Pub Date : 2012-11-01DOI: 10.1109/IEMT.2012.6521779
D. Chandran, Ong Chee Teong, M. Razai
Summary form only given. Materials used in the electronic packaging industry are generally categorizes as Direct and Indirect materials. Direct materials would constitute items like substrates, underfill, thermal lids, fluxes, solder materials. On the other hand, indirect materials category would include items such as metal carriers, plastic injection molded trays used to transport the electronic components during across the Assembly & test processes, thermoformed trays , JEDEC trays, carrier tapes & reels used for shipping finished components to the customers. Stencils used for printing fluxes and paste during Chip Attach, Capacitor Attach or Ball Attach processes, packing material such as corrugated boxes, shims, strapping bands, moisture barrier bags, desiccant are also included in this category. This paper will provide a brief introduction to the different types of indirect materials and their use in the manufacturing processes from die preparation all the way to assembly, test, finish and packing. Several key materials & quality characteristics which are critical to ensure these indirect materials functions as required will also be discussed eg. How the selection of an appropriate material to provide robustness through transportation and handling?. This will then lead to discussion on why we need to drive enhancements in the indirect material manufacturing industry. In its essence, the indirect material manufacturing industry in the beginning rarely employed more sophisticated quality management systems. The industry would also consider Pass/Fail type of requirements as an outgoing monitor. This was clearly inadequate in order to meet the process window tightening in Assembly/Test/Finish to meet the required One Generation Ahead drive and also to support increased manufacturing yield targets. Initially met with resistance, the team had to breakthrough barriers in mindset in this industry to move beyond a pass/fail requirements towards more stringent methodologies like Process Capability, Statistical Process Control, material and process characterization which have been already widely used in the direct material world. One of the tools used to breakthrough the mindset was the employment of the Quality Operating System, widely referred to as QOS. It is how quality is ensured at Intel and it was time to proliferate this to the suppliers in the indirect materials industry. QOS provides a framework for ensuring predictable and consistent product quality and covers several areas from supplier selection to development, qualification, process control & issue management right up to supplier continuous quality improvements. Within each of this areas, there are sub-areas such as supplier change control management, supplier material disposition management, QOS health assessments, etc. One critical task that had to be accomplished was to show how all this quality systems enhancements would also benefit the indirect material suppliers from a business resu
{"title":"Success story in driving quality enhancements in the indirect materials used in assembly/test electronic packaging manufacturing","authors":"D. Chandran, Ong Chee Teong, M. Razai","doi":"10.1109/IEMT.2012.6521779","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521779","url":null,"abstract":"Summary form only given. Materials used in the electronic packaging industry are generally categorizes as Direct and Indirect materials. Direct materials would constitute items like substrates, underfill, thermal lids, fluxes, solder materials. On the other hand, indirect materials category would include items such as metal carriers, plastic injection molded trays used to transport the electronic components during across the Assembly & test processes, thermoformed trays , JEDEC trays, carrier tapes & reels used for shipping finished components to the customers. Stencils used for printing fluxes and paste during Chip Attach, Capacitor Attach or Ball Attach processes, packing material such as corrugated boxes, shims, strapping bands, moisture barrier bags, desiccant are also included in this category. This paper will provide a brief introduction to the different types of indirect materials and their use in the manufacturing processes from die preparation all the way to assembly, test, finish and packing. Several key materials & quality characteristics which are critical to ensure these indirect materials functions as required will also be discussed eg. How the selection of an appropriate material to provide robustness through transportation and handling?. This will then lead to discussion on why we need to drive enhancements in the indirect material manufacturing industry. In its essence, the indirect material manufacturing industry in the beginning rarely employed more sophisticated quality management systems. The industry would also consider Pass/Fail type of requirements as an outgoing monitor. This was clearly inadequate in order to meet the process window tightening in Assembly/Test/Finish to meet the required One Generation Ahead drive and also to support increased manufacturing yield targets. Initially met with resistance, the team had to breakthrough barriers in mindset in this industry to move beyond a pass/fail requirements towards more stringent methodologies like Process Capability, Statistical Process Control, material and process characterization which have been already widely used in the direct material world. One of the tools used to breakthrough the mindset was the employment of the Quality Operating System, widely referred to as QOS. It is how quality is ensured at Intel and it was time to proliferate this to the suppliers in the indirect materials industry. QOS provides a framework for ensuring predictable and consistent product quality and covers several areas from supplier selection to development, qualification, process control & issue management right up to supplier continuous quality improvements. Within each of this areas, there are sub-areas such as supplier change control management, supplier material disposition management, QOS health assessments, etc. One critical task that had to be accomplished was to show how all this quality systems enhancements would also benefit the indirect material suppliers from a business resu","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117019067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/IEMT.2012.6521781
Loh Lee Jeng, Loh Kian Hwa, Ng Wen Chang
Degradation of wire bonds in gold and copper ball bonding at high temperature storage normally associated with intermetallic growth defects and/or corrosion defects for the ball bonds (1st bond). Assessments during isothermal aging also mainly focus on intermetallic growth of Au-Al or Cu-Al. In general there is no reliability concern of 2nd bond for gold wire bonding thus far but for 2nd bond of Cu wire bonding there has not been studied sufficiently to date. New failure mechanism (i.e. lifted wedge) that is associated with second bond after high temperature storage had been reported in copper wire bonding. This paper discussed some characteristic of bare Cu and Pd coated Cu wire as bonded and also after high temperature storage. The effect of different wire type and leadframe plating scheme of 2nd bond failures during isothermal aging has been assessed and the mechanism of degradation is discussed.
