Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549498
Jian-Wei Hoon, Kah-Yoong Chan, Jegenathan Krishnasamy, S. Kamaruddin, H. Wong, T. Tou
This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical properties of the WSi films are inferior at high deposition pressure and high substrate temperature.
{"title":"Electrical properties of sputtered deposited tungsten silicide films","authors":"Jian-Wei Hoon, Kah-Yoong Chan, Jegenathan Krishnasamy, S. Kamaruddin, H. Wong, T. Tou","doi":"10.1109/SMELEC.2010.5549498","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549498","url":null,"abstract":"This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical properties of the WSi films are inferior at high deposition pressure and high substrate temperature.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132860468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549505
J. Toompuu, O. Korolkov, N. Sleptsuk, V. Vojtovich, T. Rang
The determination of technical requirements for GaAs epistructures intended for high voltage diode stacks has been made. The suitable doping level of p+ substrate was estimated by the contact resistance measurements. Analysis has shown that for the p+ substrates with the current densities about 0.5-1 A/cm2 the specific contact resistance depends weakly on doping concentration (at least in the range from 5x1018 to 1x1019cm–3). The I-V measurements showed that Al/p+−pin contacts for n-layer concentration 1x1015cm–3 have lock-type barrier causing very high voltage drops in diode stacks. For p+−pin−n+ structures the forward voltage drop depends on doping level as well as on epilayer thickness. The reverse voltage depends on pin-layer thickness only. It was found that for diode stacks the suitable doping for p+ substrate is about 5x1018cm–3 and n+ layer doping in epitaxial p+−pin−n+ GaAs structures concentration must be higher than 1x1018 cm3.
{"title":"GaAs based diffusion welded high voltage diode stacks","authors":"J. Toompuu, O. Korolkov, N. Sleptsuk, V. Vojtovich, T. Rang","doi":"10.1109/SMELEC.2010.5549505","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549505","url":null,"abstract":"The determination of technical requirements for GaAs epistructures intended for high voltage diode stacks has been made. The suitable doping level of p+ substrate was estimated by the contact resistance measurements. Analysis has shown that for the p+ substrates with the current densities about 0.5-1 A/cm2 the specific contact resistance depends weakly on doping concentration (at least in the range from 5x1018 to 1x1019cm–3). The I-V measurements showed that Al/p+−pin contacts for n-layer concentration 1x1015cm–3 have lock-type barrier causing very high voltage drops in diode stacks. For p+−pin−n+ structures the forward voltage drop depends on doping level as well as on epilayer thickness. The reverse voltage depends on pin-layer thickness only. It was found that for diode stacks the suitable doping for p+ substrate is about 5x1018cm–3 and n+ layer doping in epitaxial p+−pin−n+ GaAs structures concentration must be higher than 1x1018 cm3.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117274750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549352
M. N. Abdullah, A. Ehsan, M. N. Z. Abidin, A. Rashid, Z. Abidin
An experimental coordination was developed to evaluate Four Wave Mixing (FWM) progression. A 20 m photonic crystal fibre (PCF) zero dispersion at 1040 nm and a set of Fibre Bragg Gratings are engaged to stimulate pumped signals endow with FWM phenomenon. The set of FBGs consist three types of FBGs; A (1532.89 nm & reflectivity 88.4%), B (1530.47 nm & reflectivity 89.9%) & C(1535.04 nm & reflectivity 92.4%).
{"title":"Stimulation effect of FBGs en route four wave mixing constructions exploiting photonic crystal fibre presents","authors":"M. N. Abdullah, A. Ehsan, M. N. Z. Abidin, A. Rashid, Z. Abidin","doi":"10.1109/SMELEC.2010.5549352","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549352","url":null,"abstract":"An experimental coordination was developed to evaluate Four Wave Mixing (FWM) progression. A 20 m photonic crystal fibre (PCF) zero dispersion at 1040 nm and a set of Fibre Bragg Gratings are engaged to stimulate pumped signals endow with FWM phenomenon. The set of FBGs consist three types of FBGs; A (1532.89 nm & reflectivity 88.4%), B (1530.47 nm & reflectivity 89.9%) & C(1535.04 nm & reflectivity 92.4%).","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127832114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549362
N. A. Bakar, A. Umar, M. Salleh, M. Yahaya
Quantum dots (QDs) thin film sensor was developed to detect fungicide in water by optical sensing system. The ZnCdSe QDs was synthesized using a wet-chemical process to apply in this fluorescent sensor. A sensor system was setup, comprises an excitation light source made of laser diode, a dual arm fiber optic probe, a spectrometer and sensor chamber. The QDs thin film was deposited by dropping QDs solution onto the probe surface and let them dried in the ambient temperature. The detection of fungicide was done by comparing the photoluminescence (PL) spectra of the thin film dipped in the deionised water and in fungicide solutions. The PL spectrum of the thin film was quenched by the presence fungicide solutions where the drop of PL peak intensity is depended on the concentration of fungicide solutions.
