Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416658
W.N. Chen, C. Chen
PL properties of Er/sup 3+/ doped SiO/sub x/ films containing Si nanoparticles have been studied. Er/sup 3+/ emission intensity does not depend strongly upon crystallinity of Si clusters. The films can yield efficient Er/sup 3+/ emission.
{"title":"Luminescence properties of Er/sup 3+/-doped SiO/sub x/ films containing amorphous Si nanoparticles","authors":"W.N. Chen, C. Chen","doi":"10.1109/GROUP4.2004.1416658","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416658","url":null,"abstract":"PL properties of Er/sup 3+/ doped SiO/sub x/ films containing Si nanoparticles have been studied. Er/sup 3+/ emission intensity does not depend strongly upon crystallinity of Si clusters. The films can yield efficient Er/sup 3+/ emission.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132055340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
One and two-dimensional MMI couplers with strong confinement on SOI were fabricated. Analysis shows that it has lower imbalance, wider bandwidth and better fabrication tolerance. A special process was proposed to eliminate the alignment error.
{"title":"One and two-dimensional MMI device with strong confinement structure on SOI","authors":"Yanzhe Tang, Yiling Sun, Wenhui Wang, Yaming Wu, Jianyi Yang, Xiaoqing Jiang","doi":"10.1109/GROUP4.2004.1416712","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416712","url":null,"abstract":"One and two-dimensional MMI couplers with strong confinement on SOI were fabricated. Analysis shows that it has lower imbalance, wider bandwidth and better fabrication tolerance. A special process was proposed to eliminate the alignment error.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132411990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416659
V. Ligatchev, T. Wong
Specific features of room-temperature I-V and C-V curves of Al/Si/sub 1-x/Ge/sub x//n-Si/Al structures with x = 0.1 - 0.3 and different crystalline orientations of the Si/sub 1-x/Ge/sub x/ layers are studied experimentally and attributed to influence of quantum confinement effect.
{"title":"QD geometry and electrical characteristics of Al/Si/sub 1-x/Ge/sub x//n-Si/Al heterodiodes with different crystalline orientations of Si/sub 1-x/Ge/sub x/ layers","authors":"V. Ligatchev, T. Wong","doi":"10.1109/GROUP4.2004.1416659","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416659","url":null,"abstract":"Specific features of room-temperature I-V and C-V curves of Al/Si/sub 1-x/Ge/sub x//n-Si/Al structures with x = 0.1 - 0.3 and different crystalline orientations of the Si/sub 1-x/Ge/sub x/ layers are studied experimentally and attributed to influence of quantum confinement effect.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124998533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416704
Jinzhong Yu
Si-based optoelectronic devices, including stimulated emission from Si diode, 1.3 and 1.5 /spl mu/m SiGe photodetector with quantum structures, 1 GHz MOS optical modulator, SOI optical switch matrix and wavelength tunable filter are reviewed in the paper.
{"title":"Recent progresses of silicon-based optoelectronic devices for application in fiber communication","authors":"Jinzhong Yu","doi":"10.1109/GROUP4.2004.1416704","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416704","url":null,"abstract":"Si-based optoelectronic devices, including stimulated emission from Si diode, 1.3 and 1.5 /spl mu/m SiGe photodetector with quantum structures, 1 GHz MOS optical modulator, SOI optical switch matrix and wavelength tunable filter are reviewed in the paper.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122537586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416634
M. Chen, C. Tsai
Stimulated emission at silicon bandgap energy has been observed from a silicon nanostructured PN junction diode with a ridge waveguide structure using current injection at room temperature. The output optical power increases superlinearly and multiple spectral peaks appear at wavelengths longer than the main peak of spontaneous emission as the injection current reaches a threshold. A theoretical analysis on population inversion and optical gain at bandgap energy in indirect bandgap semiconductors suggests the possibility of stimulated emission.
{"title":"Stimulated emission at silicon bandgap energy from a nanostructured silicon PN junction diode","authors":"M. Chen, C. Tsai","doi":"10.1109/GROUP4.2004.1416634","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416634","url":null,"abstract":"Stimulated emission at silicon bandgap energy has been observed from a silicon nanostructured PN junction diode with a ridge waveguide structure using current injection at room temperature. The output optical power increases superlinearly and multiple spectral peaks appear at wavelengths longer than the main peak of spontaneous emission as the injection current reaches a threshold. A theoretical analysis on population inversion and optical gain at bandgap energy in indirect bandgap semiconductors suggests the possibility of stimulated emission.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129554399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416646
K. Wada, Jifeng Liu, S. Jongthammanurak, D. D. Cannon, D. T. Danielson, Yasuhiko Ishikawa, Anat Eshed, Ching-yin Hong, J. Michel, L. Kimerling
This work discusses direct integration of Ge detectors and modulators on the Si microphotonics platform. In addition, this paper also describes the challenges and examples of Si microphotonics.