{"title":"Further characterization of 2nd bond in bare Cu wire and Pd coated Cu wire on various leadframe plating scheme","authors":"Loh Lee Jeng, Loh Kian Hwa, Ng Wen Chang","doi":"10.1109/IEMT.2012.6521781","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521781","url":null,"abstract":"Degradation of wire bonds in gold and copper ball bonding at high temperature storage normally associated with intermetallic growth defects and/or corrosion defects for the ball bonds (1st bond). Assessments during isothermal aging also mainly focus on intermetallic growth of Au-Al or Cu-Al. In general there is no reliability concern of 2nd bond for gold wire bonding thus far but for 2nd bond of Cu wire bonding there has not been studied sufficiently to date. New failure mechanism (i.e. lifted wedge) that is associated with second bond after high temperature storage had been reported in copper wire bonding. This paper discussed some characteristic of bare Cu and Pd coated Cu wire as bonded and also after high temperature storage. The effect of different wire type and leadframe plating scheme of 2nd bond failures during isothermal aging has been assessed and the mechanism of degradation is discussed.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126513315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/IEMT.2012.6521828
Tan Aik Teong, S. A. Zakaria, Lem Tien Heng
With the industry trend moving towards miniaturization and cost reduction, Wire size and Front side metallization (FSM) become thinner and Bond Pad Opening (BPO) getting smaller as well. This paper specifically discusses the challenges and countermeasures being done during the optimization for thin Cu wire (25um) on thin front side metallization (1.6um AlSiCu) with small bond pad opening (65um) where these challenges include NSOP, inconsistent ball size, cratering and metal peeling have been successfully overcame through the capillary design, clamp and heater plate design and WB parameter optimization. Small BPO required special shearing method which is “passivation shearing” also briefly discussed. Reliability stress test (PC+AC 96 hr, PC+TC 1000x and HTS 1500hr) was perform with positive result.
{"title":"The challenges of thin Cu Wire Bond on thin FSM and small BPO","authors":"Tan Aik Teong, S. A. Zakaria, Lem Tien Heng","doi":"10.1109/IEMT.2012.6521828","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521828","url":null,"abstract":"With the industry trend moving towards miniaturization and cost reduction, Wire size and Front side metallization (FSM) become thinner and Bond Pad Opening (BPO) getting smaller as well. This paper specifically discusses the challenges and countermeasures being done during the optimization for thin Cu wire (25um) on thin front side metallization (1.6um AlSiCu) with small bond pad opening (65um) where these challenges include NSOP, inconsistent ball size, cratering and metal peeling have been successfully overcame through the capillary design, clamp and heater plate design and WB parameter optimization. Small BPO required special shearing method which is “passivation shearing” also briefly discussed. Reliability stress test (PC+AC 96 hr, PC+TC 1000x and HTS 1500hr) was perform with positive result.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122608711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/IEMT.2012.6521795
K. Siow
This paper documents the feasibility study of using micrometer-scale Ag paste as a lead-free (Pb-free) die attach material for microelectronic packaging. Currently, there is no viable Pb-free die attach in the market which can pass the reliability testing regimen. Sintered Ag was explored as an interconnect material because of its relatively low processing temperature and robust joint after sintered. This report suggests a possible route for using Ag paste as a Pb-free die attach by dispensing as per current production epoxy die attach. This feasibility study reports the mechanical integrity, electrical and reliability testing of a surface mount power package with four types of dispensable Ag pastes. Separate lots of this surface-mount power package with current die attach materials were also evaluated as controls. This paper is expected to be of interest to companies that are exploring alternative Pb-free die attach materials.
