Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416732
K. Tsia, A. Poon
We numerically simulate silicon-based waveguide-coupled planar square microcavities with embedded square lattice of air holes. Our two-dimensional finite-difference time-domain simulations reveal quasi-periodic high-Q resonances with frequencies limited within the first band of the photonic crystal.
{"title":"Silicon-based waveguide-coupled planar photonic-crystal-embedded microcavities","authors":"K. Tsia, A. Poon","doi":"10.1109/GROUP4.2004.1416732","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416732","url":null,"abstract":"We numerically simulate silicon-based waveguide-coupled planar square microcavities with embedded square lattice of air holes. Our two-dimensional finite-difference time-domain simulations reveal quasi-periodic high-Q resonances with frequencies limited within the first band of the photonic crystal.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123493237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416675
H. Sugawara, S. Nakamura, M. Oouchi, Y. Kumura, T. Shishido, M. Kishi, M. Tsuchiya
Polycrystalline /spl beta/-FeSi/sub 2/ droplets were successfully formed by an exceptionally low temperature process: the room temperature pulsed laser deposition and a 350 /spl deg/C post-annealing. Their evidences have been derived by microscopic Raman spectroscopy and TEM observation.
{"title":"Low temperature formation of /spl beta/--FeSi/sub 2/ polycrystalline by pulsed laser deposition and thermal annealing","authors":"H. Sugawara, S. Nakamura, M. Oouchi, Y. Kumura, T. Shishido, M. Kishi, M. Tsuchiya","doi":"10.1109/GROUP4.2004.1416675","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416675","url":null,"abstract":"Polycrystalline /spl beta/-FeSi/sub 2/ droplets were successfully formed by an exceptionally low temperature process: the room temperature pulsed laser deposition and a 350 /spl deg/C post-annealing. Their evidences have been derived by microscopic Raman spectroscopy and TEM observation.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122692230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416657
M. Schnarrenberger, L. Zimmermann, T. Mitze, J. Bruns, K. Petermann
We compared two different techniques of facet preparation of silicon-on-insulator (SOI) waveguides: The conventional by dicing and polishing and our proposed by dry etching the facets and cleaving along anisotropically etched cleaving grooves.
{"title":"Facet preparation of SOI waveguides by etching and cleaving compared to dicing and polishing","authors":"M. Schnarrenberger, L. Zimmermann, T. Mitze, J. Bruns, K. Petermann","doi":"10.1109/GROUP4.2004.1416657","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416657","url":null,"abstract":"We compared two different techniques of facet preparation of silicon-on-insulator (SOI) waveguides: The conventional by dicing and polishing and our proposed by dry etching the facets and cleaving along anisotropically etched cleaving grooves.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126988888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416725
S. Weiss, M. Haurylau, P. Fauchet
Silicon-based modulators are the missing link necessary for practical optical interconnects. Electrically and thermally tunable silicon-based photonic bandgap structures are demonstrated as building blocks for compact and low power out-of-plane and in-plane optical modulation.
{"title":"Silicon-based photonic bandgap modulators","authors":"S. Weiss, M. Haurylau, P. Fauchet","doi":"10.1109/GROUP4.2004.1416725","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416725","url":null,"abstract":"Silicon-based modulators are the missing link necessary for practical optical interconnects. Electrically and thermally tunable silicon-based photonic bandgap structures are demonstrated as building blocks for compact and low power out-of-plane and in-plane optical modulation.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121656672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416640
Y. Tanushi, M. Wake, K. Wakushima, K. Suzuki, S. Yokoyama
Ring resonator switches using electro-optic materials on Si LSI are proposed and the operation voltages are simulated. Fabrication technologies for the resonators are developed. Light propagation in the optical waveguide using electro-optic material is confirmed.
{"title":"Technology for ring resonator switches using electro-optic materials","authors":"Y. Tanushi, M. Wake, K. Wakushima, K. Suzuki, S. Yokoyama","doi":"10.1109/GROUP4.2004.1416640","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416640","url":null,"abstract":"Ring resonator switches using electro-optic materials on Si LSI are proposed and the operation voltages are simulated. Fabrication technologies for the resonators are developed. Light propagation in the optical waveguide using electro-optic material is confirmed.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115892879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416664
Xinwei Zhao, K. Kohno, S. Harako, N. Takahashi, S. Komuro
This paper presents the formation and time-resolved investigation of Er and Yb co-doped nc-Si thin films. Since the energy of the only one excited state /sup 2/F/sub 5/2/ of a Yb/sup 3+/ ion is almost same to that of the second excited state /sup 4/I/sub 11/2/ of an Er/sup 3-/ ion, the optical transition between them is expected to raise the excitation rate of the Er/sup 3+/ ion.
