saturation curve, HfO2 showed slower saturation at −18mA providing higher retention factor than. The faster decrease in curve for HfO2 based RRAM at −19mA, promoting low power consumption of memory device. Therefore we have obtained that the retention and power consumption of HfO2 is better than the TiO2.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"265 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122947589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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