{"title":"Sintered silver (Ag) as lead-free die attach materials","authors":"K. Siow","doi":"10.1109/IEMT.2012.6521795","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521795","url":null,"abstract":"This paper documents the feasibility study of using micrometer-scale Ag paste as a lead-free (Pb-free) die attach material for microelectronic packaging. Currently, there is no viable Pb-free die attach in the market which can pass the reliability testing regimen. Sintered Ag was explored as an interconnect material because of its relatively low processing temperature and robust joint after sintered. This report suggests a possible route for using Ag paste as a Pb-free die attach by dispensing as per current production epoxy die attach. This feasibility study reports the mechanical integrity, electrical and reliability testing of a surface mount power package with four types of dispensable Ag pastes. Separate lots of this surface-mount power package with current die attach materials were also evaluated as controls. This paper is expected to be of interest to companies that are exploring alternative Pb-free die attach materials.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121486458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/IEMT.2012.6521802
O. Kurtz, P. Kuhlkamp, J. Barthelmes, R. Ruther, Din-Ghee Neoh, Sia-Wing Kok
A new MSA based, fluoroborate-free and foam reduced pure tin electrolyte, Niveostan ™*, has been developed to combine excellent technical performance with significant cost saving potentials. It consists of one additive only which can be easily analyzed by UV. The additive includes already an anti-oxidant to suppress the Sn (IV) formation during processing.The electrolyte provides a unique deposit that exhibits, due to smooth morphology and the large crystal grain size, a lower tendency to whisker formation compared to other electrolytes. In a FIB study this morphology as well as the intermetallic phase creation has been investigated on copper base materials. The electrolyte shows a superior high CD performance and an excellent solderability even after severe storage conditions and a high and reliable reflow performance through its "Big-grained Flat Morphology". The electrolyte also allows cost savings with respect to additive consumption, tin and MSA concentration. The tin and MSA concentrations during operation are comparably low in high speed application and allow significant savings in the overall running costs. The additive is very stable as shown in HPLC and Mass spectrometer analysis and mainly consumed by drag-out. The additive includes already an antioxidant to suppress the Sn (IV) formation very efficiently during processing as shown in a benchmark analysis. Furthermore the electrolyte can be used at room temperature even for high speed application due to its excellent HCD performance.
{"title":"Innovative tin electrolyte combining high technical standards with significant cost saving potentials","authors":"O. Kurtz, P. Kuhlkamp, J. Barthelmes, R. Ruther, Din-Ghee Neoh, Sia-Wing Kok","doi":"10.1109/IEMT.2012.6521802","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521802","url":null,"abstract":"A new MSA based, fluoroborate-free and foam reduced pure tin electrolyte, Niveostan ™*, has been developed to combine excellent technical performance with significant cost saving potentials. It consists of one additive only which can be easily analyzed by UV. The additive includes already an anti-oxidant to suppress the Sn (IV) formation during processing.The electrolyte provides a unique deposit that exhibits, due to smooth morphology and the large crystal grain size, a lower tendency to whisker formation compared to other electrolytes. In a FIB study this morphology as well as the intermetallic phase creation has been investigated on copper base materials. The electrolyte shows a superior high CD performance and an excellent solderability even after severe storage conditions and a high and reliable reflow performance through its \"Big-grained Flat Morphology\". The electrolyte also allows cost savings with respect to additive consumption, tin and MSA concentration. The tin and MSA concentrations during operation are comparably low in high speed application and allow significant savings in the overall running costs. The additive is very stable as shown in HPLC and Mass spectrometer analysis and mainly consumed by drag-out. The additive includes already an antioxidant to suppress the Sn (IV) formation very efficiently during processing as shown in a benchmark analysis. Furthermore the electrolyte can be used at room temperature even for high speed application due to its excellent HCD performance.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126468623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/IEMT.2012.6521837
M. Hayakawa, S. Koyama, I. Shohji
The effect of surface modification of Cu and solder foil by citric acid was investigated on the joint strength and the microstructure of the fluxless vacuum bonded Cu joint. In the joint with surface modification, the joint strength increases with increasing bonding temperature and time. The deviation of the joint strength in the joint with surface modification is very lower compared to that of the joint without it. The rugged joint interface forms in the joint without surface modification. On the contrary, the relative smooth joint interface forms in the joint with it. It was clarified that surface modification of Cu and solder foil by citric acid has an effect to stabilize the reliability of the joint.
