Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549376
M. Alqahtani, W. Mahadi, T. F. Tengkumohmed
In this paper, we proposed Inverted-F Antenna concept. We design a novel antenna that resonates at two different frequencies. Using only a single layer and single feed, the antenna operates at lower frequency of 1.4 GHz and at higher frequency of 3.2 GHz. The results obtained were acceptable in terms of return loss (RL), bandwidth, radiation pattern and gain. IFAs are suitable for wireless communication systems, and their structure is very simple. IFAs are low profile antennas, and it is printed type of antenna. In this research, the commercial software Computer Simulation Technology and High Frequency Structure Simulation (HFSS) were used to design the antenna and validate the results. The proposed antenna shows better performance than many existing systems.
{"title":"Design of multi band antenna for wireless communication","authors":"M. Alqahtani, W. Mahadi, T. F. Tengkumohmed","doi":"10.1109/SMELEC.2010.5549376","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549376","url":null,"abstract":"In this paper, we proposed Inverted-F Antenna concept. We design a novel antenna that resonates at two different frequencies. Using only a single layer and single feed, the antenna operates at lower frequency of 1.4 GHz and at higher frequency of 3.2 GHz. The results obtained were acceptable in terms of return loss (RL), bandwidth, radiation pattern and gain. IFAs are suitable for wireless communication systems, and their structure is very simple. IFAs are low profile antennas, and it is printed type of antenna. In this research, the commercial software Computer Simulation Technology and High Frequency Structure Simulation (HFSS) were used to design the antenna and validate the results. The proposed antenna shows better performance than many existing systems.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127187240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549399
New Chin-Ee, N. Soin
The advancement of semiconductor industry has led to continuously increasing level of integration. Due to this and driven by shorter time-to-market and product life cycle, the industry has migrated into SoC paradigm. NoC is viewed as a practical solution for SoC interconnection due to its reusability and scalability. Existing NoC designs are mainly based on packet switching. However, packet switching NoC requires significant buffering resources, which consumes silicon area and power. An alternative to packet switching is circuit switching based NoC. In this paper, a circuit switched network protocol and NoC design had been proposed and evaluated both qualitatively and quantitatively. Simulations were performed to measure and compare the performance of both NoCs to determine the viability of CNoC as on-chip interconnection solution.
{"title":"Qualitative and quantitative evaluation of a proposed circuit switched network-on-chip","authors":"New Chin-Ee, N. Soin","doi":"10.1109/SMELEC.2010.5549399","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549399","url":null,"abstract":"The advancement of semiconductor industry has led to continuously increasing level of integration. Due to this and driven by shorter time-to-market and product life cycle, the industry has migrated into SoC paradigm. NoC is viewed as a practical solution for SoC interconnection due to its reusability and scalability. Existing NoC designs are mainly based on packet switching. However, packet switching NoC requires significant buffering resources, which consumes silicon area and power. An alternative to packet switching is circuit switching based NoC. In this paper, a circuit switched network protocol and NoC design had been proposed and evaluated both qualitatively and quantitatively. Simulations were performed to measure and compare the performance of both NoCs to determine the viability of CNoC as on-chip interconnection solution.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127403815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549385
K. Packamwongsang, S. Noppanakeepong
This research studied the characteristic of electrical properties of E. sanguinea by evaluation of complex impedance and complex permittivity. Apply Cole-Cole plot technique to explain the behavior of RC impedance form simulation and measurement. The objective of this study was to build up a new electrical equivalent circuit model from RC circuit model of E. sanguinea with MLEMF. The results revealed that there were a correlation between impedance from measurement and simulation with correlation value equal to 0.83 at 95% confidence interval. The RC impedance of E. sanguinea of each chemical component, i.e., protein, chlorophyll, carbohydrate, lipid and phosphorus was behavioral in semicircle varied to frequency which give the correlation with complex permittivity. The model can be used for design of water supply system by MLEMF for treating algae bloom water. This is an innovative electric simulation applicable to the electric engineering and other related fields of study.
