Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549519
H. Hazura, A. Hanim, B. Mardiana, P. Menon
This paper highlights the study of carrier depletion effect on silicon waveguide with p-i-n diode and NPN structure. The device performance is predicted by using 2D Silvaco CAD software under different applied voltages. Device performances in terms of modulation efficiency will be discussed.
{"title":"An analysis of silicon waveguide phase modulation efficiency based on carrier depletion effect","authors":"H. Hazura, A. Hanim, B. Mardiana, P. Menon","doi":"10.1109/SMELEC.2010.5549519","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549519","url":null,"abstract":"This paper highlights the study of carrier depletion effect on silicon waveguide with p-i-n diode and NPN structure. The device performance is predicted by using 2D Silvaco CAD software under different applied voltages. Device performances in terms of modulation efficiency will be discussed.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129018983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549367
K. Hasikin, N. Soin, F. Ibrahim
This paper presents a micro-diaphragm performance analysis for optical sensor for human pulse pressure detection. The effect of diaphragm radius and diaphragm thickness on the static and frequency responses were investigated. It can be concluded that the polyimide micro-diaphragm with a radius of 90µm and thickness of 4µm has achieved the optimum performance in term of the sensitivity, flexural rigidity and resonance frequency.
{"title":"Micro-diaphragm performance analysis for polyimide diaphragm","authors":"K. Hasikin, N. Soin, F. Ibrahim","doi":"10.1109/SMELEC.2010.5549367","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549367","url":null,"abstract":"This paper presents a micro-diaphragm performance analysis for optical sensor for human pulse pressure detection. The effect of diaphragm radius and diaphragm thickness on the static and frequency responses were investigated. It can be concluded that the polyimide micro-diaphragm with a radius of 90µm and thickness of 4µm has achieved the optimum performance in term of the sensitivity, flexural rigidity and resonance frequency.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132262855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549572
M. Sarah, M. Musa, A. Suriani, N. Jumali, Z. Shaameri, A. S. Hamzah, M. Rusop
Spin coating method is used to deposit nanocomposite CNT/MEH-PPV thin film on a glass substrate. The MEH-PPV which is in powder form was weighted and then dissolved into THF. Then, a certain amount of CNTs were added to the MEH-PPV solution. It is then stirred for 3 hours and sonicated for 1 hour to ensure that CNTs is well dispersed in the MEH-PPV solution. The addition of CNTs in the MEH-PPV solution yields a nanocomposite CNT/MEH-PPV solution. The characterization done was to evaluate the conductance as well as the absorption. The conductance and absorption of the nanocomposite showed an increment in value due to the existence of the CNTs.
{"title":"Study on existence of CNT in nanocomposite CNT/MEH-PPV thin film","authors":"M. Sarah, M. Musa, A. Suriani, N. Jumali, Z. Shaameri, A. S. Hamzah, M. Rusop","doi":"10.1109/SMELEC.2010.5549572","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549572","url":null,"abstract":"Spin coating method is used to deposit nanocomposite CNT/MEH-PPV thin film on a glass substrate. The MEH-PPV which is in powder form was weighted and then dissolved into THF. Then, a certain amount of CNTs were added to the MEH-PPV solution. It is then stirred for 3 hours and sonicated for 1 hour to ensure that CNTs is well dispersed in the MEH-PPV solution. The addition of CNTs in the MEH-PPV solution yields a nanocomposite CNT/MEH-PPV solution. The characterization done was to evaluate the conductance as well as the absorption. The conductance and absorption of the nanocomposite showed an increment in value due to the existence of the CNTs.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"61 34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134024653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549565
Sri Nengsih, A. Umar, M. Salleh, M. Yahaya
This paper reports the study of the localized surface plasmon resonance (LSPR) characteristic of the gold nanoparticle-cytochrome c hybrid thin film to detect the presence of nitric oxide (NO) gas. For the fabrications of gold nanoparticles ensemble on the surface, the seed mediated growth method was used. The cytochrome C (cyt c) thin film on gold nanoparticles was prepared using the spin coating technique. Detection of gas was based on the change in the LSPR of gold nanoparticle modified cytocrome C film upon exposure to the gas sample. It was found that the SPR peak of absorbance spectrum of gold nanoparticle-cyt c film was decreased when the NO gas flowed into the sensor chamber. The mechanism for detection of NO's gas will be discussed in this paper.
