Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549571
Thet-Thet Khaing, Hui-Wen Cheng, Kuo-Fu Lee, Yiming Li
Channel engineering is an effective way to suppress the random-dopant-induced characteristic fluctuation in nanometer-scale MOSFET devices. In this work, we study the effect of random dopants on characteristic fluctuations in 16-nm-gate lateral asymmetric channel (LAC) MOSFET devices. Devices with high channel doping concentration near the drain-end (the so-called inverse LAC; inLAC) can effectively improve DC characteristics fluctuation induced by random dopants. We have observed that the DC characteristic of the proposed inLAC MOSFET is less sensitive to random dopant, compared with conventional planar and LAC devices. Consequently, the inLAC MOSFET is further optimized for the best DC characteristic fluctuation reductions.
{"title":"Random-dopant-induced DC characteristic fluctuations in 16-nm-Gate LAC and inLAC MOSFET devices","authors":"Thet-Thet Khaing, Hui-Wen Cheng, Kuo-Fu Lee, Yiming Li","doi":"10.1109/SMELEC.2010.5549571","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549571","url":null,"abstract":"Channel engineering is an effective way to suppress the random-dopant-induced characteristic fluctuation in nanometer-scale MOSFET devices. In this work, we study the effect of random dopants on characteristic fluctuations in 16-nm-gate lateral asymmetric channel (LAC) MOSFET devices. Devices with high channel doping concentration near the drain-end (the so-called inverse LAC; inLAC) can effectively improve DC characteristics fluctuation induced by random dopants. We have observed that the DC characteristic of the proposed inLAC MOSFET is less sensitive to random dopant, compared with conventional planar and LAC devices. Consequently, the inLAC MOSFET is further optimized for the best DC characteristic fluctuation reductions.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133006898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549371
M. Abidin, M. E. Sharifabad, A. M. Hashim, S. Rahman, A. Rahman, R. Qindeel, Nurul Afzan Omar, A. Aziz, M. Hashim, M. M. Mohamed
A gateless field-effect-transistor (FET) device fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure is investigated as a liquid-phase sensor. Good gate controllability for typical current-voltage (I-V) characteristics of FET is observed. This result shows that an undoped-AlGaN surface at the open-gate area is effectively controlled by the isolated gate voltage via chemical solution. Stable pH sensing operation in aqueous solution is observed where this device exhibits a high linear sensitivity of 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V. Due to the occurrence of large leakage current, the Nernstian's like sensitivity is not observed. It is also found that the device is sensitive to changes in electrostatic boundary conditions of the polar liquids. This indicates that the change in dipole moment in each liquid causes the potential change at AlGaN surface.
{"title":"Gateless-FET undoped AlGaN/GaN HEMT structure for liquid-phase sensor","authors":"M. Abidin, M. E. Sharifabad, A. M. Hashim, S. Rahman, A. Rahman, R. Qindeel, Nurul Afzan Omar, A. Aziz, M. Hashim, M. M. Mohamed","doi":"10.1109/SMELEC.2010.5549371","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549371","url":null,"abstract":"A gateless field-effect-transistor (FET) device fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure is investigated as a liquid-phase sensor. Good gate controllability for typical current-voltage (I-V) characteristics of FET is observed. This result shows that an undoped-AlGaN surface at the open-gate area is effectively controlled by the isolated gate voltage via chemical solution. Stable pH sensing operation in aqueous solution is observed where this device exhibits a high linear sensitivity of 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V. Due to the occurrence of large leakage current, the Nernstian's like sensitivity is not observed. It is also found that the device is sensitive to changes in electrostatic boundary conditions of the polar liquids. This indicates that the change in dipole moment in each liquid causes the potential change at AlGaN surface.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133692420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549349
M. Islam, M. S. Bhuyan, S. Ali, M. Othman, B. Majlis
This paper describes the implementation of fuzzy based Handwriting Recognition (HR) system in VHDL. Key motivation of the design is to reduce computational complexity and performance enhancement. Fuzzy intelligent technique is used to tackle inherent ambiguities in different handwriting recognition. This system is capable of recognizing handwritten characters such as one segment, distinguish characters and symbols. The algorithm of the HR system is developed in Matlab first, followed by Fuzzy perception. The model is extensively tested with different sets of handwriting to verify the correct functionality of the system. The Matlab codes are then translated into VHDL using Quartus II from Altera. Simulation results showed clear evidence that fuzzy based HR system is capable of emulating different human reading. Comparison between simulation results in Matlab and VHDL is presented to validate the developed HR system. Quartus Integrated Synthesis (QIS) is used to synthesize the hardware architecture. The system runs at 4.31 MHz with propagation delay of 231 ns. The developed HR hardware system is applicable in automating document-processing task such as mail sorting, check reading in Personal Digital Assistant (PDA), and tablet PCs etc.