{"title":"Electrical equivalent circuit model and impedance of euglena sanguinea stimulated by multi-level electromagnetic fields","authors":"K. Packamwongsang, S. Noppanakeepong","doi":"10.1109/SMELEC.2010.5549385","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549385","url":null,"abstract":"This research studied the characteristic of electrical properties of E. sanguinea by evaluation of complex impedance and complex permittivity. Apply Cole-Cole plot technique to explain the behavior of RC impedance form simulation and measurement. The objective of this study was to build up a new electrical equivalent circuit model from RC circuit model of E. sanguinea with MLEMF. The results revealed that there were a correlation between impedance from measurement and simulation with correlation value equal to 0.83 at 95% confidence interval. The RC impedance of E. sanguinea of each chemical component, i.e., protein, chlorophyll, carbohydrate, lipid and phosphorus was behavioral in semicircle varied to frequency which give the correlation with complex permittivity. The model can be used for design of water supply system by MLEMF for treating algae bloom water. This is an innovative electric simulation applicable to the electric engineering and other related fields of study.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121468448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549531
S. Kamaruddin, M. Z. Sahdan, Kah-Yoong Chan, H. Yow, Jian-Wei Hoon, M. Mahmood, H. Saim
Zinc oxide (ZnO) is an emerging material in large area electronic applications such as thin-film solar cells and transistors. We report on the fabrication and characterization of ZnO nanostructures. ZnO nanostructures have been synthesized using sol-gel immerse technique on oxidized silicon substrates. Different precursor's concentrations ranging from 0.0001 M to 0.01 M (M=molarity) using zinc nitrate hexahydrate [Zn(NO3)2.6H2O] and hexamethylenetetramine [C6H12N4] were employed in the synthesis of the ZnO nanostructures. The surface morphologies were examined using scanning electron microscope (SEM) and the structural properties were measured using X-ray diffractometer (XRD). In order to investigate the optical properties, the ZnO nanostructures were measured using ultraviolet-visible (UV-Vis) spectroscopy. The electrical properties of the ZnO nanostructures were characterized using current-voltage (I-V) measurement system.
氧化锌(ZnO)是一种应用于薄膜太阳能电池和晶体管等大面积电子领域的新兴材料。我们报道了氧化锌纳米结构的制备和表征。采用溶胶-凝胶浸渍技术在氧化硅衬底上合成了ZnO纳米结构。以六水合硝酸锌[Zn(NO3)2.6H2O]和六亚甲基四胺[C6H12N4]为原料，采用浓度为0.0001 M ~ 0.01 M (M=摩尔浓度)的前驱体制备ZnO纳米结构。用扫描电子显微镜(SEM)观察了表面形貌，并用x射线衍射仪(XRD)测量了结构性能。为了研究ZnO的光学性质，采用紫外-可见(UV-Vis)光谱对ZnO的纳米结构进行了测量。采用电流-电压(I-V)测量系统对ZnO纳米结构的电学性能进行了表征。
{"title":"Microfabrication of ZnO structures using sol-gel immerse technique","authors":"S. Kamaruddin, M. Z. Sahdan, Kah-Yoong Chan, H. Yow, Jian-Wei Hoon, M. Mahmood, H. Saim","doi":"10.1109/SMELEC.2010.5549531","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549531","url":null,"abstract":"Zinc oxide (ZnO) is an emerging material in large area electronic applications such as thin-film solar cells and transistors. We report on the fabrication and characterization of ZnO nanostructures. ZnO nanostructures have been synthesized using sol-gel immerse technique on oxidized silicon substrates. Different precursor's concentrations ranging from 0.0001 M to 0.01 M (M=molarity) using zinc nitrate hexahydrate [Zn(NO3)2.6H2O] and hexamethylenetetramine [C6H12N4] were employed in the synthesis of the ZnO nanostructures. The surface morphologies were examined using scanning electron microscope (SEM) and the structural properties were measured using X-ray diffractometer (XRD). In order to investigate the optical properties, the ZnO nanostructures were measured using ultraviolet-visible (UV-Vis) spectroscopy. The electrical properties of the ZnO nanostructures were characterized using current-voltage (I-V) measurement system.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132493166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549424
Abdul Aziz A, N. Soin
This paper presents the dependency of threshold voltage (Vth) on the floating gate (FG) and nitride thickness in inter-polysilicon dielectric (IPD) layer for the nonvolatile memory devices (NVM). The 1.2 um n-type FG device with n+ polysilicon gate were simulated using SILVACO TCAD to measure the drain current versus control gate voltage (ID−VCG), where the FG and nitride thickness were varies from 0.1um to 0.35 um and 0.01um to 0.05um respectively. The analysis of programming and erase operation of NVM characteristics are presented, and floating gate charge can be obtained from transient simulation. It was concluded that ID−VCG curve shifts rightward to the positive higher Vth when FG and nitride thickness increase respectively. This is due to the electrical charging of FG in this state. The charge stored in the FG makes its potential higher.