{"title":"Direct integration of Ge detectors and modulators on the Si microphotonics platform","authors":"K. Wada, Jifeng Liu, S. Jongthammanurak, D. D. Cannon, D. T. Danielson, Yasuhiko Ishikawa, Anat Eshed, Ching-yin Hong, J. Michel, L. Kimerling","doi":"10.1109/GROUP4.2004.1416646","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416646","url":null,"abstract":"This work discusses direct integration of Ge detectors and modulators on the Si microphotonics platform. In addition, this paper also describes the challenges and examples of Si microphotonics.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128346285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416644
R. Kelsall, Z. Domic, P. Harrison, S. Lynch, P. Townsend, D. Paul, D. Norris, S. Liew, A. Cullis, X. Li, J. Zhang, M. Bain, H. Gamble
This work demonstrates that there are no fundamental obstacles to the realization of a Si/SiGe quantum cascade laser. This study also reports a number of significant achievements which indicate that the technology is now sufficient, or can be developed to a sufficient level, to attain a working device.
{"title":"Silicon germanium quantum cascade heterostructures for infrared emission","authors":"R. Kelsall, Z. Domic, P. Harrison, S. Lynch, P. Townsend, D. Paul, D. Norris, S. Liew, A. Cullis, X. Li, J. Zhang, M. Bain, H. Gamble","doi":"10.1109/GROUP4.2004.1416644","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416644","url":null,"abstract":"This work demonstrates that there are no fundamental obstacles to the realization of a Si/SiGe quantum cascade laser. This study also reports a number of significant achievements which indicate that the technology is now sufficient, or can be developed to a sufficient level, to attain a working device.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"1130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128353844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416673
N. Park, Taeyoub Kim, Kyung‐Hyun Kim, G. Sung, K. Cho, J. Shin, B. Kim, Seong-Ju Park, Jung-Kun Lee, M. Nastasi
The effect of hydrogenation on Er luminescence depending on the dot size could be explained by Er migration and the number of Er ions near a Si dot before hydrogenation. However, further studies will be needed to completely understand hydrogenation effect.
{"title":"Hydrogenation effect on 1.54-/spl mu/m Er luminescence in Er-doped amorphous silicon quantum dot films","authors":"N. Park, Taeyoub Kim, Kyung‐Hyun Kim, G. Sung, K. Cho, J. Shin, B. Kim, Seong-Ju Park, Jung-Kun Lee, M. Nastasi","doi":"10.1109/GROUP4.2004.1416673","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416673","url":null,"abstract":"The effect of hydrogenation on Er luminescence depending on the dot size could be explained by Er migration and the number of Er ions near a Si dot before hydrogenation. However, further studies will be needed to completely understand hydrogenation effect.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131354842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416671
H. Udono, I. Kikuma, H. Tajima, K. Takarabe
Refractive index of /spl beta/-FeSi/sub 2/ has been investigated by polarized optical reflection measurement on a bulk /spl beta/-FeSi/sub 2/ single crystal and Kramers-Kronig analysis. Anisotropy of refractive index was clearly observed for the light polarization of E//a, E//b and E//c.
{"title":"Anisotropy of refractive index of /spl beta/-FeSi/sub 2/","authors":"H. Udono, I. Kikuma, H. Tajima, K. Takarabe","doi":"10.1109/GROUP4.2004.1416671","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416671","url":null,"abstract":"Refractive index of /spl beta/-FeSi/sub 2/ has been investigated by polarized optical reflection measurement on a bulk /spl beta/-FeSi/sub 2/ single crystal and Kramers-Kronig analysis. Anisotropy of refractive index was clearly observed for the light polarization of E//a, E//b and E//c.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134393936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-29DOI: 10.1109/GROUP4.2004.1416700
P. Boucaud, X. Li, M. E. Kurdi, S. David, X. Checoury, J. Lourtioz, O. Kermarrec, Y. Campidelli, D. Bensahel
We have investigated the optical properties of defect-microcavities in two-dimensional photonic crystals by the room temperature photoluminescence of Ge/Si self-assembled islands. Enhanced emission is observed at 300 K in the 1.2 -1.6 /spl mu/m spectral range.
{"title":"Light emission from Ge/Si self-assembled islands in microcavities","authors":"P. Boucaud, X. Li, M. E. Kurdi, S. David, X. Checoury, J. Lourtioz, O. Kermarrec, Y. Campidelli, D. Bensahel","doi":"10.1109/GROUP4.2004.1416700","DOIUrl":"https://doi.org/10.1109/GROUP4.2004.1416700","url":null,"abstract":"We have investigated the optical properties of defect-microcavities in two-dimensional photonic crystals by the room temperature photoluminescence of Ge/Si self-assembled islands. Enhanced emission is observed at 300 K in the 1.2 -1.6 /spl mu/m spectral range.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125242030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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