{"title":"Localized surface plasmon resonance of gold nanoparticle-cytocrome C to detect the presence of nitric oxide gas","authors":"Sri Nengsih, A. Umar, M. Salleh, M. Yahaya","doi":"10.1109/SMELEC.2010.5549565","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549565","url":null,"abstract":"This paper reports the study of the localized surface plasmon resonance (LSPR) characteristic of the gold nanoparticle-cytochrome c hybrid thin film to detect the presence of nitric oxide (NO) gas. For the fabrications of gold nanoparticles ensemble on the surface, the seed mediated growth method was used. The cytochrome C (cyt c) thin film on gold nanoparticles was prepared using the spin coating technique. Detection of gas was based on the change in the LSPR of gold nanoparticle modified cytocrome C film upon exposure to the gas sample. It was found that the SPR peak of absorbance spectrum of gold nanoparticle-cyt c film was decreased when the NO gas flowed into the sensor chamber. The mechanism for detection of NO's gas will be discussed in this paper.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129696850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549350
K. Omar, N. Soin, W. Mahadi, Hassan Malik
This paper presents a lithium-ion battery recharging circuit with an improved charger system topology for portable devices and handheld gadgets. The proposed charger topology uses an operational amplifier with NMOS input for a smooth transition between current control loop and voltage control loop and to control a power pass element device. Using the above-mentioned abilities, a complete charging process, consisting of three sub-processes; automatically trickle charge, constant current and constant voltage mode are implemented. In the proposed new charger system topology, the charging behaviors of the Li-ion battery can achieve a better charging performance and terminated automatically when fully charged. Simulation results show that the power pass element channel width is 40,000 µm which is less 60% from others design, is able to carry out the output voltage of 4.2 V, the maximum charging current reaches 1 A and the trickle charge is 10% of constant current. The new charger topology has been implemented using 0.18µm CMOS process. Experimental result shows that the new charger design topology agrees with the charging behaviors from simulation results.
{"title":"A new charger system approach: The current and voltage control loops","authors":"K. Omar, N. Soin, W. Mahadi, Hassan Malik","doi":"10.1109/SMELEC.2010.5549350","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549350","url":null,"abstract":"This paper presents a lithium-ion battery recharging circuit with an improved charger system topology for portable devices and handheld gadgets. The proposed charger topology uses an operational amplifier with NMOS input for a smooth transition between current control loop and voltage control loop and to control a power pass element device. Using the above-mentioned abilities, a complete charging process, consisting of three sub-processes; automatically trickle charge, constant current and constant voltage mode are implemented. In the proposed new charger system topology, the charging behaviors of the Li-ion battery can achieve a better charging performance and terminated automatically when fully charged. Simulation results show that the power pass element channel width is 40,000 µm which is less 60% from others design, is able to carry out the output voltage of 4.2 V, the maximum charging current reaches 1 A and the trickle charge is 10% of constant current. The new charger topology has been implemented using 0.18µm CMOS process. Experimental result shows that the new charger design topology agrees with the charging behaviors from simulation results.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123199851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549561
H. Sarvari, R. Ghayour
In this paper, based on the simple Pz orbital model, the energy diagram of armchair and zigzag graphene nanoribbons (A-GNR & Z-GNR) are studied by considering the first and third nearest neighbors (FNN & TNN). Then, we applied the Non-Equilibrium Green Function method to calculate the conduction in A-GNR. Thereafter, we analyzed the single gated GNRFET in real space provided that under any Vgs the energy of all the atoms within the channel remains the same (qVgs) and consequently, solving Poisson's equation is not needed anymore. The numerical calculation of the self-energy matrices is done based on two approaches, where the same result is obtained but different CPU times consumed. Therefore, one of the advantages of our approach is considerably lower consuming time of calculation. The number of atoms across the width of the channel nanoribbon is chosen so that the channel behaves as a semiconductor. However, for the reservoirs (source and drain) the number of atoms within their widths makes them metallic ribbons. The results of applying TNN in comparison with those of FNN show that TNN is more accurate and reliable. Finally, we can conclude that in A-GNRFET tunneling component of the current from reservoir to the channel is significant.
