Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978571
M. Rodwell, H. Park, M. Piels, M. Lu, A. Sivananthan, E. Bloch, Z. Griffith, M. Uteaga, L. Johansson, J. Bowers, L. Coldren
We describe techniques for phase-locked coherent optical communications, including wavelength synthesis for wavelength-division-multiplexed optical communications, compact coherent BPSK receivers, and coherent demodulation of WDM in the electrical domain. Index Terms - Coherent optical communications, phase-locked-loops, frequency synthesis, wavelength-division-multiplexing.
{"title":"Optical Phase-Locking and Wavelength Synthesis","authors":"M. Rodwell, H. Park, M. Piels, M. Lu, A. Sivananthan, E. Bloch, Z. Griffith, M. Uteaga, L. Johansson, J. Bowers, L. Coldren","doi":"10.1109/CSICS.2014.6978571","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978571","url":null,"abstract":"We describe techniques for phase-locked coherent optical communications, including wavelength synthesis for wavelength-division-multiplexed optical communications, compact coherent BPSK receivers, and coherent demodulation of WDM in the electrical domain. Index Terms - Coherent optical communications, phase-locked-loops, frequency synthesis, wavelength-division-multiplexing.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127247296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978567
D. Green, C. L. Dohrman, A. Kane, Tsu-Hsi Chang
The DARPA Microsystems Technology Office is developing revolutionary materials, devices, and integration techniques for meeting the RF integrated circuit performance requirements for advanced modern RF systems. DARPA is enabling these systems through systematic development of materials and devices, circuits, and integration technologies for compound semiconductors. The DARPA Nitride Electronic Next-Generation Technology (NEXT) program is developing high performance nitride transistors for high-speed RF, analog and mixed signal electronics, thus overcoming the Johnson figure of merit limits to achieving simultaneous high-speed operation and high breakdown voltage. The DARPA Microscale Power Conversion (MPC) program is developing nitride-based technology to enable dynamic envelope-tracking power conversion embedded in RF radiating elements. The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program is developing transistor-scale heterogeneous integration processes to intimately combine advanced compound semiconductor (CS) devices, as well as other emerging materials and devices, with high-density silicon CMOS technology. Taken together, these programs are addressing many of the critical challenges for next-generation RF modules and seek to revolutionize DoD capabilities in this area.
{"title":"Materials and Integration Strategies for Modern RF Integrated Circuits","authors":"D. Green, C. L. Dohrman, A. Kane, Tsu-Hsi Chang","doi":"10.1109/CSICS.2014.6978567","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978567","url":null,"abstract":"The DARPA Microsystems Technology Office is developing revolutionary materials, devices, and integration techniques for meeting the RF integrated circuit performance requirements for advanced modern RF systems. DARPA is enabling these systems through systematic development of materials and devices, circuits, and integration technologies for compound semiconductors. The DARPA Nitride Electronic Next-Generation Technology (NEXT) program is developing high performance nitride transistors for high-speed RF, analog and mixed signal electronics, thus overcoming the Johnson figure of merit limits to achieving simultaneous high-speed operation and high breakdown voltage. The DARPA Microscale Power Conversion (MPC) program is developing nitride-based technology to enable dynamic envelope-tracking power conversion embedded in RF radiating elements. The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program is developing transistor-scale heterogeneous integration processes to intimately combine advanced compound semiconductor (CS) devices, as well as other emerging materials and devices, with high-density silicon CMOS technology. Taken together, these programs are addressing many of the critical challenges for next-generation RF modules and seek to revolutionize DoD capabilities in this area.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123975053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978557
R. Walker, M. O'Keefe, N. Cameron, H. Ereifej, T. Brast
GaAs/AlGaAs provides an environmentally stable and rugged guided-wave system for realisation of high functionality electro-optic modulators for telecommunications, avionics and aerospace. We detail the guided-wave building-blocks required to build complex modulator components.
