Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978535
Sona Carpenter, Z. He, M. Bao, H. Zirath
A highly integrated chipset comprising a transmitter (TX) and a receiver (RX) chip, based on a 250 nm InP DHBT technology for high data rate D-band (110-170 GHz) wireless communication is described. The chipset is designed for point-to-point wireless communication for 4G and 5G mobile communication infrastructure, high data rate backhaul, low-latency wireless HDTV transmission and >40 Gbps transmission over dielectric waveguide. The measured RX conversion gain is 26 dB, with a noise figure of 9 dB. The measured TX conversion gain is 20 dB. A maximum QPSK data rate of 44 Gbps is demonstrated, which exceeds the present state-of-the art in the D-band by a factor of 2.
{"title":"A Highly Integrated Chipset for 40 Gbps Wireless D-Band Communication Based on a 250 nm InP DHBT Technology","authors":"Sona Carpenter, Z. He, M. Bao, H. Zirath","doi":"10.1109/CSICS.2014.6978535","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978535","url":null,"abstract":"A highly integrated chipset comprising a transmitter (TX) and a receiver (RX) chip, based on a 250 nm InP DHBT technology for high data rate D-band (110-170 GHz) wireless communication is described. The chipset is designed for point-to-point wireless communication for 4G and 5G mobile communication infrastructure, high data rate backhaul, low-latency wireless HDTV transmission and >40 Gbps transmission over dielectric waveguide. The measured RX conversion gain is 26 dB, with a noise figure of 9 dB. The measured TX conversion gain is 20 dB. A maximum QPSK data rate of 44 Gbps is demonstrated, which exceeds the present state-of-the art in the D-band by a factor of 2.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125324315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978527
E. Iverson, M. Feng
An integrated I/Q modulator is presented, implementing a static frequency divider for local oscillator (LO) quadrature phase splitting, Gilbert cell switching mixers for direct upconversion, and fabricated in a high speed Indium-Phosphide HBT process. LO quadrature is fine-tuned by a control voltage with 0.18 degrees/mV for 2.14 GHz operation. Single-sideband conversion gain ranges from -14 to -23 dB across the LO frequency range of 50 MHz to 26 GHz. Single-carrier W-CDMA ACPR ranges from -64 dBc to -53 dBc for approximately -20 dBm output power. Output intercept point (OIP3) ranges from +14 dBm at 50 MHz to +4.6 dBm at 26 GHz.
{"title":"A 0.05-26 GHz Direct Conversion I/Q Modulator MMIC","authors":"E. Iverson, M. Feng","doi":"10.1109/CSICS.2014.6978527","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978527","url":null,"abstract":"An integrated I/Q modulator is presented, implementing a static frequency divider for local oscillator (LO) quadrature phase splitting, Gilbert cell switching mixers for direct upconversion, and fabricated in a high speed Indium-Phosphide HBT process. LO quadrature is fine-tuned by a control voltage with 0.18 degrees/mV for 2.14 GHz operation. Single-sideband conversion gain ranges from -14 to -23 dB across the LO frequency range of 50 MHz to 26 GHz. Single-carrier W-CDMA ACPR ranges from -64 dBc to -53 dBc for approximately -20 dBm output power. Output intercept point (OIP3) ranges from +14 dBm at 50 MHz to +4.6 dBm at 26 GHz.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116564809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978564
R. Leblanc, Noelia Santos Ibeas, A. Gasmi, J. Moron
This paper presents a Ka band chipset dedicated to electronically steerable antenna systems. The first MMIC of the chipset is a multifunction chip including several amplifier stages, digitally controlled attenuator and phase shifter, a complex Transmit/Receive switching scheme and a Serial Input to Parallel Output digital circuit. The second MMIC includes a Low Noise amplifier, a Power amplifier and a Transmit/Receive switching circuitry. Both circuits present state of the art performances at frequencies above 30 GHz and allow together a huge reduction of system complexity. The circuits are fabricated using P-HEMT processes validated for Space use. Various possible architectures together with design issues and test results will be presented.
