Pub Date : 2013-04-07DOI: 10.1109/NEMS.2013.6559698
K. Suh, N. Jeon, Changhyun Pang
We presents a highly sensitive, flexible, multiplex strain gauge sensor by utilizing single active layer of nanoscale mechanical interlocking between high aspect-ratio Pt-coated polymeric nanofibers. The sandwich-assembled, interconnected nanofibers supported on thin polydimethylsiloxane (PDMS) layers displayed a specific strain gauge (GF) factors for multiplex sensing such as pressure, shear force, and torsion, measured from the change of electrical resistance as a function of applied compressive strain (≤5%). The assembled device was used to monitor continuous kinetic motion of a bouncing micro-droplet on a superhydrophobic surface and physical force of a heartbeat under different conditions. In order to enhance adaptability on exquisite human-skin, skin adhesive patches for in vitro diagnostic device are developed.
{"title":"Wearable skin sensor using programmable interlocking of nanofibers","authors":"K. Suh, N. Jeon, Changhyun Pang","doi":"10.1109/NEMS.2013.6559698","DOIUrl":"https://doi.org/10.1109/NEMS.2013.6559698","url":null,"abstract":"We presents a highly sensitive, flexible, multiplex strain gauge sensor by utilizing single active layer of nanoscale mechanical interlocking between high aspect-ratio Pt-coated polymeric nanofibers. The sandwich-assembled, interconnected nanofibers supported on thin polydimethylsiloxane (PDMS) layers displayed a specific strain gauge (GF) factors for multiplex sensing such as pressure, shear force, and torsion, measured from the change of electrical resistance as a function of applied compressive strain (≤5%). The assembled device was used to monitor continuous kinetic motion of a bouncing micro-droplet on a superhydrophobic surface and physical force of a heartbeat under different conditions. In order to enhance adaptability on exquisite human-skin, skin adhesive patches for in vitro diagnostic device are developed.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127753067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-07DOI: 10.1109/NEMS.2013.6559854
Lei Li, S. Lei, Ruoyu Wang, Hong Yu, Qing‐An Huang
We have simulated the piezoresistance coefficients (Pie coefficients) in Si/Ge core-shell nanowires with a certain diameter and different thickness Ge-shell in the longitudinal direction on the basis of First-Principles calculations of models. Through calculations, it was found that the Pie coefficients of the nanowire constructed with an axis of Si atoms and three layers of Ge atoms outside (Si1Ge3 in Figure1) almost kept consistent with the GeNW as negative values. Under the compressive condition, the Pie coefficient of the Si2Ge2 can reach up to-21.20 × 10-11Pα-1. However, when the Ge-shell was decreased to only one Ge-atom layer, the Pie coefficients varied from negative values to positive ones. We also obtained the pie coefficients of the SiNW: 9.46 x 10-11Pa-1 and 35.77 x 10-11Pa-1 respectively under compression and tension.