{"title":"Gallium Arsenide Electro-Optic Modulators","authors":"R. Walker, M. O'Keefe, N. Cameron, H. Ereifej, T. Brast","doi":"10.1109/CSICS.2014.6978557","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978557","url":null,"abstract":"GaAs/AlGaAs provides an environmentally stable and rugged guided-wave system for realisation of high functionality electro-optic modulators for telecommunications, avionics and aerospace. We detail the guided-wave building-blocks required to build complex modulator components.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125384634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978569
K.K.-S. Kong, M. Kao, S. Nayak
We demonstrate a compact and efficient Ka-band high power amplifier with output power of 34.5dBm at 30 GHz by using 0.15 μm GaN technology. This paper reports record compact area of 2.38 mm^2 in a Ka-band high power amplifier (HPA) class. We employed 0.15 μm GaN process on 50 μm thick SiC substrate technology to achieve high output power with high efficiency and compact design. The advantage of a GaN PA in commercial millimeter-wave market is illustrated by comparing it to similar GaAs power amplifiers.
{"title":"Miniaturization of Ka-Band High Power Amplifier by 0.15 µm GaN MMIC Technology","authors":"K.K.-S. Kong, M. Kao, S. Nayak","doi":"10.1109/CSICS.2014.6978569","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978569","url":null,"abstract":"We demonstrate a compact and efficient Ka-band high power amplifier with output power of 34.5dBm at 30 GHz by using 0.15 μm GaN technology. This paper reports record compact area of 2.38 mm^2 in a Ka-band high power amplifier (HPA) class. We employed 0.15 μm GaN process on 50 μm thick SiC substrate technology to achieve high output power with high efficiency and compact design. The advantage of a GaN PA in commercial millimeter-wave market is illustrated by comparing it to similar GaAs power amplifiers.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131410367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978579
Bin Hou, Yibing Zhao, Eric Newman, Shuyun Zhang
A monolithic integrated single chip RF variable gain low noise amplifier (VGLNA) based on GaAs BiFET technology is demonstrated in this work. The LNA could be operated from 700MHz to 3GHz. The measured NF is 1dB at both 975MHz and 1.75GHz. The gain of the VGLNA can be varied from a maximum of 36dB down to -13dB at 1.75GHz. Measured Output IP3 is 38.4dBm and measured Output 1dB compression is greater than 27dBm at 1.75GHz at maximum gain. The measured input return loss is better than 14dB across the full gain range. The single die VGLNA is implemented in a 5×5mm LFCSP package. It draws 265mA on a 5V supply.
{"title":"Single Chip RF Variable Gain Low Noise Amplifier","authors":"Bin Hou, Yibing Zhao, Eric Newman, Shuyun Zhang","doi":"10.1109/CSICS.2014.6978579","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978579","url":null,"abstract":"A monolithic integrated single chip RF variable gain low noise amplifier (VGLNA) based on GaAs BiFET technology is demonstrated in this work. The LNA could be operated from 700MHz to 3GHz. The measured NF is 1dB at both 975MHz and 1.75GHz. The gain of the VGLNA can be varied from a maximum of 36dB down to -13dB at 1.75GHz. Measured Output IP3 is 38.4dBm and measured Output 1dB compression is greater than 27dBm at 1.75GHz at maximum gain. The measured input return loss is better than 14dB across the full gain range. The single die VGLNA is implemented in a 5×5mm LFCSP package. It draws 265mA on a 5V supply.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125002897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978526
Z. Griffith, M. Urteaga, P. Rowell, R. Pierson
A 69.5-94.0GHz solid-state power amplifier MMIC is presented in 250nm InP HBT, where from 76-94GHz it demonstrates >200mW Pout with simultaneous >23.5% PAE, 11dB compressed gain and 694mW PDC. At 86GHz operation, 232mW Pout with peak 28.9% PAE is observed - this corresponds to 1.21W/mm linear power density. This 2-stage amplifier has a flat S21 mid-band gain of 14-15dB, and the 1dB small-signal gain roll-off is between 66-96GHz. The large-signal Psat bandwidth is between 69.5-94GHz. This SSPA utilizes a novel, compact power cell topology developed for multi-finger HBTs, which overcomes the inability of the RF output interconnects and combiners to carry the high DC bias currents required by the HBT PA cells in the thin-film microstrip interconnect. Across the 76-94GHz bandwidth, P1dB gain compression Pout is >118mW which corresponds to ≥ 14.5% PAE; this is a relevant RF operating point where higher linearity operation may be required. This work improves upon the state-of-the-art for E-, and W-Band SSPAs by demonstrating 6x higher bandwidth (24.5GHz largesignal bandwidth) while having high PAE > 23.5%. This compact approach can permit an additional 4× or 8× power combining and in-turn a monolithic 1-1.5W Pout SSPA in this 250nm InP HBT technology at Eand W-band.
