Pub Date : 2014-10-01DOI: 10.1109/CSICS.2014.6978551
M. Kim, Huichu Liu, Karthik Swaminathan, Xueqing Li, S. Datta, V. Narayanan
III-V Tunnel FETs (TFET) possess unique characteristics such as steep slope switching, high gm/IDS, uni-directional conduction, and low voltage operating capability. These characteristics have the potential to result in energy savings in both digital and analog applications. In this paper, we provide an overview of the power efficient properties of III-V TFETs and designs at the device, circuit and architectural level.
{"title":"Enabling Power-Efficient Designs with III-V Tunnel FETs","authors":"M. Kim, Huichu Liu, Karthik Swaminathan, Xueqing Li, S. Datta, V. Narayanan","doi":"10.1109/CSICS.2014.6978551","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978551","url":null,"abstract":"III-V Tunnel FETs (TFET) possess unique characteristics such as steep slope switching, high gm/IDS, uni-directional conduction, and low voltage operating capability. These characteristics have the potential to result in energy savings in both digital and analog applications. In this paper, we provide an overview of the power efficient properties of III-V TFETs and designs at the device, circuit and architectural level.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121527859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/CSICS.2014.6978561
K. Maize, G. Pavlidis, E. Heller, Luke Yates, D. Kendig, S. Graham, A. Shakouri
Self-heating in gallium nitride based high frequency, high electron mobility power transistors (GaN HEMTs) is inspected using micro-Raman thermography and 800 picosecond transient thermoreflectance imaging. The two methods provide complementary temperature information inside the semiconductor and on top metal layers of the GaN HEMT. Self heating is measured under both steady-state and ultra-fast pulsed transient operation with submicron spatial resolution, 50 milliKelvin temperature resolution, and nanosecond time resolution. Fine grain electrothermal modeling of the HEMT steady state and transient self-heating are presented alongside measurements. Large spatial and temporal temperature gradients are quantified. Deviations due to unknown parameters are discussed.
{"title":"High Resolution Thermal Characterization and Simulation of Power AlGaN/GaN HEMTs Using Micro-Raman Thermography and 800 Picosecond Transient Thermoreflectance Imaging","authors":"K. Maize, G. Pavlidis, E. Heller, Luke Yates, D. Kendig, S. Graham, A. Shakouri","doi":"10.1109/CSICS.2014.6978561","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978561","url":null,"abstract":"Self-heating in gallium nitride based high frequency, high electron mobility power transistors (GaN HEMTs) is inspected using micro-Raman thermography and 800 picosecond transient thermoreflectance imaging. The two methods provide complementary temperature information inside the semiconductor and on top metal layers of the GaN HEMT. Self heating is measured under both steady-state and ultra-fast pulsed transient operation with submicron spatial resolution, 50 milliKelvin temperature resolution, and nanosecond time resolution. Fine grain electrothermal modeling of the HEMT steady state and transient self-heating are presented alongside measurements. Large spatial and temporal temperature gradients are quantified. Deviations due to unknown parameters are discussed.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125223617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Tatsumi, Naoki Itabashi, T. Ikagawa, N. Kono, M. Seki, Keiji Tanaka, K. Yamaji, Y. Fujimura, K. Uesaka, T. Nakabayashi, H. Shoji, S. Ogita
We have fabricated a compact 224-Gb/s dual-polarization 16-ary quadrature amplitude modulation (DP-16QAM) modulator module consisting of InP-based Mach-Zehnder modulators (MZMs), linear driver ICs and polarization multiplexing micro-optics. We have demonstrated a very low power dissipation of 3.2 W with comparable performance to LiNbO3-based modulator in back-to-back operation.
{"title":"A Compact Low-Power 224-Gb/s DP-16QAM Modulator Module with InP-Based Modulator and Linear Driver ICs","authors":"T. Tatsumi, Naoki Itabashi, T. Ikagawa, N. Kono, M. Seki, Keiji Tanaka, K. Yamaji, Y. Fujimura, K. Uesaka, T. Nakabayashi, H. Shoji, S. Ogita","doi":"10.1364/OFC.2014.TU3H.5","DOIUrl":"https://doi.org/10.1364/OFC.2014.TU3H.5","url":null,"abstract":"We have fabricated a compact 224-Gb/s dual-polarization 16-ary quadrature amplitude modulation (DP-16QAM) modulator module consisting of InP-based Mach-Zehnder modulators (MZMs), linear driver ICs and polarization multiplexing micro-optics. We have demonstrated a very low power dissipation of 3.2 W with comparable performance to LiNbO3-based modulator in back-to-back operation.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124971265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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