{"title":"A fast method to analyze and characterize the graphene nanoribbon FET by non-equilibrium Green's function","authors":"H. Sarvari, R. Ghayour","doi":"10.1109/SMELEC.2010.5549561","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549561","url":null,"abstract":"In this paper, based on the simple Pz orbital model, the energy diagram of armchair and zigzag graphene nanoribbons (A-GNR & Z-GNR) are studied by considering the first and third nearest neighbors (FNN & TNN). Then, we applied the Non-Equilibrium Green Function method to calculate the conduction in A-GNR. Thereafter, we analyzed the single gated GNRFET in real space provided that under any Vgs the energy of all the atoms within the channel remains the same (qVgs) and consequently, solving Poisson's equation is not needed anymore. The numerical calculation of the self-energy matrices is done based on two approaches, where the same result is obtained but different CPU times consumed. Therefore, one of the advantages of our approach is considerably lower consuming time of calculation. The number of atoms across the width of the channel nanoribbon is chosen so that the channel behaves as a semiconductor. However, for the reservoirs (source and drain) the number of atoms within their widths makes them metallic ribbons. The results of applying TNN in comparison with those of FNN show that TNN is more accurate and reliable. Finally, we can conclude that in A-GNRFET tunneling component of the current from reservoir to the channel is significant.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116757895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549510
B. Mardiana, H. Hazura, A. Hanim, P. Menon, H. Abdullah
This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. Summarily, the phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode.
{"title":"Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide","authors":"B. Mardiana, H. Hazura, A. Hanim, P. Menon, H. Abdullah","doi":"10.1109/SMELEC.2010.5549510","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549510","url":null,"abstract":"This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. Summarily, the phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114666049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549361
A. R. Kermany, N. M. Mohamed, B. Singh
Current gas sensors are mainly categorized into two modes of operation; chemical type operating by gas adsorption and physical type using ionization method. Chemical type conductivity-based gas detectors are large in size, they operate at high temperatures, and their response time is slow. Moreover most of them are only capable of detecting single type gases due to their low selectivity. Physical type ionization-based sensors have better selectivity and response time, but they are still huge and bulky. Both chemical and physical type gas detectors are using semiconductor materials as their sensing elements. With the discovery of nanomaterials, different types of sensing elements have been investigated to produce gas sensors which are smaller in size, one of which is carbon nanotubes (CNTs). Development of high performance sensor is now focused towards CNT-based sensors because of their inherent properties such as small size, large surface area and high electrical conductivity. CNTs based sensors are smaller in size; they have lower power consumption, higher sensitivity and better selectivity compared to existing semiconducting gas sensors. CNT-based gas sensors operate in room temperature which will result in safer environment. The work investigates the structural and electrical characterization of carbon nanotubes array for suitability as an effective sensing element in the ionization-based gas sensor.