{"title":"Ka Band Chip-Set for Electronically Steerable Antennas","authors":"R. Leblanc, Noelia Santos Ibeas, A. Gasmi, J. Moron","doi":"10.1109/CSICS.2014.6978564","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978564","url":null,"abstract":"This paper presents a Ka band chipset dedicated to electronically steerable antenna systems. The first MMIC of the chipset is a multifunction chip including several amplifier stages, digitally controlled attenuator and phase shifter, a complex Transmit/Receive switching scheme and a Serial Input to Parallel Output digital circuit. The second MMIC includes a Low Noise amplifier, a Power amplifier and a Transmit/Receive switching circuitry. Both circuits present state of the art performances at frequencies above 30 GHz and allow together a huge reduction of system complexity. The circuits are fabricated using P-HEMT processes validated for Space use. Various possible architectures together with design issues and test results will be presented.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122016969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978576
U. Pfeiffer, J. Grzyb, R. Al Hadi, N. Sarmah, K. Statnikov, S. Malz, B. Heinemann
This paper presents recent developments on transmitter and receiver circuit in advanced SiGe technologies for emerging applications in the sub-millimeter wave region of the electromagnetic spectrum. This includes high-power harmonic oscillators, multiplier chains, and heterodyne I/Q transmitters for terahertz signal generation, as well as direct detectors, heterodyne receivers and Radar transceivers for wide-band signal detection. The circuits are attached to a secondary silicon lens and packaged on low-cost FR4 printed circuit boards.
{"title":"SiGe Transmitter and Receiver Circuits for Emerging Terahertz Applications","authors":"U. Pfeiffer, J. Grzyb, R. Al Hadi, N. Sarmah, K. Statnikov, S. Malz, B. Heinemann","doi":"10.1109/CSICS.2014.6978576","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978576","url":null,"abstract":"This paper presents recent developments on transmitter and receiver circuit in advanced SiGe technologies for emerging applications in the sub-millimeter wave region of the electromagnetic spectrum. This includes high-power harmonic oscillators, multiplier chains, and heterodyne I/Q transmitters for terahertz signal generation, as well as direct detectors, heterodyne receivers and Radar transceivers for wide-band signal detection. The circuits are attached to a secondary silicon lens and packaged on low-cost FR4 printed circuit boards.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130824620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978580
S. Mertens
The Compact Model Coalition (CMC), a part of the Silicon Integration Initiative (Si2), is standardizing a compact model for Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). After a global search for model candidates, eight were selected to present at a CMC meeting. In the next phase, selected candidates will be evaluated for their ability to fit a common set of hardware data. After a third round of more comprehensive testing, a standard GaN HEMT model will be selected.
{"title":"Status of the GaN HEMT Standardization Effort at the Compact Model Coalition","authors":"S. Mertens","doi":"10.1109/CSICS.2014.6978580","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978580","url":null,"abstract":"The Compact Model Coalition (CMC), a part of the Silicon Integration Initiative (Si2), is standardizing a compact model for Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). After a global search for model candidates, eight were selected to present at a CMC meeting. In the next phase, selected candidates will be evaluated for their ability to fit a common set of hardware data. After a third round of more comprehensive testing, a standard GaN HEMT model will be selected.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124946574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978542
P. Nilsson, J. Schleeh, N. Wadefalk, J. P. Starski, H. Rodilla, G. Alestig, J. Halonen, B. Nilsson, H. Zirath, J. Grahn
An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.
开发并优化了低温下超低噪声放大器(LNAs)的InP MMIC工艺。该过程中的放大器工作频率高达100ghz。加工的晶圆为4英寸，可携带超过4000个3级单元。对于大量6-20 GHz的3级lna，我们在环境温度为10 K时测量到的平均噪声温度为5.8 K，这是该频率范围内最先进的水平，在300K时测量到的平均噪声温度为66.3 K。相关增益分别为35.9 dB (10K)和33.2 dB (300k)， 47个LNAs的室温标准差分别为1.5 K和0.3 dB。
{"title":"An InP MMIC Process Optimized for Low Noise at Cryo","authors":"P. Nilsson, J. Schleeh, N. Wadefalk, J. P. Starski, H. Rodilla, G. Alestig, J. Halonen, B. Nilsson, H. Zirath, J. Grahn","doi":"10.1109/CSICS.2014.6978542","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978542","url":null,"abstract":"An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4\" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130733439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978573
G. Collins, J. Fisher, F. Radulescu, J. Barner, S. Sheppard, R. Worley, D. Kimball
In this paper, we present the design of an inverse Class F power amplifier GaN MMIC, specifically designed for an envelope-tracking application. Power transistors are not typically characterized for the drain modulation that is fundamental to envelope tracking, and the available device models are not usually validated over the required drain bias range. Here, we used fundamental load-pull to characterize a 6×100μm GaN HEMT device over the range of drain bias voltages that would be used in the envelope-tracking PA. This data was scaled to an 8×100μm device to achieve the target output power, and these empirical load-pull models were then used in the design of the power MMIC along with harmonic design in simulation. A total of eight 8×100 μm HEMTs were used in the final design, achieving a maximum power output of 32 W at 10 GHz with a drain efficiency of greater than 45% in back-off, on a die size of less than 4 × 4 mm2 under envelope tracking.