{"title":"VHDL implementation of fuzzy based handwriting recognition system","authors":"M. Islam, M. S. Bhuyan, S. Ali, M. Othman, B. Majlis","doi":"10.1109/SMELEC.2010.5549349","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549349","url":null,"abstract":"This paper describes the implementation of fuzzy based Handwriting Recognition (HR) system in VHDL. Key motivation of the design is to reduce computational complexity and performance enhancement. Fuzzy intelligent technique is used to tackle inherent ambiguities in different handwriting recognition. This system is capable of recognizing handwritten characters such as one segment, distinguish characters and symbols. The algorithm of the HR system is developed in Matlab first, followed by Fuzzy perception. The model is extensively tested with different sets of handwriting to verify the correct functionality of the system. The Matlab codes are then translated into VHDL using Quartus II from Altera. Simulation results showed clear evidence that fuzzy based HR system is capable of emulating different human reading. Comparison between simulation results in Matlab and VHDL is presented to validate the developed HR system. Quartus Integrated Synthesis (QIS) is used to synthesize the hardware architecture. The system runs at 4.31 MHz with propagation delay of 231 ns. The developed HR hardware system is applicable in automating document-processing task such as mail sorting, check reading in Personal Digital Assistant (PDA), and tablet PCs etc.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115438022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549503
V. Arora
The charge carriers in nanowires (NWs), carbon nanotubes (CNTs), and those confined to a very high magnetic field have one-dimensional (1D) character as quasi-free propagation of electron waves with analog energy spectrum exists only in one direction. The energy spectrum is quantum (or digital) in other two cartesian directions where electron waves are standing waves. In the quantum limit, an electron (hole) occupies the lowest (highest) digitized/quantized state giving it a distinct 1D character. The energy E =vF | k | in carbon-based devices is linearly dependent on the wave vector k, where vF ≈ 106 m/s. This is in direct contrast to parabolic character E =ħ2 k2/2m∗ in solids with effective mass m∗, for example in silicon NWs. The probability of changing wavevector from +ve to −ve direction through scattering or vice versa is greatly reduced and hence high mobility is expected, especially at low temperatures. The crucial outcome of this paper is the answer to the question: Does a higher mobility leads to a higher ultimate saturation velocity? The distribution function in a high electric field ε is then naturally asymmetrical affected by the energy ±qεℓ absorbed or emitted by a carrier of charge q during its ballistic flight in a mean free path ℓ. The ultimate drift in response to a high electric field results in unidirectional streaming of the otherwise randomly-oriented velocity vectors in equilibrium. The high-field drift limited by the intrinsic velocity is ballistic, unaffected by scattering-limited processes. The ultimate velocity is further limited to an emission of a quantum either in the form of an optical phonon or a photon by an electron excited to a higher state by the applied electric field. The velocity does not depend on scattering parameters. Ballistic processes as a result of reduction in length of a CNT or NW below the scattering-limited mean free path ℓ in the quasi-free direction are also discussed.
{"title":"Ballistic transport in nanowires and carbon nanotubes","authors":"V. Arora","doi":"10.1109/SMELEC.2010.5549503","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549503","url":null,"abstract":"The charge carriers in nanowires (NWs), carbon nanotubes (CNTs), and those confined to a very high magnetic field have one-dimensional (1D) character as quasi-free propagation of electron waves with analog energy spectrum exists only in one direction. The energy spectrum is quantum (or digital) in other two cartesian directions where electron waves are standing waves. In the quantum limit, an electron (hole) occupies the lowest (highest) digitized/quantized state giving it a distinct 1D character. The energy E =vF | k | in carbon-based devices is linearly dependent on the wave vector k, where vF ≈ 106 m/s. This is in direct contrast to parabolic character E =ħ2 k2/2m∗ in solids with effective mass m∗, for example in silicon NWs. The probability of changing wavevector from +ve to −ve direction through scattering or vice versa is greatly reduced and hence high mobility is expected, especially at low temperatures. The crucial outcome of this paper is the answer to the question: Does a higher mobility leads to a higher ultimate saturation velocity? The distribution function in a high electric field ε is then naturally asymmetrical affected by the energy ±qεℓ absorbed or emitted by a carrier of charge q during its ballistic flight in a mean free path ℓ. The ultimate drift in response to a high electric field results in unidirectional streaming of the otherwise randomly-oriented velocity vectors in equilibrium. The high-field drift limited by the intrinsic velocity is ballistic, unaffected by scattering-limited processes. The ultimate velocity is further limited to an emission of a quantum either in the form of an optical phonon or a photon by an electron excited to a higher state by the applied electric field. The velocity does not depend on scattering parameters. Ballistic processes as a result of reduction in length of a CNT or NW below the scattering-limited mean free path ℓ in the quasi-free direction are also discussed.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124054339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549370
L. Taha, B. Majlis, A.A. Ali
This work presents a design methodology of the MEMS piezoelectric microgenerator based on optimizing the voltage and power. A pulse input force is applied on the z-axis, and the generated average voltage and power are recorded. Next, voltage and power optimization are carried out by varying the device parameters and selecting the optimized parameters. The Optimization results indicate that optimum voltage and power occur at 6.07 V and 108.3 µW when load resistance = 1.7 MΩ, damping = 100 Ns/m and thickness to area ratio = 3460 1/m.