{"title":"Dependency of threshold voltage on floating gate and inter-polysilicon dielectric thickness for nonvolatile memory devices","authors":"Abdul Aziz A, N. Soin","doi":"10.1109/SMELEC.2010.5549424","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549424","url":null,"abstract":"This paper presents the dependency of threshold voltage (Vth) on the floating gate (FG) and nitride thickness in inter-polysilicon dielectric (IPD) layer for the nonvolatile memory devices (NVM). The 1.2 um n-type FG device with n+ polysilicon gate were simulated using SILVACO TCAD to measure the drain current versus control gate voltage (ID−VCG), where the FG and nitride thickness were varies from 0.1um to 0.35 um and 0.01um to 0.05um respectively. The analysis of programming and erase operation of NVM characteristics are presented, and floating gate charge can be obtained from transient simulation. It was concluded that ID−VCG curve shifts rightward to the positive higher Vth when FG and nitride thickness increase respectively. This is due to the electrical charging of FG in this state. The charge stored in the FG makes its potential higher.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126817179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549532
I. Saad, M. Riyadi, Zul Atfyi F. M. N., A. Hamid, R. Ismail
An enhanced performance of vertical double gate MOSFET (VDGM) structure was revealed by adopting the oblique rotating ion implantation (ORI) method. The device structure was simulated based on TCAD tools and verified by good matching data with the published experimental results. With ORI method a symmetrical self-aligned source/drain regions over the silicon pillar and sharp vertical channel profile was observed. With Lg = 50nm, the VT is 0.96V in double gate and increased to 1.2V in single gate structure. The sub threshold swing, S = 81.9 mV/dec and S = 87.7 mV/dec were obtained for double and single gate devices respectively. Similarly, large IDsat = 370µA/µm was observed for double gate compared to single gate device. By scaling the Lg into 50nm, the VT remains almost the same when the Lg is larger than 80nm. However, it decreases rapidly when scaled down to 50nm. The leakage current increases rapidly when the Lg is scaled down to 100nm and beyond. However, the ratio of ION – IOFF is seen to be increases even with shorter Lg. These results indicates that ORI method is essential for overcoming various SCE as scaling the channel length down to nanometer regime.