{"title":"Power Amplifier Design Optimized for Envelope Tracking","authors":"G. Collins, J. Fisher, F. Radulescu, J. Barner, S. Sheppard, R. Worley, D. Kimball","doi":"10.1109/CSICS.2014.6978573","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978573","url":null,"abstract":"In this paper, we present the design of an inverse Class F power amplifier GaN MMIC, specifically designed for an envelope-tracking application. Power transistors are not typically characterized for the drain modulation that is fundamental to envelope tracking, and the available device models are not usually validated over the required drain bias range. Here, we used fundamental load-pull to characterize a 6×100μm GaN HEMT device over the range of drain bias voltages that would be used in the envelope-tracking PA. This data was scaled to an 8×100μm device to achieve the target output power, and these empirical load-pull models were then used in the design of the power MMIC along with harmonic design in simulation. A total of eight 8×100 μm HEMTs were used in the final design, achieving a maximum power output of 32 W at 10 GHz with a drain efficiency of greater than 45% in back-off, on a die size of less than 4 × 4 mm2 under envelope tracking.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133642330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978571
M. Rodwell, H. Park, M. Piels, M. Lu, A. Sivananthan, E. Bloch, Z. Griffith, M. Uteaga, L. Johansson, J. Bowers, L. Coldren
We describe techniques for phase-locked coherent optical communications, including wavelength synthesis for wavelength-division-multiplexed optical communications, compact coherent BPSK receivers, and coherent demodulation of WDM in the electrical domain. Index Terms - Coherent optical communications, phase-locked-loops, frequency synthesis, wavelength-division-multiplexing.
{"title":"Optical Phase-Locking and Wavelength Synthesis","authors":"M. Rodwell, H. Park, M. Piels, M. Lu, A. Sivananthan, E. Bloch, Z. Griffith, M. Uteaga, L. Johansson, J. Bowers, L. Coldren","doi":"10.1109/CSICS.2014.6978571","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978571","url":null,"abstract":"We describe techniques for phase-locked coherent optical communications, including wavelength synthesis for wavelength-division-multiplexed optical communications, compact coherent BPSK receivers, and coherent demodulation of WDM in the electrical domain. Index Terms - Coherent optical communications, phase-locked-loops, frequency synthesis, wavelength-division-multiplexing.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127247296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978547
C. Xie, David W. Cripe, J. Reyland, D. Landt, Anders Walker
We describe an advanced X-band outphasing power amplifier as a promising solution to provide high power output and wide modulation bandwidth for next-generation RF digital communication. Our proposed PA system consists of a high efficiency X-band GaN HEMT based Class-E outphasing PA MMIC.
{"title":"Development of High-Efficiency X-Band Outphasing Transmitter","authors":"C. Xie, David W. Cripe, J. Reyland, D. Landt, Anders Walker","doi":"10.1109/CSICS.2014.6978547","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978547","url":null,"abstract":"We describe an advanced X-band outphasing power amplifier as a promising solution to provide high power output and wide modulation bandwidth for next-generation RF digital communication. Our proposed PA system consists of a high efficiency X-band GaN HEMT based Class-E outphasing PA MMIC.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121297162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978557
R. Walker, M. O'Keefe, N. Cameron, H. Ereifej, T. Brast
GaAs/AlGaAs provides an environmentally stable and rugged guided-wave system for realisation of high functionality electro-optic modulators for telecommunications, avionics and aerospace. We detail the guided-wave building-blocks required to build complex modulator components.
{"title":"Gallium Arsenide Electro-Optic Modulators","authors":"R. Walker, M. O'Keefe, N. Cameron, H. Ereifej, T. Brast","doi":"10.1109/CSICS.2014.6978557","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978557","url":null,"abstract":"GaAs/AlGaAs provides an environmentally stable and rugged guided-wave system for realisation of high functionality electro-optic modulators for telecommunications, avionics and aerospace. We detail the guided-wave building-blocks required to build complex modulator components.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125384634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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