在模型第一性原理计算的基础上，模拟了具有一定直径和不同Ge壳厚度的Si/Ge核壳纳米线纵向上的压阻系数(Pie系数)。通过计算发现，以Si原子为轴，外面有三层Ge原子(图1中的Si1Ge3)构成的纳米线的Pie系数几乎与GeNW保持一致，为负值。在压缩条件下，Si2Ge2的饼系数可达21.20 × 10-11Pα-1。然而，当ge壳层减少到只有一个ge原子层时，Pie系数由负值变为正值。得到了压缩和拉伸作用下SiNW的饼系数分别为9.46 x 10-11Pa-1和35.77 x 10-11Pa-1。
{"title":"First-principles study on the electro-mechanical coupling of the Si/Ge core-shell nanowires","authors":"Lei Li, S. Lei, Ruoyu Wang, Hong Yu, Qing‐An Huang","doi":"10.1109/NEMS.2013.6559854","DOIUrl":"https://doi.org/10.1109/NEMS.2013.6559854","url":null,"abstract":"We have simulated the piezoresistance coefficients (Pie coefficients) in Si/Ge core-shell nanowires with a certain diameter and different thickness Ge-shell in the longitudinal direction on the basis of First-Principles calculations of models. Through calculations, it was found that the Pie coefficients of the nanowire constructed with an axis of Si atoms and three layers of Ge atoms outside (Si<sub>1</sub>Ge<sub>3</sub> in Figure1) almost kept consistent with the GeNW as negative values. Under the compressive condition, the Pie coefficient of the Si<sub>2</sub>Ge<sub>2</sub> can reach up to-21.20 × 10<sup>-11</sup>Pα<sup>-1</sup>. However, when the Ge-shell was decreased to only one Ge-atom layer, the Pie coefficients varied from negative values to positive ones. We also obtained the pie coefficients of the SiNW: 9.46 x 10<sup>-11</sup>Pa<sup>-1</sup> and 35.77 x 10<sup>-11</sup>Pa<sup>-1</sup> respectively under compression and tension.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128810763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-07DOI: 10.1109/NEMS.2013.6559696
Lulu Zhang, Jian Lu, H. Takagi, R. Maeda
Nanowires have attracted considerable interest as the nanoscale interconnects and as the moving elements of both electronic and electromechanical devices. The evaluation of nanomechanical property plays a significant role in the development of new nanowire-based devices. Recently, we are engaged in developing an easy method for nanomechanical measurement by using an in-plane-mode piezoresistive vibration sensor fabricated with less process cost and package difficulties. Theoretical analysis and simulation results suggested that the device is capable of high-sensitive and variety, and it is expected to evaluate mechanical properties of metallic or metallic oxide nanowires.
{"title":"Mechanical characterization of nanowires by planar vibration sensor","authors":"Lulu Zhang, Jian Lu, H. Takagi, R. Maeda","doi":"10.1109/NEMS.2013.6559696","DOIUrl":"https://doi.org/10.1109/NEMS.2013.6559696","url":null,"abstract":"Nanowires have attracted considerable interest as the nanoscale interconnects and as the moving elements of both electronic and electromechanical devices. The evaluation of nanomechanical property plays a significant role in the development of new nanowire-based devices. Recently, we are engaged in developing an easy method for nanomechanical measurement by using an in-plane-mode piezoresistive vibration sensor fabricated with less process cost and package difficulties. Theoretical analysis and simulation results suggested that the device is capable of high-sensitive and variety, and it is expected to evaluate mechanical properties of metallic or metallic oxide nanowires.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117166118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Contactless conductivity detection has attained great attention in the last decade in capillary electrophoresis. But contactless conductivity detection is restricted by its sensitivity, how to improve detection sensitivity has become the key of contactless conductivity. In this paper a novel extended model for the detection cell consisting of a network of resistors and capacitors is proposed according to the structure of contactless conductivity detection. The effect of the detector geometry on the sensitivity of contactless conductivity is studied. By simulation, the optimal parameters are obtained. Sandwich electrode structure was established to improve the performance of the detector and minimize the stray capacitance between the electrodes. Using the optimal electrode structure, the two peaks corresponding to K+ and Mg2+ are clearly resolved with complete separation.