{"title":"Enhanced performance of vertical double gate MOSFET (VDGM) with oblique rotating implantation (ORI) method","authors":"I. Saad, M. Riyadi, Zul Atfyi F. M. N., A. Hamid, R. Ismail","doi":"10.1109/SMELEC.2010.5549532","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549532","url":null,"abstract":"An enhanced performance of vertical double gate MOSFET (VDGM) structure was revealed by adopting the oblique rotating ion implantation (ORI) method. The device structure was simulated based on TCAD tools and verified by good matching data with the published experimental results. With ORI method a symmetrical self-aligned source/drain regions over the silicon pillar and sharp vertical channel profile was observed. With L<inf>g</inf> = 50nm, the V<inf>T</inf> is 0.96V in double gate and increased to 1.2V in single gate structure. The sub threshold swing, S = 81.9 mV/dec and S = 87.7 mV/dec were obtained for double and single gate devices respectively. Similarly, large I<inf>Dsat</inf> = 370µA/µm was observed for double gate compared to single gate device. By scaling the L<inf>g</inf> into 50nm, the V<inf>T</inf> remains almost the same when the L<inf>g</inf> is larger than 80nm. However, it decreases rapidly when scaled down to 50nm. The leakage current increases rapidly when the L<inf>g</inf> is scaled down to 100nm and beyond. However, the ratio of I<inf>ON</inf> – I<inf>OFF</inf> is seen to be increases even with shorter L<inf>g</inf>. These results indicates that ORI method is essential for overcoming various SCE as scaling the channel length down to nanometer regime.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123273563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549430
A. Rashid, P. S. Menon
Undoped and Mn doped ZnO films with different doping concentration were synthesized by sol gel method using a spin coating technique. Zn1−xMnxO thin films are prepared using 2-methoxyethanol solution of zinc acetate dehydrate and manganese acetate tetrahydrate. The solution was stabilized by MEA. The quantity of Mn in the sol was varied from x = 0, 0.02 and 0.04 with annealing temperature of 700°C. The samples were characterized using AFM to investigate the surface morphology and nanostructures. The XRD analysis shows the crystalline structure and orientation of the films. The films exhibit hexagonal wurtzite structure and improved crystalline quality by increasing the Mn doping. Meanwhile, the optical properties were characterized using UV-Vis where the transmittance and band gap decreases upon increment of Mn concentration.
{"title":"Effect of Mn doping on the structural and optical properties of ZnO films","authors":"A. Rashid, P. S. Menon","doi":"10.1109/SMELEC.2010.5549430","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549430","url":null,"abstract":"Undoped and Mn doped ZnO films with different doping concentration were synthesized by sol gel method using a spin coating technique. Zn1−xMnxO thin films are prepared using 2-methoxyethanol solution of zinc acetate dehydrate and manganese acetate tetrahydrate. The solution was stabilized by MEA. The quantity of Mn in the sol was varied from x = 0, 0.02 and 0.04 with annealing temperature of 700°C. The samples were characterized using AFM to investigate the surface morphology and nanostructures. The XRD analysis shows the crystalline structure and orientation of the films. The films exhibit hexagonal wurtzite structure and improved crystalline quality by increasing the Mn doping. Meanwhile, the optical properties were characterized using UV-Vis where the transmittance and band gap decreases upon increment of Mn concentration.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114115429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549379
W. Mahadi, N. M. Ali, Quek Pei Wen
Wireless communication technologies and devices based on radio frequency (RF) field propagation are fast expanding in this information era. In this industry, radio propagation models are useful in the designing phase of radio systems and network. The rapid development in the telecommunication industry also means an increase in communication towers in the surrounding environment. This has also created awareness among the public on health effects from the exposure of radio frequency electromagnetic field from such towers. Hence, there are ongoing studies regarding the RF-EMF exposure levels surrounding communication towers. This paper involves the measurement of the field strengths taken from four communication towers and the trend of the signal strength received was analysed.