{"title":"Design of MEMS piezoelectric microgenerator using voltage and power optimization","authors":"L. Taha, B. Majlis, A.A. Ali","doi":"10.1109/SMELEC.2010.5549370","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549370","url":null,"abstract":"This work presents a design methodology of the MEMS piezoelectric microgenerator based on optimizing the voltage and power. A pulse input force is applied on the z-axis, and the generated average voltage and power are recorded. Next, voltage and power optimization are carried out by varying the device parameters and selecting the optimized parameters. The Optimization results indicate that optimum voltage and power occur at 6.07 V and 108.3 µW when load resistance = 1.7 MΩ, damping = 100 Ns/m and thickness to area ratio = 3460 1/m.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129384659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549545
Mohd Syuhaimi Ab Rahman, N. A. A. M. Arif, A. Ehsan
Transition metal-doped ZnS materials have received broad attention due to their well-known performance in electronics and optics. It has been observed previously by other researchers that Mn is one of interesting dopant. This dopant inside of ZnS offers a feasible means of fine tuning band gap. Because of this property, we interested to study the effect on electrical part. Hence, the aim of this work is discussed in term of electrical dark conductivity and photoconductivity of ZnS: Mn. Zn(1−x)MnxS samples with various x values (0.05≤ x ≤ 0.35) are synthesized by using sol gel spin coating method. Surface morphology and I-V characteristics of the samples are investigated by using FE-SEM and dc electrical measurement with and without UV exposure. It is found that the average diameters are between 25 and 27 nm. The increase of Mn site doping concentration leads to an increase of the electrical dark conductivity and photoconductivity of the samples. Moreover, we have found that the current increases greater with the increment of Mn concentration by using UV source.
{"title":"Conductivity of ZnS: Mn nanocrystal layers with various Mn Ion concentrations","authors":"Mohd Syuhaimi Ab Rahman, N. A. A. M. Arif, A. Ehsan","doi":"10.1109/SMELEC.2010.5549545","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549545","url":null,"abstract":"Transition metal-doped ZnS materials have received broad attention due to their well-known performance in electronics and optics. It has been observed previously by other researchers that Mn is one of interesting dopant. This dopant inside of ZnS offers a feasible means of fine tuning band gap. Because of this property, we interested to study the effect on electrical part. Hence, the aim of this work is discussed in term of electrical dark conductivity and photoconductivity of ZnS: Mn. Zn(1−x)MnxS samples with various x values (0.05≤ x ≤ 0.35) are synthesized by using sol gel spin coating method. Surface morphology and I-V characteristics of the samples are investigated by using FE-SEM and dc electrical measurement with and without UV exposure. It is found that the average diameters are between 25 and 27 nm. The increase of Mn site doping concentration leads to an increase of the electrical dark conductivity and photoconductivity of the samples. Moreover, we have found that the current increases greater with the increment of Mn concentration by using UV source.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129374373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549459
B. Mulyanti, P. Arifin
The growth of GaMnN thin films on c-plane sapphire substrate by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD) method is reported. Cyclopentadienyl manganese tricarbonyl (Cp2MnT) was used as a source of Mn. The growth was conducted at varied growth temperature in the range of 625 to 700°C and V/III flux ratios between 440 and 1080. The growth rate and Mn incorporation into GaN highly depend on growth parameters. From the analysis of XRD spectra, it was found that the highest Mn incorporation into GaMnN which would produce single phase GaMnN (0002) was 6.4 % at growth temperature of 650°C. While at growth temperature of 700°C, the maximum of Mn incorporation into GaMnN films that would still produce single phase film were 3.2 %. The surface roughness of the films determined from AFM image results showing that high growth temperatures tend to improve the surface morphology of GaMnN. The results of magnetization measurement shows hysteresis behavior at room temperature with various values of coercivity, saturation and remnant magnetization in the range of 350-800 Oe, 20-39 emu/cm3 and 10.2–34.4 emu/cm3, respectively depend on the Mn concentration. For the films grown at 650 °C, the highest magnetic moment per Mn-atom was obtained by a sample with Mn concentration of 2.0 %, i.e. 3.1 µΒ/Mn-atom. While for the films grown at 700°C, the highest magnetic moment per Mn-atom was obtained by a sample with Mn concentration of 2.5 %, i.e. 3.7 µΒ /Mn-atom.