{"title":"Design of detection electrode on contactless conductivity detection in capillary electrophoresis microchip","authors":"Haifeng Zhang, Xiaowei Liu, Xiaoshu Zhang, Rui Weng","doi":"10.1109/NEMS.2013.6559915","DOIUrl":"https://doi.org/10.1109/NEMS.2013.6559915","url":null,"abstract":"Contactless conductivity detection has attained great attention in the last decade in capillary electrophoresis. But contactless conductivity detection is restricted by its sensitivity, how to improve detection sensitivity has become the key of contactless conductivity. In this paper a novel extended model for the detection cell consisting of a network of resistors and capacitors is proposed according to the structure of contactless conductivity detection. The effect of the detector geometry on the sensitivity of contactless conductivity is studied. By simulation, the optimal parameters are obtained. Sandwich electrode structure was established to improve the performance of the detector and minimize the stray capacitance between the electrodes. Using the optimal electrode structure, the two peaks corresponding to K+ and Mg2+ are clearly resolved with complete separation.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116637523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-07DOI: 10.1109/NEMS.2013.6559739
Mengxi Wu, Deyao Zhao, Hao Yan, Zicai Liang, Zhihong Li
We have developed a novel microchip aiming to rapidly optimize of electric parameters for electroporation. The electrodes were designed as symmetrical hyperbolic formatted to generate linearly decrescent electric field. Cells were cultured on the microchip for adherent electroporation and in-situ observation. Exhibited diversely in cell viability and transfection efficiency, three areas were observed obviously since the intensity of electric field was varied. Assisted by markers designed on electrodes, the location of optimal electroporation performance area and the corresponding range of electric field intensity were determined. Using the proposed electroporation chip, we obtained the optimal electric field spectrum for electroporation of HEK-293A cell line, that was about 0.75 ~ 1.25 × 105 V/m. The diversity of electroporation performance was evaluated by the dependence of cell viability and transfection efficiency on electric field intensity. With the guidance of reference electric field value, we designed a specific annular-interdigitated microchip to testify the electroporation characteristics. At last, we achieved excellent electroporation performance under the optimal conditions using self-made electroporation microchip.
{"title":"A symmetrical hyperbolic formatted microchip for rapid optimization of electroporation","authors":"Mengxi Wu, Deyao Zhao, Hao Yan, Zicai Liang, Zhihong Li","doi":"10.1109/NEMS.2013.6559739","DOIUrl":"https://doi.org/10.1109/NEMS.2013.6559739","url":null,"abstract":"We have developed a novel microchip aiming to rapidly optimize of electric parameters for electroporation. The electrodes were designed as symmetrical hyperbolic formatted to generate linearly decrescent electric field. Cells were cultured on the microchip for adherent electroporation and in-situ observation. Exhibited diversely in cell viability and transfection efficiency, three areas were observed obviously since the intensity of electric field was varied. Assisted by markers designed on electrodes, the location of optimal electroporation performance area and the corresponding range of electric field intensity were determined. Using the proposed electroporation chip, we obtained the optimal electric field spectrum for electroporation of HEK-293A cell line, that was about 0.75 ~ 1.25 × 105 V/m. The diversity of electroporation performance was evaluated by the dependence of cell viability and transfection efficiency on electric field intensity. With the guidance of reference electric field value, we designed a specific annular-interdigitated microchip to testify the electroporation characteristics. At last, we achieved excellent electroporation performance under the optimal conditions using self-made electroporation microchip.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115505543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-07DOI: 10.1109/NEMS.2013.6559930
C. Gu, S. Chen, Xiaojun Guo
Stretchable conductive films were produced by embedding silver nanowires onto the surface of biocompatible polydimethylsiloxane (PDMS) elastomeric membranes with low cost solution based processes. The films showed low sheet resistance (<;12Ω/□) and good transparency (40% at 550nm). By laminating two films together, transparent elastic capacitive pressure sensors were made, which present higher sensitivity to that using Al foil as the electrode. A higher concentration of silver nanowire solution was also shown to be able to improve the sensitivity.