{"title":"Effect of surface modification by citric acid on fluxless vacuum bonding of Cu with Sn-Cu alloy","authors":"M. Hayakawa, S. Koyama, I. Shohji","doi":"10.1109/IEMT.2012.6521837","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521837","url":null,"abstract":"The effect of surface modification of Cu and solder foil by citric acid was investigated on the joint strength and the microstructure of the fluxless vacuum bonded Cu joint. In the joint with surface modification, the joint strength increases with increasing bonding temperature and time. The deviation of the joint strength in the joint with surface modification is very lower compared to that of the joint without it. The rugged joint interface forms in the joint without surface modification. On the contrary, the relative smooth joint interface forms in the joint with it. It was clarified that surface modification of Cu and solder foil by citric acid has an effect to stabilize the reliability of the joint.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130538804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/IEMT.2012.6521766
N. Jamadon, F. Yusof, M. Shukor, T. Ariga
In this paper, the effect of adding porous Cu to Sn-based solder on the joint strength of the solder alloy was investigated. The porous Cu was arranged in a sandwich-liked layer with Sn-based solder alloys. The soldering process involved different soldering temperature and time. Shear test was also performed to evaluate the joint strength of the solder alloy for both with and without addition of porous Cu. Preliminary results showed that the shear strength increased proportionately with increasing soldering temperature and time. In addition, the shear tests on soldered sample with porous Cu showed an increase in joint strength compared to soldered sample without porous Cu. This result showed that porous Cu has influence on the shear strength of the soldered sample. The follow up investigation was conducted to analyse interfacial reaction that occurred at the solder joints. Details on deformation of intermetallic compound was observed by using optical microscopy (OM). Photo images showed that porous Cu reacted with molten solder paste and were diffused at the boundary of the solder alloys.
{"title":"Effect of adding porous Cu on the microstructure and mechanical properties of Pb-free solder joint","authors":"N. Jamadon, F. Yusof, M. Shukor, T. Ariga","doi":"10.1109/IEMT.2012.6521766","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521766","url":null,"abstract":"In this paper, the effect of adding porous Cu to Sn-based solder on the joint strength of the solder alloy was investigated. The porous Cu was arranged in a sandwich-liked layer with Sn-based solder alloys. The soldering process involved different soldering temperature and time. Shear test was also performed to evaluate the joint strength of the solder alloy for both with and without addition of porous Cu. Preliminary results showed that the shear strength increased proportionately with increasing soldering temperature and time. In addition, the shear tests on soldered sample with porous Cu showed an increase in joint strength compared to soldered sample without porous Cu. This result showed that porous Cu has influence on the shear strength of the soldered sample. The follow up investigation was conducted to analyse interfacial reaction that occurred at the solder joints. Details on deformation of intermetallic compound was observed by using optical microscopy (OM). Photo images showed that porous Cu reacted with molten solder paste and were diffused at the boundary of the solder alloys.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124601790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/IEMT.2012.6521743
V. R. Manikam, K. A. Razak, K. Cheong
The effects of sintering on Ag80-Al20 nanopaste for use as a high temperature die attach material was studied. The sintering profile was fixed at 380°C, while the ramp rates and dwell times were varied at 5 to 10°C/min and 10 to 50 mins, respectively. It was shown statistically that dwell time had a more profound effect on the physical outcome of the sintered material. The post-sintered Ag80-Al20 die attach material was analyzed for its electrical, thermal and mechanical properties. It demonstrated an electrical and thermal conductivity of 1.01 × 10-5 (ohm-cm)-1 and 123 W/m-K, respectively. Its melting point was determined at 518 ± 1°C, with an operational temperature of approximately 400°C. The low modulus of elasticity, E, at 9.8 GPa, matched the drop in values of hardness and stiffness as well, due to the formation of pores within the material. This altered the attributes of the die attach material. Its low CTE value at 7.74 × 10-6/°C is close to SiC which make it a suitable candidate for high temperature die attach applications.