{"title":"A >0mW SSPA from 76-94GHz, with Peak 28.9% PAE at 86GHz","authors":"Z. Griffith, M. Urteaga, P. Rowell, R. Pierson","doi":"10.1109/CSICS.2014.6978526","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978526","url":null,"abstract":"A 69.5-94.0GHz solid-state power amplifier MMIC is presented in 250nm InP HBT, where from 76-94GHz it demonstrates >200mW Pout with simultaneous >23.5% PAE, 11dB compressed gain and 694mW PDC. At 86GHz operation, 232mW Pout with peak 28.9% PAE is observed - this corresponds to 1.21W/mm linear power density. This 2-stage amplifier has a flat S21 mid-band gain of 14-15dB, and the 1dB small-signal gain roll-off is between 66-96GHz. The large-signal Psat bandwidth is between 69.5-94GHz. This SSPA utilizes a novel, compact power cell topology developed for multi-finger HBTs, which overcomes the inability of the RF output interconnects and combiners to carry the high DC bias currents required by the HBT PA cells in the thin-film microstrip interconnect. Across the 76-94GHz bandwidth, P1dB gain compression Pout is >118mW which corresponds to ≥ 14.5% PAE; this is a relevant RF operating point where higher linearity operation may be required. This work improves upon the state-of-the-art for E-, and W-Band SSPAs by demonstrating 6x higher bandwidth (24.5GHz largesignal bandwidth) while having high PAE > 23.5%. This compact approach can permit an additional 4× or 8× power combining and in-turn a monolithic 1-1.5W Pout SSPA in this 250nm InP HBT technology at Eand W-band.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129731516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978529
K. T. Ng, Y. Choi, Keh-Chung Wang
A common-cathode VCSEL driver is presented in this paper. Overcoming the large parasitics introduced by the current source at the output node, this VCSEL driver is able to operate at data rate of 25Gb/s. With different rising/falling edge speed, it is able to address the non-linear issues of VCSEL diode. The VCSEL driver was fabricated using IBM8HP BiCMOS technology, dissipating less than 60mW and featuring a core area of 0.45mmX200mm.
{"title":"A 25Gb/s Common-Cathode VCSEL Driver","authors":"K. T. Ng, Y. Choi, Keh-Chung Wang","doi":"10.1109/CSICS.2014.6978529","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978529","url":null,"abstract":"A common-cathode VCSEL driver is presented in this paper. Overcoming the large parasitics introduced by the current source at the output node, this VCSEL driver is able to operate at data rate of 25Gb/s. With different rising/falling edge speed, it is able to address the non-linear issues of VCSEL diode. The VCSEL driver was fabricated using IBM8HP BiCMOS technology, dissipating less than 60mW and featuring a core area of 0.45mmX200mm.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130407197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978562
J. Godin, J. Dupuy, F. Jorge, F. Blache, M. Riet, V. Nodjiadjim, P. Berdaguer, B. Duval, A. Konczykowska
This paper reports on very high speed large swing drivers suitable for the generation of high symbol rate spectrally efficient optical transmission signals. To accommodate available data rate, these circuits integrate multiplexing stages. Fabricated using our InP DHBT technology (FT and FMAX >300 GHz, BVCE0 ~5 V), these circuits include NRZ and Multi-Level drivers; they have been used to generate OOK, QPSK and QAM signals in optical transmission experiments at bitrates beyond 100 Gbps.