{"title":"Doping density dependence of 4f-4f couplings between Er and Yb ions in nanocrystalline Si","authors":"Xinwei Zhao, K. Kohno, S. Harako, N. Takahashi, S. Komuro","doi":"10.1109/GROUP4.2004.1416664","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416664","url":null,"abstract":"This paper presents the formation and time-resolved investigation of Er and Yb co-doped nc-Si thin films. Since the energy of the only one excited state /sup 2/F/sub 5/2/ of a Yb/sup 3+/ ion is almost same to that of the second excited state /sup 4/I/sub 11/2/ of an Er/sup 3-/ ion, the optical transition between them is expected to raise the excitation rate of the Er/sup 3+/ ion.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116859791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416728
D. Prather
In this work we present and experimentally validate self-collimation in planar photonic crystals (PhC) as a means to achieve defect-free confinement of light in PhC devices. We demonstrate the ability to arbitrarily guide and route light by exploiting the dispersive characteristics of the photonic crystal. Propagation loss as low as 2.17 dB/mm is measured, and experimental validation of routing structures is presented.
{"title":"Advances in dispersion-based silicon photonic-crystal physics, devices and fabrication","authors":"D. Prather","doi":"10.1109/GROUP4.2004.1416728","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416728","url":null,"abstract":"In this work we present and experimentally validate self-collimation in planar photonic crystals (PhC) as a means to achieve defect-free confinement of light in PhC devices. We demonstrate the ability to arbitrarily guide and route light by exploiting the dispersive characteristics of the photonic crystal. Propagation loss as low as 2.17 dB/mm is measured, and experimental validation of routing structures is presented.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114859023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416739
H. Isshiki, K. Masaki, K. Ueda, R. Saito, T. Kimura
Er-related 1.5 /spl mu/m emissions with linewidth of less than 1 meV and 10 /spl mu/s lifetime have been observed in crystalline ErSiO superstructures.
{"title":"1.5 /spl mu/m PL fine structures and their extreme fast decay of crystalline ErSiO compounds","authors":"H. Isshiki, K. Masaki, K. Ueda, R. Saito, T. Kimura","doi":"10.1109/GROUP4.2004.1416739","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416739","url":null,"abstract":"Er-related 1.5 /spl mu/m emissions with linewidth of less than 1 meV and 10 /spl mu/s lifetime have been observed in crystalline ErSiO superstructures.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"26 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121014243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416698
N. Usami, A. Arnold, K. Fujiwara, K. Nakjima, T. Yokoyama, Y. Shiraki
Stacked Ge dots are embedded in the intrinsic layer of Si-based PIN solar cells to improve the device performance. Relationship between structural parameters and photovoltaic properties is discussed through systematic variation of the repetition number of stacked Ge dots and Si spacer width to separate Ge dots.
{"title":"New solar cells using Ge dots embedded in Si PIN structures","authors":"N. Usami, A. Arnold, K. Fujiwara, K. Nakjima, T. Yokoyama, Y. Shiraki","doi":"10.1109/GROUP4.2004.1416698","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416698","url":null,"abstract":"Stacked Ge dots are embedded in the intrinsic layer of Si-based PIN solar cells to improve the device performance. Relationship between structural parameters and photovoltaic properties is discussed through systematic variation of the repetition number of stacked Ge dots and Si spacer width to separate Ge dots.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128051281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416713
Martin A. Green
With the greatly enhanced light-emission efficiencies in bulk silicon light emitting diodes (LEDs), they have investigated prospects for applying these improvements to the co-integration of optical and electronic functions into silicon-based microelectronics. One mitigating factor is the perceived need for microelectronics to move to SOI to maintain present rates of progress, with benefits for ultra-thin Si layers. For further investigation, optical properties of ultra-thin SOI are studied.
{"title":"Silicon-on-insulator (SOI): a path to high-density silicon optoelectronics?","authors":"Martin A. Green","doi":"10.1109/GROUP4.2004.1416713","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416713","url":null,"abstract":"With the greatly enhanced light-emission efficiencies in bulk silicon light emitting diodes (LEDs), they have investigated prospects for applying these improvements to the co-integration of optical and electronic functions into silicon-based microelectronics. One mitigating factor is the perceived need for microelectronics to move to SOI to maintain present rates of progress, with benefits for ultra-thin Si layers. For further investigation, optical properties of ultra-thin SOI are studied.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123354531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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