{"title":"Sintering of Ag80-Al20 nanoalloy for high temperature die attach applications on silicon carbide-based power devices: The effects of ramp rate and dwell time","authors":"V. R. Manikam, K. A. Razak, K. Cheong","doi":"10.1109/IEMT.2012.6521743","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521743","url":null,"abstract":"The effects of sintering on Ag<sub>80</sub>-Al<sub>20</sub> nanopaste for use as a high temperature die attach material was studied. The sintering profile was fixed at 380°C, while the ramp rates and dwell times were varied at 5 to 10°C/min and 10 to 50 mins, respectively. It was shown statistically that dwell time had a more profound effect on the physical outcome of the sintered material. The post-sintered Ag<sub>80</sub>-Al<sub>20</sub> die attach material was analyzed for its electrical, thermal and mechanical properties. It demonstrated an electrical and thermal conductivity of 1.01 × 10<sup>-5</sup> (ohm-cm)<sup>-1</sup> and 123 W/m-K, respectively. Its melting point was determined at 518 ± 1°C, with an operational temperature of approximately 400°C. The low modulus of elasticity, E, at 9.8 GPa, matched the drop in values of hardness and stiffness as well, due to the formation of pores within the material. This altered the attributes of the die attach material. Its low CTE value at 7.74 × 10<sup>-6</sup>/°C is close to SiC which make it a suitable candidate for high temperature die attach applications.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116487970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/IEMT.2012.6521827
Y. Civale, A. Redolfi, P. Jaenen, M. Kostermans, E. Van Besien, S. Mertens, T. Witters, N. Jourdan, S. Armini, Z. El-Mekki, K. Vandersmissen, H. Philipsen, P. Verdonck, N. Heylen, P. Nolmans, Yunlong Li, K. Croes, G. Beyer, B. Swinnen, E. Beyne
Higher performance, higher operation speed and volume shrinkage require high 3D TSV interconnect densities. This work focuses on a via-middle 3D process flow, which implies processing of the 3D-TSV after the front-end-of-line (FEOL) and before the back-end-of-line (BEOL) interconnect process. A description of the imec 300 mm TSV platform is given, and challenges towards a reliable process integration of high density high aspect-ratio 3D interconnections are also discussed in details.
{"title":"Through-silicon via technology for three-dimensional integrated circuit manufacturing","authors":"Y. Civale, A. Redolfi, P. Jaenen, M. Kostermans, E. Van Besien, S. Mertens, T. Witters, N. Jourdan, S. Armini, Z. El-Mekki, K. Vandersmissen, H. Philipsen, P. Verdonck, N. Heylen, P. Nolmans, Yunlong Li, K. Croes, G. Beyer, B. Swinnen, E. Beyne","doi":"10.1109/IEMT.2012.6521827","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521827","url":null,"abstract":"Higher performance, higher operation speed and volume shrinkage require high 3D TSV interconnect densities. This work focuses on a via-middle 3D process flow, which implies processing of the 3D-TSV after the front-end-of-line (FEOL) and before the back-end-of-line (BEOL) interconnect process. A description of the imec 300 mm TSV platform is given, and challenges towards a reliable process integration of high density high aspect-ratio 3D interconnections are also discussed in details.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132730764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-11-01DOI: 10.1109/IEMT.2012.6521787
Y. F. Lee, C. Kum
Proximity sensors, which are designed to detect the presence of nearby objects without any physical contact. Proximity sensor basically employ an Infra Red LED transceiver and Light receiver to achieve proximity detection purpose. Existing proximity sensors comprise of 1 Infra red LED chip and 1 light receiver chip. This 2 separate chips setup has disadvantages of occupying more space and high assembly cost which does not meet the requirement for future application in smart phone and tablet PC Many current processes produce optical proximity sensors with poor optical isolation and unfavorable noise (e.g., light leakage) between the light emitter and light detector dies, among other poor performance characteristics. Furthermore, current molding processes utilize slow and inefficient human-operated manual casting methods that produce low and inconsistent manufacturing yields. This paper will present an innovative method of combining Infra red LED chip and receiver chip into 1 package with enhanced infra red shielding capability that keeping cross talk to extremely low level. The paper also elaborate importance of using FEA method in material selection and series of evaluation to accomplish development of combine molding package (patent filed by Carsem).
{"title":"Combined molding package (proximity sensor)","authors":"Y. F. Lee, C. Kum","doi":"10.1109/IEMT.2012.6521787","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521787","url":null,"abstract":"Proximity sensors, which are designed to detect the presence of nearby objects without any physical contact. Proximity sensor basically employ an Infra Red LED transceiver and Light receiver to achieve proximity detection purpose. Existing proximity sensors comprise of 1 Infra red LED chip and 1 light receiver chip. This 2 separate chips setup has disadvantages of occupying more space and high assembly cost which does not meet the requirement for future application in smart phone and tablet PC Many current processes produce optical proximity sensors with poor optical isolation and unfavorable noise (e.g., light leakage) between the light emitter and light detector dies, among other poor performance characteristics. Furthermore, current molding processes utilize slow and inefficient human-operated manual casting methods that produce low and inconsistent manufacturing yields. This paper will present an innovative method of combining Infra red LED chip and receiver chip into 1 package with enhanced infra red shielding capability that keeping cross talk to extremely low level. The paper also elaborate importance of using FEA method in material selection and series of evaluation to accomplish development of combine molding package (patent filed by Carsem).","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133680938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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