{"title":"Detection of fungicide in water by ZnCdSe quantum dots thin film","authors":"N. A. Bakar, A. Umar, M. Salleh, M. Yahaya","doi":"10.1109/SMELEC.2010.5549362","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549362","url":null,"abstract":"Quantum dots (QDs) thin film sensor was developed to detect fungicide in water by optical sensing system. The ZnCdSe QDs was synthesized using a wet-chemical process to apply in this fluorescent sensor. A sensor system was setup, comprises an excitation light source made of laser diode, a dual arm fiber optic probe, a spectrometer and sensor chamber. The QDs thin film was deposited by dropping QDs solution onto the probe surface and let them dried in the ambient temperature. The detection of fungicide was done by comparing the photoluminescence (PL) spectra of the thin film dipped in the deionised water and in fungicide solutions. The PL spectrum of the thin film was quenched by the presence fungicide solutions where the drop of PL peak intensity is depended on the concentration of fungicide solutions.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"415 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132136595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549351
P. Menon, K. Kumarajah, B. Bais, H. Abdullah, B. Majlis, P. Apte
Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages over the traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fiber coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expands. This paper reports the optimization of the peak lasing power and peak lasing wavelength of a LW-VCSEL using a numerical-based simulator and Taguchi's orthogonal array methodology. Initially, peak lasing power increment of 96.5% was achieved at 9.51 mW with peak wavelength of 1.55956 µm. Next, we attempted to bring the peak wavelength on target to 1.55 µm. It was found that a reduction of DBR mirror thicknesses by 1.3% from its nominal values is able to produce a device with lasing powers of 11.62 mW and on-target peak wavelength of 1.55 µm.
{"title":"Peak power and wavelength optimization of a double-fused LW-VCSEL","authors":"P. Menon, K. Kumarajah, B. Bais, H. Abdullah, B. Majlis, P. Apte","doi":"10.1109/SMELEC.2010.5549351","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549351","url":null,"abstract":"Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages over the traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fiber coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expands. This paper reports the optimization of the peak lasing power and peak lasing wavelength of a LW-VCSEL using a numerical-based simulator and Taguchi's orthogonal array methodology. Initially, peak lasing power increment of 96.5% was achieved at 9.51 mW with peak wavelength of 1.55956 µm. Next, we attempted to bring the peak wavelength on target to 1.55 µm. It was found that a reduction of DBR mirror thicknesses by 1.3% from its nominal values is able to produce a device with lasing powers of 11.62 mW and on-target peak wavelength of 1.55 µm.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"46 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120821593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549400
T. Bhuvaneswari, V. Prasad, A. Singh
Binary Decision Diagrams (BDDs) are the most frequently used data structure for handling Boolean functions because of their excellent efficiency in terms of time and space. Algebraic Decision Diagrams (ADDs) have been used to solve general purpose problems such as Matrix Multiplication, logic synthesis and Formal Verification. We propose a Multiple BDD based Matrix Multiplication and compare the performance with ADD and WBDD based matrix multiplication. The results of the proposed method are promising and can be applied to other matrix related problems.
{"title":"Multiple BDD based matrix multiplication","authors":"T. Bhuvaneswari, V. Prasad, A. Singh","doi":"10.1109/SMELEC.2010.5549400","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549400","url":null,"abstract":"Binary Decision Diagrams (BDDs) are the most frequently used data structure for handling Boolean functions because of their excellent efficiency in terms of time and space. Algebraic Decision Diagrams (ADDs) have been used to solve general purpose problems such as Matrix Multiplication, logic synthesis and Formal Verification. We propose a Multiple BDD based Matrix Multiplication and compare the performance with ADD and WBDD based matrix multiplication. The results of the proposed method are promising and can be applied to other matrix related problems.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116706237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-01DOI: 10.1109/SMELEC.2010.5549368
A. Manut, A. Zoolfakar, K. Kharuddin, M. Zolkapli, A. A. Abdul Aziz
In this paper, we present a design and simulation results of MEMS gyroscope using drive and sense electrode's voltage control to tune wide range resonance frequency that may yield robust vibratory MEMS gyroscope and at the same time retains the wide range of bandwidth. The design is of symmetrical shape for the proofmass and the branch-finger actuators. Branchfinger actuators in both drive and sense's mode also acted as stiffness tuner. Flexure shapes, although not exactly symmetrical, give us equal spring's constant in both x- and y- directions resulting in a matching resonance frequency. By properly arranging the voltage of drive and sense electrodes, we can have distributed drive-mode resonance frequency to overcome the sense-mode response shift due to changes of system parameters (e.g: fabrication imperfection or operating conditions). The capacitance in the sensing direction is measured between the perforated proofmass and perforated electrode plate underneath. From the simulation results we found out that the maximum range of bandwidth for the design is 358 Hz. Although we only varies the beam length, the experiment had shown that the design can give alternative to control mode mismatch.
{"title":"Design of MEMS gyroscope for wide range resonance frequency adjustment","authors":"A. Manut, A. Zoolfakar, K. Kharuddin, M. Zolkapli, A. A. Abdul Aziz","doi":"10.1109/SMELEC.2010.5549368","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549368","url":null,"abstract":"In this paper, we present a design and simulation results of MEMS gyroscope using drive and sense electrode's voltage control to tune wide range resonance frequency that may yield robust vibratory MEMS gyroscope and at the same time retains the wide range of bandwidth. The design is of symmetrical shape for the proofmass and the branch-finger actuators. Branchfinger actuators in both drive and sense's mode also acted as stiffness tuner. Flexure shapes, although not exactly symmetrical, give us equal spring's constant in both x- and y- directions resulting in a matching resonance frequency. By properly arranging the voltage of drive and sense electrodes, we can have distributed drive-mode resonance frequency to overcome the sense-mode response shift due to changes of system parameters (e.g: fabrication imperfection or operating conditions). The capacitance in the sensing direction is measured between the perforated proofmass and perforated electrode plate underneath. From the simulation results we found out that the maximum range of bandwidth for the design is 358 Hz. Although we only varies the beam length, the experiment had shown that the design can give alternative to control mode mismatch.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122772202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/smelec.2010.5549509
{"title":"Message from chair of ED chapter, IEEE Malaysia section (co-chair ICSE2010)","authors":"","doi":"10.1109/smelec.2010.5549509","DOIUrl":"https://doi.org/10.1109/smelec.2010.5549509","url":null,"abstract":"","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132470920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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