{"title":"Transparent elastic capacitive pressure sensors based on silver nanowire electrodes","authors":"C. Gu, S. Chen, Xiaojun Guo","doi":"10.1109/NEMS.2013.6559930","DOIUrl":"https://doi.org/10.1109/NEMS.2013.6559930","url":null,"abstract":"Stretchable conductive films were produced by embedding silver nanowires onto the surface of biocompatible polydimethylsiloxane (PDMS) elastomeric membranes with low cost solution based processes. The films showed low sheet resistance (<;12Ω/□) and good transparency (40% at 550nm). By laminating two films together, transparent elastic capacitive pressure sensors were made, which present higher sensitivity to that using Al foil as the electrode. A higher concentration of silver nanowire solution was also shown to be able to improve the sensitivity.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114141719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-07DOI: 10.1109/NEMS.2013.6559862
Kai-Shing Yang, Yu-Chi Cheng, M. Jeng, K. Chien, Jin‐Cherng Shyu
Si-based micro pulsating heat pipes (μPHP) charged with HFE-7100 were tested at several heating powers with two orientations, θ = 0° and 90°. The width of the channel is 0.8 mm in a μPHP having uniform channels, and 1.0 mm or 0.6 mm in the other μPHP. The depth of each channel is 0.25 mm. The overall size of each μPHP is 60 mm × 10 mm × 1.25 mm. Both visual observation and temperature response of the present μPHPs at various conditions were performed. The performance was compared between two μPHPs having either uniform channels or non-uniform channels at difference heating powers. Results showed that both μPHPs could not start the pulsating two-phase flow in the channel of μPHPs as the μPHPs were operated horizontally at heating power ranging from 1 W to 7 W, except when the μPHP having non-uniform channels was tested at heating power of 7 W. Unlike the failure start-up for horizontal arrangement of μPHPs, μPHPs with a vertical arrangement shows a significant start-up phenomenon for both μPHPs with uniform and non-uniform channels due to the assistance in the start-up of both μPHPs arising from gravity force.
{"title":"An experimental investigation of micro pulsating heat pipes","authors":"Kai-Shing Yang, Yu-Chi Cheng, M. Jeng, K. Chien, Jin‐Cherng Shyu","doi":"10.1109/NEMS.2013.6559862","DOIUrl":"https://doi.org/10.1109/NEMS.2013.6559862","url":null,"abstract":"Si-based micro pulsating heat pipes (μPHP) charged with HFE-7100 were tested at several heating powers with two orientations, θ = 0° and 90°. The width of the channel is 0.8 mm in a μPHP having uniform channels, and 1.0 mm or 0.6 mm in the other μPHP. The depth of each channel is 0.25 mm. The overall size of each μPHP is 60 mm × 10 mm × 1.25 mm. Both visual observation and temperature response of the present μPHPs at various conditions were performed. The performance was compared between two μPHPs having either uniform channels or non-uniform channels at difference heating powers. Results showed that both μPHPs could not start the pulsating two-phase flow in the channel of μPHPs as the μPHPs were operated horizontally at heating power ranging from 1 W to 7 W, except when the μPHP having non-uniform channels was tested at heating power of 7 W. Unlike the failure start-up for horizontal arrangement of μPHPs, μPHPs with a vertical arrangement shows a significant start-up phenomenon for both μPHPs with uniform and non-uniform channels due to the assistance in the start-up of both μPHPs arising from gravity force.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116055089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-07DOI: 10.1109/NEMS.2013.6559746
Hongze Zhang, Zhihong Li
This paper presents the fabrication and thermal stability of the Ru electrode used for high power Ru-Au contact RF MEMS switch with microspring contact design. Here we develop a new process with bilayer lift-off and strain release layer to get the 3000 Å Ti/Au/Ru electrode with excellent smooth edge for high power handling and low loss. Furthermore, the thermal test at 400°C , 500°C and 600°C over 1 hour has been done. Investigation of the surface with SEM and EDX shows that the electrode has a good thermal stability at 400°C, which is proper for high power handling.