{"title":"InP DHBT Mux-Drivers for Very High Symbol Rate Optical Communications","authors":"J. Godin, J. Dupuy, F. Jorge, F. Blache, M. Riet, V. Nodjiadjim, P. Berdaguer, B. Duval, A. Konczykowska","doi":"10.1109/CSICS.2014.6978562","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978562","url":null,"abstract":"This paper reports on very high speed large swing drivers suitable for the generation of high symbol rate spectrally efficient optical transmission signals. To accommodate available data rate, these circuits integrate multiplexing stages. Fabricated using our InP DHBT technology (FT and FMAX >300 GHz, BVCE0 ~5 V), these circuits include NRZ and Multi-Level drivers; they have been used to generate OOK, QPSK and QAM signals in optical transmission experiments at bitrates beyond 100 Gbps.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130195747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978559
A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, D. Brown, A. Corrion, H. Moyer, S. Burnham, D. Regan, R. Grabar, C. Mcguire, M. Wetzel, R. Bowen, P. Chen, H. Tai, A. Schmitz, H. Fung, A. Fung, D. Chow
Highly scaled GaN T-gate technology offers devices with high ft/fMAX, and low minimum noise figure while still maintaining high breakdown voltage and high linearity typical for GaN technology. In this paper we report an E-band GaN power amplifier (PA) with output power (Pout) of 1.3 W at power added efficiency (PAE) of 27% and a 65-110 GHz ultra-wideband low noise amplifier (LNA). We also report the first G-band GaN amplifier capable of producing output power density of 296mW/mm at 180 GHz. All these components were realized with a 40 nm T-gate process (ft= 200 GHz, fMAX= 400 GHz, Vbrk > 40V) which can enable the next generation of transmitter and receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability.
{"title":"GaN Technology for E, W and G-Band Applications","authors":"A. Margomenos, A. Kurdoghlian, M. Micovic, K. Shinohara, D. Brown, A. Corrion, H. Moyer, S. Burnham, D. Regan, R. Grabar, C. Mcguire, M. Wetzel, R. Bowen, P. Chen, H. Tai, A. Schmitz, H. Fung, A. Fung, D. Chow","doi":"10.1109/CSICS.2014.6978559","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978559","url":null,"abstract":"Highly scaled GaN T-gate technology offers devices with high ft/fMAX, and low minimum noise figure while still maintaining high breakdown voltage and high linearity typical for GaN technology. In this paper we report an E-band GaN power amplifier (PA) with output power (Pout) of 1.3 W at power added efficiency (PAE) of 27% and a 65-110 GHz ultra-wideband low noise amplifier (LNA). We also report the first G-band GaN amplifier capable of producing output power density of 296mW/mm at 180 GHz. All these components were realized with a 40 nm T-gate process (ft= 200 GHz, fMAX= 400 GHz, Vbrk > 40V) which can enable the next generation of transmitter and receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129215781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-18DOI: 10.1109/CSICS.2014.6978575
D. Agonafer, J. Palko, Y. Won, K. Lopez, Thomas J. Dusseault, Julie Gires, M. Asheghi, J. Santiago, K. Goodson
High power density GaN HEMT technology can increase the capability of defense electronics systems with the reduction of CSWaP. However, thermal limitations have currently limited the inherent capabilities of this technology where transistor-level power densities that exceed 10 kW/cm2 are electrically feasible. This paper introduces the concept of an evaporative microcooling device utilizing some of the current two-phase vapor separation technologies currently being developed for water and dielectric liquids.
{"title":"Progress on Phase Separation Microfluidics","authors":"D. Agonafer, J. Palko, Y. Won, K. Lopez, Thomas J. Dusseault, Julie Gires, M. Asheghi, J. Santiago, K. Goodson","doi":"10.1109/CSICS.2014.6978575","DOIUrl":"https://doi.org/10.1109/CSICS.2014.6978575","url":null,"abstract":"High power density GaN HEMT technology can increase the capability of defense electronics systems with the reduction of CSWaP. However, thermal limitations have currently limited the inherent capabilities of this technology where transistor-level power densities that exceed 10 kW/cm2 are electrically feasible. This paper introduces the concept of an evaporative microcooling device utilizing some of the current two-phase vapor separation technologies currently being developed for water and dielectric liquids.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128942151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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