{"title":"Plasma-assisted MOCVD growth of GaMnN","authors":"B. Mulyanti, P. Arifin","doi":"10.1109/SMELEC.2010.5549459","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549459","url":null,"abstract":"The growth of GaMnN thin films on c-plane sapphire substrate by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD) method is reported. Cyclopentadienyl manganese tricarbonyl (Cp2MnT) was used as a source of Mn. The growth was conducted at varied growth temperature in the range of 625 to 700°C and V/III flux ratios between 440 and 1080. The growth rate and Mn incorporation into GaN highly depend on growth parameters. From the analysis of XRD spectra, it was found that the highest Mn incorporation into GaMnN which would produce single phase GaMnN (0002) was 6.4 % at growth temperature of 650°C. While at growth temperature of 700°C, the maximum of Mn incorporation into GaMnN films that would still produce single phase film were 3.2 %. The surface roughness of the films determined from AFM image results showing that high growth temperatures tend to improve the surface morphology of GaMnN. The results of magnetization measurement shows hysteresis behavior at room temperature with various values of coercivity, saturation and remnant magnetization in the range of 350-800 Oe, 20-39 emu/cm3 and 10.2–34.4 emu/cm3, respectively depend on the Mn concentration. For the films grown at 650 °C, the highest magnetic moment per Mn-atom was obtained by a sample with Mn concentration of 2.0 %, i.e. 3.1 µΒ/Mn-atom. While for the films grown at 700°C, the highest magnetic moment per Mn-atom was obtained by a sample with Mn concentration of 2.5 %, i.e. 3.7 µΒ /Mn-atom.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126462110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549390
C. Hsiao, Yi-Lun Huang
A low power high linearity folded mixer for 3.6 GHz WiMAX application is presented in this paper. The circuit was designed with TSMC 0.18µm CMOS process. An RF PMOS is used to improve the linearity. The proposed folded mixer has the conversion gain of 4.4dB with LO power at −5dBm. The IIP3 is 5.5dBm, noise figure is 11.6dB, and the power consumption is 2.636mW without output buffer. The total power consumption with output buffer is only 4.4mW under a 1V supply voltage.
{"title":"A low power high linearity CMOS folded mixer for WiMAX application","authors":"C. Hsiao, Yi-Lun Huang","doi":"10.1109/SMELEC.2010.5549390","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549390","url":null,"abstract":"A low power high linearity folded mixer for 3.6 GHz WiMAX application is presented in this paper. The circuit was designed with TSMC 0.18µm CMOS process. An RF PMOS is used to improve the linearity. The proposed folded mixer has the conversion gain of 4.4dB with LO power at −5dBm. The IIP3 is 5.5dBm, noise figure is 11.6dB, and the power consumption is 2.636mW without output buffer. The total power consumption with output buffer is only 4.4mW under a 1V supply voltage.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121411024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549364
P. Ray, V. Rao, P. Apte
The work presented here shows a new design for SU8 based piezoresistive accelerometer, where SU8/carbon black is used as piezoresistors. The accelerometer structure is optimized to generate maximum bending stress at the base of the beams. The structure is inherently temperature insensitive. The design of proof mass is such that the sensitivity to cross axis acceleration is kept within a limit of 4%.
{"title":"Optimum design of SU-8 based accelerometer with reduced cross axis sensitivity","authors":"P. Ray, V. Rao, P. Apte","doi":"10.1109/SMELEC.2010.5549364","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549364","url":null,"abstract":"The work presented here shows a new design for SU8 based piezoresistive accelerometer, where SU8/carbon black is used as piezoresistors. The accelerometer structure is optimized to generate maximum bending stress at the base of the beams. The structure is inherently temperature insensitive. The design of proof mass is such that the sensitivity to cross axis acceleration is kept within a limit of 4%.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113959429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549476
Anwar Jarnda
In this paper, an improved small-signal model parameter extraction method, using genetic algorithm (GA), is presented and implemented for GaN HEMT. The GA optimization is used to generate a high quality reliable starting values for the elements of distributed model. This value are then refined using local optimization technique to find optimal value for each model element. The developed extraction method is validated by simulating S-parameter measurements of a 8x125-µm gate width GaN HEMT over a wide bias range.
{"title":"Genetic algorithm based extraction method for distributed small-signal model of GaN HEMTs","authors":"Anwar Jarnda","doi":"10.1109/SMELEC.2010.5549476","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549476","url":null,"abstract":"In this paper, an improved small-signal model parameter extraction method, using genetic algorithm (GA), is presented and implemented for GaN HEMT. The GA optimization is used to generate a high quality reliable starting values for the elements of distributed model. This value are then refined using local optimization technique to find optimal value for each model element. The developed extraction method is validated by simulating S-parameter measurements of a 8x125-µm gate width GaN HEMT over a wide bias range.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130026571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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