本文介绍了用于微弹簧触点设计的大功率Ru- au触点射频MEMS开关的Ru电极的制备及其热稳定性。本文提出了一种双层剥离和应变释放层的新工艺，以获得具有优异光滑边缘的3000 Å Ti/Au/Ru电极，具有高功率处理和低损耗。此外，在400°C, 500°C和600°C下进行了1小时的热测试。SEM和EDX分析表明，该电极在400℃时具有良好的热稳定性，适合大功率处理。
{"title":"Fabrication and thermal stability characterization of Ru electrode used for high power contact RF MEMS switch","authors":"Hongze Zhang, Zhihong Li","doi":"10.1109/NEMS.2013.6559746","DOIUrl":"https://doi.org/10.1109/NEMS.2013.6559746","url":null,"abstract":"This paper presents the fabrication and thermal stability of the Ru electrode used for high power Ru-Au contact RF MEMS switch with microspring contact design. Here we develop a new process with bilayer lift-off and strain release layer to get the 3000 Å Ti/Au/Ru electrode with excellent smooth edge for high power handling and low loss. Furthermore, the thermal test at 400°C , 500°C and 600°C over 1 hour has been done. Investigation of the surface with SEM and EDX shows that the electrode has a good thermal stability at 400°C, which is proper for high power handling.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114852565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-07DOI: 10.1109/NEMS.2013.6559783
Sheng-Shian Li
This paper reports on recent progress on high-Q integrated micromechanical resonators using “CMOS-MEMS technology” to enable monolithic integration of MEMS and CMOS. Specifically, we take advantage of IC and semiconductor strength in Taiwan to develop several CMOS-MEMS resonator platforms targeted for inherent integration of MEMS and circuitry towards single-chip implementation for timing reference and oscillator applications. In addition, performance enhancement in terms of motional impedance, power handling, linearity, thermal stability, frequency tunability, quality factor, and feedthrough level have been addressed.
{"title":"Advances of CMOS-MEMS technology for resonator applications","authors":"Sheng-Shian Li","doi":"10.1109/NEMS.2013.6559783","DOIUrl":"https://doi.org/10.1109/NEMS.2013.6559783","url":null,"abstract":"This paper reports on recent progress on high-Q integrated micromechanical resonators using “CMOS-MEMS technology” to enable monolithic integration of MEMS and CMOS. Specifically, we take advantage of IC and semiconductor strength in Taiwan to develop several CMOS-MEMS resonator platforms targeted for inherent integration of MEMS and circuitry towards single-chip implementation for timing reference and oscillator applications. In addition, performance enhancement in terms of motional impedance, power handling, linearity, thermal stability, frequency tunability, quality factor, and feedthrough level have been addressed.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127220031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-04-07DOI: 10.1109/NEMS.2013.6559814
N. P. Ling, K. Chou, C. T. Jhou, M. Lai, T. C. Chen, C. Lai, L. W. Wang, Gwo-Bin Lee, M. M. Lee
Strong transverse magneto-optical Kerr effect (TMOKE) on Au/Fe/Au surface plasmon (SP) gratings is demonstrated. Via the optimal design of this structure, the measured Kerr parameter is 0.03, which is 3 times larger than the maximal value ever reported on a plane magneto-optical SP substrate. Moreover, the Kerr parameter is very dispersive near the SP wavelength, which can be used for a high sensitive biosensor.
{"title":"Observation of strong transverse magneto-optical Kerr effect on surface plasmonic gratings","authors":"N. P. Ling, K. Chou, C. T. Jhou, M. Lai, T. C. Chen, C. Lai, L. W. Wang, Gwo-Bin Lee, M. M. Lee","doi":"10.1109/NEMS.2013.6559814","DOIUrl":"https://doi.org/10.1109/NEMS.2013.6559814","url":null,"abstract":"Strong transverse magneto-optical Kerr effect (TMOKE) on Au/Fe/Au surface plasmon (SP) gratings is demonstrated. Via the optimal design of this structure, the measured Kerr parameter is 0.03, which is 3 times larger than the maximal value ever reported on a plane magneto-optical SP substrate. Moreover, the Kerr parameter is very dispersive near the SP wavelength, which can be used for a high sensitive biosensor.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121001568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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