{"title":"Evaluation of RF EMF exposure pattern on selected communication towers in Malaysia","authors":"W. Mahadi, N. M. Ali, Quek Pei Wen","doi":"10.1109/SMELEC.2010.5549379","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549379","url":null,"abstract":"Wireless communication technologies and devices based on radio frequency (RF) field propagation are fast expanding in this information era. In this industry, radio propagation models are useful in the designing phase of radio systems and network. The rapid development in the telecommunication industry also means an increase in communication towers in the surrounding environment. This has also created awareness among the public on health effects from the exposure of radio frequency electromagnetic field from such towers. Hence, there are ongoing studies regarding the RF-EMF exposure levels surrounding communication towers. This paper involves the measurement of the field strengths taken from four communication towers and the trend of the signal strength received was analysed.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114791537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549502
R. Sidek, F. Yusof, F. M. Yasin, R. Wagiran, F. Ahmadun
This paper presents the electrical response of Multi-Walled Carbon Nanotube (MWCNT) towards the presence of gases at room temperature. The preparation of MWCNT and the experimental setup are also discussed. The resistance of MWCNT elements is extracted from current-voltage measurements done at room temperature. The results show that there is a change in the resistance when the sensing element is exposed to either ammonia or carbon dioxide gas. Fast response time and recovery time have been achieved.
{"title":"Electrical response of multi-walled carbon nanotubes to ammonia and carbon dioxide","authors":"R. Sidek, F. Yusof, F. M. Yasin, R. Wagiran, F. Ahmadun","doi":"10.1109/SMELEC.2010.5549502","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549502","url":null,"abstract":"This paper presents the electrical response of Multi-Walled Carbon Nanotube (MWCNT) towards the presence of gases at room temperature. The preparation of MWCNT and the experimental setup are also discussed. The resistance of MWCNT elements is extracted from current-voltage measurements done at room temperature. The results show that there is a change in the resistance when the sensing element is exposed to either ammonia or carbon dioxide gas. Fast response time and recovery time have been achieved.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"170 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122055376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-28DOI: 10.1109/SMELEC.2010.5549555
N. A. Amin, Z. Johari, M. Ahmadi, R. Ismail, D. Chek, E. Ng
The band energy of graphene nanoribbon is parabolic when reaching the minimum band energy. Otherwise, it is nonparabolic. In the parabolic band structure, Fermi-Dirac integrals are employed to study the carrier statistic whereas for nonparabolic part, numerical solutions are needed. Numerical method shows Fermi energy with respect to the band edge is a function of temperature that independent of the carrier concentration in the nondegenerate regime. However, the results differ in degenerate regime. In the strongly degenerate regime, the Fermi energy is a function of carrier concentration appropriate for given dimensionality, but is independent of temperature. We also report the salient features of the saturation velocity in parabolic part of the band structure. The intrinsic velocity is found to be appropriate thermal velocity in the nondegenerate regime, increasing with the temperature, but independent of carrier concentration. Conversely in degenerate regime, this intrinsic velocity is the Fermi velocity that is independent of temperature, but depends strongly on carrier concentration.
{"title":"Nonparabolic band structure effect on carrier transport in semiconducting graphene nanoribbons","authors":"N. A. Amin, Z. Johari, M. Ahmadi, R. Ismail, D. Chek, E. Ng","doi":"10.1109/SMELEC.2010.5549555","DOIUrl":"https://doi.org/10.1109/SMELEC.2010.5549555","url":null,"abstract":"The band energy of graphene nanoribbon is parabolic when reaching the minimum band energy. Otherwise, it is nonparabolic. In the parabolic band structure, Fermi-Dirac integrals are employed to study the carrier statistic whereas for nonparabolic part, numerical solutions are needed. Numerical method shows Fermi energy with respect to the band edge is a function of temperature that independent of the carrier concentration in the nondegenerate regime. However, the results differ in degenerate regime. In the strongly degenerate regime, the Fermi energy is a function of carrier concentration appropriate for given dimensionality, but is independent of temperature. We also report the salient features of the saturation velocity in parabolic part of the band structure. The intrinsic velocity is found to be appropriate thermal velocity in the nondegenerate regime, increasing with the temperature, but independent of carrier concentration. Conversely in degenerate regime, this intrinsic velocity is the Fermi velocity that is independent of temperature, but depends strongly on carrier concentration.","PeriodicalId":308501,"journal":{"name":"2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115685831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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