{"title":"Ionization-based gas sensor using aligned MWCNTs array","authors":"A. R. Kermany, N. M. Mohamed, B. Singh","doi":"10.1109/SMELEC.2010.5549361","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549361","url":null,"abstract":"Current gas sensors are mainly categorized into two modes of operation; chemical type operating by gas adsorption and physical type using ionization method. Chemical type conductivity-based gas detectors are large in size, they operate at high temperatures, and their response time is slow. Moreover most of them are only capable of detecting single type gases due to their low selectivity. Physical type ionization-based sensors have better selectivity and response time, but they are still huge and bulky. Both chemical and physical type gas detectors are using semiconductor materials as their sensing elements. With the discovery of nanomaterials, different types of sensing elements have been investigated to produce gas sensors which are smaller in size, one of which is carbon nanotubes (CNTs). Development of high performance sensor is now focused towards CNT-based sensors because of their inherent properties such as small size, large surface area and high electrical conductivity. CNTs based sensors are smaller in size; they have lower power consumption, higher sensitivity and better selectivity compared to existing semiconducting gas sensors. CNT-based gas sensors operate in room temperature which will result in safer environment. The work investigates the structural and electrical characterization of carbon nanotubes array for suitability as an effective sensing element in the ionization-based gas sensor.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130982458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549462
Wan Zurina Samad, M. Salleh, A. Shafiee, M. Yarmo
FTO thin films were successfully prepared by inkjet printing technique. FTO precursor was prepared by reacting SnCl4.5H2O and NH4F at 60°C in a sealed container. The number of layers was set up from two to five layers on the glass substrate and was deposited at room temperature around 25 to 27° C, 40° C and 60° C to determine the optimum properties for thin films performance. Morphology analysis study using VP-SEM shows the existence of fine grains with the size ranging 20 to 30 nm and the existence of crystal shape with the increases of deposition temperature. Fluorine concentration in the thin films determined from XPS analysis shows the ratio of[F]/[Sn] at 0.02 with the Sn d5/2 Sn 4+, O1s as O2-, and F1s as Sn-F bond peaks at binding energy 486.6 eV, 530.5 eV and 684.4 eV. The optical transmittance analysis showed the deposition temperature improved the optical transmittance; 60% T at ambient to 80% T at 60° C. The optimum optical transmittance was 91% T for the thin film deposited at 40° C. The sheet resistances were 16 Ω/□, 21 Ω/□ 23 Ω/□ for the thin film deposited at 40° C, ambient temperature and 60° C.
采用喷墨打印技术成功制备了FTO薄膜。采用SnCl4.5H2O和NH4F在60℃密闭容器中反应制备FTO前驱体。在玻璃基板上设置两层至五层的层数，并在室温下分别在25至27°C, 40°C和60°C沉积，以确定薄膜的最佳性能。利用VP-SEM进行形貌分析研究表明，随着沉积温度的升高，合金中存在20 ~ 30 nm大小的细小晶粒，并存在晶体形状。薄膜中氟浓度的XPS分析表明[F]/[Sn]比值为0.02,Sn d /2 Sn 4+， O1s为O2-， F1s为Sn-F键，结合能分别为486.6 eV, 530.5 eV和684.4 eV。光透过率分析表明，沉积温度提高了光透过率;60℃环境温度下60% T ~ 80% T, 40℃沉积薄膜的最佳透过率为91% T, 40℃、环境温度和60℃沉积薄膜的片电阻分别为16 Ω/□，21 Ω/□23 Ω/□。
{"title":"Transparent conducting thin films of fluoro doped tin oxide (FTO) deposited using inkjet printing technique","authors":"Wan Zurina Samad, M. Salleh, A. Shafiee, M. Yarmo","doi":"10.1109/SMELEC.2010.5549462","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549462","url":null,"abstract":"FTO thin films were successfully prepared by inkjet printing technique. FTO precursor was prepared by reacting SnCl<inf>4</inf>.5H<inf>2</inf>O and NH<inf>4</inf>F at 60°C in a sealed container. The number of layers was set up from two to five layers on the glass substrate and was deposited at room temperature around 25 to 27° C, 40° C and 60° C to determine the optimum properties for thin films performance. Morphology analysis study using VP-SEM shows the existence of fine grains with the size ranging 20 to 30 nm and the existence of crystal shape with the increases of deposition temperature. Fluorine concentration in the thin films determined from XPS analysis shows the ratio of[F]/[Sn] at 0.02 with the Sn d<inf>5/2</inf> Sn 4+, O<inf>1s</inf> as O<sup>2-</sup>, and F1s as Sn-F bond peaks at binding energy 486.6 eV, 530.5 eV and 684.4 eV. The optical transmittance analysis showed the deposition temperature improved the optical transmittance; 60% T at ambient to 80% T at 60° C. The optimum optical transmittance was 91% T for the thin film deposited at 40° C. The sheet resistances were 16 Ω/□, 21 Ω/□ 23 Ω/□ for the thin film deposited at 40° C, ambient temperature and 60° C.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122554991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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